TRANSISTOR SMD G 28 Search Results

20S45

Abstract: C67078-S1357-A2 103AL
Contextual Info: BUZ 103AL SIPMOS Power Transistor • N channel • Enhancement mode • Avalanche-rated • Logic Level • dv/dt rated • Low on-resistance • 175 °C operating temperature Pin 1 • also in TO-220 SMD available Pin 2 G Pin 3 D S Type VDS ID RDS on

09N03

Abstract: 09n03la PG-TO263-3-2 PG-TO-263-3-2 09N03LA equivalent IPB09N03LA JESD22 09N03L
Contextual Info: IPB09N03LA G OptiMOS 2 Power-Transistor Product Summary Features • Ideal for high-frequency dc/dc converters • Qualified according to JEDEC1 for target applications V DS 25 V R DS on),max (SMD version) 8.9 mΩ ID 50 A • N-channel - Logic level • Excellent gate charge x R DS(on) product (FOM)

FET K 1358

Abstract: K 1358 fet transistor 11N03LA IPB11N03LA JESD22 PG-TO263-3-2 11N03 marking ff
Contextual Info: IPB11N03LA G OptiMOS 2 Power-Transistor Product Summary Features • Ideal for high-frequency dc/dc converters • Qualified according to JEDEC1 for target application V DS 25 V R DS on),max (SMD version) 11.2 mΩ ID 30 A • N-channel • Logic level • Excellent gate charge x R DS(on) product (FOM)

transistor smd hq

Contextual Info: f u H v i u S E M I C O N D U C T O R A R R HM-65642 IS 8K X 8 Asynchronous CMOS StStiC RAM January 1992 Features Description • Full CMOS Design The HM-65642 is a CMOS 8192 x 8-bit Static Random Access Memory. The pinout is the JEDEC 28 pin, 8-bit wide standard, which

g1 smd transistor

Abstract: SMD transistor r24 SMD TRANSISTOR G1 Diode GP 622 3 pin SMD hall sensor g3 smd transistor smd transistor pinout sot23 SMD Transistor nc
Contextual Info: ZXBM1015EV1 ZXBM1015EV1 USER GUIDE DESCRIPTION The ZXBM1015EV1 is a demonstration board for evaluating the ZXBM1015 Single Phase Brushless DC Motor Controller. PWM input control, thermistor input control or voltage input control can be selected simply by inserting a jumper.

smd transistor nm

Abstract: 6 pin TRANSISTOR SMD CODE p Transmissive Optical Sensor 3 pin nm smd transistor SMD Transistor 1f TRANSISTOR 610 smd Photo Modules NM smd transistor NM DUAL IR REFLECTIVE SENSOR telefunken LED
Contextual Info: VISHAY Vishay Telefunken Y Vishay Telefunken Type Designation Code Detectors U • T • • • 1 Vishay Telefunken T 1 f Series P = Plastic F = Plastic Filter S = Side View M = SMD Y = Fiber Optic Internal Classification Package Varieties 1f Detector 1r

BFQ149

Abstract: nxp power microwave transistor
Contextual Info: BFQ149 PNP 5 GHz wideband transistor Rev. 03 — 28 September 2007 Product data sheet IMPORTANT NOTICE Dear customer, As from October 1st, 2006 Philips Semiconductors has a new trade name - NXP Semiconductors, which will be used in future data sheets together with new contact

Contextual Info: BLS7G2729L-350P; BLS7G2729LS-350P LDMOS S-band radar power transistor Rev. 5 — 16 May 2014 Product data sheet 1. Product profile 1.1 General description 350 W LDMOS power transistor for S-band radar applications in the frequency range from 2.7 GHz to 2.9 GHz.

report on colpitts oscillator

Abstract: TRANSISTOR SMD L82 smd transistor N33 B69812-N1897-A320 Colpitts Wideband VCO Circuit Schematic and PCB Layout 3ip2 Frequency Filters downconvertor 1890MHZ BFG505
Contextual Info: Philips Semiconductors 1890 MHz low power downconverter with 110 MHz I.F. . . . . . ^ ,Ca IOn ref3° 1890 M Hz LO W PO W E R DOW NCONVERTER W IT H 110 M Hz I.F . Introduction This application note describes the performance of a 1890 MHz low voltage 3 volt

Contextual Info: BLF8G20LS-400PV; BLF8G20LS-400PGV Power LDMOS transistor Rev. 1 — 6 June 2013 Preliminary data sheet 1. Product profile 1.1 General description 400 W LDMOS power transistor with improved video bandwidth for base station applications at frequencies from 1805 MHz to 1995 MHz.

AN1294

Abstract: J-STD-020B PD57030-E PD57030S-E PD57030STR-E PD57030TR-E
Contextual Info: PD57030-E RF POWER transistor, LdmoST plastic family N-channel enhancement-mode, lateral MOSFETs Features • Excellent thermal stability ■ Common source configuration ■ POUT = 30 W with 14dB gain @ 945 MHz / 28 V ■ New RF plastic package Description

irfp460 dc welding circuit diagram

Abstract: irfp450 mosfet full bridge ZVT Full bridge transformer IGBT IGBT ZVT Full bridge lossless passive clamp flyback converter ZVT full bridge for welding irfp450 mosfet full bridge pwm 47N60S5 AN-CoolMOS-02 siemens rectifier pwm igbt
Contextual Info: Version 1.1 , June 2000 Application Note AN-CoolMOS-02 CoolMOS Selection Guide Author: Ilia Zverev, Jon Hancock Published by Infineon Technologies AG http://www.infineon.com Power Conversion N e v e r s t o p t h i n k i n g CoolMOS Selection Guide This selection guide shows the main application fields of CoolMOS transistors, answers

diode BB102

Abstract: RF TRANSISTOR 10GHZ low noise Tv tuner Diagram LG RF VCO 9GHZ 10GHZ Transistor GaAs FET Low Noise NF 1.6dB 2SC4784F ultra high frequency FETs or transistors A08 smd transistor lg tv electronic diagram SMD TRANSISTOR fet
Contextual Info: HITACHI SMALL SIGNAL TRANSISTOR HITACHI Small Signal Transistor Products December, 2000 Product Marketing Dept. Multi Purpose Semiconductor Business Division Semiconductor & Integrated Circuits, HITACHI Ltd. HITACHI HITACHI SMALL SIGNAL TRANSISTOR 1. Hitachi neither warrants nor grants licenses of any rights of Hitachi′s or any third party′s patent, copyright,

AN1294

Abstract: J-STD-020B LET9045S PD57030S capacitor 220uf
Contextual Info: LET9045S RF POWER TRANSISTORS Ldmos Enhanced Technology in Plastic Package TARGET DATA N-CHANNEL ENHANCEMENT-MODE LATERAL MOSFETs • EXCELLENT THERMAL STABILITY • COMMON SOURCE CONFIGURATION • POUT = 45 W with 17 dB gain MIN @ 945 MHz / 28V • NEW RF PLASTIC PACKAGE

smd transistor S5

Contextual Info: SFT978 Series Solid State Devices, Inc. 14701 Firestone Blvd * La Mirada, CA 90638 Phone: 562 404-4474 * Fax: (562) 404-1773 ssdi@ssdi-power.com * www.ssdi-power.com 0.1 AMP, 1000 Volts High Voltage, Medium Power NPN Transistor DESIGNER’S DATA SHEET Part Number / Ordering Information 1/

Contextual Info: BLC8G27LS-160AV Power LDMOS transistor Rev. 2 — 3 June 2014 Product data sheet 1. Product profile 1.1 General description 160 W LDMOS packaged asymmetrical Doherty power transistor for base station applications at frequencies from 2496 MHz to 2690 MHz. Table 1.

transistor smd marking za sot-23

Abstract: MOSFET TRANSISTOR SMD MARKING CODE ZA TRANSISTOR SMD MARKING CODE KE sot-23 MARKING CODE ZA TRANSISTOR SMD MARKING CODE TK SMD MARKING CODE sdp intersil MARKING CODE ZA RF TRANSISTOR SMD MARKING CODE TK TW6817-LA1-GR smd transistor marking code XC
Contextual Info: Ordering Nomenclature I NTERSIL N OMENCLATURE GUIDE Intersil Nomenclatures . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2 ISL Types . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2

VARISTOR S10k275

Abstract: IRFB3206 DIODE NU 1N4148smd full bridge smps resonance snubber NCP1397 NCP1397A ferrite transformer atx power supply FUSE SH22,5A capacitor 1000 MF
Contextual Info: AND8460/D Implementing a 12 V / 240 W Power Supply with the NCP4303B, NCP1605 and NCP1397B http://onsemi.com Prepared by: Roman Stuler, Jaromir Uherek and Ivan Seifert APPLICATION NOTE ON Semiconductor Overview height of only 35 mm. An overview of the entire SMPS

Contextual Info: PT6650 Series 5-A 12 /24-V Input Adjustable Integrated Switching Regulator SLTS038B -FEBRUARY 1999 - REVISED MARCH 2004 Features • • • • • • • Single Device: 5-A Output Input Voltage Range: 9 V to 28 V 12 V / 24 V Input Compatible Adjustable Output Voltage

Contextual Info: BUD7312 Vishay Telefunken Silicon NPN High Voltage Switching Transistor Features D D D D D D D D D Simple-sWitch-Off Transistor SWOT HIGH SPEED technology Planar passivation 100 kHz switching rate Very low dynamic saturation Very low operating temperature

Contextual Info: PD57045 PD57045S RF POWER TRANSISTORS The LdmoST FAMILY PRELIMINARY DATA N-CHANNEL ENHANCEMENT-MODE LATERAL MOSFETs • EXCELLENT THERMAL STABILITY • COMMON SOURCE CONFIGURATION • POUT = 45 W with 13 dB gain @ 945 MHz / 28V • NEW RF PLASTIC PACKAGE DESCRIPTION

Contextual Info: BLF8G20LS-160V Power LDMOS transistor Rev. 2 — 24 June 2014 Product data sheet 1. Product profile 1.1 General description 160 W LDMOS power transistor with improved video bandwidth for base station applications at frequencies from 1800 MHz to 2000 MHz. Table 1.

eeg device

Abstract: PT6650 dallas 1620
Contextual Info: PT6650 Series 5-A 12 /24-V Input Adjustable Integrated Switching Regulator SLTS038B -FEBRUARY 1999 - REVISED MARCH 2004 Features • • • • • • • Single Device: 5-A Output Input Voltage Range: 9 V to 28 V 12 V / 24 V Input Compatible Adjustable Output Voltage

PD57045S

Abstract: 700B AN1294 PD57045
Contextual Info: PD57045 PD57045S RF POWER TRANSISTORS The LdmoST FAMILY N-CHANNEL ENHANCEMENT-MODE LATERAL MOSFETs • EXCELLENT THERMAL STABILITY • COMMON SOURCE CONFIGURATION • POUT = 45 W with 13 dB gain @ 945 MHz / 28V • NEW RF PLASTIC PACKAGE DESCRIPTION The PD57045 is a common source N-Channel,