TRANSISTOR U4 Search Results

oz960

Abstract: khb*9D5N20P MB4213 KIA78*pI MN1280 F10P048 KIA7812A MJE13007 mb4213 equivalent TRANSISTOR SMD N2 3j
Contextual Info: Table of Contents Index 4 SMD ✞✟ Bipolar Junction Transistors Transistor Line-up PNP Transistor Transistor Line-up (NPN Transistor) Small Signal General Purpose Transistors Small Signal Low Noise Transistors Small Signal Audio Muting Transistors Small Signal High hFE Transistors

MPSU45

Abstract: transistor mpsu45
Contextual Info: , Una. J 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 TELEPHONE: 973 376-2922 (212)227-6005 FAX: (973) 376-8960 U.SA MPS-U45 (SILICON) NPN SILICON DARLINGTON TRANSISTOR NPN SILICON DARLINGTON AMPLIFIER TRANSISTOR . . . designed for amplifier and driver applications,

darlington power transistor 10a

Abstract: npn DARLINGTON 10A TO-202 transistor NPN IB-20mA CEN-U45 TO-202 transistor npn transistor gain 20 current 200mA
Contextual Info: Central TM Semiconductor Corp. CEN-U45 NPN SILICON DARLINGTON TRANSISTOR DESCRIPTION: The CENTRAL SEMICONDUCTOR CEN-U45 type is an NPN Silicon Monolithic Darlington Transistor designed for applications requiring high gain and high power dissipation. MARKING CODE: FULL PART NUMBER

transistor mpsu45

Abstract: MPSU45 MPS-U45 MPSU95 TRANSISTOR 2SC Audio Amplifier Applications MPS-U95 MPSU-45 MPSU45 transistor Darlington pair IC with 15 Amp mps a70 pnp transistor
Contextual Info: MPS-U45 SILICON NPN SILICON DARLINGTON TRANSISTOR NPN SILICON DARLINGTON AMPLIFIER TRANSISTOR . . designed fo r a m plifier and driver applications. • High DC C urrent Gain hpE = 25,000 (Min) @ l c = 200 mAdc 15,000 (Min) @ lc = 500 mAdc • C ollector-E m itter Breakdown Voltage —

Contextual Info: RN2101CT ~ RN2106CT TOSHIBA Transistor Silicon PNP Epitaxial Type PCT process (Bias Resistor built-in Transistor) RN2101CT, RN2102CT, RN2103CT RN2104CT, RN2105CT, RN2106CT Switching Applications Inverter Circuit Applications Interface Circuit Applications

Contextual Info: Philips Semiconductors Product specification PowerMOS transistor BUK564-200A Logic level FET_ GENERAL DESCRIPTION QUICK REFERENCE DATA SYMBOL N-channel enhancement mode logic level fieid-effect power transistor in a

darlington power transistor 10a

Abstract: IB-20mA TO-202 transistor TO-202 transistor NPN transistor TO-202 npn DARLINGTON 10A LC10A CEN-U45
Contextual Info: CEN-U45 w w w. c e n t r a l s e m i . c o m NPN SILICON DARLINGTON TRANSISTOR DESCRIPTION: The CENTRAL SEMICONDUCTOR CEN-U45 is a NPN silicon Darlington transistor designed for general purpose amplifier and driver applications where high gain and high power dissipation is required.

PNP TRANSISTOR "SOT89"

Abstract: SOT-89 TRANSISTOR PNP PNP TRANSISTOR SOT89 transistor PNP 5 w
Contextual Info: PNP ᒦ৖ൈहࡍྯ૵਌ PNP Medium Power Transistor PNP Medium Power Transistor FHFCX593 PNP ᒦ৖ൈहࡍྯ૵਌ DESCRIPTION & FEATURES 概述及特點 Medium Power Amplifier 中等功率放大 Complement to FHFCX493 SOT-89 PIN ASSIGNMENT 引腳說明

CEN-U45

Contextual Info: Datasheet central Sem icondu ctor Corp. CEN-U45 NPN SILICON DARLINGTON TRANSISTOR 145 Adam s Avenue, Hauppauge, NY 11788 USA Tel: 631 435-1110 • Fax: (631) 435-1824 JEDEC TO-202 CASE Manufacturers of World Class Discrete Semiconductors DESCRIPTION The CENTRAL SEMICONDUCTOR CEN-U45 type is a NPN Silicon Monolithic Darlington Transistor designed

NPN Transistor 1A 100V

Abstract: sot89 "NPN TRANSISTOR" npn TRANSISTOR SOT89 100v 1a transistor transistor Ib 1A NPN transistor Ic 1A NPN
Contextual Info: NPN ᒦ৖ൈहࡍྯ૵਌ NPN Medium Power Transistor NPN Medium Power Transistor FHFCX493 NPN ᒦ৖ൈहࡍྯ૵਌ DESCRIPTION & FEATURES 概述及特點 Medium Power Amplifier 中等功率放大 Complement to FHFCX593 SOT-89 PIN ASSIGNMENT 引腳說明

RN1101FS

Abstract: RN1106FS RN2101FS RN2102FS RN2103FS RN2104FS RN2105FS RN2106FS
Contextual Info: RN2101FS~RN2106FS TOSHIBA Transistor Silicon PNP Epitaxial Type PCT process (Bias Resistor built-in Transistor) RN2101FS,RN2102FS,RN2103FS RN2104FS,RN2105FS,RN2106FS Switching, Inverter Circuit, Interface Circuit and Driver Circuit Applications Unit: mm

Contextual Info: RN2101CT ~ RN2106CT TOSHIBA Transistor Silicon PNP Epitaxial Type PCT process (Bias Resistor built-in Transistor) RN2101CT,RN2102CT,RN2103CT RN2104CT,RN2105CT,RN2106CT Switching Applications Inverter Circuit Applications Interface Circuit Applications Driver Circuit Applications

RN2104FS

Abstract: RN2101FS RN2105FS RN1101FS RN1106FS RN2102FS RN2103FS RN2106FS
Contextual Info: RN2101FS~RN2106FS TOSHIBA Transistor Silicon PNP Epitaxial Type PCT process (Bias Resistor built-in Transistor) RN2101FS,RN2102FS,RN2103FS RN2104FS,RN2105FS,RN2106FS Switching, Inverter Circuit, Interface Circuit and Driver Circuit Applications 0.6±0.05

Contextual Info: RN2101FS~RN2106FS TOSHIBA Transistor Silicon PNP Epitaxial Type PCT process (Bias Resistor built-in Transistor) RN2101FS,RN2102FS,RN2103FS RN2104FS,RN2105FS,RN2106FS Switching, Inverter Circuit, Interface Circuit and Driver Circuit Applications 0.6±0.05

Contextual Info: RN2101FS~RN2106FS TOSHIBA Transistor Silicon PNP Epitaxial Type PCT process (Bias Resistor built-in Transistor) RN2101FS,RN2102FS,RN2103FS RN2104FS,RN2105FS,RN2106FS Switching, Inverter Circuit, Interface Circuit and Driver Circuit Applications 0.6±0.05

VCE-12V

Contextual Info: ౑ࡒ঱ຫ਌ NPN 7 GHz wideband transistor FHT591 NPN 7 GHz wideband transistor ౑ࡒ঱ຫ਌ DESCRIPTION & FEATURES 概述及特點 High power gain 高增益 Low noise figure 低雜訊 High transition frequency 超高頻 Intended for applications in the GHz range such as MATV or

2SD1066

Abstract: TRANSISTOR fuji 2sd1066 2SD106
Contextual Info: 2SD1066 FUJI POWER TRANSISTOR TRIPLE DIFFUSED PLANER TYPE BUILDING BLOCK TRANSISTOR ＮＰＮ三重拡散プレーナ形 ビルディング ブロック トランジスタ パワーダーリントン POWER DARLINGTON HIGH VOLTAGE,HIGH CURRENT,HIGH SPEED SWITCHING

Contextual Info: Philips Semiconductors Product specification TrenchMOS transistor Standard level FET GENERAL DESCRIPTION N-channel enhancement mode logic level tield-ettect power transistor in a plastic envelope suitable for surface mounting. Using ’trench’ technology

2SD981

Abstract: TV power transistor 700 v power transistor
Contextual Info: 2SD981 FUJI POWER TRANSISTOR TRIPLE DIFFUSED PLANER TYPE ULTRA HIGH β TRANSISTOR ＮＰＮ三重拡散プレーナ形 ウルトラハイベータ ウルトラハイベータ (UBT 外形寸法 : Outline Drawings 外形寸法: TO-3 特長 ：Features 特長：

2SC2770

Abstract: 013 transistor 2sc2770 fuji power supply pc
Contextual Info: 2SC2770 FUJI POWER TRANSISTOR ＮＰＮ三重拡散プレーナ形 ビルディング ブロック トランジスタ TRIPLE DIFFUSED PLANER TYPE BUILDING BLOCK TRANSISTOR 一般工業電源用 INDUSTRIAL USE POWER SUPPLY 外形寸法: 外形寸法 : Outline Drawings

2SD920

Abstract: 2SD92 700 v power transistor
Contextual Info: 2SD920 FUJI POWER TRANSISTOR ＮＰＮ三重拡散プレーナ形 ウルトラハイベータ ウルトラハイベータ (UBT TRIPLE DIFFUSED PLANER TYPE ULTRA HIGH β TRANSISTOR 一般工業電源用 INDUSTRIAL USE POWER SUPPLY 外形寸法 : Outline Drawings

Contextual Info: Philips Semiconductors Product specification PowerMOS transistor GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic envelope suitable for surface mount applications. The device is intended for use in automotive and general purpose

Contextual Info: HBDM60V600W COMPLEX TRANSISTOR ARRAY FOR BIPOLAR TRANSISTOR HALF H-BRIDGE MOTOR/ACTUATOR DRIVER Features Mechanical Data • • • • • Epitaxial Planar Die Construction Lead Free By Design/RoHS Compliant Note 1 "Green" Device (Note 2) Sub-Component P/N

k426

Abstract: LD 25 V BUK426-800A transistor bu
Contextual Info: ' T ~ 3 cî ' - ( Philips Com ponents Data sheet status Product specification date of issue March 1991 BUK426-800A/B PowerMOS transistor c.F n PHILIPS INTERNATIONAL I_ l GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a