TRANSISTOR SH 550 Search Results

Contextual Info: DATA SH EE T MOS FIELD EFFECT TRANSISTOR _ HPA1758 SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE DESCRIPTION This product is Dual N-Channel MOS Field Effect Transistor designed for power m anagement application of notebook com puters, and Li-ion battery application.

2SK1746

Contextual Info: T O SH IB A ^□^7250 GGE334b 57T TO SH IBA FIELD EFFECT TRANSISTOR 2SK1746 SILICON N CHANNEL M OS TYPE tt- M O S II 2 S K 1 746 HIGH SPEED, HIGH CURRENT SWITCHING APPLICATIONS. U n it in mm TO-220FL DC-DC CONVERTER AND M OTOR DRIVE APPLICATIONS. • Low D rain-Source ON R esistance

2103F

Contextual Info: T O SH IB A RN2101 F~RN2106F TOSHIBA TRANSISTOR SILICON PNP EPITAXIAL TYPE PCT PROCESS RN2101F, RN2102F, RN2103F RN2104F, RN2105F, RN2106F SWITCHING, INVERTER CIRCUIT, INTERFACE CIRCUIT AND DRIVER CIRCUIT APPLICATIONS. • With Built-in B ias Resistors •

Contextual Info: T O SH IB A TLP631,TLP632 TOSHIBA PHOTOCOUPLER GaAs IRED & PHOTO-TRANSISTOR TLP631, TLP632 PROGRAMMABLE CONTROLLERS U nit in mm AC/DC-INPUT MODULE SOLID STATE RELAY 6 5 4 1 2 3 T1 TT IT3 The TOSHIBA TLP631 and TLP632 consist of a photo-transistor optically coupled to a gallium arsenide infrared em itting diode in a

10ID

Abstract: 2SC2714
Contextual Info: TO SH IBA 2SC2714 TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE PCT PROCESS 2SC2714 HIGH FREQUENCY AMPLIFIER APPLICATIONS FM, RF, MIX, IF AMPLIFIER APPLICATIONS Unit in mm + 0.5 2 .5 -0 .3 + • Small Reverse Transfer Capacitance : Cre = 0.7pF (Typ.)

Contextual Info: T O SH IB A 2SC1923 TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE PCT PROCESS 2SC1923 Unit in mm HIGH FREQUENCY AMPLIFIER APPLICATIONS. FM, RF, MIX, IF AMPLIFIER APPLICATIONS. • Small Reverse Transfer Capacitance : Cre = 0.7pF (Typ.) Low Noise Figure

Contextual Info: TOSHIBA FIELD EFFECT TRANSISTOR SEM ICONDUCTOR TO SH IBA TECHNICAL 2 S K 2 173 DATA SILICON N CHANNEL MOS TYPE L2-tt-M O SV (2SK2173) HIGH SPEED, HIGH CURRENT SWITCHING APPLICATIONS INDUSTRIAL APPLICATIONS CHOPPER REGULATOR, DC-DC CONVERTER AND MOTOR DRIVE

EU100

Abstract: 2SC2668-Y 2SC2668 QE RB 29
Contextual Info: TO SH IBA TOSHIBA TRANSISTOR 2SC2668 SILICON NPN EPITAXIAL PLANAR TYPE PCT PROCESS 2SC2668 Unit in mm HIGH FREQUENCY AMPLIFIER APPLICATIONS FM, RF, IF AMPLIFIER APLIFIER APPLICATIONS 4 .2 M A X . • • Small Reverse Transfer Capacitance : Cre = 0.70 pF (Typ.)

2SC4215

Contextual Info: 2SC4215 TO SH IBA 2SC4215 TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE HIGH FREQUENCY AMPLIFIER APPLICATIONS FM, RF, MIX, IF AMPLIFIER APPLICATIONS • • Small Reverse Transfer Capacitance : Cre = 0.55 pF Typ. Low Noise Figure : NF = 2 dB (Typ.) (f = 100 MHz)

transistor Sh 550

Abstract: transistor 2sk 2232
Contextual Info: TOSHIBA FIELD EFFECT TRANSISTOR SEM ICONDUCTOR TO SH IBA TECHNICAL 2SK2232 DATA SILICON N CHANNEL MOS TYPE L2- 7 T - M O S V (2SK 2232) INDUSTRIAL APPLICATIONS Unit in mm HIGH SPEED, HIGH CURRENT SWITCHING APPLICATIONS CHOPPER REGULATOR, DC-DC CONVERTER AND MOTOR DRIVE

transistor Sh 550

Contextual Info: TOSHIBA FIELD EFFECT TRANSISTOR SEM ICONDUCTOR TO SH IBA TECHNICAL 2SK2232 SILICON N CHANNEL MOS TYPE DATA L2- 7 T - M O S V (2SK 2232) INDUSTRIAL APPLICATIONS Unit in mm HIGH SPEED, HIGH CURRENT SWITCHING APPLICATIONS CHOPPER REGULATOR, DC-DC CONVERTER AND MOTOR DRIVE

Contextual Info: TO SH IB A 2SC4215 TO SHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE 2SC4215 HIGH FREQUENCY AM PLIFIER APPLICATIO NS Unit in mm FM, RF, MIX, IF AM PLIFIER APPLICATIO NS 2.1 ± 0.1 1 .2 5 t 0.1 • Sm all Reverse Transfer Capacitance : Cre = 0.55pF Typ.

NEC Ga FET marking L

Contextual Info: DATA SH E E T HETERO JUNCTION FIELD EFFECT TRANSISTOR NE429M01 C to Ku BAND SUPER LOW NOISE AMPLIFIER N-CHANNEL HJ-FET DESCRIPTION The NE429M01 is a Hetero Junction FET that utilizes the hetero junction to create high mobility electrons. Its excellent low noise and high associated gain make it suitable for DBS, TVRO and another commercial systems.

Contextual Info: DA TA SH EET HETERO JUNCTION FIELD EFFECT TRANSISTOR NE429M01 C to Ku BAND SUPER LOW NOISE AMPLIFIER N-CHANNEL HJ-FET DESCRIPTION The NE429M01 is a Hetero Junction FET that utilizes the hetero junction to create high mobility electrons. Its excellent low noise and high associated gain make it suitable for DBS, TVRO and another commercial systems.

Contextual Info: TOSHIBA GT80J101 TO SH IBA INSULATED GATE BIPO LA R TRANSISTOR SILICON N - CHANNEL M O S TYPE G T 8 0 J 1 01 U n it in m m HIGH P O W ER SWITCHING APPLICATIONS. 2 0.5M AX. • H ig h In p u t Im pedance • H ig h Speed ^3-3 ±0.2 t f = 0 .4 0 / / s M ax.

K1500E

Abstract: K1100A
Contextual Info: TECCÔR ELECTRONICS INC fiê ? 2 ô n 24E D DOGISHS S "-ZS-OG [¡t e c c o r III ELECTRONICS, INC. 1801 HURD DRIVE IRVING, TEXAS 75038-4385 •PHONE 214/580-1515 FAX 214/550-1309 SIDAC 95-330 VOLTS} t General Description Applications The Sidac is a silicon bilateral voltage triggered

Contextual Info: Sensors CCD123 1728-Element Linear Image Sensor Fairchild Imaging Sensors FEATURES • ■ ■ ■ ■ ■ ■ ■ 1728 » 1 photosile array 13pm x 10pm on 10pm pitch Low dark signal High responslvlty On-chip clock drivers Dynamic range typical: 5500:1 Over 1V peak-to-peak output

wps1

Abstract: transistor Sh 550
Contextual Info: TOSHIBA FIELD EFFECT TRANSISTOR SEM ICONDUCTOR TO SHIBA TECHNICAL 2 S K 2 173 DATA SILICON N CHANNEL MOS TYPE L 2-tt-M O SV (2SK2173) INDUSTRIAL APPLICATIONS HIGH SPEED, HIGH CURRENT SWITCHING APPLICATIONS CHOPPER REGULATOR, DC-DC CONVERTER AND MOTOR DRIVE

transistor Sh 550

Abstract: 2SK1721
Contextual Info: 2SK1721 TOSHIBA TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE tt- M O SII 2 S K 1 7 21 HIGH SPEED, HIGH CURRENT SWITCHING APPLICATIONS. TO-220FL DC-DC CONVERTER AND MOTOR DRIVE APPLICATIONS. • • • • Unit in mm 10.3M AX. Low Drain-Source ON Resistance : Rd S(ON) —2.50 (Typ.)

2SJ312

Contextual Info: TO SHIBA 2SJ312 TOSHIBA FIELD EFFECT TRANSISTOR SILICON P CHANNEL MOS TYPE L2-tt-MOS1V 2SJ312 HIGH SPEED, HIGH CURRENT SWITCHING APPLICATIONS DC-DC CONVERTER, RELAY DRIVE AND MOTOR DRIVE APPLICATIONS IN D U ST R IA L A PPLIC A TIO N S U nit in m m TO-22QFL

2SJ439

Contextual Info: TOSHIBA 2SJ439 TOSHIBA FIELD EFFECT TRANSISTOR SILICON P CHANNEL MOS TYPE tt-M OSV 2SJ439 INDUSTRIAL APPLICATIONS Unit in mm HIGH SPEED, HIGH CURRENT SWITCHING APPLICATIONS DC-DC CONVERTER, RELAY DRIVE AND MOTOR DRIVE APPLICATIONS 2.5 V Gate Drive Low Drain-Source ON Resistance : RßS (ON) = 0.18 ü, (Typ.)

T0529

Abstract: BGB550 SCT595
Contextual Info: P r e l i m in a r y d a t a s h e e t , B G B 5 5 0 , J a n . 2 0 0 1 y BGB 550 li m in ar Mirror Biased Transistor P re MMIC W ir e le ss Si l ic o n D is c r e t e s N e v e r s t o p t h i n k i n g . @qv‡v‚Ã!   Qˆiyv†urqÃi’ÃDsvr‚ÃUrpu‚y‚tvr†Ã6B

2SJ439

Contextual Info: TOSHIBA 2SJ439 TOSHIBA FIELD EFFECT TRANSISTOR SILICON P CHANNEL MOS TYPE tt-M O SV 2SJ439 INDUSTRIAL APPLICATIONS Unit in mm HIGH SPEED, HIGH CURRENT SWITCHING APPLICATIONS DC-DC CONVERTER, RELAY DRIVE AND MOTOR DRIVE APPLICATIONS 2.5V Gate Drive Low Drain-Source ON Resistance : Rd S(ON) =0.180 (Typ.)

Contextual Info: TOSHIBA 2SK2889 TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE tt-MOSV 2SK2889 HIGH SPEED, HIGH CURRENT SWITCHING APPLICATIONS CHOPPER REGULATOR, DC-DC CONVERTER AND MOTOR DRIVE INDUSTRIAL APPLICATIONS Unit in mm APPLICATIONS • • • •