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    PDTC143EMB Search Results

    PDTC143EMB Datasheets (3)

    NXP Semiconductors
    Part ECAD Model Manufacturer Description Datasheet Type PDF PDF Size Page count
    PDTC143EMB
    NXP Semiconductors NPN resistor-equipped transistor; R1 = 4.7 kOhm, R2 = 4.7 kOhm Original PDF 720.6KB 11
    PDTC143EMB,315
    NXP Semiconductors PDTC143EMB - PDTC143EMB - NPN resistor-equipped transistor; R1 = 4.7 kOhm, R2 = 4.7 kOhm Original PDF 720.61KB 11
    PDTC143EMB315
    NXP Semiconductors NOW NEXPERIA PDTC143EMB - SMALL Original PDF 977.99KB
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    PDTC143EMB Price and Stock

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    Nexperia PDTC143EMB-315

    TRANS PREBIAS NPN 50V 0.1A 3DFN
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    DigiKey () PDTC143EMB-315 Cut Tape 8,860 1
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    PDTC143EMB-315 Tape & Reel 8,860 10,000
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    Nexperia PDTC143EMB,315

    - Tape and Reel (Alt: PDTC143EMB,315)
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    Avnet Americas PDTC143EMB,315 Tape & Reel 30 Weeks 30,000
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    Mouser Electronics () PDTC143EMB,315 9,430
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    PDTC143EMB,315 9,430
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    Verical () PDTC143EMB,315 88,700 5,301
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    PDTC143EMB,315 62,307 5,301
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    PDTC143EMB,315 30,000 5,301
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    Rochester Electronics PDTC143EMB,315 181,007 1
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    Avnet Asia PDTC143EMB,315 30 Weeks 30,000
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    NXP Semiconductors PDTC143EMB,315

    Trans Digital BJT NPN 50V 100mA 250mW Automotive 3-Pin DFN-B T/R
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    Verical PDTC143EMB,315 119,975 5,301
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    Rochester Electronics PDTC143EMB,315 119,975 1
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    Nexperia PDTC143EMB

    Small Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 1-Element, NPN, Silicon
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    Vyrian PDTC143EMB 5,290
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    PDTC143EMB Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    PDTC143EMB

    Abstract: PDTA143
    Contextual Info: 83B PDTC143EMB SO T8 NPN resistor-equipped transistor; R1 = 4.7 k , R2 = 4.7 k Rev. 1 — 7 June 2012 Product data sheet 1. Product profile 1.1 General description NPN Resistor-Equipped Transistor RET in a leadless ultra small SOT883B Surface-Mounted Device (SMD) plastic package.


    Original
    PDTC143EMB OT883B PDTA143EMB. AEC-Q101 PDTC143EMB PDTA143 PDF

    PDTC143EMB

    Contextual Info: 83B PDTC143EMB SO T8 NPN resistor-equipped transistor; R1 = 4.7 kΩ, R2 = 4.7 kΩ Rev. 1 — 7 June 2012 Product data sheet 1. Product profile 1.1 General description NPN Resistor-Equipped Transistor RET in a leadless ultra small SOT883B Surface-Mounted Device (SMD) plastic package.


    Original
    PDTC143EMB OT883B PDTA143EMB. AEC-Q101 PDTC143EMB PDF

    circuit diagram wireless spy camera

    Abstract: PDTB123Y IP4303CX4 dual cc BAW62 3267 tsop6 PCMF2DFN1 BST60 PUMD4 PDTB123E PDTA143
    Contextual Info: Discrete Semiconductors Selection Guide 2014 Protection and signal conditioning devices, diodes, bipolar transistors, MOSFETs and thyristors. NXP’s next generation of packaging DFN Discrete Flat No-lead packages – high performance on smallest footprint


    Original
    DFN1006D-2 OD882D) DFN1010D-3 OT1215) DFN2020MD-6 OT1220) DFN1608D-2 OD1608) DSN0603 OD962) circuit diagram wireless spy camera PDTB123Y IP4303CX4 dual cc BAW62 3267 tsop6 PCMF2DFN1 BST60 PUMD4 PDTB123E PDTA143 PDF

    PDTC143EMB

    Abstract: PDTA143
    Contextual Info: 83B PDTA143EMB SO T8 PNP resistor-equipped transistor; R1 = 4.7 k , R2 = 4.7 k Rev. 1 — 14 May 2012 Product data sheet 1. Product profile 1.1 General description PNP Resistor-Equipped Transistor RET in a leadless ultra small DFN1006B-3 (SOT883B) Surface-Mounted Device (SMD) plastic package.


    Original
    PDTA143EMB DFN1006B-3 OT883B) PDTC143EMB. AEC-Q101 PDTC143EMB PDTA143 PDF

    PDTC143EMB

    Contextual Info: 83B PDTA143EMB SO T8 PNP resistor-equipped transistor; R1 = 4.7 kΩ, R2 = 4.7 kΩ Rev. 1 — 14 May 2012 Product data sheet 1. Product profile 1.1 General description PNP Resistor-Equipped Transistor RET in a leadless ultra small DFN1006B-3 (SOT883B) Surface-Mounted Device (SMD) plastic package.


    Original
    PDTA143EMB DFN1006B-3 OT883B) PDTC143EMB. AEC-Q101 PDTC143EMB PDF