TRANSISTOR W 59 Search Results

Contextual Info: CMPT591E ENHANCED SPECIFICATION SURFACE MOUNT PNP SILICON TRANSISTOR w w w. c e n t r a l s e m i . c o m DESCRIPTION: The CENTRAL SEMICONDUCTOR CMPT591E type is an Enhanced version of the industry standard 591 PNP silicon transistor. This device is manufactured by the

igbt module bsm 200

Abstract: GB60 igbt module bsm 300 eupec igbt BSM 100 gb
Contextual Info: Technische Information / Technical Information IGBT-Module IGBT-Modules BSM 200 GB 60 DLC Thermische Eigenschaften / Thermal properties min. typ. max. - - 0,17 K/W - - 0,29 K/W Innerer Wärmewiderstand thermal resistance, junction to case Transistor / transistor, DC

CMPT491E

Abstract: CMPT591E
Contextual Info: CMPT591E ENHANCED SPECIFICATION SURFACE MOUNT PNP SILICON TRANSISTOR SOT-23 CASE w w w. c e n t r a l s e m i . c o m DESCRIPTION: The CENTRAL SEMICONDUCTOR CMPT591E type is an Enhanced version of the industry standard 591 PNP silicon transistor. This device is manufactured by the

transistor b722

Abstract: b863 tc 144e Transistor b861 B861 equivalent transistor TT 3034 A771 TRANSISTOR B861 transistor DTC103 transistor TT 3034
Contextual Info: DTA/DTB/DTC/DTD DIGITAL TRANSISTOR APPLICATION: • EQUIVALENT CIRCUITS: Inverter, Driver & Interface Circuits FEATURES; w w w . Datasheet. i n • Replaces up to three parts 1 transistor & 2 resis­ tors with one part • Available in a variety of surface mount or leaded

RCA H 541

Abstract: 2T312 2N2654 AS218 transistor gex 74a diode germanium 1n283 K3004 TFK diode ac132 TI-483
Contextual Info: $ 1.50 Cat. No. SSH-6 /U*A TRANSISTOR SUBSTITUTION HANDBOOK by The Howard W. Sams Engineering Staff HOWARD W. SAMS & CO., INC. THE BOBBS-MERRILL COMPANY, INC. Indianapolis • New York SIXTH EDITION FIRST PRINTING — FEBRUARY, 1965 TRANSISTOR SUBSTITUTION HANDBOOK

BLW84

Abstract: transistor tt 2222 C 829 transistor TT 2222 npn TT 2222 SOT123 C 828 Transistor transistor L6
Contextual Info: N AMER PHILIPS/DISCRETE bTE D • bbS3S31 002^441 Sfl3 IAPX BLW84 V.H.F. POWER TRANSISTOR N-P-N silicon planar epitaxial transistor intended fo r use in class-A, B and C operated v.h.f. transmitters w ith a nominal supply voltage o f 28 V . The transistor is resistance stabilized and is guaranteed to w ith­

J307 FET

Abstract: AGR19180EF JESD22-A114 agere c8
Contextual Info: Preliminary Data Sheet March 2004 AGR19180EF 180 W, 1930 MHz—1990 MHz, PCS LDMOS RF Power Transistor Introduction The AGR19180EF is a 180 W, 28 V N-channel laterally diffused metal oxide semiconductor LDMOS RF power field effect transistor (FET) suitable for

J307 FET

Abstract: AGR19180EF JESD22-A114 c38 transistor j526 j451 J386
Contextual Info: Preliminary Data Sheet April 2004 AGR19180EF 180 W, 1930 MHz—1990 MHz, PCS LDMOS RF Power Transistor Introduction The AGR19180EF is a 180 W, 28 V N-channel laterally diffused metal oxide semiconductor LDMOS RF power field effect transistor (FET) suitable for

Contextual Info: BLF642 Broadband power LDMOS transistor Rev. 2 — 22 July 2011 Product data sheet 1. Product profile 1.1 General description A 35 W LDMOS RF power transistor for broadcast transmitter and industrial applications. The transistor is suitable for the frequency range HF to 1400 MHz. The excellent

C570X7R1H106KT000N

Abstract: 771-BLF642112 SOT467 Technical Specifications of DVB-T2 Transmitter DVB-T2 blf642,112 blf642 C570x
Contextual Info: BLF642 Broadband power LDMOS transistor Rev. 2 — 22 July 2011 Product data sheet 1. Product profile 1.1 General description A 35 W LDMOS RF power transistor for broadcast transmitter and industrial applications. The transistor is suitable for the frequency range HF to 1400 MHz. The excellent

GT45F122

Abstract: gt30g122 gt30f122 gt45f123 GT45f122 Series gt35j321 GT45G122 gt60n323 *45F122 GT45F124
Contextual Info: 2008-3 PRODUCT GUIDE Discrete IGBTs s e m i c o n d u c t o r h t tp://w w w.semico n .to shib a .co.jp /en g 1 Features and Structure IGBT: Insulated Gate Bipolar Transistor IGBTs combine the MOSFET advantage of high input impedance with the bipolar transistor

AT415

Contextual Info: W h pt H E W L E T T mL/im P A C K A R D General Purpose, Low Noise NPN Silicon Bipolar Transistor Technical Data AT-41511, A T-41533 F eatu res D escrip tion • General Purpose NPN Bipolar Transistor • 900 MHz Performance: AT-41511: 1 dB NF, 15.5 dB Ga

transistor smd 1FT

Abstract: AT12L
Contextual Info: W h a lH E W L E T T $ mLKM PACKARD Hermetically Sealed, Transistor Output Optocouplers for Analog and Digital Applications 4N55* 5962-87679 HCPL-553X HCPL-653X Technical Data HCPL-655X 5962-90854 HCPL-550X ‘ See matrix for available extensions. Features

transistor c36

Abstract: wacom wacom connector transistor j8 f 9234 transistor B 325 PH3134
Contextual Info: =5= ,-= E -= EF an AMP company * ,- .-z = Radar Pulsed Power Transistor, 11 W, lps Pulse, 10% Duty PH3134-11s 3.1 - 3.4 GHz Features NPN Silicon Microwave Power Transistor Common Base Configuration Broadband Class C Operation High Efficiency Interdigitated Geometry

Contextual Info: BLF6G15L-40BRN Power LDMOS transistor Rev. 2 — 12 November 2010 Product data sheet 1. Product profile 1.1 General description 40 W LDMOS power transistor for base station applications at frequencies from 1450 MHz to 1550 MHz. Table 1. Typical performance

Contextual Info: BLF8G20LS-260A Power LDMOS transistor Rev. 2 — 9 November 2012 Preliminary data sheet 1. Product profile 1.1 General description 260 W LDMOS packaged asymmetrical Doherty power transistor for base station applications at frequencies from 1805 MHz to 1880 MHz.

3590S-491-103

Abstract: 23n50 13N50
Contextual Info: BLF6G15L-40BRN Power LDMOS transistor Rev. 1 — 14 September 2010 Preliminary data sheet 1. Product profile 1.1 General description 40 W LDMOS power transistor for base station applications at frequencies from 1450 MHz to 1550 MHz. Table 1. Typical performance

BLF6G15L-40BRN

Abstract: 800B RO4350
Contextual Info: BLF6G15L-40BRN Power LDMOS transistor Rev. 2 — 12 November 2010 Product data sheet 1. Product profile 1.1 General description 40 W LDMOS power transistor for base station applications at frequencies from 1450 MHz to 1550 MHz. Table 1. Typical performance

BLF8G20LS-260A

Abstract: ATC800B blf8g20 X3C19
Contextual Info: BLF8G20LS-260A Power LDMOS transistor Rev. 1 — 13 September 2012 Objective data sheet 1. Product profile 1.1 General description 260 W LDMOS packaged asymmetrical Doherty power transistor for base station applications at frequencies from 1805 MHz to 1880 MHz.

transistor NEC B 617

Abstract: nec. 5.5 473
Contextual Info: DATA SHEET NEC SILICON TRANSISTOR 2SC5007 NPN SILICON EPITAXIAL TRANSISTOR 3 PINS ULTRA SUPER MINI MOLD DESCRIPTION The 2SC5007 is an NPN epitaxial silicon transistor designed for use in low noise and small signal am plifiers from VHF band to UHF band. Low noise figure, high gain, and high current capability achieve a very w ide dynam ic range

2N336

Abstract: ScansUX7
Contextual Info: TYPE 2N336 N-P-N GROWN-JUNCTION SILICON TRANSISTOR BULLETIN NO. DL-S 591 03 9, MARCH 1959 Beta From 76 to 333 Specifically designed for high gain at high temperatures mechanical data Welded W elded case case with w ith gglass-to-metal lass-to -m etal hermetic

IRL19

Contextual Info: T1L2003028-SP 30 W, 28V, 500 MHz—2 GHz, PowerbandTM LDMOS RF Power Transistor Introduction The T1L2003028-SP is a POWERBANDTM discrete LDMOS, enhancement mode RF Power transistor designed to operate from 500MHz to 2GHz in wide-band circuits. The device has an

IC SEM 2105

Abstract: common emitter transistors
Contextual Info: What H E W L E T T * miltm PACKARD Low Current, High Performance NPN Silicon Bipolar Transistor Technical Data AT-30511 AT-30533 Features Description • High Performance Bipolar Transistor Optimized for Low Current, Low Voltage Operation • 900 MHz Performance:

C945C

Contextual Info: What H E W L E T T * mLliM PACKARD Low Current, High Performance NPN Silicon Bipolar Transistor Technical Data AT-32063 Features Description • High Performance Bipolar Transistor Optimized for Low Current, Low Voltage Operation The AT-32063 contains two high