TRANSISTOR TE 468 Search Results

NEC 1357

Abstract: LA 8873 TRANSISTOR C 4460
Contextual Info: DATA SHEET SILICON TRANSISTOR 2SC5004 NPN SILICON EPITAXIAL TRANSISTOR 3 PINS ULTRA SUPER MINI MOLD DESCRIPTION The 2SC5004 is a low supply voltage transistor designed for UHF PACKAGE DIMENSIONS in m illim e te rs OSC/MIX. It is suitable for a high density surface mount assem bly since the

SN 4931

Abstract: 2sc 3476 2SC 1885 SN 4931 N
Contextual Info: DATA SHEET SILICON TRANSISTOR 2SC5005 NPN SILICON EPITAXIAL TRANSISTOR 3 PINS ULTRA SUPER MINI MOLD DESCRIPTION The 2SC5005 is a low supply voltage transistor designed for UHF PACKAGE DIMENSIONS in m illim e te rs OSC/MIX. It is suitable for a high density surface mount assem bly since the

D 1437 transistor

Contextual Info: DATA SHEET SILICON TRANSISTOR 2SC5004 NPN SILICON EPITAXIAL TRANSISTOR 3 PINS ULTRA SUPER MINI MOLD DESCRIPTION The 2 S C 5004 is a low supply voltage transistor designed for UHF PACKAGE DIMENSIONS in m illim e te rs OSC/M IX. It is suitable for a high density surface mount assembly since the

4216td

Abstract: 10peration SMP3N50F
Contextual Info: SMP3N50F fT S iE c o n ix JLm in c o r p o r a te d N-Channel Enhancement Mode Transistor Fast Reverse Recovery TO -220A B TOP VIEW o PRODUCT SUMMARY V BR DSS r DS(ON) •d trr (V) (ft) (A) (n s ) 500 3.0 2.5 250 1 GATE 2 DRAIN (Connected to TAB) 3 SOURCE

2SC752

Abstract: 2sc752 k ATIC80 FPC-20 CX513 2sC752 transistor LT 752 CL25 fs3 npn transistor 2sC752
Contextual Info: ' j ' J 3 y N P N T ¥ 5> * ì > ? \ ; 7 [ s - + B ^ y V Z 9 SILICON NPN EPITAXIAL PLANAR TRANSISTOR O «-J-ttJHftJB. Utr-stm o U l t r a H ig h S p e e d S w i t c h i n g A p p l i c a t i o n s , o C o m p u te r , C o u n t o r A p p l i c a t i o n s .

QM200DY-2H

Contextual Info: i MITSUBISHI TRANSISTOR MODULES i HIGH POWER SWITCHING USE ; QM200DY-2H | INSULATED TYPE QM200DY-2H APPLICATION Inverters, Servo drivers, DC m otor controllers, NC equipm ent, W elders OUTLINE DRAWING & CIRCUIT DIAGRAM Dimensions in mm Tab# 110, 1=0 5 2 - 464

3866S

Abstract: BF247 equivalent brochage des circuits integres Triac GK transistor bc 564 BC547E TI Small Signal FET Catalogue bcw 91 transistor SESCO SESCOSEM
Contextual Info: GENERAL INFORMATION , , v^ INFORMATION GENERALE ” ; V Index Index 3 ' v.»A* K \ a 1 Selection guide Guide de sélection Qualified devices Dispositifs homologués Quality Qualité Symbols Symboles DATA SHEETS NOTICES SILICON SIGNAL TRANSISTORS TRANSISTORS DE SIGNAL AU SILICIUM

4468A

Abstract: C2024 transistor A00390 FR 9024 IC 4468 2SB1295 LA3235W LA4590W SQFP-48 ac din hfe nv
Contextual Info: Ordering n u m b e r:EN 4 468A Monolithic Linear 1C N0.4468A // SA \YO LA4590W 1.5 V Stereo Headphone Preamplifier and Power Amplifier i Overview Package Dimensions T he L A 4590W is a system IC that collects the functions unit: m m required for a playback set in a single chip, and reduces

transistor NEC D 822 P

Abstract: NEC D 986 transistor NEC B 617 2SC4228 transistor NEC D 587 r44 marking transistor D 2624
Contextual Info: DATA SHEET NEC SILICON TRANSISTOR 2SC4228 HIGH FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR SUPER MINI MOLD DESCRIPTION The 2SC4228 is a low supply voltage transistor designed for VHF, PACKAGE DIMENSIONS in millimeters UHF low noise amplifier.

2N5070

Abstract: RCA-2N5070 2N5070 equivalent rca 2N5070 IB77 Single-Sideband overlay transistor 1156N VK200 rca transistor
Contextual Info: File No. 268 RF P o w er T ransisto rs Solid State Division 2N5070 Silicon N -P -N Overlay Transistor For High-Frequency Single-Sideband Communications Equipment Features: • Suitable lo r class A or class B amplifiers ■ 25 W PEP ou tput min. at 30 MHz w ith

Contextual Info: N AMER PHILIPS/DISCRETE 2SE D • ^53=131 Q020bfl5 4 ■ PowerMOS transistor Fast Recovery Diode FET BUK637-600A BUK637-600B BUK637-600C T ' - 3 cM £ ' _ GENERAL DESCRIPTION QUICK REFERENCE DATA N-channel enhancement mode field-effect power transistor in a

IC HXJ 2038

Abstract: 1N52398 DB5T tfk 102 cny 70 hxj 2038 rca 40361 transistor rca 40362 TFK 680 CNY 70 Diode Equivalent 1N34A 2n5952 equivalent
Contextual Info: The Engineering Staff of TEXAS INSTRUMENTS INCORPORATED Components Group The T ransistor and Diode Data Book for Design Engineers T e x a s In s t r u m e n t s IN CO RPO RATED TYPE NUMBER INDEX GLOSSARY TRANSISTOR SELECTION GUIDES TRANSISTOR INTERCHANGEABILITY

M37470E4-XXXSP

Contextual Info: M IT S U B IS H I M IC RO CO M PUTERS M 37470E4-XXXSP M 37470E8-XXXSP PROM VER SIO N of M 3 7 4 7 0 M 4 -X X X S P .M 3 7 4 7 0 M 8 -X X X S P DESCRIPTION The M37470E4-XXXSP is a single-chip microcomputer de­ signed with CMOS silicon gate technology. It is housed in a

ST DARLINGTON TRANSISTOR

Abstract: ULN2003 hfe 1976 Darlington pair IC single
Contextual Info: SN75468, SN75469 DARLINGTON TRANSISTOR ARRAYS SLRS023B - DECEMBER 1976 - REVISED SEPTEMBER 1995 HIGH-VOLTAGE HIGH-CURRENT DARLINGTON TRANSISTOR ARRAYS • 500-mA Rated Collector Current Single Output d or n package (TOP VIEW) • High-Voltage Outputs . . . 100 V

NEC IC D 553 C

Abstract: nec 2741 702 mini transistor
Contextual Info: DATA SHEET SILICON TRANSISTOR 2SC4226 HIGH FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR SUPER MINI MOLD DESCRIPTION The 2SC4226 is a low supply voltage transistor designed for VHF, UHF low PACKAGE DIMENSIONS in millimeters noise amplifier.

Contextual Info: ANALOG DEVICES □ Monolithic Thermocouple Amplifiers with Cold Junction Compensation AD594*/AD595* FEATURES Pretrim m ed for T y pe J AD594 or Type K (AD595) Th e rm o co u p le s C an Be U se d w ith Type T T h erm o co u ple Inp uts L o w Im pedance V o ltag e O utput: 10mV/°C

Contextual Info: TEN •i 8 TOSHIBA 2SK3441 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type U-MOSII 2SK3441 DC-DC Converter Relay Drive and Motor Drive Applications Unit: mm • • • • Low drain-source ON resistance: Rpg (on) = 4 .5 m£2 (typ.) High forward transfer admittance: | Yfs I = 80 S (typ.)

Contextual Info: CCD Area Image Sensor MN3728FT,MN3728AT 6mm type-1/3 768H CCD Area Image Sensor • Overview Part Number Size MN3728FT MN3728AT 6mm(type-1/3) ■ Features ea s ht e v tp is :// it pa fo na llo so win ni g c. U co R .jp L a /s bo em u ic t la on te /e st

transistor IR 652 P

Abstract: FS Series Miniature Power Film TH Resistor MAX649CSA
Contextual Info: ykiyjxiw i 19-0225; Rev 1; 7/94 , 5 V /3 .3 V /3V or Adjustable High-Efficiency, Low IQ, Step-Down DC-DC Controllers T he se d e v ic e s use m in ia tu re e xte rn a l c o m p o n e n ts . Their high sw itch in g fre q u e n cy up to 300kHz allows for less than 9mm diam eter surface-m ount inductors.

Contextual Info: / k l / J X I / k l CMOS M icropow er Inverting S w itching Regulator _ General Description Maxim's MAX634 and MAX4391 CMOS DC-DC regu­ lators are designed for simple, efficient, inverting DC-DC converter circuits. The MAX634 and MAX4391

Contextual Info: 19-0049; Rev 0; 10/92 Palm top Com puter and Flash M em ory Power-Supply R egulators The MAX717-MAX721 provide three improvements over prior-art devices. Physical size is reduced - th e high switch­ ing frequencies up to 0.5MHz m ade possible by MOSFET

Contextual Info: CCD Area Image Sensor MN3728FT,MN3728AT 6mm type-1/3 768H CCD Area Image Sensor • Overview Part Number Size MN3728FT MN3728AT 6mm(type-1/3) ■ Features di p Pl lan nclu ea e se pla m d m des ne ain ain foll htt visit d te t o p:/ fo /w llo dis disc nan enan wing

Contextual Info: N AMER PHILIPS/DISCRETE PowerM OS transistor ObE D • bbBBTBl 0014760 1 B U Z 33T T - 3<M3 May 1987 GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic envelope. The device is intended for use in Switched Mode Power Supplies

IS22C011-P

Contextual Info: IS22C011 8 to 12 SEC INSTANT VOICE ROM ISSI OCTOBER 1998 FEATURES • Voice length at: - 8 KHz sampling is 8 seconds - 6 KHz sampling is 10 seconds - 5 KHz sampling is 12.8 seconds • Four trigger pins, S1 to S4 for eight sections • SBT pin play-all or sequential play-all