TRANSISTOR W7 Search Results

RIL3N

Abstract: transistor 1107 transistor tt 2222 W045 TT 2222 BLY91C j0718 RF POWER TRANSISTOR NPN vhf transistor L6
Contextual Info: b SE 711002b D DDb3bll Sbl • PHIN BLY91C PHILIPS INTERNATIONAL V.H.F. POWER TRANSISTOR N-P-N silicon planar epitaxial transistor intended for use in class-A, B and C operated h.f. and v.h.f. transmitters with a nominal supply voltage of 28 V. The transistor is resistance stabilized and is guaran­

Contextual Info: N AMER PHILIPS/DISCRETE ^1=53^31 DD3T433 E7D BLW83 fc.RE D IAPX l H.F./V.H.F. POWER TRANSISTOR N-P-N silicon planar epitaxial transistor fo r use in transmitting am plifiers operating in the h.f. and v.h.f. bands, w ith a nominal supply voltage o f 28 V . The transistor is specified fo r s.s.b. applications as linear

Contextual Info: N AUER PHILIPS/DISCRETE b'lE D • bbSS1^ ! DQETBbb 77E « A P X BLW76 H.F./V.H.F. POWER TRANSISTOR N-P-N silicon planar epitaxial transistor intended fo r use in class-AB or class-B operated high power transmitters in the h.f. and v.h.f. bands. The transistor presents excellent performance as a linear am­

Contextual Info: N AMER PHILIPS/DISCRETE b'lE D b b S B ' m DDETBflD DM2 * A P X BLW77 J V . H.F./V.H.F. POWER TRANSISTOR N-P-N silicon planar epitaxial transistor intended for use in class-AB or class-B operated high power transmitters in the h.f. and v.h.f. bands. The transistor presents excellent performance as a linear am­

RN4988FS

Contextual Info: RN4988FS TOSHIBA Transistor Silicon NPN•PNP Epitaxial Type PCT process (Bias Resistor built-in Transistor) RN4988FS Switching, Inverter Circuit, Interface Circuit and Driver Circuit Applications Unit: mm 1.0±0.05 Equivalent Circuit and Bias Resistor Values

RN4988FS

Contextual Info: RN4988FS TOSHIBA Transistor Silicon NPN•PNP Epitaxial Type PCT process (Bias Resistor built-in Transistor) RN4988FS Switching, Inverter Circuit, Interface Circuit and Driver Circuit Applications Unit: mm 1.0±0.05 0.8±0.05 0.1±0.05 Q2 C C R1 fS6 R1 R2

SMD TRANSISTOR MARKING w7

Abstract: PBHV8115T PBHV9115T MARKING CODE SMD IC
Contextual Info: PBHV9115T 150 V, 1 A PNP high-voltage low VCEsat BISS transistor Rev. 02 — 9 January 2009 Product data sheet 1. Product profile 1.1 General description PNP high-voltage low VCEsat Breakthrough In Small Signal (BISS) transistor in a SOT23 (TO-236AB) small Surface-Mounted Device (SMD) plastic package.

SMD TRANSISTOR MARKING w7

Contextual Info: PBHV9115T 150 V, 1 A PNP high-voltage low VCEsat BISS transistor Rev. 02 — 9 January 2009 Product data sheet 1. Product profile 1.1 General description PNP high-voltage low VCEsat Breakthrough In Small Signal (BISS) transistor in a SOT23 (TO-236AB) small Surface-Mounted Device (SMD) plastic package.

Contextual Info: N AMER PHILIPS/DISCRETE b^E bbSS^l D 003^3^4 b37 BLW78 H.F./V.H.F. POWER TRANSISTOR N-P-N silicon planar epitaxial transistor intended fo r use in class-A, AB or B operated mobile, industrial and m ilitary transmitters in the h.f. and v.h.f. bands. It is resistance stabilized and is guaranteed to

transistor w7

Abstract: PJ99
Contextual Info: AL L E GRO MI C ROS Y S TE MS I NC ^3 D • 0 5 D4 3 3 Ô 00D3775 S ■ ALGR T -9 1 -0 1 PROCESS PJ99 Process PJ99 P-Channel Junction Field-Effect Transistor Process PJ99 is a P-channel junction field-effect transistor designed as a complement to the NJ99

Contextual Info: ^53=131 0025510 'i El H A P X BSP121 L7E » N AMER PH IL IP S/ DI SC R ET E 7 V. N-CHANNEL ENHANCEMENT MODE VERTICAL D-MOS TRANSISTOR N-channel enhancement mode vertical D-MOS transistor in a miniature SOT223 envelope and designed fo r use as a line current interrupter in telephone sets and fo r application in relay, high-speed and

W7NA90

Abstract: STW7NA90 welding circuit diagram W7NA
Contextual Info: STW7NA90 N - CHANNEL ENHANCEMENT MODE FAST POWER MOS TRANSISTOR TYPE ST W7NA90 • ■ ■ ■ ■ ■ ■ V DSS R DS on ID 900 V < 1.3 Ω 7A TYPICAL RDS(on) = 1.05 Ω ± 30V GATE TO SOURCE VOLTAGE RANTING 100% AVALANCHE TESTED REPETITIVE AVALANCHE DATA AT 100oC

W7NA80

Abstract: h7na80fi h7na80 TRANSISTOR FS 2025 STH7NA80FI STW7NA80 o247
Contextual Info: STW7NA80 STH7NA80FI N - CHANNEL ENHANCEMENT MODE FAST POWER MOS TRANSISTOR PRELIMINARY DATA TYPE ST W7NA80 ST H7NA80FI • ■ ■ ■ ■ ■ ■ V DSS R DS on ID 800 V 800 V < 1.9 Ω < 1.9 Ω 6.5 A 4 A TYPICAL RDS(on) = 1.68 Ω ± 30V GATE TO SOURCE VOLTAGE RATING

Contextual Info: J.E.I±E.U 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. TELEPHONE: 973 376-2922 (212)227-6005 FAX: (973) 376-8960 MTM12N10 *MTP12N10E Designer's Data Sheet Power Field Effect Transistor N-Channel Enhancement-Mode Silicon Gate TMOS POWER FETs 12 AMPERES

AN2846

Abstract: schematic inductive proximity sensor PZT2N2907A MELF pad layout CWS500C DVR8 4 channel dvr schematic diagram diode 1n6 diode 1n6 39v ACPL-K73L
Contextual Info: AN2846 Application note SCLT3-8 - guidelines for use in industrial automation applications Introduction The serial current limited termination device SCLT3-8 provides 8 inputs and supports the data transfer of the input states through a limited opto-transistor count thanks to the digital

Contextual Info: DATA SHEET MOS INTEGRATED CIRCUIT 1M-BIT CMOS SYNCHRONOUS FAST SRAM 32K-WORD BY 36-BIT PIPELINED OPERATION Description The /¿PD431636L is a 32,768-word by 36-bit synchronous static RAM fabricated with advanced CMOS technology using N-channel four-transistor memory cell.

c38 transistor

Abstract: PHILIPS 4330 030 36300 transistor tt 2222 c39 transistor L33 TRANSISTOR TT 2222 npn 4330 030 36 ferroxcube FERROXCUBE 4330 b3171 transistor c37
Contextual Info: t m 7110821, D0b31t,4 m BIPHIN Philips Semiconductors_ _ . . bSE T> PHILIPS INTERNATIONAL UHF push-pull power transistor FEATURES • Double input and output matching for easy matching and high gain QUICK REFERENCE DATA RF performance at Th = 25 °C in a common emitter test circuit.

TC51832FL10

Abstract: TC51832 TC51832FL-10 TC51832PL-10 256IC 832P
Contextual Info: 832P/S 832 P/S 832P/S 32,768 WORD x 3 BIT CMOS PSEUDO STATIC RAM IDESCRIPTION] The TC51832 Family is a 256IC bit high-speed CMOS Pseudo-Static RAM organized as 32,768 words by 8 bits. The TC51832 Family utilizes one transistor dynamic memory cell array with

W7NA80

Abstract: 7NA80 stw7na80 STH7NA80FI P025P
Contextual Info: STW7NA80 STH7NA80FI  N - CHANNEL ENHANCEMENT MODE FAST POWER MOS TRANSISTOR TYPE STW 7NA80 STH7NA80F I • ■ ■ ■ ■ ■ ■ V DSS R DS on ID 800 V 800 V < 1.9 Ω < 1.9 Ω 6.5 A 4 A TYPICAL RDS(on) = 1.68 Ω ± 30V GATE TO SOURCE VOLTAGE RATING

Contextual Info: SGS-THOMSON ¡UÈTO « ¿ 5 7 STP5NA80 STP5NA80FI N - CHANNEL ENHANCEMENT MODE FAST POWER MOS TRANSISTOR TYP E V STP5NA80 STP5NA80FI dss 800 V 800 V R DS on Id < 2.4 a < 2.4 a 4.7 A 2.8 A • TYPICAL RDS(on) = 1 8 Q. . ± 30V GATE TO SOURCE VOLTAGE RATING

3fc relay

Abstract: diode 1.5 ke 36 ca
Contextual Info: MOTOROLA SC XSTRS/R I F 1 4 E D H fc,3fc,72S4 0 0 0 ^ = 1 7 MOTOROLA □ I •l SEMICONDUCTOR TECHNICAL DATA IRF710 N-CHANNEL ENHANCEM ENT-M O DE SILICON GATE T M O S POWER FIELD EFFECT TRANSISTOR Part Number Vd s s IRF71Q 400 V rosion 3.6 n Th is T M O S Power F E T is designed for high voltage, high speed

Contextual Info: S G S -T H O M S O N ¡m e ra « ¿ 5 7 S T P 3 N 100 S T P 3 N 1 0 0 FI N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR TYP E V S T P 3 N 1 00 S T P 3 N 1 00FI . • . . . . R DS on dss 1000 V 1000 V Id < 5 0 < 5 0 3.5 A 2 A AVALANCHE RUGGED TECHNOLOGY

aif4m

Abstract: marking h06 5946A aif4m k JT MARKING 5P J TRANSISTOR MARKING
Contextual Info: 7 s— S • — h- Com pound Transistor FIMI F 4 M > 1-^ t£ÈfcF*9Ü c P N P x n ÿHBS # e : mm a 7 o ^ M x f â i / t £ | * | j l L ( R x = 22 k û , t > 1 ~a '£ 2 .8 ± 0.2 1.5 R 2 = 22 kQ) o.65-8:i5 iC J. o FA1F4M t =? > 7° 'J / > U X " i t ffl T" £ i f c

Contextual Info: IMH3 N ~7 > V ^ $ / I ransistors IMH3 ^ V U - 7 7 K$-i-^Kr/W7 -f > /< — 3? K 7 < /V ln v e rte r Driver Isolated Mini-Mold Device • sir>JV;Vxji-r • W fJ'rjsIS I/D im en sion s U n it: mm 1) SMT (SC-59) ills ] — f*l» lC 2 C0 h 7> 2 #“'A o T L'-50