TRANSISTOR T 04 59 Search Results

GMA14

Abstract: GMA64
Contextual Info: ISSUED DATE :2005/04/04 REVISED DATE : G M A6 4 P N P E P I TA X I A L P L A N A R T R A N S I S T O R Description The GMA64 is a darlington amplifier transistor designed for application requiring extremely high current gain. Features High DC current gain

sot-223 body marking D K Q F

Contextual Info: MOTOROLA Order this document by MMFT108T1/D SEMICONDUCTOR TECHNICAL DATA T Field Effect Transistor N-Channel Enhancement-Mode Logic Level SOT-223 MMFT108T1 TM OS 2 ,4 DRAIN TMOS FET TRANSISTOR N-CHANNIEL — ENHANCEMENT CASE 318E-04, STYLE 3 SOT-223 TO-261AA

G8050S

Abstract: G8550S
Contextual Info: CORPORATION G8050S ISSUED DATE :2004/04/22 REVISED DATE :2004/11/29B N P N E P I TA X I A L T R A N S I S T O R LOW VOLTAGE HIGH CURRENT SMALL SIGNAL NPN TRANSISTOR Description The G8050S is a low voltage high current small signal NPN transistor, designed for Class B push-pull audio

GMA14

Contextual Info: ISSUED DATE :2001/10/04 REVISED DATE :2006/05/10C G M A1 4 NP N E PITAX I AL PLANAR T RANSI STOR Description The GMA14 is a Darlington amplifier transistor designed for applications requiring extremely high current gain. Package Dimensions SOT-89 Millimeter

CA3095E

Abstract: CA3095 cascode transistor array AN-D02 NPN pnp MATCHED PAIRS array
Contextual Info: File No. 591 Linear Integrated Circuits Solid State Monolithic Silicon Division CA3095E Super-Beta Transistor Array Differential Cascode A m plifier Plus 3 Independent Transistors Applications Differential Cascode Amplifier: • Super-beta pre-amplifier for op-amp

SMD TRANSISTOR MARKING P28

Abstract: SMD transistor MARKING CODE g23 TRANSISTOR SMD MARKING CODE kn SMD MARKING CODE P28 g23 SMD Transistor 5962-8950303GC smd transistor marking G23 5962-8950303PA gu32 SMD TRANSISTOR MARKING jf
Contextual Info: REVISIONS LTR D DESCRIPTION DATE YR-MO-DA APPROVED Add device type 05. Add vendor CAGE 27014. Make changes to 1.3, 1.4, table I, figures 1 ,3 ,4 , 5, and 6. 93-05-10 M. A. FRYE Changes in accordance with N.O.R. 5962-R053-94. 94-06-24 M. A. FRYE Redrawn with changes. Technical and editorial changes

62003F

Abstract: 62004f 62004A TD62801P 62004AP A 107 transistor TD62XXX 62c852
Contextual Info: [ 2 ] PRODUCT LINEUP 1. Bipolar Transistor Arrays [2 ] PRODUCT LINEUP 1. Bipolar Transistor Arrays B i p o l a r |Tra n s i st o r| TD62 xxx rray| 40Series, 226Devices P TTL O UTPUT Sustaining Voltage (V ç e (su s ) P/PA /F/FB/FN A P/APA /A F/AFN : B P/B P- I/B F

TD62597A

Contextual Info: SILICON M O N O L IT H IC BIPO LAR D IG IT A L IN T EG R A T ED CIRCUIT - TD62593AFNJD62594AFN TD62597AFNJD62598AFN 8ch SINGLE DRIVER : C O M M O N EMITTER Th e TD 62 593, 4, 7, 8 A F N are co m prise d o f e ig h t N PN

2.45V PRECISION REFERENCE REGULATOR

Abstract: GQ2141
Contextual Info: ISSUED DATE :2006/04/04 REVISED DATE : GQ2141 C M O S P o s i t i v e Vo l t a g e R e g u l a t o r Description The GQ2141 of positive, linear regulator feature low quiescent current 50 A typ. with low dropout voltage and excellent PSRR, thus making them ideal for Telecommunications and other battery applications.

ELI-1

Abstract: TD62591 TD62591AP TD62592AP TD62593AP TD62594AP TD62595AF TD62595AP TD62596AF TD62596AP
Contextual Info: TOSHIBA TD62591 ~594AP,595~598AP/AF TOSHIBA BIPOLAR DIGITAL INTEGRATED CIRCUIT SILICON MONOLITHIC TD62591AP, TD62592AP, TD62593AP, TD62594AP TD62595AP, TD62595AF, TD62596AP, TD62596AF TD62597AP, TD62597AF, TD62598AP, TD62598AF 8CH SINGLE DRIVER The TD62591AP, TD62591AF Series are comprised of eight

transistor SMD 12W MOSFET

Abstract: transistor SMD 12W transistor JE 1090 smd transistor code 12w
Contextual Info: H GE PACKAGE FEATURES Silicon MOSFET Technology Operation from 24V to 50V High Power Gain Extreme Ruggedness Internal Input and Output Matching Excellent Thermal Stability All Gold Bonding Scheme Pb-free and RoHS Compliant TYPICAL PERFORMANCE High voltage vertical technology is well suited for high power pulsed applications in the

3F152

Abstract: G5M2163 3F182 3F292
Contextual Info: ISSUED DATE :2005/04/29 REVISED DATE : G5M 2163 C M O S P o s i t i v e Vo l t a g e R e g u l a t o r Description The G5M2163 series of positive, linear regulators feature low quiescent current 30 A typ. with low dropout voltage, making them ideal for battery applications.

LTC4006

Abstract: LT1512 LTC4060 LTC1759 DFN-16 LT1510 LT1513 LT1769 LTC4010 LTC4011
Contextual Info: 02.2007 Battery Charger Solutions High Performance Analog ICs Linear Technology’s high performance battery charger ICs Each battery chemistry has unique battery-charging require- enable long battery life by providing precision charging ments. Selecting the correct battery charger increases the

BLF861

Abstract: BLF861A UT70 821 ceramic capacitor
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET M3D392 BLF861A UHF power LDMOS transistor Preliminary specification 2000 Aug 04 Philips Semiconductors Preliminary specification UHF power LDMOS transistor BLF861A PINNING - SOT540A FEATURES • High power gain PIN DESCRIPTION

Contextual Info: T O SH IB A TD62591 ~594AP,595~598AP/AF TOSHIBA BIPOLAR DIGITAL INTEGRATED CIRCUIT SILICON MONOLITHIC TD62591AP, TD62592AP, TD62593AP, TD62594AP TD62595AP, TD62595AF, TD62596AP, TD62596AF TD62597AP, TD62597AF. TD62598AP. TD62598AF 8CH SINGLE DRIVER The TD62591AP, TD62591AF Series are comprised of eight

F. S. TSAI

Abstract: GSC2146 6d36
Contextual Info: ISSUED DATE :2006/04/10 REVISED DATE : GSC2146 6 0 0 m A C M O S P o s i t i v e Vo l t a g e R e g u l a t o r Description The GSC2146 series of positive, linear regulators feature low quiescent current 30 A typ. with low dropout voltage, making them ideal for battery applications. The space-saving SOP-8 package is attractive for “Pocket”

6F302

Abstract: 6F152 6F37 6F342 6f362 F. S. TSAI GSC2166 6F33
Contextual Info: ISSUED DATE :2006/04/10 REVISED DATE : GSC2166 6 0 0 m A C M O S P o s i t i v e Vo l t a g e R e g u l a t o r Description The GSC2166 series of positive, linear regulators feature low quiescent current 30 A typ. with low dropout voltage, making them ideal for battery applications. The space-saving SOP-8 package is attractive for “Pocket”

G5U2189

Contextual Info: ISSUED DATE :2006/04/14 REVISED DATE : G5U2189 1 . 5 5 A C M O S L o w D r o p o u t Vo l t a g e R e g u l a t o r Description The G5U2189 of positive, linear regulators feature low ground current 45 A typ. with low dropout voltage, making them ideal for battery applications.

GSC2139

Abstract: transistor 7686
Contextual Info: ISSUED DATE :2006/04/14 REVISED DATE : GSC2139 1 . 5 5 A C M O S L o w D r o p o u t Vo l t a g e R e g u l a t o r Description The GSC2139 of positive, linear regulators feature low ground current 45 A typ. with low dropout voltage, making them ideal for battery applications.

GSC2119

Contextual Info: ISSUED DATE :2006/04/14 REVISED DATE : G S C 2 11 9 1 . 5 5 A C M O S L o w D r o p o u t Vo l t a g e R e g u l a t o r Description The GSC2119 of positive, linear regulators feature low ground current 45 A typ. with low dropout voltage, making them ideal for battery applications.

NE24600

Abstract: NE24620 2SC2952 2SC2953 NE24615
Contextual Info: SEC N E C / CALIFORNIA SbE D Li4274m 00G237S Tbl « N E C C " 1 7 3 5 -0 5 NE24600 NE24615 NE24620 NPN MEDIUM POWER MICROWAVE TRANSISTOR FEATURES DESCRIPTION AND APPLICATIONS • E X C E L L E N T IM DISTO RTIO N C H A R A C T E R IS T IC S A T HIG H O U T P U T LEV E LS :

G5U2187

Abstract: 1117 S Transistor adj 939
Contextual Info: ISSUED DATE :2006/04/12 REVISED DATE : G5U2187 7 5 0 m A C M O S P o s i t i v e Vo l t a g e R e g u l a t o r Description The G5U2187 of positive, linear regulators feature low quiescent current 45 A typ. with low dropout voltage, making then ideal for battery applications.

1117 S Transistor adj 939

Abstract: G5J2187 ta 358
Contextual Info: ISSUED DATE :2006/04/12 REVISED DATE : G5J2187 7 5 0 m A C M O S P o s i t i v e Vo l t a g e R e g u l a t o r Description The G5J2187 of positive, linear regulators feature low quiescent current 45 A typ. with low dropout voltage, making then ideal for battery applications.

GSC2117

Abstract: TC 4863 1117 S Transistor adj 939 TC 4863 DB
Contextual Info: ISSUED DATE :2006/04/12 REVISED DATE : G S C 2 11 7 7 5 0 m A C M O S P o s i t i v e Vo l t a g e R e g u l a t o r Description The GSC2117 of positive, linear regulators feature low quiescent current 45 A typ. with low dropout voltage, making then ideal for battery applications.