TRANSISTOR SMD G 28 Search Results

09N03LA

Abstract: IPS09N03LA 09N03 diode marking 321 09N03LA datasheet IPD09N03LA 09N03LA equivalent IPF09N03LA IPU09N03LA P-TO251-3-1
Contextual Info: IPD09N03LA G IPS09N03LA G OptiMOS 2 Power-Transistor IPF09N03LA G IPU09N03LA G Product Summary Features • Ideal for high-frequency dc/dc converters • Qualified according to JEDEC1 for target application V DS 25 V R DS on),max (SMD version) 8.6 mΩ ID

06n03la

Abstract: 06n03l 06N03 06n03la datasheet, download SMD BR 32 IPU06N03LA 06n03la datasheet IPS06N03LA TO252-3 IPF06N03LA
Contextual Info: OptiMOS 2 Power-Transistor IPD06N03LA G IPF06N03LA G IPS06N03LA G IPU06N03LA G Product Summary Features • Ideal for high-frequency dc/dc converters • Qualified according to JEDEC1 for target application V DS 25 V R DS on),max (SMD version) 5.7 mΩ ID

H6N03LA

Abstract: H6N03 PG-TO252-3-11 to251 IPDH6N03LA H6N03L
Contextual Info: OptiMOS 2 Power-Transistor IPDH6N03LA G IPFH6N03LA G IPSH6N03LA G IPUH6N03LA G Product Summary Features • Ideal for high-frequency dc/dc converters • Qualified according to JEDEC1 for target application V DS 25 V R DS on),max (SMD version) 6 mΩ ID

05N03LA

Abstract: 05n03 fet to251 marking CODE R SMD DIODE IPD05N03LA IPF05N03LA IPS05N03LA IPU05N03LA P-TO252-3-11 05N03L
Contextual Info: IPD05N03LA G IPS05N03LA G OptiMOS 2 Power-Transistor IPF05N03LA G IPU05N03LA G Product Summary Features • Ideal for high-frequency dc/dc converters • Qualified according to JEDEC1 for target application V DS 25 V R DS on),max (SMD version) 5.1 mΩ ID

ts 4141 TRANSISTOR smd

Abstract: CSA1162 CSA1162GR CSA1162Y equivalent transistor smd 3 em 7 MARKING SMD pnp TRANSISTOR ec
Contextual Info: Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company SOT-23 Formed SMD Package CSA1162 LOW FREQUENCY GENERAL PURPOSE AMPLIFIER TRANSISTOR P-N-P transistor Marking CSA1162Y–3E CSA1162GR G –3F Pin configuration 1 = BASE

04N03LA

Abstract: 04n03l smd marking D50 IPD04N03LA IPF04N03LA IPS04N03LA IPU04N03LA P-TO251-3-1 P-TO252-3-11 smd diode marking c3
Contextual Info: Type OptiMOS 2 Power-Transistor IPD04N03LA G IPF04N03LA G IPS04N03LA G IPU04N03LA G Product Summary Package Marking • Qualified according to JEDEC1 for target applications V DS 25 V R DS on),max (SMD version) 3.8 mΩ ID 50 A • N-channel, logic level

Contextual Info: Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company SOT-23 Formed SMD Package CSA1162 LOW FREQUENCY GENERAL PURPOSE AMPLIFIER TRANSISTOR P-N-P transistor Marking CSA1162Y–3E CSA1162GR G –3F Pin configuration 1 = BASE

smd transistor marking BL

Abstract: smd transistor marking 1E smd transistor .1G CSC2712 CSC2712BL CSC2712GR CSC2712Y ts 4141 TRANSISTOR smd transistor 1f sot-23 marking 1F SOT-23
Contextual Info: Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company SOT-23 Formed SMD Package CSC2712 SILICON PLANAR EPITAXIAL TRANSISTOR N-P-N transistor Marking CSC2712Y=1E CSC2712GR G =1F CSC2712BL(L)=1G Pin configuration 1 = BASE

ts 4141 TRANSISTOR smd

Contextual Info: Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company CSC2712 SOT-23 Formed SMD Package SILICON PLANAR EPITAXIAL TRANSISTOR N-P-N transistor Marking CSC2712Y=1E CSC2712GR G =1F CSC2712BL(L)=1G Pin configuration 1 = BASE

057N08N

Abstract: 054N08N ipp06cn08n IEC61249-2-21 PG-TO220-3 IPB054N08N3 G
Contextual Info: IPP057N08N3 G IPI057N08N3 G IPB054N08N3 G OptiMOS 3 Power-Transistor Product Summary Features • N-channel, normal level • Excellent gate charge x R DS on product (FOM) • Very low on-resistance R DS(on) V DS 80 V R DS(on),max (SMD) 5.4 mΩ ID 80 A

110N06L

Abstract: g3pf DIODE smd marking Ag PG-TO220-3 PG-TO263-3-2 MARKING G3 INFINEON SMD diode D94
Contextual Info: IPB110N06L G OptiMOS Power-Transistor IPP110N06L G Product Summary Features V DS • For fast switching converters and sync. rectification • N-channel enhancement - logic level R DS on ,max SMD version ID 60 V 11 mΩ 78 A • 175 °C operating temperature

IEC61249-2-21

Abstract: IPB085N06L PG-TO220-3 085N06L IPP085N06L
Contextual Info: IPB085N06L G OptiMOS Power-Transistor IPP085N06L G Product Summary Features V DS • For fast switching converters and sync. rectification • N-channel enhancement - logic level R DS on ,max SMD version ID 60 V 8.2 mΩ 80 A • 175 °C operating temperature

IEC61249-2-21

Abstract: PG-TO220-3 070N06L
Contextual Info: IPB070N06L G IPP070N06L G OptiMOS Power-Transistor Product Summary Features V DS • For fast switching converters and sync. rectification • N-channel enhancement - logic level R DS on ,max SMD version ID 60 V 6.7 mΩ 80 A • 175 °C operating temperature

085N06L

Abstract: IPB085N06L IPB085N06L G PG-TO220-3 smd marking g23
Contextual Info: IPB085N06L G OptiMOS Power-Transistor IPP085N06L G Product Summary Features V DS • For fast switching converters and sync. rectification • N-channel enhancement - logic level R DS on ,max SMD version ID 60 V 8.2 mΩ 80 A • 175 °C operating temperature

PG-TO220-3

Abstract: PG-TO263-3-2 IEC61249-2-21 IPP110N06L G 110N06L
Contextual Info: IPB110N06L G OptiMOS Power-Transistor IPP110N06L G Product Summary Features V DS • For fast switching converters and sync. rectification • N-channel enhancement - logic level R DS on ,max SMD version ID 60 V 11 mΩ 78 A • 175 °C operating temperature

100n08n

Abstract: IPB097N08N3 IEC61249-2-21 PG-TO220-3
Contextual Info: IPP100N08N3 G IPI100N08N3 G IPB097N08N3 G OptiMOS 3 Power-Transistor Product Summary Features • Ideal for high frequency switching and sync. rec. • Optimized technology for DC/DC converters V DS 80 V R DS on ,max (SMD) 9.7 mΩ ID 70 A • Excellent gate charge x R DS(on) product (FOM)

067N08N

Abstract: 070N08N smd marking D36 PG-TO220-3 IEC61249-2-21
Contextual Info: IPP070N08N3 G IPI070N08N3 G IPB067N08N3 G OptiMOS 3 Power-Transistor Product Summary Features • Ideal for high frequency switching and sync. rec. • Optimized technology for DC/DC converters V DS 80 V R DS on ,max (SMD) 6.7 mΩ ID 80 A • Excellent gate charge x R DS(on) product (FOM)

032N06n

Abstract: 029N06N IPI032N06N3 G IEC61249-2-21 IPP032N06N3 PG-TO220-3 IPB029N06N3 G IPP032N06N3G 032N06
Contextual Info: Type IPB029N06N3 G IPI032N06N3 G IPP032N06N3 G OptiMOS 3 Power-Transistor Product Summary Features V DS 60 V • Ideal for high frequency switching and sync. rec. R DS on ,max (SMD) 2.9 mΩ • Optimized technology for DC/DC converters ID 120 A • Excellent gate charge x R DS(on) product (FOM)

H5N03LA

Abstract: PG-TO252-3-11 P-TO252-3-11 IPDH5N03LA IPSH5N03LA JESD22 H5N03L
Contextual Info: IPDH5N03LA G OptiMOS 2 Power-Transistor IPSH5N03LA G Product Summary Features • Ideal for high-frequency dc/dc converters • Qualified according to JEDEC1 for target application V DS 25 V R DS on),max (SMD version) 5.2 mΩ ID 50 A • N-channel, logic level

PG-TO252-3-11

Abstract: 03N03LA IPD03N03LA IPS03N03LA JESD22 P-TO252-3-11 03n03l DSA0026156
Contextual Info: IPD03N03LA G OptiMOS 2 Power-Transistor IPS03N03LA G Product Summary Features • Ideal for high-frequency dc/dc converters • Qualified according to JEDEC1 for target applications V DS 25 V R DS on),max (SMD Version) 3.2 mΩ ID 90 A • N-channel, logic level

PG-TO252-3-11

Abstract: H9N03LA TO252-3 PG-TO-252-3-11 TO252-3-11 JESD22 h9n03 H9N03L
Contextual Info: IPDH9N03LA G OptiMOS 2 Power-Transistor IPSH9N03LA G Product Summary Features • Ideal for high-frequency dc/dc converters • Qualified according to JEDEC1 for target application V DS 25 V R DS on),max (SMD version) 9.2 mΩ ID 30 A • N-channel, logic level

057N06N

Abstract: 054N06N IEC61249-2-21 JESD22 PG-TO220-3 ua358
Contextual Info: Type IPB054N06N3 G IPP057N06N3 G OptiMOS 3 Power-Transistor Product Summary Features • Ideal for high frequency switching and sync. rec. • Optimized technology for DC/DC converters V DS 60 V R DS on ,max (SMD) 5.4 mΩ ID 80 A • Excellent gate charge x R DS(on) product (FOM)

052N06L

Abstract: IEC61249-2-21 IPP052N06L3 JESD22 PG-TO220-3 gs 05 24 gd 2
Contextual Info: Type IPB049N06L3 G IPP052N06L3 G OptiMOS 3 Power-Transistor Product Summary Features • Ideal for high frequency switching and sync. rec. • Optimized technology for DC/DC converters V DS 60 V R DS on ,max (SMD) 4.7 mΩ ID 80 A • Excellent gate charge x R DS(on) product (FOM)

093N06N

Abstract: 090N06N IEC61249-2-21 JESD22 PG-TO220-3 marking D50 IPP093N06N3
Contextual Info: Type IPB090N06N3 G IPP093N06N3 G OptiMOS 3 Power-Transistor Product Summary Features • for sync. rectification, drives and dc/dc SMPS • Excellent gate charge x R DS on product (FOM) V DS 60 V R DS(on),max (SMD) 9 mΩ ID 50 A • Very low on-resistance R DS(on)