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    TRANSISTOR SMD MARKING CODE WS Search Results

    TRANSISTOR SMD MARKING CODE WS Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    5446/BEA
    		Rochester Electronics LLC 5446 - Decoder, BCD-To-7-Segment, With Open-Collector Outputs - Dual marked (M38510/01006BEA) PDF Buy
    54LS190/BEA
    		Rochester Electronics LLC 54LS190 - BCD Counter, 4-Bit Synchronous Up/Down, With Mode Control - Dual marked (M38510/31513BEA) PDF Buy
    5962-8672601EA
    		Rochester Electronics LLC Parity Generator/Checker, S Series, 12-Bit, Inverted Output, TTL - Dual marked (93S48/BEA) PDF Buy
    54F151/BEA
    		Rochester Electronics LLC 54F151 - Multiplexer, 1-Func, 8 Line Input, TTL, CDIP16 - Dual marked (M38510/33901BEA) PDF Buy
    54F151/B2A
    		Rochester Electronics LLC 54F151 - Multiplexer, 1-Func, 8 Line Input, TTL, CQCC20 - Dual marked (M38510/33901B2A) PDF Buy

    TRANSISTOR SMD MARKING CODE WS Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    murata REEL label lot number

    Abstract: TRANSISTOR SMD MARKING CODE WS ROHM polystyrene capacitor IPC-7711 ws1101 smd transistor marking da A423801A 23801A J-STD-020B J-STD-033
    Contextual Info: !" PRELIMINARY DATASHEET WS1101 Power Amplifier Module for CDMA/AMPS 824-849MHz DATASHEET (DEVICE : WS1101, 3x3 CDMA/AMPS PAM) Issued Date : January 29 , 2005 S. W. Paek Director, Module Group 1 Preliminary Information WM0501-11 !" PRODUCT DESCRIPTION WS1101


    Original     		WS1101 824-849MHz) WS1101, WM0501-11 WS1101 824-849MHz murata REEL label lot number TRANSISTOR SMD MARKING CODE WS ROHM polystyrene capacitor IPC-7711 smd transistor marking da A423801A 23801A J-STD-020B J-STD-033 PDF

    smd code marking NEC

    Abstract: TRANSISTOR SMD CODE PACKAGE SOT89 52 10A 38w smd transistor smd mark code 38w SMD 8PIN IC MARKING CODE 251 marking code E1 SMD 5pin 6pin dip SMD mosfet MARKING code T mosfet SMD CODE PACKAGE SOT89 52 10A marking code E2 p SMD Transistor TRANSISTOR SMD MARKING CODE MP
    Contextual Info: Power Management Devices Selection Guide > Power MOSFETs > ESD Protection Diodes > Regulators August 2008 www.am.necel.com/powermanagement TABLE OF CONTENTS Contents Low-Voltage Power By Part


    Original     		G18756EU3V0SG00 smd code marking NEC TRANSISTOR SMD CODE PACKAGE SOT89 52 10A 38w smd transistor smd mark code 38w SMD 8PIN IC MARKING CODE 251 marking code E1 SMD 5pin 6pin dip SMD mosfet MARKING code T mosfet SMD CODE PACKAGE SOT89 52 10A marking code E2 p SMD Transistor TRANSISTOR SMD MARKING CODE MP PDF

    smd transistor HX

    Abstract: TRANSISTOR SMD MARKING CODE TK TRANSISTOR SMD MARKING CODE MP smd transistor HX 45 cdp68hc68 hc221 TRANSISTOR SMD MARKING CODE WM intersil standard part marking HIP SMD TRANSISTOR MARKING by 4p TRANSISTOR SMD MARKING CODES
    Contextual Info: Ordering Nomenclature Guides 2 2-3 Elantec TYPES . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2-4 5962 SMD/DSCC - QML TYPES. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .


    Original     		82CXXX -25oC -40oC -55oC 125oC JM38510/ 1-888-INTERSIL smd transistor HX TRANSISTOR SMD MARKING CODE TK TRANSISTOR SMD MARKING CODE MP smd transistor HX 45 cdp68hc68 hc221 TRANSISTOR SMD MARKING CODE WM intersil standard part marking HIP SMD TRANSISTOR MARKING by 4p TRANSISTOR SMD MARKING CODES PDF

    ujt 2646

    Abstract: TRANSISTOR J 5804 label infineon barcode msc 1697 MSC 1697 IC pin diagram Rohde und Schwarz Active Antenna HE 011 cd 6283 audio smd transistor v75 log tx2 0909 IC data book free download
    Contextual Info: D a t a B o o k , J a n. 20 0 1 GaAs Components N e v e r s t o p t h i n k i n g . Edition 2001-01-01 Published by Infineon Technologies AG, St.-Martin-Strasse 53, D-81541 München, Germany Infineon Technologies AG 2001. All Rights Reserved. Attention please!


    Original     		D-81541 14-077S Q62702-D1353 Q62702-G172 Q62702-G173 ujt 2646 TRANSISTOR J 5804 label infineon barcode msc 1697 MSC 1697 IC pin diagram Rohde und Schwarz Active Antenna HE 011 cd 6283 audio smd transistor v75 log tx2 0909 IC data book free download PDF

    Ericsson Installation guide for RBS 6000

    Abstract: ericsson RBS 6000 series INSTALLATION MANUAL Philips Twin Eye PLN 2032 ERICSSON RBS 6000 Ericsson RBS 6000 hardware manual ericsson RBS 3206 dil relay 349-383 IGBT semikron 613 GB 123 CT ericsson RBS 6000 series Z0765A08PSC
    Contextual Info: Discontinued and Superseded Stock Number History. This document contains Discontinued and Superseded Stock Number History. The information is listed in the following format: Stock Number: The original RS Stock Number of the item. Brief Description: The Invoice Description of the item.


    Original     		304X264X130 CL200 TC554001FI-85L TC554001FTL-70 BMSKTOPAS900 BMSKTOPAS870 10/100TX 13X76 35X100 19X89 Ericsson Installation guide for RBS 6000 ericsson RBS 6000 series INSTALLATION MANUAL Philips Twin Eye PLN 2032 ERICSSON RBS 6000 Ericsson RBS 6000 hardware manual ericsson RBS 3206 dil relay 349-383 IGBT semikron 613 GB 123 CT ericsson RBS 6000 series Z0765A08PSC PDF

    06N60

    Abstract: Q67040-S4629 SPP06N60C3 06N60C3 smd transistor marking G12
    Contextual Info: SPP06N60C3 CoolMOS TM Power Transistor Product Summary Features • New revolutionary high voltage technology • Ultra low gate charge V DS @ T j,max 650 V R DS on ,max 0.75 Ω ID 6.2 A • Periodic avalanche rated • High peak current capability • Ultra low effective capacitances


    Original     		SPP06N60C3 PG-TO220 Q67040-S4629 06N60C3 06N60 Q67040-S4629 SPP06N60C3 06N60C3 smd transistor marking G12 PDF

    06N60

    Abstract: SPD06N60C3 SMD TRANSISTOR MARKING code DD infineon marking TO-252 06N60C3 Q67040-S4630 TRANSISTOR SMD MARKING CODE G12
    Contextual Info: SPD06N60C3 CoolMOS TM Power Transistor Product Summary Features • New revolutionary high voltage technology • Ultra low gate charge V DS @ T j,max 650 V R DS on ,max 0.75 Ω ID 6.2 A • Periodic avalanche rated • High peak current capability • Ultra low effective capacitances


    Original     		SPD06N60C3 PG-TO252 Q67040-S4630 06N60C3 06N60 SPD06N60C3 SMD TRANSISTOR MARKING code DD infineon marking TO-252 06N60C3 Q67040-S4630 TRANSISTOR SMD MARKING CODE G12 PDF

    SMD Transistor g25

    Abstract: g25 SMD Transistor SP*02N60 02N60C3 SPN02N60C3 DF marking code smd transistor 02n60
    Contextual Info: SPN02N60C3 CoolMOSTM Power Transistor Product Summary Features • New revolutionary high voltage technology • Ultra low gate charge V DS @ T j,max 650 V R DS on ,max 2.5 Ω ID 0.4 A • Ultra low effective capacitances • Extreme dv /dt rated SOT223 Type


    Original     		SPN02N60C3 OT223 Q67040-S4553 02N60C3 SMD Transistor g25 g25 SMD Transistor SP*02N60 02N60C3 SPN02N60C3 DF marking code smd transistor 02n60 PDF

    SMD transistor MARKING CODE wsr

    Contextual Info: That H E W L E T T m iltim P A C K A R D Dual Channel Line R eceiver H erm etic Optocoupler Technical Data HCPL-1930 HCPL-1931 HCPL-193K 5962-89572 Features Applications D escription • Dual Marked w ith Device Part Number and DSCC Standard Microcircuit Drawing


    OCR Scan     		HCPL-1930 HCPL-1931 HCPL-193K MIL-PRF-38534 QML-38534, 16-pin MIL-PRF-38534. SMD transistor MARKING CODE wsr PDF

    03N60S5

    Abstract: Q67040-S4184 SPP03N60S5
    Contextual Info: SPP03N60S5 Cool MOS Power Transistor Feature • New revolutionary high voltage technology • Ultra low gate charge VDS 600 V RDS on 1.4 Ω ID 3.2 A PG-TO220 • Periodic avalanche rated • Extreme dv/dt rated 2 • Ultra low effective capacitances


    Original     		SPP03N60S5 PG-TO220 P-TO220-3-1 Q67040-S4184 03N60S5 03N60S5 Q67040-S4184 SPP03N60S5 PDF

    isl 6251 schematic

    Abstract: smd transistor A4S Siemens OFW 361 smd marking b4h 6Bs smd transistor NPN TRANSISTORS LIST ACCORDING TO CURRENT, VOLTAG Transistors Diodes smd A7H a4s smd transistor npn transistor ss100 smd transistor 6Bs
    Contextual Info: SIEMENS Halbleiter-Datenblätter Im Produktbereich „Halbleiter“ konnten uns leider von SIEMENS nicht alle Daten rechtzeitig zur Verfügung gestellt werden. Wir werden uns bemühen, die Auswahl an Datenblättern dieses Bereichs für die nächste Ausgabe dieser CD zu vervollständigen.


    Original     		Q62702-A772 Q62702-A731 Q62702-A773 OT-23 isl 6251 schematic smd transistor A4S Siemens OFW 361 smd marking b4h 6Bs smd transistor NPN TRANSISTORS LIST ACCORDING TO CURRENT, VOLTAG Transistors Diodes smd A7H a4s smd transistor npn transistor ss100 smd transistor 6Bs PDF

    06n80c3

    Abstract: PG-TO252-3-11 TRANSISTOR SMD MARKING CODE 2A SPD06N80C3 Q67040-S4352 TRANSISTOR SMD MARKING CODE WS
    Contextual Info: SPD06N80C3 Cool MOS Power Transistor Feature • New revolutionary high voltage technology • Worldwide best RDS on in TO252 VDS 800 V RDS(on) 0.9 Ω ID 6 A PG-TO252 • Ultra low gate charge • Periodic avalanche rated • Extreme dv/dt rated Type


    Original     		SPD06N80C3 PG-TO252 Q67040-S4352 06N80C3 PG-TO252-3-1, PG-TO252-3-11, 06n80c3 PG-TO252-3-11 TRANSISTOR SMD MARKING CODE 2A SPD06N80C3 Q67040-S4352 TRANSISTOR SMD MARKING CODE WS PDF

    07N60S5

    Contextual Info: SPU07N60S5 SPD07N60S5 Cool MOS Power Transistor Feature • New revolutionary high voltage technology • Worldwide best RDS on in TO-251 and TO-252 VDS 600 V RDS(on) 0.6 Ω ID 7.3 A PG-TO252 • Ultra low gate charge • Periodic avalanche rated PG-TO251


    Original     		SPU07N60S5 SPD07N60S5 O-251 O-252 PG-TO252 PG-TO251 SPD07N60S5 PG-TO251 07N60S5 PDF

    02n60s5

    Abstract: Transistor 02N60S5 02N60 Q67040-S4212 SPB02N60S5 SPP02N60S5 P-TO263-3-2 Q67040-S4181
    Contextual Info: SPP02N60S5 SPB02N60S5 Cool MOS Power Transistor Feature • New revolutionary high voltage technology • Ultra low gate charge VDS 600 V RDS on 3 Ω ID 1.8 A P-TO263-3-2 • Periodic avalanche rated P-TO220-3-1 • Extreme dv/dt rated 2 • Ultra low effective capacitances


    Original     		SPP02N60S5 SPB02N60S5 P-TO263-3-2 P-TO220-3-1 Q67040-S4181 02N60S5 02n60s5 Transistor 02N60S5 02N60 Q67040-S4212 SPB02N60S5 SPP02N60S5 P-TO263-3-2 Q67040-S4181 PDF

    01N60

    Abstract: 01n60c3 P-TO251-3-1 603 marking to252 P-TO252 Q67040-S4188 Q67040-S4193 SPD01N60C3 SPU01N60C3 01N6
    Contextual Info: SPU01N60C3 SPD01N60C3 Rev. 2.0 Cool MOS Power Transistor Feature VDS @ Tjmax 650 V RDS on 6 Ω ID 0.8 A • New revolutionary high voltage technology • Ultra low gate charge P-TO252 • Periodic avalanche rated P-TO251-3-1 • Extreme dv/dt rated • Ultra low effective capacitances


    Original     		SPU01N60C3 SPD01N60C3 P-TO252 P-TO251-3-1 Q67040-S4193 01N60C3 01N60 01n60c3 P-TO251-3-1 603 marking to252 P-TO252 Q67040-S4188 Q67040-S4193 SPD01N60C3 SPU01N60C3 01N6 PDF

    Photo diode TFK S 186 P

    Abstract: IR diodes TFK S 186 P TFK S153P TFK BPW 41 N IR diode TFK 186 TFK BPW 20 TFK S 186 P monocrystalline solar cell power crest audio pro 8200 GERMANIUM phototransistor
    Contextual Info: Infrared Emitters and Detectors Data Book 1997 Contents General Information . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Alphanumeric Index . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .


    Original     		PDF

    20n60s5

    Abstract: 20n60s transistor 20N60s5 20n60 20n60s5 datasheet Q67040-S4751 SPP20N60S5 SPB20N60S5
    Contextual Info: SPP20N60S5 SPB20N60S5 Cool MOS Power Transistor Feature • New revolutionary high voltage technology • Worldwide best RDS on in TO 220 VDS 600 V RDS(on) 0.19 Ω ID 20 A P-TO263-3-2 • Ultra low gate charge P-TO220-3-1 • Periodic avalanche rated


    Original     		SPP20N60S5 SPB20N60S5 P-TO263-3-2 P-TO220-3-1 Q67040-S4751 20N60S5 20n60s5 20n60s transistor 20N60s5 20n60 20n60s5 datasheet Q67040-S4751 SPP20N60S5 SPB20N60S5 PDF

    04N80C3

    Abstract: PG-TO252-3-11 Q47040-S4563 SPD04N80C3 INFINEON marking
    Contextual Info: SPD04N80C3 Cool MOS Power Transistor Feature • New revolutionary high voltage technology • Ultra low gate charge VDS 800 V RDS on 1.3 Ω ID 4 A PG-TO252 • Periodic avalanche rated • Extreme dv/dt rated • Ultra low effective capacitances • Improved transconductance


    Original     		SPD04N80C3 PG-TO252 Q47040-S4563 04N80C3 04N80C3 PG-TO252-3-11 Q47040-S4563 SPD04N80C3 INFINEON marking PDF

    04n60s5

    Abstract: SPB04N60S5 SPP04N60S5 04N60S 04n60
    Contextual Info: SPP04N60S5 SPB04N60S5 Cool MOS Power Transistor Feature • New revolutionary high voltage technology • Ultra low gate charge VDS 600 V RDS on 0.95 Ω ID 4.5 A P-TO263-3-2 • Periodic avalanche rated P-TO220-3-1 • Extreme dv/dt rated 2 • Ultra low effective capacitances


    Original     		SPP04N60S5 SPB04N60S5 P-TO263-3-2 P-TO220-3-1 Q67040-S4200 04N60S5 04n60s5 SPB04N60S5 SPP04N60S5 04N60S 04n60 PDF

    07n60s5

    Abstract: infineon 07n60s5 SPB07N60S5 SPI07N60S5 SPP07N60S5
    Contextual Info: SPP07N60S5, SPB07N60S5 SPI07N60S5 Cool MOS Power Transistor Feature • New revolutionary high voltage technology • Worldwide best RDS on in TO 220 P-TO262 • Ultra low gate charge VDS 600 V RDS(on) 0.6 Ω ID 7.3 A P-TO263-3-2 P-TO220-3-1 • Periodic avalanche rated


    Original     		SPP07N60S5, SPB07N60S5 SPI07N60S5 P-TO262 P-TO263-3-2 P-TO220-3-1 SPP07N60S5 Q67040-S4172 07n60s5 infineon 07n60s5 SPB07N60S5 SPI07N60S5 SPP07N60S5 PDF

    smd transistor marking 12W

    Abstract: smd transistor code 12w 06N80C2 TRANSISTOR SMD MARKING CODE 12w smd transistor 12W 98 P-TO252 SPD06N80C2 SMD TRANSISTOR MARKING 2c transistor SMD 12W smd 12w 98
    Contextual Info: Preliminary data SPD06N80C2 Cool MOS Power Transistor COOLMOS Power Semiconductors Feature • New revolutionary high voltage technology · Worldwide best RDS on in TO252 · Product Summary VDS 800 V Ultra low gate charge RDS(on) 900 mW · Periodic avalanche rated


    Original     		SPD06N80C2 P-TO252 Q67040-S4352 06N80C2 smd transistor marking 12W smd transistor code 12w 06N80C2 TRANSISTOR SMD MARKING CODE 12w smd transistor 12W 98 P-TO252 SPD06N80C2 SMD TRANSISTOR MARKING 2c transistor SMD 12W smd 12w 98 PDF

    TRANSISTOR 12N50C3

    Abstract: 12N50C3 SPB12N50C3 SPP12N50C3
    Contextual Info: SPB12N50C3 Cool MOS Power Transistor Feature VDS @ Tjmax 560 V RDS on 0.38 Ω ID 11.6 A • New revolutionary high voltage technology • Ultra low gate charge • Periodic avalanche rated P-TO263-3-2 • Extreme dv/dt rated • Ultra low effective capacitances


    Original     		SPB12N50C3 P-TO263-3-2 Q67040-S4641 12N50C3 TRANSISTOR 12N50C3 12N50C3 SPB12N50C3 SPP12N50C3 PDF

    12N50C3

    Abstract: SPA12N50C3 PG-TO220-3-31 SPI12N50C3 SPP12N50C3 SP000216322 INFINEON marking
    Contextual Info: SPP12N50C3 SPI12N50C3, SPA12N50C3 Cool MOS Power Transistor VDS @ Tjmax 560 V RDS on 0.38 Ω ID 11.6 A Feature • New revolutionary high voltage technology • Ultra low gate charge • Periodic avalanche rated PG-TO220-3-31 PG-TO262- PG-TO220 • Extreme dv/dt rated


    Original     		SPP12N50C3 SPI12N50C3, SPA12N50C3 PG-TO220-3-31 PG-TO262- PG-TO220 P-TO220-3-31 P-TO220-3-1 PG-TO-220-3-31: 12N50C3 SPA12N50C3 SPI12N50C3 SPP12N50C3 SP000216322 INFINEON marking PDF

    02N60C3

    Abstract: 02N60 Q67040-S4420 GPT09051 P-TO252 SPD02N60C3 SPU02N60C3 02N6
    Contextual Info: SPD02N60C3 SPU02N60C3 Final data Cool MOS Power Transistor VDS @ Tjmax 650 V RDS on 3 Ω ID 1.8 A Feature • New revolutionary high voltage technology • Ultra low gate charge • Periodic avalanche rated P-TO251 P-TO252 • Extreme dv/dt rated • Ultra low effective capacitances


    Original     		SPD02N60C3 SPU02N60C3 P-TO251 P-TO252 Q67040-S4420 02N60C3 02N60C3 02N60 Q67040-S4420 GPT09051 P-TO252 SPD02N60C3 SPU02N60C3 02N6 PDF