IPD09N03LB Search Results
IPD09N03LB Datasheets (4)
| Part | ECAD Model | Manufacturer | Description | Datasheet Type | PDF Size | Page count | |
|---|---|---|---|---|---|---|---|
| IPD09N03LB | Infineon Technologies | OptiMOS2 - SuperSO8, SO8, DPAK | Original | 318.86KB | 9 | ||
| IPD09N03LB G | Infineon Technologies | Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single - MOSFET N-CH 30V 50A DPAK | Original | 636.25KB | |||
| IPD09N03LBG | Infineon Technologies | FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 30V 50A DPAK | Original | 12 | |||
| IPD09N03LBG | Infineon Technologies | OptiMOS 2 Power-Transistor | Original | 416.57KB | 12 |
IPD09N03LB Price and Stock
Infineon Technologies AG IPD09N03LBGPower Field-Effect Transistor, 50A I(D), 30V, 0.0142ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA |
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| Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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IPD09N03LBG | 8,641 |
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Get Quote | |||||||
IPD09N03LB Datasheets Context Search
| Catalog Datasheet | Type | Document Tags | |
|---|---|---|---|
09n03lb
Abstract: 09N03 09N03L TRANSISTOR SMD MARKING CODE 42 IPD09N03LB PG-TO252-3-11 IPD09N03LBG
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Original |
ipd09n03lbipu09n03lbips09n03lbipf09n03lb+7 | |
09N03
Abstract: S4264 09n03lb IPD09N03LB JESD22 PG-TO252-3-11 P-TO252-3-11 Q67042-S4264
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Original |
ipd09n03lbpg-to252-3-11q67042-s426409n03lb+4 | |
09N03
Abstract: 09n03lb 09n03l IPD09N03LB PG-TO252-3-11
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Original |
ipd09n03lbipf09n03lbips09n03lbipu09n03lb+5 | |
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Contextual Info: IPD09N03LB G IPF09N03LB G IPS09N03LB G IPU09N03LB G OptiMOS 2 Power-Transistor Product Summary Features • Ideal for high-frequency dc/dc converters • Qualified according to JEDEC1 for target applications V DS 30 V R DS on),max (SMD version) 9.1 mΩ |
Original |
ipd09n03lbipf09n03lbips09n03lbipu09n03lb+2 | |
smd marking D50Contextual Info: IPD09N03lB G IPS09N03LB G OptiMOS 2 Power-Transistor Product Summary Features • Ideal for high-frequency dc/dc converters • Qualified according to JEDEC1 for target applications V DS 30 V R DS on),max 9.1 mΩ ID 50 A • N-channel, logic level • Excellent gate charge x R DS(on) product (FOM) |
Original |
ipd09n03lbips09n03lbpg-to252-3-1109n03lb+2 | |
09N03
Abstract: 09N03LB IPD09N03LB JESD22 PG-TO252-3-11
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Original |
ipd09n03lbips09n03lbpg-to252-3-11pg-to251-3-11+3 | |
09n03lb
Abstract: PG-TO252-3-23
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Original |
ipd09n03lbipu09n03lbips09n03lbipf09n03lb+2 | |
PG-TO252-3-11
Abstract: 09n03 PG-TO-252-3-11 IPF09N03LB 09N03L PG-TO252 09n03lb
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Original |
ipd09n03lbipf09n03lbips09n03lbipu09n03lb+6 | |
S 170 MOSFET TRANSISTOR
Abstract: 8203 dual mosfet S 170 MOSFET SOT323 MOSFET P MOSFET SWITCHING FREQUENCY IPS09N03LA P-channel power mosfet SO-8 TDA21102 mosfet all mosfet equivalent book
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Original |
b152-h8203-g4-x-7600s 170 mosfet transistor8203 dual mosfets 170 mosfet+7 | |
IRF1830G
Abstract: IRF1830 transistor IRF1830G APM2054N equivalent apm2054n AP85L02h AP70N03S 2SK3683 ap70l02h 2SK2696
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Original |
ao4405ao4407ao4408ao4409+16 |