TRANSISTOR TIP 142 Search Results

Contextual Info: PNP EPITAXIAL DARLINGTON TRANSISTOR TIPI 45F/146F/147F HIGH DC CURRENT GAIN MIN hFE = 1000 @ VCE = -4V, IC = -5A MONOLITHIC CONSTRUCTION WITH BUILT IN BASE-EMITTER SHUNT RESISTORS INDUSTRIAL USE C om plem ent to TIP 140F/141F/142F ABSOLUTE MAXIMUM RATINGS

Contextual Info: NPN EPITAXIAL DARLINGTON TRANSISTOR TIPI 40F/141 F/142F HIGH DC CURRENT GAIN MIN hFE = 1000 @ VCE = -4V, IC = -5A MONOLITHIC CONSTRUCTION WITH BUILT IN BASE-EMITTER SHUNT RESISTORS INDUSTRIAL USE C om plem ent to TIP 145F/146F/147F ABSOLUTE MAXIMUM RATINGS

Contextual Info: NPN EPITAXIAL DARLINGTON TRANSISTOR TIPI 40F/141 F/142F HIGH DC CURRENT GAIN MIN hFE = 1000 @ VCE = -4V, IC = -5A MONOLITHIC CONSTRUCTION WITH BUILT IN BASE-EMITTER SHUNT RESISTORS INDUSTRIAL USE C om plem ent to TIP 145F/146F/147F ABSOLUTE MAXIMUM RATINGS

Contextual Info: PNP EPITAXIAL DARLINGTON TRANSISTOR TIPI 45F/146F/147F HIGH DC CURRENT GAIN MIN hFE = 1000 @ VCE = -4V, IC = -5A MONOLITHIC CONSTRUCTION WITH BUILT IN BASE-EMITTER SHUNT RESISTORS INDUSTRIAL USE TO -3P F C om plem ent to TIP 140F/141F/142F ABSOLUTE MAXIMUM RATINGS

Contextual Info: NPN EPITAXIAL SILICON DARLINGTON TRANSISTOR TIPI 40/141/142 HIGH DC CURRENT GAIN MIN hFE = 1000 @ VCE = -4V, IC = -5A TO -3P MONOLITHIC CONSTRUCTION WITH BUILT IN BASE-EMITTER SHUNT RESISTORS INDUSTRIAL USE y . ' . W C om plem ent to TIP 145/146/147 ABSOLUTE MAXIMUM RATINGS

Contextual Info: PNP EPITAXIAL SILICON DARLINGTON TRANSISTOR TIPI 45/146/147 HIGH DC CURRENT GAIN MIN hFE = 1000 @ VCE = -4V, IC = -5A MONOLITHIC CONSTRUCTION WITH BUILT IN BASE-EMITTER SHUNT RESISTORS INDUSTRIAL USE TO -3P \A \ wh C om plem ent to TIP 140/141/142 ABSOLUTE MAXIMUM RATINGS

142 TRANSISTOR

Abstract: TIP140 TIP140F TIP141 TIP141F TIP142 TIP142F
Contextual Info: NPN EPITAXIAL TIP140/141 /142 SILICON DARLINGTON TRANSISTOR HIGH DC CURRENT GAIN MIN hFE = 1000 @ V ce = 4V, IC = 5A MONOLITHIC CONSTRUCTION WITH BUILT IN BASE-EMITTER SHUNT RESISTORS INDUSTRIAL USE TO -3P • C om plem ent to TIP 145/146/147 ABSOLUTE MAXIMUM RATINGS

tip 147 TRANSISTOR

Abstract: tip 145 transistor transistor tip 142 TIP14 tip 146 TIP-14 tip147c tip 141 transistor transistor tip 146
Contextual Info: PNP EPITAXIAL SILICON DARLINGTON TRANSISTOR TIP145/146/147 HIGH DC CURRENT GAIN MIN hFE= 1000 @ V ce = — 4V, lc = - 5 A MONOLITHIC CONSTRUCTION WITH BUILT IN BASE-EMITTER SHUNT RESISTORS INDUSTRIAL USE TO-3P Com plement to TIP140/141/142 ABSOLUTE MAXIMUM RATINGS

tip 147 TRANSISTOR

Abstract: TIP147F TIP146F TIP145F
Contextual Info: PNP EPITAXIAL DARLINGTON TRANSISTOR TIP145F/146F/147F HIGH DC CURRENT GAIN MIN hFE = 1000 @ Vce = -4V, IC = -5A MONOLITHIC CONSTRUCTION WITH BUILT IN BASE-EMITTER SHUNT RESISTORS INDUSTRIAL USE Complement to T IP 140F /141F /142F ABSOLUTE MAXIMUM RATINGS C haracteristic

tip 147 transistor

Abstract: transistor tip 142 npn tip tip 141 transistor tip 35 c transistor
Contextual Info: NPN EPITAXIAL SILICON DARLINGTON TRANSISTOR TIPI 40/141/142 HIGH DC CURRENT GAIN MIN h FE = 1000 @ V ce * -4V , IC = -5A MONOLITHIC CONSTRUCTION WITH BUILT IN BASE-EMITTER SHUNT RESISTORS INDUSTRIAL USE Com plem ent to TIP145/146/147 ABSOLUTE MAXIMUM RATINGS

141F

Abstract: 142F
Contextual Info: NPN EPITAXIAL DARLINGTON TRANSISTOR TIP140F/141F/142F HIGH DC CURRENT GAIN MIN hFE = 1000 @ VCE * -4V, IC = -5A MONOLITHIC CONSTRUCTION WITH BUILT IN BASE-EMITTER SHUNT RESISTORS INDUSTRIAL USE Com plem ent to T IP 145F/146F/147F ABSOLUTE MAXIMUM RATINGS C haracteristic

GE636

Contextual Info: PNP EPITAXIAL SILICON DARLINGTON TRANSISTOR TIP145T/146T/147T HIGH DC CURRENT GAIN-MIN hFE=1000 @ V ce = -4 V , lc = - 5 A T O -2 2 0 MONOLITHIC CONSTRUCTION WITH BUILT IN BASE-EMITTER SHUNT RESISTORS DINDUSTRIAL USE C o m p le m e n t to TIP140T/141T/142T

TIP 41 transistor

Contextual Info: NPN EPITAXIAL SILICON DARLINGTON TRANSISTOR TIP140T/141T/142T HIGH DC CURRENT GAIN-MIN hFE=1000 @ Vce=4V, lc = 5A MONOLITHIC CONSTRUCTION WITH BUILT IN BASE-EMITTER SHUNT RESISTORS DINDUSTRIAL USE C om plem ent to TIP145T/146T/147T ABSOLUTE MAXIMUM RATINGS

TIP 41 transistor

Abstract: MS62-7 tip142
Contextual Info: NPN EPITAXIAL SILICON DARLINGTON TRANSISTOR TIP140F/141F/142F HIGH DC CURRENT GAIN MIN hFE= 1000 @ V C e = -4 V , lc = - 5 A MONOLITHIC CONSTRUCTION WITH BUILT IN BASE-EMITTER SHUNT RESISTORS INDUSTRIAL USE TO -3PF C o m p le m e n t to T IP 1 4 5 F /1 4 6 F /1 4 7 F

Contextual Info: NPN EPITAXIAL TIP140/141/142 SILICON DARLINGTON TRANSISTOR HIGH DC CURRENT GAIN MIN hFE = 1000 @ VCE = 4V, IC = 5A MONOLITHIC CONSTRUCTION WITH BUILT IN BASE-EMITTER SHUNT RESISTORS INDUSTRIAL USE T O -3 P NPv • C o m p le m e n t to TI P 1 4 5 /1 4 6 /1 4 7

npn, transistor, sc 107 b

Abstract: transistor TIP 31A TIP 31a Transistor tip31a TIP32 NPN Transistor tip 31A 31076 TIP 133 transistor
Contextual Info: MO TO RO LA SC XSTRS/R F 12E D | b3b?ES4 aOflSSlô =1 | MOTOROLA SEMICONDUCTOR TECHNICAL DATA TIP31 TIP31A T1P31B TIP31C TIP32 TIP32A TIP32B TIP32C POWER TRANSISTORS COMPLEMENTARY SILICON . . . designed for use in general purpose amplifier and switching applications.

TIP308

Abstract: woy transistor transistor tip 30c tip 30 tip 30c tip 147 TRANSISTOR motorola tip29 LSE 0405
Contextual Info: MOT OR OL A SC 12E D 1 b3b7254 o a a s s i b s I XSTR S/ R F • 3 3 - Ö ? PNP ' NPN TIP29 T1P29A TIP29B TIP29C MOTOROLA SEMICONDUCTOR TECHNICAL DATA TIP30 TIP30A TIP30B TIP30C 1 A M PERE POWER TRANSISTORS COMPLEMENTARY SILICON COMPLEMENTARY SILICON PLASTIC

CTX01-15275

Abstract: GOERTZEL ALGORITHM fsk SOURCE CODE SI3201-GS Si3201-KS BCM11xx dtmf fsk caller id BCM33XX BCM3351 BCM63 ProSLIC
Contextual Info: Si3230 P R O SLIC P R O G R A M M A B L E CMOS SLIC W I T H R I N G I N G / B A T T E R Y VO L TA G E G E N E R A T I O N Features Software Programmable SLIC with codec interface Software programmable internal balanced ringing up to 90 VPK 5 REN up to 4 kft, 3 REN up to 8 kft

N681622

Abstract: W681388 TRANSISTOR Bf 310n N681387DG N681387 GKDF QFN-48 thermal resistance N681386 w684386 n681622yg
Contextual Info: N681386/87 Single Programmable Extended Codec/SLCC 1. DESCRIPTION The N681386/87, implements a single channel FXS telephone line interface optimized for short loop applications. It integrates SLCC Subscriber Line Control Circuit functionality with a programmable CODEC and a DC/DC controller.

tip146

Abstract: tip 146 TIP145 tip147 147 B transistor
Contextual Info: PNP EPITAXIAL SILICON DARLINGTON TRANSÌSTOR TIP145/146/147 HIGH DC CURRENT GAIN MIN hFE* 1000 @ V c e = *4V, IC * -5A MONOLITHIC CONSTRUCTION WITH BUILT IN BASE-EMITTER SHUNT RESISTORS INDUSTRIAL USE TO-3P Complement to TIP140/141/142 ABSOLUTE MAXIMUM RATINGS

SI3201-FS

Abstract: transistor 2Fn CTX01-15275 si3210-ft R1041 SI3210-E-FM si3210 bjt 2n2222 fairchild smd transistor 805 239 transistor equivalent 2n5551
Contextual Info: S i 3 2 1 0 / S i 3 2 11 P RO SLIC P ROGRAMMABLE CMOS SLIC/C ODEC W I T H R INGING / B A TT E R Y V OLTA GE G ENERATION Features   Performs all BORSCHT functions  Software-programmable signal generation and audio processing Software-programmable internal balanced

Si3201-gs

Abstract: dtmf fsk caller id D 1380 Transistor HC3110 ST 2n2222
Contextual Info: S i 3 2 1 0 / S i 3 2 11 P R O SLIC P R O G R A M M A B L E CMOS SLIC/C O D E C W I T H R I N G I N G / B A T T E R Y VO L TA G E G E N E R A T I O N Features Performs all BORSCHT functions Software-programmable internal balanced ringing up to 90 VPK 5 REN up to 4 kft, 3 REN up to 8 kft

transistor dtx 360 mosfet

Abstract: transistor dtx 360 SI3210-E-FM TRANSISTOR SMD MARKING CODE 2s TRANSISTOR SMD MARKING CODE r28 marking codes transistors sot-223 ON SEMI transistor smd marking codes c9 zetex zetex transistor to92 MARKING SMD PNP TRANSISTOR Y2 bjt 2n2222 fairchild
Contextual Info: S i 3 2 1 0 / S i 3 2 11 P RO SLIC P ROGRAMMABLE CMOS SLIC/C ODEC W I T H R INGING / B A TT E R Y V OLTA GE G ENERATION Features      Applications    Programmable audio processing DTMF encoding and decoding 12 kHz/16 kHz pulse metering

Si3201-gs

Abstract: transistor SMD 3906
Contextual Info: S i 3 2 1 0 / S i 3 2 11 P RO SLIC P ROGRAMMABLE CMOS SLIC/C ODEC W I T H R I N G I N G / B A T T E R Y VO L TAG E G ENERATION Features Performs all BORSCHT functions Software-programmable internal balanced ringing up to 90 VPK 5 REN up to 4 kft, 3 REN up to 8 kft