TRANSISTOR SMD ND 16 Search Results

capacitor 10uF/63V

Abstract: capacitor 220uF/63V J152 100 pf, ATC Chip Capacitor pF CAPACITOR 100v 100b*500x 10uf 63v capacitor capacitor 1206 63V ID Innovations resistor smd 1206 102
Contextual Info: The innovative Semiconductor Company! HVV0912-150 HIGH VOLTAGE, HIGH RUGGEDNESS L-Band Avionics Pulsed Power Transistor 960-1215 MHz, 10µs Pulse, 10% Duty Cycle For Ground and Air DME, TCAS and IFF Applications TM FEATURES • Silicon MOSFET Technology • Operation from 24V to 50V

R/transistor smd r21

Contextual Info: Application Note 1607 ISL8120EVAL4Z Evaluation Board Setup Procedure FIGURE 1. ISL8120EVAL4Z EVALUATION BOARD The ISL8120 integrates two voltage-mode synchronous buck PWM controllers. It can be used either for dual independent outputs or a 2-phase single-output regulator.

Contextual Info: DB-54008L-175 RF POWER Amplifier using 1 x PD54008L N-Channel Enhancement-Mode Lateral MOSFETs General feature • Excellent Thermal Stability ■ Frequency: 135 - 175 MHz ■ Supply Voltage: 7.2V ■ Output Power: 8W ■ Power Gain: 16.2 ± 1.7dB ■ Efficiency: 56% - 57%

smd code ND e3

Contextual Info: PD55035 PD55035S RF POWER TRANSISTORS The LdmoST Plastic FAMILY PRELIMINARY DATA N-CHANNEL ENHANCEMENT-MODE LATERAL MOSFETs • EXCELLENT THERMAL STABILITY • COMMON SOURCE CONFIGURATION • POUT = 35 W with 16.9 dB gain @ 500 MHz / 12.5 V • NEW RF PLASTIC PACKAGE

smd code ND e3

Contextual Info: PD55035 PD55035S RF POWER TRANSISTORS The LdmoST Plastic FAMILY PRELIMINARY DATA N-CHANNEL ENHANCEMENT-MODE LATERAL MOSFETs • EXCELLENT THERMAL STABILITY • COMMON SOURCE CONFIGURATION • POUT = 35 W with 16.9 dB gain @ 500 MHz / 12.5 V • NEW RF PLASTIC PACKAGE

S12237-02P

Contextual Info: NEWS 01 2013 ELECTRON TUBE PRODUCTS PAGE 21 From Macro to Micro OPTO-SEMICONDUCTOR PRODUCTS Photo ICs for MOST 150 Optical Link PAGE 16 ELECTRON TUBE PRODUCTS Compact 2 W Xenon Flash Lamp Modules PAGE 25 SYSTEMS PRODUCTS Digital Camera ORCA-Flash4.0 PAGE 36

smd zener diode code 20w

Abstract: DB-900-100W ceramic capacitor 100nF 50 63v rf amplifier 100w capacitor 100nf 63v PD57060s zener 20w smd diode 1w ATC100B capacitor smd gp 542
Contextual Info: DB-900-100W 100W / 26V / 869-894 MHz PA using 2x PD57060S The LdmoST FAMILY PRELIMINARY DATA RF POWER AMPLIFIER DEMOBOARD USING TWO N-CHANNEL ENHANCEMENT-MODE LATERAL MOSFETs • EXCELLENT THERMAL STABILITY • COMMON SOURCE CONFIGURATION • POUT = 100 W min. with 13 dB gain over

smd zener diode code 20w

Abstract: rf power amplifier 100w zener 20w smd diode 1w capacitor 100nf 63v PD57060s rf amplifier 100w smd code ND ATC100B DB-900-100W XPD57060S
Contextual Info: DB-900-100W RF POWER AMPLIFIER using 2 x PD57060S The LdmoST FAMILY PRELIMINARY DATA RF POWER AMPLIFIER DEMOBOARD USING TWO N-CHANNEL ENHANCEMENT-MODE LATERAL MOSFETs • EXCELLENT THERMAL STABILITY • COMMON SOURCE CONFIGURATION • POUT = 100 W min. with 13 dB gain over

Z9 TRANSISTOR SMD

Abstract: arco 406 6 pin TRANSISTOR SMD Z8
Contextual Info: PD55035 PD55035S RF POWER TRANSISTORS The LdmoST Plastic FAMILY PRELIMINARY DATA N-CHANNEL ENHANCEMENT-MODE LATERAL MOSFETs • EXCELLENT THERMAL STABILITY • COMMON SOURCE CONFIGURATION • POUT = 35 W with 16.9 dB gain @ 500 MHz / 12.5 V • NEW RF PLASTIC PACKAGE

smd transistor 647

Abstract: smd transistor 2x smd zener diode code 20w TRANSISTOR SMD 2X SMD Transistor 30w TRANSISTOR SMD 2x 6 R222.900.100W
Contextual Info: DB-900-100W 100W / 26V / 869-894 MHz PA using 2x PD57060S The LdmoST FAMILY PRELIMINARY DATA RF POWER AMPLIFIER DEMOBOARD USING TWO N-CHANNEL ENHANCEMENT-MODE LATERAL MOSFETs • EXCELLENT THERMAL STABILITY • COMMON SOURCE CONFIGURATION • POUT = 100 W min. with 13 dB gain over

PD550

Abstract: arco 406 transistor SMD 520
Contextual Info: PD55035 PD55035S RF POWER TRANSISTORS The LdmoST Plastic FAMILY PRELIMINARY DATA N-CHANNEL ENHANCEMENT-MODE LATERAL MOSFETs • EXCELLENT THERMAL STABILITY • COMMON SOURCE CONFIGURATION • POUT = 35 W with 16.9 dB gain @ 500 MHz / 12.5 V • NEW RF PLASTIC PACKAGE

anaren 1304

Abstract: ATC100B 4.7pf W50 SMD PD57045S ATC100B DB-900-80W zener diode 5v PD57045 10k potentiometer 1206 smd resistor transistor smd code 404
Contextual Info: DB-900-80W 80W / 26V / 869-894 MHz PA using 2x PD57045S The LdmoST FAMILY PRELIMINARY DATA RF POWER AMPLIFIER DEMOBOARD USING TWO N-CHANNEL ENHANCEMENT-MODE LATERAL MOSFETs • EXCELLENT THERMAL STABILITY • COMMON SOURCE CONFIGURATION • POUT = 80 W min. with 13 dB gain over

226 smd capacitor

Abstract: transistor smd code 404
Contextual Info: DB-900-80W 80W / 26V / 869-894 MHz PA using 2x PD57045S The LdmoST FAMILY PRELIMINARY DATA RF POWER AMPLIFIER DEMOBOARD USING TWO N-CHANNEL ENHANCEMENT-MODE LATERAL MOSFETs • EXCELLENT THERMAL STABILITY • COMMON SOURCE CONFIGURATION • POUT = 80 W min. with 13 dB gain over

transistor smd nd 16

Abstract: PD57045S ATC100B DB-900-80W 1uf 500v capacitor xinger 226 smd capacitor transistor smd code 404
Contextual Info: DB-900-80W RF POWER AMPLIFIER using 2 x PD57045S The LdmoST FAMILY PRELIMINARY DATA RF POWER AMPLIFIER DEMOBOARD USING TWO N-CHANNEL ENHANCEMENT-MODE LATERAL MOSFETs • EXCELLENT THERMAL STABILITY • COMMON SOURCE CONFIGURATION • POUT = 80 W min. with 13 dB gain over

capacitor 100pf

Contextual Info: DB-900-100W RF POWER AMPLIFIER using 2 x PD57060S The LdmosST FAMILY PRELIMINARY DATA N-CHANNEL ENHANCEMENT-MODE LATERAL MOSFETs • EXCELLENT THERMAL STABILITY • COMMON SOURCE CONFIGURATION • POUT = 100 W min. with 13 dB gain over 869-894 MHz • 10:1 LOAD VSWR CAPABILITY

ATC100B

Abstract: capacitor 100pf ED135
Contextual Info: DB-900-80W RF POWER AMPLIFIER using 2 x PD57045S The LdmosST FAMILY PRELIMINARY DATA N-CHANNEL ENHANCEMENT-MODE LATERAL MOSFETs • EXCELLENT THERMAL STABILITY • COMMON SOURCE CONFIGURATION • POUT = 80 W min. with 13 dB gain over 869-894 MHz • 10:1 LOAD VSWR CAPABILITY

A21 SMD transistor

Abstract: SMD transistor A24 variable resistor 10w SMD Transistor p37 transistor SMD p02 transistor SMD p04 293D106X9010A transistor P36 smd plc transceiver 600W TVS 33V BI-DIR
Contextual Info: CY3275 Cypress Low Voltage Programmable Powerline Communication Development Kit Guide Doc. # 001-53657 Rev. *B Cypress Semiconductor 198 Champion Court San Jose, CA 95134-1709 Phone USA : 800.858.1810 Phone (Intnl): 408.943.2600 http://www.cypress.com [+] Feedback

Contextual Info: PD55035-E PD55035S-E RF POWER transistor, LdmoST plastic family N-channel enhancement-mode, lateral MOSFETs Features • Excellent thermal stability ■ Common source configuration ■ POUT = 35 W with 16.9dB gain @ 500 MHz / 12.5 V ■ New RF plastic package

PD55035-E

Abstract: PD55035 PD55035S ST AN1294 PD55035S PD55035S-E PD55035STR-E PD55035TR-E C1162
Contextual Info: PD55035-E PD55035S-E RF POWER transistor, LDMOST plastic family N-Channel enhancement-mode lateral MOSFETs General features • Excellent thermal stability ■ Common source configuration ■ POUT = 35W with 16.9dB gain @ 500MHz / 12.5V ■ New RF plastic package

AN1294

Abstract: J-STD-020B PD55035-E PD55035S-E PD55035STR-E PD55035TR-E
Contextual Info: PD55035-E PD55035S-E RF POWER transistor, LdmoST plastic family N-channel enhancement-mode, lateral MOSFETs Features • Excellent thermal stability ■ Common source configuration ■ POUT = 35 W with 16.9dB gain @ 500 MHz / 12.5 V ■ New RF plastic package

Contextual Info: Philips Semiconductors Product specification T renchMOS transistor Standard level FET GENERAL DESCRIPTION N-channel enhancement mode standard level fleld-effect power transistor In a plastic envelope suitable for surface mounting. Using ’trench’ technology the device

capacitor 47pf

Abstract: SMD Transistor w30
Contextual Info: DB-900-60W 60W / 26V / 869-894 MHz using 1x PD57070S The LdmoST FAMILY General Features • EXCELLENT THERMAL STABILITY ■ COMMON SOURCE CONFIGURATION ■ POUT = 60W WITH 13 dB GAIN OVER 869 894 MHz ■ 10:1 LOAD VSWR CAPABILITY ■ BeO FREE AMPLIFIER Description

DB-55008L-470

Abstract: EXCELDRC35C GRM42-6C0G102J50 PD55008L PD55008L-E
Contextual Info: DB-55008L-470 Evaluation board using PD55008L-E for UHF mobile radio Features • Excellent thermal stability ■ Frequency: 400 - 470 MHz ■ Supply voltage: 12.5 V ■ Output power: 8 W ■ Power gain: 16.7 ± 2.0 dB ■ Efficiency: 49 % - 61 % ■ Load mismatch: 20:1

TRANSISTOR SMD MARKING CODE XI

Abstract: 2l TRANSISTOR SMD MARKING CODE 4728 stepper 434 TRANSISTOR SMD MARKING CODE 352 Lxx 05 smd TRANSISTOR SMD MARKING CODE 7A IED01890 IEP01211 IET01883
Contextual Info: SIEM EN S 2-Phase Stepper-Motor Driver TLE 4728 G Overview Bipolar-IC Features • 2 x 0.7 amp. full bridge outputs • Integrated driver, control logic and current control chopper • Fast free-wheeling diodes • Max. supply voltage 45 V • Output stages are free of crossover current