TRANSISTOR W 59 Search Results
TRANSISTOR W 59 Result Highlights (5)
Part | ECAD Model | Manufacturer | Description | Download | Buy |
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BLA1011-2 |
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Avionics LDMOS transistor |
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RX1214B300YI |
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RX1214B300Y - Microwave Power Transistor |
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CA3127MZ |
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CA3127 - Transistor Array |
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RX1214B130YI |
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NPN microwave power transistor |
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MX0912B251Y |
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NPN microwave power transistor |
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TRANSISTOR W 59 Datasheets Context Search
Catalog Datasheet | Type | Document Tags | |
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Contextual Info: CMPT591E ENHANCED SPECIFICATION SURFACE MOUNT PNP SILICON TRANSISTOR w w w. c e n t r a l s e m i . c o m DESCRIPTION: The CENTRAL SEMICONDUCTOR CMPT591E type is an Enhanced version of the industry standard 591 PNP silicon transistor. This device is manufactured by the |
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CMPT591E CMPT591E OT-23 CMPT491E 500mA 100MHz 27-January | |
igbt module bsm 200
Abstract: GB60 igbt module bsm 300 eupec igbt BSM 100 gb
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CMPT491E
Abstract: CMPT591E
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CMPT591E OT-23 CMPT591E CMPT491E 500mA 100MHz 27-January CMPT491E | |
transistor b722
Abstract: b863 tc 144e Transistor b861 B861 equivalent transistor TT 3034 A771 TRANSISTOR B861 transistor DTC103 transistor TT 3034
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RCA H 541
Abstract: 2T312 2N2654 AS218 transistor gex 74a diode germanium 1n283 K3004 TFK diode ac132 TI-483
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BLW84
Abstract: transistor tt 2222 C 829 transistor TT 2222 npn TT 2222 SOT123 C 828 Transistor transistor L6
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bbS3S31 BLW84 59-j54 OT-123. 7Z77529 7Z77S30 BLW84 transistor tt 2222 C 829 transistor TT 2222 npn TT 2222 SOT123 C 828 Transistor transistor L6 | |
J307 FET
Abstract: AGR19180EF JESD22-A114 agere c8
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AGR19180EF Hz--1990 AGR19180EF DS04-080RFPP DS02-377RFPP) J307 FET JESD22-A114 agere c8 | |
J307 FET
Abstract: AGR19180EF JESD22-A114 c38 transistor j526 j451 J386
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AGR19180EF Hz--1990 AGR19180EF DS04-162RFPP DS04-080RFPP) J307 FET JESD22-A114 c38 transistor j526 j451 J386 | |
Contextual Info: BLF642 Broadband power LDMOS transistor Rev. 2 — 22 July 2011 Product data sheet 1. Product profile 1.1 General description A 35 W LDMOS RF power transistor for broadcast transmitter and industrial applications. The transistor is suitable for the frequency range HF to 1400 MHz. The excellent |
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BLF642 | |
C570X7R1H106KT000N
Abstract: 771-BLF642112 SOT467 Technical Specifications of DVB-T2 Transmitter DVB-T2 blf642,112 blf642 C570x
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BLF642 771-BLF642112 BLF642 C570X7R1H106KT000N SOT467 Technical Specifications of DVB-T2 Transmitter DVB-T2 blf642,112 C570x | |
GT45F122
Abstract: gt30g122 gt30f122 gt45f123 GT45f122 Series gt35j321 GT45G122 gt60n323 *45F122 GT45F124
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BCE0010D S-167 BCE0010E GT45F122 gt30g122 gt30f122 gt45f123 GT45f122 Series gt35j321 GT45G122 gt60n323 *45F122 GT45F124 | |
AT415Contextual Info: W h pt H E W L E T T mL/im P A C K A R D General Purpose, Low Noise NPN Silicon Bipolar Transistor Technical Data AT-41511, A T-41533 F eatu res D escrip tion • General Purpose NPN Bipolar Transistor • 900 MHz Performance: AT-41511: 1 dB NF, 15.5 dB Ga |
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AT-41511, T-41533 AT-41511: AT-41533: OT-23 OT-143 AT-41511 AT-41533 OT-23, AT415 | |
transistor smd 1FT
Abstract: AT12L
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HCPL-553X HCPL-653X HCPL-655X HCPL-550X MIL-PRF-38534 QML-38534, 6N135D MIL-PRF-38534. 5964-3910E transistor smd 1FT AT12L | |
transistor c36
Abstract: wacom wacom connector transistor j8 f 9234 transistor B 325 PH3134
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PH3134-11s MJLLIMET1344) transistor c36 wacom wacom connector transistor j8 f 9234 transistor B 325 PH3134 | |
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Contextual Info: BLF6G15L-40BRN Power LDMOS transistor Rev. 2 — 12 November 2010 Product data sheet 1. Product profile 1.1 General description 40 W LDMOS power transistor for base station applications at frequencies from 1450 MHz to 1550 MHz. Table 1. Typical performance |
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BLF6G15L-40BRN | |
Contextual Info: BLF8G20LS-260A Power LDMOS transistor Rev. 2 — 9 November 2012 Preliminary data sheet 1. Product profile 1.1 General description 260 W LDMOS packaged asymmetrical Doherty power transistor for base station applications at frequencies from 1805 MHz to 1880 MHz. |
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BLF8G20LS-260A | |
3590S-491-103
Abstract: 23n50 13N50
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BLF6G15L-40BRN 3590S-491-103 23n50 13N50 | |
BLF6G15L-40BRN
Abstract: 800B RO4350
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BLF6G15L-40BRN BLF6G15L-40BRN 800B RO4350 | |
BLF8G20LS-260A
Abstract: ATC800B blf8g20 X3C19
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BLF8G20LS-260A BLF8G20LS-260A ATC800B blf8g20 X3C19 | |
transistor NEC B 617
Abstract: nec. 5.5 473
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2SC5007 2SC5007 transistor NEC B 617 nec. 5.5 473 | |
2N336
Abstract: ScansUX7
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2N336 ScansUX7 | |
IRL19Contextual Info: T1L2003028-SP 30 W, 28V, 500 MHz—2 GHz, PowerbandTM LDMOS RF Power Transistor Introduction The T1L2003028-SP is a POWERBANDTM discrete LDMOS, enhancement mode RF Power transistor designed to operate from 500MHz to 2GHz in wide-band circuits. The device has an |
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T1L2003028-SP 500MHz 30watts 45Watts 500MHz-2GHz IRL19 | |
IC SEM 2105
Abstract: common emitter transistors
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AT-30511 AT-30533 AT-30533 OT-23 OT-143 sAT-30511 OT-23, IC SEM 2105 common emitter transistors | |
C945CContextual Info: What H E W L E T T * mLliM PACKARD Low Current, High Performance NPN Silicon Bipolar Transistor Technical Data AT-32063 Features Description • High Performance Bipolar Transistor Optimized for Low Current, Low Voltage Operation The AT-32063 contains two high |
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AT-32063 OT-363 SC-70) AT-32063 OT-363 C945C |