TRANSISTOR SS 110 Search Results

BFY64

Abstract: bfx64
Contextual Info: SGS-THOMSON B FY 64 R!tlD EæilLI(g'iri iD(SS HIG H-CURRENT GENERAL PURPOSE TRANSISTOR D E S C R IP T IO N The BFX64 is a silicon planar epitaxial PNP transistor in Jedec TO-39 metal case. It is designed for digital and analog applications at current levels

2SK1356

Contextual Info: 2SK1356 FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE tzt-MOS INDUSTRIAL APPLICATIONS Unie in m m HIGH SPEED, HIGH VOLTAGE SWITCHING APPLICATIONS. SWITCHING REGULATOR AND MOTOR DRIVE APPLICATIONS. £ 10.3UAJC. FEATURES: . High Breakdown Voltage : V( j r )d SS“900V

Transistor BFR 96

Abstract: 2SC 930 AF transistor 2Sc 2053 Transistor BFR34a Transistor BFr 99 BFR34A
Contextual Info: SS C D • fl235bD S QQQMb70 ÍS I E û 2 BFR34A 2 N 6620 NPN Silicon Transistor for Low-Noise RF Broadband Amplifiers ^ _ _ -/s' SIEMENS A K T I E N 6 E S E LLS CH AF BFR 34 A is an epitaxial NPN silicon planar RF transistor in a plastic package similar

marking UD

Abstract: 2SC4627
Contextual Info: Transistor 2SC4627 Silicon NPN epitaxial planer type For high-frequency amplification Unit: mm 1.6±0.15 0.4 +0.1 0.5 1 3 0.5 ● Optimum for RF amplification of FM/AM radios. High transition frequency fT. SS-Mini type package, allowing downsizing of the equipment

2SA1790

Abstract: 2SC4626
Contextual Info: Transistor 2SA1790 Silicon PNP epitaxial planer type For high-frequency amplification Complementary to 2SC4626 Unit: mm 1.6±0.15 0.8±0.1 0.4 +0.1 0.5 1 3 0.5 1.6±0.1 ● High transition frequency fT. SS-Mini type package, allowing downsizing of the equipment

2SA1790

Abstract: 2SC4626
Contextual Info: Transistor 2SA1790 Silicon PNP epitaxial planer type For high-frequency amplification Complementary to 2SC4626 Unit: mm 1.6±0.15 0.8±0.1 0.4 +0.1 0.5 1 3 0.5 1.6±0.1 ● High transition frequency fT. SS-Mini type package, allowing downsizing of the equipment

od300

Contextual Info: DATA SHEET SILICON TRANSISTOR 2SC5289 NPN SILICON EPITAXIAL TRANSISTOR FOR L-BAND LOW-POWER AMPLIFIER T he 2S C 5 2 8 9 is ideal fo r the final stag e am p lifie r in 1.9G H z-band digital cord le ss phones D EC T, PHS, etc. . PA C K A G E D R AW IN G (Unit: mm)

A71B

Abstract: b1202 pt100 multiplexer RTD Embedded Technologies sandisk ultra ii SM3000
Contextual Info: Data Sheet SS/SM3000 Issue 18 Multipoint Videographic Recorder SM3000 Large clear display – 31 cm 12.1 in. thin film transistor (TFT) color screen Unsurpassed environmental protection – hosedown to IP66 and NEMA4X standards Multiple point recording – up to 36 universal analog inputs

SS8050

Abstract: transistor TO-92 SS8050
Contextual Info: SS8050 NPN EPITAXIAL SILICON TRANSISTOR 2W OUTPUT AMPLIFIER OF PORTABLE RADIOS IN CLA SS B PUSH-PULL OPERATION. TO -92 • Complimentary to SS8550 • Collector Current lc= 1-5A • Collector Dissipation Pc =2W Tc =25°C ABSOLUTE MAXIMUM RATINGS (Ta= 25°C)

2N6849

Contextual Info: Tem ic SU.CO-X_2N6849 P-Channel Enhancement-Mode Transistor Product Summary V BR I)SS (V) r DS(on) (Q ) ID (A) -100 0.30 -6 .5 Parametric limits in accordance with MIL-S-19500/564 where applicable. TO-205AF (TO-39) r O — —if-

2SC4655

Contextual Info: Transistor 2SC4655 Silicon NPN epitaxial planer type For high-frequency amplification Unit: mm 1.6±0.15 0.4 +0.1 0.5 1 3 0.5 1.6±0.1 ● Optimum for RF amplification, oscillation, mixing, and IF of FM/ AM radios. SS-Mini type package, allowing downsizing of the equipment

rtd pt100 sensor thin film

Abstract: EM60068-2 abb sm2000 SIMPLE DOOR ALARM SYSTEM free Password based door locking system pt100 multiplexer sandisk ultra ii sandisk usb flash drive 16 gb sm2000 B12156
Contextual Info: Data Sheet SS/SM2000 Issue 20 Advanced Videographic Recorder SM2000 Bright and clear display – high contrast, thin film transistor TFT color screen Secure data recording – 8 Mb internal Flash memory for 12 recording channels and logs – no battery back-up required

2SC4655

Contextual Info: Transistor 2SC4655 Silicon NPN epitaxial planer type For high-frequency amplification Unit: mm 1.6±0.15 0.4 +0.1 0.5 1 3 0.5 1.6±0.1 ● Optimum for RF amplification, oscillation, mixing, and IF of FM/ AM radios. SS-Mini type package, allowing downsizing of the equipment

VNDQ09

Abstract: VQ1006 VQ1004
Contextual Info: JH SS& VQ1004 SERIES N-Channel Enhancement-Mode _MOS Transistor Arrays 14-PIN DIP SIDEBRAZE PRODUCT SUMMARY TOP VIEW PART NUMBER V BR DSS (V) VQ1004 60 VQ1006 90 T •d (A) PACKAGE 3.5 0.46 All 3.5 0.40 All Dual-ln-Une Package D1 [ 7 m] D4

2SA1790

Abstract: 2SC4626
Contextual Info: Transistor 2SC4626 Silicon NPN epitaxial planer type For high-frequency amplification Complementary to 2SA1790 Unit: mm 1.6±0.15 0.4 +0.1 0.5 1 3 0.5 ● Optimum for RF amplification of FM/AM radios. High transition frequency fT. SS-Mini type package, allowing downsizing of the equipment

BUZ80AF

Abstract: BUZ80A BUZ80AFI
Contextual Info: BUZ80A BUZ80AFI SGS-THOMSON Z T ê N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR TYPE V d ss FtDS on Id BUZ80A 800 V 3 Ü 3.8 A BUZ80AFI 800 V 3 Li 2.4 A . . . . . . AVALANCHE RUGGEDNESS TECHNOLOGY 100% AVALANCHE TESTED REPETITIVE AVALANCHE DATA AT 100°C

2SA1790

Abstract: 2SC4626
Contextual Info: Transistor 2SC4626 Silicon NPN epitaxial planer type For high-frequency amplification Complementary to 2SA1790 Unit: mm 1.6±0.15 0.4 +0.1 0.5 1 3 0.5 ● Optimum for RF amplification of FM/AM radios. High transition frequency fT. SS-Mini type package, allowing downsizing of the equipment

marking "BSs"

Contextual Info: BSS 110 SIPMOS Small-Signal Transistor • P channel • Enhancement mode • Logic Level • VGS th = -0.8.-2.0 V Pin 1 Pin 2 S Pin 3 G Type VDS ID RDS(on) Package Marking BSS 110 -50 V -0.17 A 10 Ω TO-92 SS 110 Type BSS 110 BSS 110 BSS 110 Ordering Code

Contextual Info: STP16N10L N - CHANNEL 100V - 0.14 i l - 16A - TO-220 POWER MOS TRANSISTOR TYPE V S TP16N 10L . . . . . . . . R d ss 100 V d Id S o ii < 0 .1 6 a 16 A TYPICAL RDS(on) = 0.14 £2 AVALANCHE RUGGED TECHNOLOGY 100% AVALANCHE TESTED REPETITIVE AVALANCHE DATA AT 100°C

Contextual Info: 3ÜE ]> • 7 T 2 C1237 DG3Q7S2 b ■ _ - 15 r z 7 SCS-THOMSON Ä 7# — IRFK6H450 ~"s T T ^ thomsÖiT - N - CHANNEL ENHANCEMENT MODE _ POWER MOS TRANSISTOR MODULE ADVANCE DATA TYPE V d ss IRFK6H450 500 V RDS on Id 0.067 n 66 A . . . . HIGH CURRENT POWER MODULE

Contextual Info: ¿7/ STB30N10 N - CHANNEL 100V - 0.06Î2 - 30A - D2PAK POWER MOS TRANSISTOR TYPE V STB30N10 d ss 100 V R d S o ii < 0 .0 7 a Id 30 A TYPICAL R D S (on) = 0.06 AVALANCHE RUGGED TECHNOLOGY 100% AVALANCHE TESTED REPETITIVE AVALANCHE DATA AT 100°C LOW GATE CHARGE

Contextual Info: 45E J> m TGTVESQ IT0S4 0017fl3D 2 2SJ115 "T-sq-z-i> TOSHIBA FIELD EFFECT TRANSISTOR SILICON P CHANNEL MOS TYPE TOSHIBA DISCRETE/OPTO Unit in mm AU DI O FREQUENCY POWER AM PL IF IE R APPLICATION. 0 3 .2 t a g 1S9MAX. FEATURES: . High Breakdown Voltage : V[)SS = ~160V

Contextual Info: SIPMOS Small-Signal Transistor • N channel • Enhancement mode • Logic Level *^GS .h = 0.8.2.0V Type ^DS BSS 295 50 V Type BSS 295 BSS 295 Ordering Code Q67000-S238 Q67000-S105 1.4 A f fDS(on) Package Marking 0.3 Q TO-92 SS 295 Tape and Reel Information

transistor l1w

Abstract: s217 diode
Contextual Info: BSS 296 SIPMOS Small-Signal Transistor • N channel • Enhancement mode • Logic Level • VGS th = 0.8.2.0V Pin 1 Pin 2 G Pin 3 D Type VDS ID RDS(on) Package Marking BSS 296 100 V 0.8 A 0.8 Ω TO-92 SS 296 Type BSS 296 Ordering Code Q62702-S217