TRANSISTOR T44 Search Results

nec 817

Abstract: MARKING TRANSISTOR T44 PT4250 2SC3545
Contextual Info: DATA SHEET SILICON TRANSISTOR 2SC3545 UHF OSCILLATOR AND MIXER NPN SILICON EPITAXIAL TRANSISTOR MINI MOLD DESCRIPTION The 2SC3545 is an NPN silicon epitaxial transistor intended for use as PACKAGE DIMENSIONS Units: mm UHF oscillator and mixer in a tuner of a TV receiver.

2SC3545

Abstract: LEN-160 MARKING TRANSISTOR T44
Contextual Info: DATA SHEET SHEET DATA SILICON TRANSISTOR 2SC3545 UHF OSCILLATOR AND MIXER NPN SILICON EPITAXIAL TRANSISTOR MINI MOLD DESCRIPTION The 2SC3545 is an NPN silicon epitaxial transistor intended for use as UHF oscillator and mixer in a tuner of a TV receiver. The device features stable oscillation and small frequency drift against

Contextual Info: N APIER PHILIPS/DISCRETE bTE T> b b S B ' m □Q2flc?c17 T44 • APX BLV33F A V.H.F. LINEAR POWER TRANSISTOR N-P-N silicon planar epitaxial transistor prim arily intended fo r use in linear v.h.f. amplifiers fo r television transmitters and transposers. Features o f this product:

blw86

Abstract: 43120203664 BY206 431202036640 choke IEC134 pdst47q sot-123-2 ferroxcube wideband hf choke
Contextual Info: N AMER PHILIPS/DISCRETE bbSB'îai DDSTHbl 071 • APX BLW86 b'ïE D A H.F./V.H.F. POWER TRANSISTOR N-P-N silicon planar epitaxial transistor intended fo r use in class-A, AB and B operated h.f. and v.h.f. transm itters w ith a nominal supply voltage o f 28 V. The transistor is resistance stabilized and is

Contextual Info: MJEC340 CHIP MEDIUM POWER NPN 0.5 AMPERE SILICON TRANSISTOR POWER TRANSISTOR NPN SILICON 300 VOLTS .useful for high-voltage general purpose applications. - Suitable for Transformerless, Line-Operated Equipment - Thermopad Construction Provides High Power Dissipation Rating

NES6294Z

Contextual Info: NES6294Z 4 AMPERE NPN DARLINGTON POWER TRANSISTOR SILICON POWER DARLINGTON TRANSISTOR • • • • General Purpose Amplifier and Switching Application High Current Gain hFE = 3000 Typ @ 2A Monolithic Construction Built in Base Emitter Shunt Resistors

NSG2555

Abstract: TRANSISTOR T4
Contextual Info: NSG2555 4 AMPERE NPN DARLINGTON POWER TRANSISTOR SILICON POWER DARLINGTON TRANSISTOR • • • • General Purpose Amplifier and Switching Application High Current Gain hFE = 3000 Typ @ 2A M onolithic Construction Built in Base Emitter Shunt Resistors

y51 h 120c

Abstract: bd124 KT368 BFQ59 Silec Semiconductors BD214 al103 AFY18 bd192 MM1711
Contextual Info: Towers' International Transistor Selector ! o Towers’ International Transistor Selector Specification data for the identification, selection and substitution of transistors by T D Towers, MBE, MA, BSc, C Eng, MIERE Revised Edition U pdate Three London: NEW YORK

Contextual Info: ?M VE5 MJEC350 CHIP MEDIUM POWER PNP 0.5 AMPERE SILICON TRANSISTOR POWER TRANSISTOR PNP SILICON 300 VOLTS .designed for use in line-operated applications such as low power line-operated series pass and switching regulators requiring PNP capability. •

Contextual Info: Back to Bipolar Darlington Transistors NSG2556 PNP 20 AMPERE PNP SILICON DARLINGTON POWER TRANSISTOR P N P DARLINGTON POWER TRANSISTOR General Purpose Amplifier Low Frequency Switching High DC Current Gain Monolithic Construction Built in Base Emitter Shunt Resistors

MARKING TRANSISTOR T44

Abstract: MPSA44
Contextual Info: CHENMKO ENTERPRISE CO.,LTD CHT44PT SURFACE MOUNT NPN High Voltage Transistor VOLTAGE 400 Volts CURRENT 0.3 Ampere APPLICATION * Video out to drive color CRT * Other high voltage applications. SOT-23 * NPN High Voltage Transistor .066 1.70 CONSTRUCTION .110 (2.80)

CHT44GP

Contextual Info: CHENMKO ENTERPRISE CO.,LTD CHT44GP SURFACE MOUNT NPN High Voltage Transistor VOLTAGE 400 Volts CURRENT 0.3 Ampere APPLICATION * Video out to drive color CRT * Other high voltage applications. SOT-23 * NPN High Voltage Transistor .066 1.70 CONSTRUCTION .110 (2.80)

sx3704

Abstract: AP239 Transistor 80139 8C547 6C131C IN2222A 2N50B 2N2064 radio AC176 AC126 sft353
Contextual Info: INTERNATIONAL TRANSISTOR EQUIVALENTS GUIDE A LSO BY THE S A M E AUTHOR BP108 International Diode Equivalents Guide BP140 Digital IC Equivalents and Pin Connections BP141 Linear IC Equivalents and Pin Connections ALSO OF INTEREST BP234 Transistor Selector Guide

Response AA0482

Abstract: 49/Response AA0482
Contextual Info: SECTION 2 SPECIFICATIONS INTRODUCTION The DSP56303 is fabricated in high density CMOS with Transistor-Transistor Logic TTL compatible inputs and outputs. The DSP56303 specifications are preliminary and are from design simulations, and may not be fully tested or guaranteed at this

Contextual Info: Back to Bipolar Power Transistors MJEC340 CHIP MEDIUM POWER NPN 0.5 AMPERE SILICON TRANSISTOR POWER TRANSISTOR NPN SILICON 300 VOLTS .useful for high-voltage general purpose applications. - Suitable for Transformerless, Line-Operated Equipment - Thermopad Construction Provides High Power Dissipation Rating

NES6287Z

Abstract: New England Semiconductor
Contextual Info: NES6287Z ^NEW ENGLAND SEMICONDUCTOR 20 AMPERE PNP SILICON DARLINGTON POWER TRANSISTOR • • • • • P N P DARLINGTON POWER TRANSISTOR General Purpose Amplifier Low Frequency Switching High DC Current Gain Monolithic Construction Built in Base Emitter Shunt Resistors

TRANSISTOR T4

Abstract: NSG2557
Contextual Info: NSG2557 ^ M W ^NEW ENGLAND SEMICONDUCTOR 2 0 AMPERE NPN SILICON DARLINGTON POWER TRANSISTOR • • • • • NPN DARLINGTON POWER TRANSISTOR General Purpose Amplifier Low Frequency Switching High DC Current Gain Monolithic Construction Built in Base Emitter Shunt Resistors

Contextual Info: T im e s ? ^PP NSG2559 ^NEW ENGLAND SEMICONDUCTOR NPN SILICON POWER TRANSISTOR • • • • 10 AMPERE POWER TRANSISTOR NPN SILICON Medium Speed Switching Amplifier Excellent Safe Operating Area Total Switching Time @ 3A, 1.15|is MAXIMUM RATINGS Rating

Contextual Info: _ J V BD720 BD722 BD724 BD726 SILICON EPITAXIAL-BASE POWER TRANSISTOR PNP transistor in a SOT32 plastic envelope intended for use in audio output and general purpose amplifier applications. BD720 is equivalent to BD440. NPN complements are BD719; 721; 723 and

BLW 95

Contextual Info: h*\E t> m b b s a ^ a i o o s T H b i o?i i IAPX N A PIER PHILIPS/DISCRETE BLW 86 H.F./V.H.F. POWER TRANSISTOR N-P-N silicon planar epitaxial transistor intended fo r use in class-A, AB and B operated h.f. and v.h.f. transmitters with a nominal supply voltage of 28 V. The transistor is resistance stabilized and is

RCA H 541

Abstract: 2T312 2N2654 AS218 transistor gex 74a diode germanium 1n283 K3004 TFK diode ac132 TI-483
Contextual Info: $ 1.50 Cat. No. SSH-6 /U*A TRANSISTOR SUBSTITUTION HANDBOOK by The Howard W. Sams Engineering Staff HOWARD W. SAMS & CO., INC. THE BOBBS-MERRILL COMPANY, INC. Indianapolis • New York SIXTH EDITION FIRST PRINTING — FEBRUARY, 1965 TRANSISTOR SUBSTITUTION HANDBOOK

New England Semiconductor

Abstract: NES6284
Contextual Info: NES6284 ^ M W ^NEW ENGLAND SEMICONDUCTOR 2 0 AMPERE NPN SILICON DARLINGTON POWER TRANSISTOR • • • • • NPN DARLINGTON POWER TRANSISTOR General Purpose Amplifier Low Frequency Switching High DC Current Gain Monolithic Construction Built in Base Emitter Shunt Resistors

Contextual Info: Back to Bipolar Power Transistors NES3716Z NPN SILICON POWER TRANSISTOR • • • • 10 AMPERE POWER TRANSISTOR NPN SILICON Medium Speed Switiching Amplifier Excellent Safe Operating Area Total Switching Time @ 3A, 1.15|is MAXIMUM RATINGS Rating Collector-Emitter Voltage

Contextual Info: T im e s ? ^PP NES3716Z ^NEW ENGLAND SEMICONDUCTOR NPN SILICON POWER TRANSISTOR • • • • 10 AMPERE POWER TRANSISTOR NPN SILICON Medium Speed Switching Amplifier Excellent Safe Operating Area Total Switching Time @ 3A, 1.15|is MAXIMUM RATINGS Rating