TRANSISTOR TIC 701 Search Results

Contextual Info: SAMSUNG ELECTRONICS INC MMBT2222A 42E D B 7 ^ 4 1 4 2 000=1033 S BISM6K NPN EPITAXIAL SILICON TRANSISTOR GENERAL PURPOSE TRANSISTOR ABSOLUTE MAXIMUM RATINGS Ta= 25°C C h a ra c te ris tic Sym bol R a tin g U n it Collector-Base Voltage Veso 75 V Collector-Emitter Voltage

Contextual Info: KSB596 PNP EPITAXIAL SILICON TRANSISTOR POWER AMPLIFIER A PPLICATIO NS • C om plem ent to KSD 526 ABSOLUTE MAXIMUM RATINGS R a tin g U n it C ollector-Base Voltage C h a ra c te ris tic V cB O Sym bol - 80 V C ollecto r-E m itte r Voltage V cE O - 80 V Em itter-Base Voltage

702 TRANSISTOR

Abstract: 702 P TRANSISTOR MJE700 702 Z TRANSISTOR transistor 702 transistor k 702 BVCEO 2000 TRansistor 701
Contextual Info: mr c r i i h a im l MJE700/701 /702/703 SILICON DARLINGTON TRANSISTOR HIGH DC CURRENT GAIN MIN hFE= 750 lc= -1.5 and -2.0A DC MO NO LITHIC CONSTRUCTION W ITH BUILT-IN BASE-EMITTER RESISTORS • C o m p le m e n t to M J E 8 0 0 /8 0 1 /8 0 2 /8 0 3 ABSOLUTE M AXIMUM RATINGS

IAO5 Sharp

Abstract: free transistor equivalent book 2sc siemens transistor asy 27 Diode BAY 61 TRANSISTOR BJ 131-6 tesla typ 202 thyristor Tesla z1072 HALL EFFECT 21E z1071
Contextual Info: SIEM EN S Semiconductor Manual Discrete Industrial Types 1974 ACY 23, ACY 32 PNP Transistors for AF pre-stages The ACY 23 and ACY 32 are alloyed germanium PNP transistors in the case 1 A 3 DIN 41871 sim. TO -1 . The leads are electrically insulated from the case. The

B553AC

Abstract: mpa56c JUPD1701 TQC-231 MFI33
Contextual Info: MOS INTEGRATED CIRCUIT /¿RDI 701 CT-113 P H A S E L O C K E D L O O P F R E Q U E N C Y S Y N T H E S IZ E R F M /A M D IG IT A L T U N IN G S Y S T E M C O N T R O L L E R C M O S LSI The UPD1701CT-113 is a single c h ip CM OS c o n tro lle r designed fo r using as a Phase Locked L o op F requency

KSA910

Contextual Info: KSA910 PNP EPITAXIAL SILICON TRANSISTOR DRIVER STAGE OF AUDIO AMPLIFIER HIGH VOLTAGE SWITCHING APPLICATIONS TO -92L • Com plem ent to KSC2310 • Collector-E m itter V oltage V Ceo * -15 0V • Output Capacitance: Co«“ 5 p F MAX ABSOLUTE MAXIMUM RATINGS (1*251 )

samsung tv

Abstract: 4142
Contextual Info: SAMSUNG INC S EM I C ON D U C T O R KSC1520A IME 0007542 NPN EPITAXIAL SILICON TRANSISTOR " r-3 2 > - c n ~ COLOR TV CHROMA OUTPUT TO-202 • High Collector-Emitter \foltaga Veto =300V • Current Gain-Bandwldth Product fT=80MHz Typ ABSOLUTE MAXIMUM RATINGS (Ta=25°C)

germanium transistor asy

Abstract: 18y4 ASY48 21 k 1564 y703
Contextual Info: ESC D • Û235b05 00040Û7 r - 37 - 0 7 b H SIE6 ASY48 ASY70 PNP Transistors for Switching Applications - SIEMENS A K T IE N G E S E LL S C H A F Not for new design A S Y 48 and A S Y 70 are alloyed germanium PN P transistors in 1 A 3 DIN 41871 case

GP1A34LC

Contextual Info: GP1A34LC SHARP GP1A34LC OPIC Photointemipter with Con­ nector • Features ■ O utlne Dim ensions 1. Snap-in mounting type 2. Can be mounted on 2 different thickness boards 1.0mm, 1.6mm . 3. Uses 3-pin connector terminal 4. High sensing accuracy (Slit width : 0.5mm)

2SK73

Abstract: 2sk736
Contextual Info: NEC N-CHANNEL MOS FIELD EFFECT POWER TRANSISTOR ELECTRON DEVICE DESCRIPTION 2SK736 The 2SK736 is N-Channel MOS Field E ffect Power Transistor PACKAG E DIM EN SIO N S designed fo r solenoid, m o to r and lamp driver. in millimeters inches FEATUR ES • Gate Drive — Logic level —

3866S

Abstract: BF247 equivalent brochage des circuits integres Triac GK transistor bc 564 BC547E TI Small Signal FET Catalogue bcw 91 transistor SESCO SESCOSEM
Contextual Info: GENERAL INFORMATION , , v^ INFORMATION GENERALE ” ; V Index Index 3 ' v.»A* K \ a 1 Selection guide Guide de sélection Qualified devices Dispositifs homologués Quality Qualité Symbols Symboles DATA SHEETS NOTICES SILICON SIGNAL TRANSISTORS TRANSISTORS DE SIGNAL AU SILICIUM

BF 234 transistor

Abstract: transistor KSC2786 RF POWER TRANSISTOR 100MHz samsung tv
Contextual Info: Inc SAMSUNG SEMICONDUCTOR KSC2786 i*e ° aoofibM q | ~ r - jj~ fy NPN EPITAXIAL SILICON TRANSISTOR a • r TV PIF AMPLIFIER, FM TUNER RF AMPLIFIER, MIXER, OSCILLATOR TO-92S • High Cumnt-CMIn-Bandwidth Product fT=600MHz iyp • High Power Gain Gp«=22dB at f=100MHz

power semi conductor

Contextual Info: SAMSUNG SEMICONDUCTOR I NC 14É KSA636 | 7 cî k , 4 m 2 0007407 1 PNP EPITÂXIAL SILICON TRANSISTOR T -33-17 LOW FREQUENCY POWER AMPLIFIER » • • • Complement to KSC1098 • High Collector-Base Vbltage V cbo = -70V Collector Current lc = - 2 A Collector Dissipation PC=10W T c =25°C

bd142

Contextual Info: Power Transistors * _ X - 3 3 _ - 1 3 BD142 File Number HARRIS SEMICOND SECTOR - B7E< D High-Power Silicon N-P-N Transistor B M3D2S71 DGSGlDa 701 BIH AS •TERMINAL DESIGNATIONS General-Purpose Device For Commercial Use Features: • M a x im u m -sa fe -a re a -o f-o p e ra tio n curves

135055

Abstract: 2sc828a D 711 N 60 T MN8201SW panasonic MN8201sw a7z transistor
Contextual Info: PANASONIC INDL/ELEK -CICJ 72 6 9 3 2 8 52 P A N A S O N I C DE'Jb'jaafiSa [I00L.701 & J - I N D U E L E C T R O N IC_ 7 2C 0 6 7 0 1 .D y-41 -55 MN8201SW zyy M N8201SW C P D E l f t í U t S I ^ / C P D C H A R G E P R IM IN G D E V IC E S o lid -S ta te

catalogue des transistors bipolaires de puissance

Abstract: brochage des circuits integres H3C1-07 LB 124 transistor equivalente transistor A2222 equivalent of transistor bc212 bc 214 BFw-11 terminals SESCOSEM transistor equivalente transistor BC 141 Brochage BCW91
Contextual Info: GENERAL INFORMATION , , v^ INFORMATION GENERALE ” ; V Index Index 3 ' v.»A* K \ a 1 Selection guide Guide de sélection Qualified devices Dispositifs homologués Quality Qualité Symbols Symboles DATA SHEETS NOTICES SILICON SIGNAL TRANSISTORS TRANSISTORS DE SIGNAL AU SILICIUM

Contextual Info: F U JIT S U HIGH FREQUENCY OPERATIONAL AMPLIFIER I I MB3604 Decem ber 1987 E d itio n 1.0 HIGH FREQUENCY OPERATIONAL AMPLIFIER The Fujitsu MB3604 is a monolithic high frequency operational amplifier fabricated by Fujitsu Bipolar Technology. The MB3604 has differential inputs, single-end output, and an on-chip buffer

TRANSISTOR 1G

Contextual Info: Catalog 1307612 4 M V IV * Specialty Sockets Revised 7-01 TO-3 Power Transistor Sockets 8080-1G Series PERFORMANCE SPECIFICATIONS: FEATURES: The 8080- 1G family of TO-3 Power Transistor Sockets is used for both small and large signal devices. Used in power supplies, power amplifiers,

TP50N

Abstract: 06vl
Contextual Info: MOTOROLA Order this document by MTP50N06VL/D SEMICONDUCTOR TECHNICAL DATA Designer’s Data Sheet MTP50N06VL TMOS V Pow er Field E ffect Transistor Motorola Preferred Device N-Channel Enhancement-Mode Silicon Gate TMOS POWER FET 42 AMPERES 60 VOLTS RDS on = 0-032 OHM

Contextual Info: MOTOROLA Order this document by MTP50N06VL/D SEMICONDUCTOR TECHNICAL DATA D esigner’s Data Sheet MTP50N06VL TMOS V Power Field Effect Transistor Motorola Preferred Device N-Channel Enhancement-Mode Silicon Gate TMOS V is a new technology designed to achieve an on-resistance area product about one-half that of standard MOSFETs. This

Contextual Info: KSD471A NPN EPITAXIAL SILICON TRAN SISTO R AUDIO FREQUENCY POW ER AM PLIFIER TO-92 • Complement to KSB564A • Collector Current lc” 1A • Collector Dissipation Pc=800m W ABSO LU TE MAXIMUM RATINGS TA«25t: Characteristic Sym bol Collector-Base Voltage

k455

Abstract: BUK455 BUK455-200A BUK455-200B T0220AB
Contextual Info: bTE D N AMER PHI LIP S/ DI SC R ET E • 0D30b50 Ô3D H A P X Philips Semiconductors Product Specification PowerMOS transistor GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic envelope. The device is intended for use in

transistors BC 557C

Abstract: BF366 SMD code 307C F199 transistor 2N5793 BC413 motorola ZENER diode marking code z7 equivalent of transistor bc212 bc 214 bc107c motorola 2n555
Contextual Info: S e le c to r G u id e s 1 M e ta l-C a n T ra n s is to rs 3 F ie ld -E ffe c t T ra n s is to rs 4 S m a ll-S ig n a l T u n in g , S w itc h in g and Z e n e r D io d e s 5 T a p e a n d R eel S p e c ific a tio n s P a ck ag e O u tlin e D im e n s io n s and

2SK799

Abstract: 2sk79 NEC 701
Contextual Info: NEC N-CHANNEL MOS FIELD EFFECT POWER TRANSISTOR ELECTRON DEVICE DESCRIPTION 2SK799 The 2SK799 is N-channel MOS Field Effect Power Transistor PACKAGE DIMENSIONS designed for switching power supplies, DC-DC converters. FEATURES • in millimeters inches Suitable fo r switching power supplies, actuater controls,