TRANSISTOR T8 Search Results

pulse 01940

Abstract: NEC IC D 553 C 5598 transistor transistor D 2581 NEC 2581 30460
Contextual Info: DATA SHEET SILICON TRANSISTOR 2SC4954 HIGH FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR MINI MOLD FEATURES • Low Noise, High Gain • Low V oltage Operation • Low Feedback Capacitance C re PACKAGE DIMENSIONS in millimeters 2 .8 ± 0.2

Contextual Info: MITSUBISHI RF POWER TRANSISTOR 2S C 2131 NPN EPITAXIAL PLANAR TYP E DESCRIPTION OUTLINE DRAWING 2SC2131 is a silicon NPN epitaxial planar type transistor designed for RF power amplifiers in UHF band mobile radio applications. Dimensions in mm FEATURES •

IC 811 0400 01

Abstract: TRANSISTOR 2SC 950
Contextual Info: DATA SHEET SILICON TRANSISTOR 2SC4958 HIGH FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR SUPER MINI MOLD FEATURES • Low Noise, High Gain • Low Voltage Operation • Low Feedback Capacitance C re PACKAGE DIM ENSIONS in m illim eters , 1.25 ±0.1

3563 1231

Abstract: transistor NEC B 617 nec d 1590
Contextual Info: DATA SHEET NEC SILICON TRANSISTOR 2SC5015 HIGH FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR 4 PINS SUPER MINI MOLD FEATURES PACKAGE DIMENSIONS in millimeters • Small Package • High Gain Bandwidth Product fr = 12 GHz TYP. • Low Noise, High Gain

NEC IC D 553 C

Abstract: CB 548 transistor NEC D 553 C
Contextual Info: DATA SHEET NEC SILICON TRANSISTOR 2SC4955 HIGH FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR MINI MOLD FEATURES • Low Noise, High Gain PACKAGE DIMENSIONS • Low Voltage Operation in millimeters • Low Feedback Capacitance 2 .8 ± 0.2 Cre = 0.4 pF TYP.

nec 2651

Abstract: hfe 4049 2454 transistor 2SC5177 2SC5177-T1 2SC5177-T2 285-2 MAG IC t84 marking of IC 4047 8 pin ic 3773
Contextual Info: DATA SHEET SILICON TRANSISTOR 2SC5177 NPN EPITAXIAL SILICON TRANSISTOR IN MINI-MOLD PACKAGE FOR LOW-NOISE MICROWAVE AMPLIFICATION FEATURES PACKAGE DIMENSIONS Units: mm • Low Current Consumption and High Gain |S21e|2 = 9.0 dB TYP. @ VCE = 2 V, IC = 7 mA, f = 2 GHz

nec 2571

Abstract: NEC D 553 C nec 2571 4 pin NEC IC D 553 C 3771 nec nec 716 nec 1565 transistor marking T83 ghz
Contextual Info: DATA SHEET SILICON TRANSISTOR 2SC4957 HIGH FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR 4 PINS MINI MOLD FEATURES • Low Noise, High Gain PACKAGE DIMENSIONS • Low Voltage Operation in millimeters • Low Feedback Capacitance Cre = 0 .3 p F T Y P .

2SC2131

Abstract: NT 407 F TRANSISTOR 2SC213
Contextual Info: MITSUBISHI RF POWER TRANSISTOR 2SC2131 NPN EPITAXIAL PLANAR T Y P E DESCRIPTION OUTLINE DRAWING 2SC2131 is a silicon NPN epitaxial planar typ e transistor designed fo r RF power am plifiers in U H F band m obile radio applications. Dimensions in mm <¿9.39

ac 51 0865 75 849

Abstract: 7082 B amplifier 7082 B ic audio amplifier
Contextual Info: DATA SHEET SILICON TRANSISTOR juPA807T MICROWAVE LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR WITH BUILT-IN 2 ELEMENTS SUPER MINI MOLD PACKAGE DRAWINGS FEATURES • (Unit: mm) Low Current, High Gain |Szie|2 = 9 dB T Y P . @ Vce = 2 V, le = 7 mA, f = 2 GHz

SG 2368

Contextual Info: DATA SHEET NEC SILICON TRANSISTOR 2SC5183 NPN EPITAXIAL SILICON TRANSISTOR IN 4-PIN MINI-MOLD PACKAGE FOR LOW-NOISE MICROWAVE AMPLIFICATION FEATURES PACKAGE DIMENSIONS • Low Noise • NF = 1.3 dB typ. @ Vce = 2 V, Ic = 3 mA, f = 2 GHz • NF = 1.3 dB typ.

transistor NEC D 882 p

Abstract: 33 nec 125 t2 transistor NEC D 587 nec d 882 p transistor transistor
Contextual Info: DATA SHEET SILICON TRANSISTOR 2SC5179 NPN EPITAXIAL SILICON TRANSISTOR IN SMALL MINI-MOLD PACKAGE FOR LOW-NOISE MICROWAVE AMPLIFICATION FEATURES • PACKAGE DIMENSIONS Units: mm Low current consum ption and high gain |Szie|2 = 9 dB TYP. @ V ce = 2 V, Ic = 7 mA, f = 2 GHz

ap 4606

Abstract: nec 2651 ic CD 4047 8 pin ic 3773
Contextual Info: DATA SHEET SILICON TRANSISTOR 2SC5177 NPN EPITAXIAL SILICON TRANSISTOR IN MINI-MOLD PACKAGE FOR LOW-NOISE MICROWAVE AMPLIFICATION FEATURES • Low Current Consum ption and High Gain PAC KAG E DIMENSIONS Units: mm |Szie|2 = 9.0 dB TYP. @ V ce = 2 V, Ic = 7 mA, f = 2 GHz

RH1034-1.2

Contextual Info: DATA SHEET NEC SILICON TRANSISTOR 2SC5182 NPS EPITAXIAL SILICON TRANSISTOR IN MINI-MOLD PACKAGE FOR LOW-NOISE MICROWAVE AMPLIFICATION FEATURES PACKAGE DIMENSIONS • Low noise • N F = 1.3 dB ty p . @ Vce = 2 V, Ic = 3 mA, f = 2 GHz • N F = 1 .3 dB ty p

fe 5571

Abstract: KS 0302
Contextual Info: DATA SHEET NEC SILICON TRANSISTOR 2SC5183 NPN EPITAXIAL SILICON TRANSISTOR IN 4-PIN MINI-MOLD PACKAGE FOR LOW-NOISE MICROWAVE AMPLIFICATION FEATURES PACKAGE DIMENSIONS • Low N oise • NF = 1.3 dB typ. @ Vce = 2 V, Ic = 3 m A, f = 2 G H z • NF = 1.3 dB

transistor zo 607

Abstract: 4044 for amplification 865 IC marking ZO 607 transistor 2SC5184 2SC5184-T1 2SC5184-T2 marking 624 sc-70 14893 transistor C 5386
Contextual Info: DATA SHEET SILICON TRANSISTOR 2SC5184 NPN EPITAXIAL SILICON TRANSISTOR IN SUPER MINI-MOLD PACKAGE FOR LOW-NOISE MICROWAVE AMPLIFICATION FEATURES PACKAGE DIMENSIONS • Low Noise • NF = 1.3 dB TYP. @ VCE = 2 V, IC = 3 mA, f = 2 GHz • NF = 1.3 dB TYP. @ VCE = 1 V, IC = 3 mA, f = 2 GHz

2SD1025

Abstract: T8L20 2SD102 transistor TC-10 200v 5a transistor
Contextual Info: SHINDENGEN Darlington Transistor OUTLINE DIMENSIONS 2SD1025 Case : TO-220 T8L20 Unit : mm 8A NPN RATINGS œAbsolute Maximum Ratings Item Storage Temperature Junction Temperature Collector to Base Voltage Collector to Emitter Voltage Emitter to Base Voltage

transistor C 5386

Abstract: 24 5805 054 000 829 c 4468 power transistor
Contextual Info: DATA SHEET NEC SILICON TRANSISTOR 2SC5184 NPN EPITAXIAL SILICON TRANSISTOR IN SUPER MINI-MOLD PACKAGE FOR LOW-NOISE MICROWAVE AMPLIFICATION FEATURES P A C K A G E D IM E N S IO N S • Low Noise • NF = 1.3 dB typ. @ Vce = 2 V, Ic = 3 mA, f = 2 GHz • NF = 1.3 dB

2SC4055

Abstract: T8V45FX
Contextual Info: SHINDENGEN Switching Power Transistor FX Series OUTLINE DIMENSIONS 2SC4055 Case : TO-220 T8V45FX Unit : mm 8A NPN RATINGS œAbsolute Maximum Ratings Item Storage Temperature Junction Temperature Collector to Base Voltage Collector to Emitter Voltage Emitter to Base Voltage

LA 7693

Abstract: ic CD 4047 7737 transistor
Contextual Info: DATA SHEET NEC SILICON TRANSISTOR 2SC5014 HIGH FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR 4 PINS SUPER MINI MOLD FEATURES • S m a ll P acka ge • H igh G ain B a n d w id th P ro d u c t fr = 12 G H z T Y P . • Lo w N oise, H igh G ain

Contextual Info: 83B BSS84AKMB SO T8 50 V, single P-channel Trench MOSFET Rev. 1 — 6 June 2012 Product data sheet 1. Product profile 1.1 General description P-channel enhancement mode Field-Effect Transistor FET in a leadless ultra small DFN1006B-3 (SOT883B) Surface-Mounted Device (SMD) plastic package using Trench

Contextual Info: Central" CMPT8099 NPN CMPT8599 PNP S em iconductor COMPLEMENTARY SILICON TRANSISTOR DESCRIPTION: The C ENTRAL S EM IC O N D U C TO R C M P T8099, C M PT8599 types are C o m p le m e nta ry S ilico n T ra n sisto rs manufactured by the epitaxial planar process,

2SC3184

Abstract: 20HB1
Contextual Info: Ordering number: EN 1252C 2SC3184 N 0.1252C NPN Triple Diffused Planar Silicon Transistor SAÜYO i Switching Regulator Applications Features •High breakdown voltage Vcbo =900V . •Fast switching speed. •Wide ASO. min VCB = 800V,IE = 0 Veb = 5V,Ic = 0

DU2820S

Abstract: fl capacitor 1000 K 739 mosfet
Contextual Info: -= -=i an AMP comDanv = RF MOSFET Power Transistor, 2OW, 28V 2 - 175 MHz DU2820S Features N-Channel Enhancement Mode Device DMOS Structure Lower Capacitances for Broadband Operation High Saturated Output Power Lower Noise Figure Than Bipolar Devices Absolute Maximum Ratings at 25°C

DU1215S

Contextual Info: RF MOSFET Power Transistor, ISW, 12V 2 - 175 MHz DU1215S Features l l l l l l N-Channel Enhancement Mode Device DMOS Structure Lower Capacitances for Broadband Operation High Saturated Output Power Lower Noise Figure Than Bipolar Devices Specifically Designed for 12 Volt Applications