TRANSISTOR TF 431 Search Results

Contextual Info: Ordering number : EN5126 ._ 2SC5238 NPN Triple Diffused Planar Silicon Transistor Ultrahigh-Definition CRT Display Horizontal Deflection Output Applications F eatures • High speed tf = 100ns typ . • High breakdown voltage (Vcbo = 1500V).

transistor tt 2222

Abstract: C7f TRANSISTOR BLY92C BLY92C/01 BLY92
Contextual Info: Philips Semiconductors b b S 3 T 3 1 Q 0 2 tì 7 4 0 CHT • A P X ^ u c ^ p e c m c a tfó n BLY92C/01 VHF power transistor N AUER PHILIPS/DISCRETE b*lE » PIN CONFIGURATION DESCRIPTION NPN silicon planar epitaxial transistor designed for use in class-A, B and C operated mobile,

UI132

Abstract: 2SC4425
Contextual Info: Ordering n u m b e r:EN 2848 _ 2 S C 4 4 2 5 NPN Triple Diffused Planar Silicon Transistor Sw itching R egulator A pplications F eatures . High breakdown voltage, high reliability • Fast switching speed tf: 0.1 ps typ • WideASO • Adoption of MBIT process

2222 031 capacitor philips

Abstract: TRANSISTOR 43IL 271 Ceramic Disc Capacitors BLF348 015 capacitor philips 2222 032 capacitor MKT Philips VCB228 Philips 2222 capacitor 2222 035 electrolytic capacitor
Contextual Info: P hilips Sem iconductors VHF linear push-pull power MOS transistor PH ILIPS T - tf- lZ INTERNATIONAL 5bE D 711 005b BLF348 D0M3RD3 031 H P H I N PIN CONFIGURATIO N FE A T U R E S • High power gain • Easy power control • Good thermal stability • Gold metallization ensures

transistor 431A

Abstract: 431a WPT-431A transistor 431A DATASHEET "photo transistor" npn photo transistor counters ic 431-A
Contextual Info: Waitrony Photo Transistor 2-03-02-12 Module No.: WPT-431A 1. General Description: Dimensions The WPT-431A is a high sensitivity NPN silicon phototransistor mounted in a clear epoxy side looking package. It is compact, low profile and easy to mount. 2. Features

sd 431 transistor

Contextual Info: N ANER PHILIPS/DISCRETE bRE D • bb53T31 0D3DSSS 431 « A P X Philips Semiconductors Product Specification PowerMOS transistor GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a lastic full-pack envelope, he device is intended for use in

wabash relay

Abstract: 1820-3145 1826-0346 Rohm op amp tkf 28 1826-0180 Caddell-Burns Manufacturing e1420 5053HD619K0F GRM3195C1H102JD01D
Contextual Info: Agilent E1420B Component Level Information E1420B Universal Counter Component Level Information Information in this packet applies to the following assemblies: 1. E1420-68006 PC Assembly VXI Assembly 2. 53310-60008 PC Assembly (Input Board) The following is included in this packet:

pbss4160dpn

Abstract: transistor smd marking 431.k
Contextual Info: PBSS4160DPN 60 V, 1 A NPN/PNP low VCEsat BISS transistor Rev. 02 — 14 July 2005 Product data sheet 1. Product profile 1.1 General description NPN/PNP low VCEsat Breakthrough in Small Signal (BISS) transistor pair in a SOT457 (SC-74) Surface Mounted Device (SMD) plastic package.

BLV97

Abstract: D-10 ferroxcube wideband hf choke
Contextual Info: N AMER PH I L I P S / D I S C R E T E - " • w vu ObE D w I ■ w b t,S3 T 3 1 D1 3 L 2 fi •9 N O R T H / A M P E R E X / D I S C R ETE DLE D BLV97 'TZ33~J U.H.F. P O W E R TRANSISTOR N-P-N silicon planar epitaxial transistor in SOT-171 envelope intended fo r use in class-B operated base

Contextual Info: N AMER PHILIPS/DISCRETE bbS3T31 DDBflflRO LQ3 I APX b'lE D l BLU99 BLU99/SL U.H.F. POWER TRANSISTOR N-P-N silicon planar epitaxial transistor primarily intended for use in mobile radio transmitters in the u.h.f. band. The transistor is also very suitable for application in the 900 MHz mobile radio band.

2n3055 motorola

Abstract: tip122 tip127 audio amp schematic transistor equivalent book 2sc2238 IR640 transistor motorola 40411 TRANSISTOR REPLACEMENT GUIDE ir431 motorola AN485 C2688 2SA1046
Contextual Info: Index and Cross Reference 1 Selector Guide 2 Data Sheets 3 Surface Mount Package Information and Tape and Reel Specifications 4 Outline Dimensions and Leadform Options 5 Applications Information 6 Thermal Clad is a trademark of the Bergquist Company. Chipscretes, Designers’, Duowatt, EpiBase, PowerBase, PowerTap, SUPERBRIDGES, Surmetric, Switchmode, Thermopad,

Contextual Info: N AMER PHILIPS/DISCRETE • UVU DbE D V I ■ W bt,53T31 0013b5fi 1 ^ ^ '» NORTH/AMPEREX/DISCRETE OLE D BLV97 _ U.H.F. POWER TRANSISTOR N-P-N silicon planar epitaxial transistor in SOT-171 envelope intended fo r use in class-B operated base station transmitters in the 900 MHz communications band.

BUK452-50A

Abstract: BUK452-50B T0220AB
Contextual Info: N AMER PHI LIP S/ DI SCRETE btS3*131 002DM3Ü 4 2SE D BUK452-50A BUK452-50B PowerMOS transistor T - 37-1/ GENERAL DESCRIPTION N-channel enhancement mode fiefd-effect power transistor in a plastic envelope. The device is intended for use in Switched Mode Power Supplies

IBJT

Abstract: SCR Handbook, General electric AN9319 Rudy Severns 5 hp DC motor speed control using scr d50026 "General Electric SCR Manual" 6th AN918 MOTOROLA 14v 10A mosfet TA84-5
Contextual Info: Harris Semiconductor No. AN9319 Harris Power September 1993 Parallel Operation Of Insulated Gate Transistors Author: Sebald R. Korn, Consulting Applications Engineer that the only part of the bipolar in parallel to the MOSFET and modulation resistance is the base-collector junction, but

BLV98

Contextual Info: 41E D PHILIPS INTERNATIONAL • 711002h 002740b b H P H I N '' BLV98 r-33-n U.H.F. POWER TRANSISTOR N-P-N silicon planar epitaxial transistor in SOT-171 envelope intended for use in class-B operated base station transmitters in the 900 M Hz communications band.

IBJT

Abstract: General Electric SCR Manual 6th edition AN9319 TA84-5 "General Electric SCR Manual" 6th Rudy Severns d50026 AN918 MOTOROLA Pelly 7402N
Contextual Info: Parallel Operation Of Insulated Gate Transistors In the November issue of Powertechnics, the general considerations of paralleling semiconIn Application Note C + VBE IMOS RMOD g ITOT + VCE - - + VDS IBJT ITOT = IMOS + IBJT IBJT = βBJTIMOS VBE + IMOSRMOD = VDS

AN569

Abstract: MTY20N50E
Contextual Info: MOTOROLA Order this document by MTY20N50E/D SEMICONDUCTOR TECHNICAL DATA  Data Sheet TMOS E-FET. Power Field Effect Transistor Designer's MTY20N50E Motorola Preferred Device N–Channel Enhancement–Mode Silicon Gate TMOS POWER FET 20 AMPERES 500 VOLTS

S 170 MOSFET TRANSISTOR

Abstract: MTW20N50E-D TO-247 Package
Contextual Info: MOTOROLA Order this document by MTW20N50E/D SEMICONDUCTOR TECHNICAL DATA  Data Sheet TMOS E-FET. Power Field Effect Transistor TO-247 with Isolated Mounting Hole Designer's MTW20N50E Motorola Preferred Device TMOS POWER FET 20 AMPERES 500 VOLTS RDS on = 0.24 OHM

Contextual Info: PBSS4160DPN 60 V, 1 A NPN/PNP low VCEsat BISS transistor Rev. 03 — 11 December 2009 Product data sheet 1. Product profile 1.1 General description NPN/PNP low VCEsat Breakthrough in Small Signal (BISS) transistor pair in a SOT457 (SC-74) Surface Mounted Device (SMD) plastic package.

PBSS4160DPN

Abstract: transistor smd marking 431.k MOSFET TRANSISTOR SMD MARKING CODE B4
Contextual Info: PBSS4160DPN 60 V, 1 A NPN/PNP low VCEsat BISS transistor Rev. 03 — 11 December 2009 Product data sheet 1. Product profile 1.1 General description NPN/PNP low VCEsat Breakthrough in Small Signal (BISS) transistor pair in a SOT457 (SC-74) Surface Mounted Device (SMD) plastic package.

transistor bt 808

Abstract: "General Electric SCR Manual" 6th BT thyristor 808 General Electric SCR Manual 6th edition IBJT General Electric SCR components Data Manual TA84-5 AN918 MOTOROLA Severns 7402N
Contextual Info: Parallel Operation Of Insulated Gate Transistors Application Note bt raleran Of ued te antors utho eyrds ter- C IMOS rpoon, minctor, ache ergy ted, itch wer pes, wer itch - RMOD g + VBE ITOT + VCE - - + VDS IBJT ITOT = IMOS + IBJT IBJT = βBJTIMOS VBE + IMOSRMOD = VDS

IBJT

Abstract: "General Electric SCR Manual" 6th 7512 low drop ic General Electric Semiconductor General Electric SCR Manual 6th edition Rudy Severns gto 5A 500V TA84-5 AN918 Paralleling Power MOSFETs in Switching Applications D50026
Contextual Info: Parallel Operation Of Insulated Gate Transistors Application Note C IMOS RMOD g + VBE ITOT + VCE - - + VDS IBJT ITOT = IMOS + IBJT IBJT = βBJTIMOS VBE + IMOSRMOD = VDS e FIGURE 1. N-CHANNEL IGT TRANSISTOR STEADY STATE EQUIVALENT CIRCUIT To understand the unusual behavior of its temperature coefficient, negative at low current, almost zero at normal current,

mje 3001

Abstract: MJ3583 2N3583 MOTOROLA MJ3585 MJ3701 2N3583 MJ2253 MJ3760 MJ3761 transistor SE 431
Contextual Info: MJ3583 thru MJ3585 SILICON MJ3701 (SILICON) p o r specifications, §ee 2N3583 Data. For Specifications, See MJ2253 Data. MJ3760 (silicon) MJ3761 H O RIZO N TAL D E FL E C T IO N SILICO N TR A N SISTO R S 6.0/8.0 AM PERE T R IP L E D IFF U S E D POWER TR A N S IS TO R S

smd transistor marking A5

Abstract: SC74 marking 345 transistor smd code marking 431 PBSS4160DS PBSS5160DS
Contextual Info: PBSS5160DS 60 V, 1 A PNP low VCEsat BISS transistor Rev. 02 — 28 June 2005 Product data sheet 1. Product profile 1.1 General description PNP/PNP low VCEsat Breakthrough in Small Signal (BISS) transistor pair in a SOT457 (SC-74) Surface Mounted Device (SMD) plastic package.