TRANSISTOR UW Search Results

D1486

Abstract: 2SC4342
Contextual Info: DATA SHEET SILICON POWER TRANSISTOR 2SC4342 PNP SILICON EPITAXIAL TRANSISTOR DARLINGTON CONNECTION FOR HIGH-SPEED SWITCHING ORDERING INFORMATION The 2SC4342 is a high-speed Darlington power transistor. This transistor is ideal for high-precision control such as PWM

D1485

Abstract: 2SA1720
Contextual Info: DATA SHEET DARLINGTON POWER TRANSISTOR 2SA1720 PNP SILICON EPITAXIAL TRANSISTOR DARLINGTON CONNECTION FOR HIGH-SPEED SWITCHING ORDERING INFORMATION The 2SA1720 is a high-speed Darlington power transistor. This transistor is ideal for high-precision control such as PWM

D1486

Contextual Info: DATA SHEET SILICON POWER TRANSISTOR 2SD2162 NPN SILICON EPITAXIAL TRANSISTOR DARLINGTON CONNECTION FOR LOW-FREQUENCY POWER AMPLIFIERS AND LOW-SPEED SWITCHING The 2SD2162 is a Darlington power transistor that can directly drive from the IC output. This transistor is ideal for motor drivers and

2SA1843

Contextual Info: DATA SHEET SILICON POWER TRANSISTOR 2SA1843 PNP SILICON EPITAXIAL POWER TRANSISTOR FOR HIGH-SPEED SWITCHING The 2SA1843 is a power transistor developed for high-speed switching and features a high hFE at low VCE sat . This transistor is ideal for use as a driver in DC/DC converters and actuators.

BST122

Contextual Info: • b b s s 'm 0023^0 uw N AMER PHILIPS/DISCRETE APX b7E D BST122 JV P-CHANNEL ENHANCEMENT MODE VERTICAL D-MOS TRANSISTOR P-channel vertical D-MOS transistor in SOT89 envelope and intended fo r use in relay, high-speed and line-transformer drivers, using SMD-technology.

rjh3047

Abstract: rjh3077 rjp3047 RJH3047DPK rjp3049 rjp6065 rjp3053 RJP3042 smd code FX mosfet RJP6055
Contextual Info: 2007.12 Renesas Discrete General Catalog Transistor/Diode/ Triac/ Thyristor www.renesas.com Triacs and Thyristors Small-Signal Transistors Power Transistor Renesas discrete devices: extending the limits Advanced electronic equipment requires larger data processing

E67349

Abstract: TLP330
Contextual Info: TOSHIBA TLP330 TOSHIBA PHOTOCOUPLER GaAs IRED & PHOTO-TRANSISTOR TLP330 PROGRAMMABLE CONTROLLERS AC/DC-INPUT MODULE TELECOMMUNICATION The TOSHIBA TLP330 consists of a photo-transistor optically coupled to two gallium arsenide infrared emitting diode connected inverse

42t sot-23

Abstract: BCX716 BCD Schalter TFK BB transistor BC 458 BCX 458 TFK AF tfk s 154 p am/M29F002BB(45/55/70/90/TC5117800ANJ/BCX716 tfk 715
Contextual Info: l Ü F Gestempeltmit: BCW61ABCW61B BCW61C BCW61D BCX716 BCX71H BCX71J BCX71K Q O lli C l M a rk e d w ith : B» BB IC BD BO BH BJ BK D uW U l DPV11 * B l» A / I Silizium-PNP-Epitaxial-Planar-NF-Transistor Silicon PNP Epitaxial Planar AF Transistor Anwendungen: Vorstufen und Schalter in Dick- und Dünnfilmschaltungen

E67349

Abstract: TLP572
Contextual Info: TOSHIBA TLP572 TOSHIBA PHOTOCOUPLER PROGRAMMABLE CONTROLLERS IRED & PHOTO-TRANSISTOR TLP572 AC / DC - INPUT MODULE SOLID STATE RELAY The TOSHIBA TLP572 consists of a darlington connected photo­ transistor optically coupled to a gallium arsenide infrared emitting

E67349

Abstract: TLP531 TLP532
Contextual Info: TO SH IBA TLP531JLP532 TOSHIBA PHOTOCOUPLER GaAs IRED & PHOTO-TRANSISTOR TLP531, TLP532 PROGRAMMABLE CONTROLLERS AC/DC-INPUT MODULE SOLID STATE RELAY The TOSHIBA TLP531 and TLP532 consist of a photo-transistor optically coupled to a gallium arsenide infrared emitting diode in a

Contextual Info: MP4101 TOSHIBA TOSHIBA POWER TRANSISTOR MODULE SILICON NPN EPITAXIAL TYPE DARLINGTON POWER TRANSISTOR 4 IN 1 M P 4 1 01 HIGH POWER SWITCHING APPLICATIONS. INDUSTRIAL APPLICATIONS U nit in mm HAMMER DRIVE, PULSE MOTOR DRIVE. INDUCTIVE LOAD SWITCHING. 25.2 ± 0 .2

BT816

Abstract: TA114E a768 transistor b722 B861 B718 equivalent transistor TT 3034 C785 transistor b714 transistor B728
Contextual Info: DIGITAL TRANSISTOR APPLICATION: • EQUIVALENT CIRCUITS: Inverter, Driver & Interface Circuits FEATURES: •o OUT I N o -MA/V • Replaces up to three parts 1 transistor & 2 resis­ tors with one part • Available in a variety of surface mount or leaded

EN4539

Abstract: SB0703C
Contextual Info: I Ordering number:EN4539 _ FP301 TR : NPN Epitaxial Planar Silicon Transistor No.4539 SMÊYO SBD : Schottky B arrier Diode i DC/DC Converter Applications F eatures • Composite type with 2 devices NPN transistor and Schottky barrier diode contained in one package,

BUK455-500B

Abstract: T0220AB
Contextual Info: PHILIPS INTERNATIONAL bSE D B 711Gâ2ti GObMGTb SGÔ M P H I N Philips Semiconductors Product Spécification PowerMOS transistor GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic envelope. The device is intended for use in

10E-D3

Abstract: TLP532 E67349 TLP531
Contextual Info: TOSHIBA TLP531JLP532 TOSHIBA PHOTOCOUPLER GaAs IRED & PHOTO-TRANSISTOR TLP531, TLP532 PROGRAMMABLE CONTROLLERS A C /D C -IN PU T MODULE SOLID STATE RELAY The TOSHIBA TLP531 and TLP532 consist of a photo-transistor optically coupled to a gallium arsenide infrared emitting diode in a

TLP557

Abstract: E67349
Contextual Info: TOSHIBA PHOTOCOUPLER SEMICONDUCTOR TOSHIBA TECHNICAL TLP557 DATA G a A i As IRED & PHOTO-IC TLP557 Unit in mm TRANSISTOR INVERTOR INVERTER FOR AIR CONDITIONOR POWER TRANSISTOR BASE DRIVE The TOSHIBA TLP557 consists of a GaA^As light emitting diode and a integrated photodetector.

BUK457-500B

Abstract: GK 74 transistor
Contextual Info: bSE D m PHILIPS INTERNATIONAL 7110fl2b D D b m 4 1 361 « P H I N Philips Semiconductors Product Specification PowerMOS transistor GENERAL DESCRIPTION N-channel enhancement mode lield-effect power transistor in a plastic envelope. The device is intended for use In

2N3055 equivalent transistor NUMBER

Abstract: Y2w TRANSISTOR 2n3055 motor control circuits schematic diagram audio power amplifier using 2n3055 2N3055 equivalent 2N3055 diagram with power supply 2N3055 transistor equivalent transistor Y2W ICL8063 circuit diagram equivalent transistor 2n3055
Contextual Info: 01E 10753 3875081 G E SOLID STATE D ICL8063 Power Transistor Driver/Amplifier GENERAL DESCRIPTION FEATURES The ICL8063 is a unique monolithic power transistor driv­ er and amplifier that allows construction of minimum chip power amplifier systems. It includes built in safe operating

transistor b722

Abstract: b863 tc 144e Transistor b861 B861 equivalent transistor TT 3034 A771 TRANSISTOR B861 transistor DTC103 transistor TT 3034
Contextual Info: DTA/DTB/DTC/DTD DIGITAL TRANSISTOR APPLICATION: • EQUIVALENT CIRCUITS: Inverter, Driver & Interface Circuits FEATURES; w w w . Datasheet. i n • Replaces up to three parts 1 transistor & 2 resis­ tors with one part • Available in a variety of surface mount or leaded

2SA20

Abstract: 2SA2047 2SC5729 T106
Contextual Info: 2SC5729 Transistor Medium power transistor 30V, 0.5A 2SC5729 2.0 1.3 0.9 (1) (2) (3) 0.3 0.65 0.65 UMT3 0.7 !External dimensions (Units : mm) !Features 1) High speed switching. (Tf : Typ. : 50ns at IC = 500mA) 2) Low saturation voltage, typically (Typ. : 150mV at IC = 100mA, IB = 10mA)

IC HXJ 2038

Abstract: 1N52398 DB5T tfk 102 cny 70 hxj 2038 rca 40361 transistor rca 40362 TFK 680 CNY 70 Diode Equivalent 1N34A 2n5952 equivalent
Contextual Info: The Engineering Staff of TEXAS INSTRUMENTS INCORPORATED Components Group The T ransistor and Diode Data Book for Design Engineers T e x a s In s t r u m e n t s IN CO RPO RATED TYPE NUMBER INDEX GLOSSARY TRANSISTOR SELECTION GUIDES TRANSISTOR INTERCHANGEABILITY

Contextual Info: 2SC5729 Transistor Medium power transistor 30V, 0.5A 2SC5729 2.0 1.3 0.9 (1) (2) (3) 0.3 0.65 0.65 UMT3 0.7 !External dimensions (Units : mm) !Features 1) High speed switching. (Tf : Typ. : 50ns at IC = 500mA) 2) Low saturation voltage, typically (Typ. : 150mV at IC = 100mA, IB = 10mA)

equivalent transistor TT 3034

Abstract: transistor TT 3034 A771 TRANSISTOR transistor b722 124e transistor Transistor b865 tc 144e DTC1132 B718 TRANSISTOR 124E
Contextual Info: DTA/DTB/DTC/DTD DIGITAL TRANSISTOR APPLICATION: • EQUIVALENT CIRCUITS: Inverter, D river & Interface Circuits FEATURES; w w w . Datasheet. i n • Replaces up to three parts 1 transistor & 2 resis­ tors with one part • Available in a variety of surface mount or leaded

SC-43B

Abstract: PA33 VOLTAGE-60 SC43B
Contextual Info: NEC NPN SILICON TRANSISTOR AA1 F4N DESCRIPTION The A A 1 F 4 N is designed for use in medium speed switching circuit. PACKAGE DIMENSIONS in m illim e te rs inches FEATURE 52 MAX. (0204 MAX.) • Bias resistors built-in type NPN transistor equivalent circuit.