GT80J Search Results

A1252

Contextual Info: SILICON N CHANNEL MOS TYPE GT80J101 Unit in mm HIGH POWER SWITCHING APPLICATIONS. 2 0 5M AX- • High Input Impedance • High Speed tf=0.40¿/s Max. • Low Saturation Voltage v CE(sat) = 3-5V (Max.) • Enhancement-Mode 0 3 .3 ± O .2 M A X IM U M RATINGS (Ta = 25°C)

Contextual Info: TOSHIBA GT80J101 TO SH IBA INSULATED GATE BIPO LA R TRANSISTOR SILICON N - CHANNEL M O S TYPE G T 8 0 J 1 01 U n it in m m HIGH P O W ER SWITCHING APPLICATIONS. 2 0.5M AX. • H ig h In p u t Im pedance • H ig h Speed ^3-3 ±0.2 t f = 0 .4 0 / / s M ax.

Contextual Info: GT80J101 HIGH POWER SW ITCHING APPLICATIONS. • • • • High Input Impedance High Speed : tf=0.40^s M ax. Low Saturation Voltage : V cE(sat) = 3-5V(Max.) Enhancement-Mode M A X IM U M RATINGS (Ta = 25°C) CHARACTERISTIC Collector-Emitter Voltage Gate-Emitter Voltage

GT80J101A

Contextual Info: GT80J101A TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel MOS Type GT80J101A High Power Switching Applications • Enhancement-Mode • High Speed: tf = 0.40 µs max (IC = 80 A) • Low Saturation Voltage: VCE (sat) = 3.0 V (max) (IC = 80 A)

GT80J101

Contextual Info: GT80J101 TOSHIBA INSULATED GATE BIPOLAR TRANSISTOR SILICON N − CHANNEL MOS TYPE GT80J101 Unit: mm HIGH POWER SWITCHING APPLICATIONS High Input Impedance High Speed : tf = 0.40µs Max. Low Saturation Voltage : VCE (sat) = 3.5V (Max.) Enhancement−Mode

Contextual Info: GT80J101 T O SH IB A TOSHIBA INSULATED GATE BIPOLAR TRANSISTOR SILICON N-CHANNEL MOS TYPE G T 8 0 J 1 01 HIGH POWER SWITCHING APPLICATIONS. • • • • High. Input Impedance High Speed Low Saturation Voltage Enhancement-Mode t f= 0.40//S Max. VCE(sat) = 3-5V (Max->

GT80J101

Abstract: 80J101 2-21F1C J101
Contextual Info: TOSHIBA GT80J101 G T 8 0 J 101 TO SHIBA INSULATED GATE BIPOLAR TRANSISTOR SILICON N -C H A N N E L MOS TYPE HIGH POWER SW ITCHING APPLICATIONS. • High Input Impedance • High Speed • Low Saturation Voltage • Enhancement-Mode tf=0.40^s Max. v CE(sat) = 3-5V (Max.)

GT80J101

Contextual Info: GT80J101 TOSHIBA INSULATED GATE BIPOLAR TRANSISTOR SILICON N − CHANNEL MOS TYPE GT80J101 Unit: mm HIGH POWER SWITCHING APPLICATIONS l High Input Impedance l High Speed : tf = 0.40µs Max. l Low Saturation Voltage : VCE (sat) = 3.5V (Max.) l Enhancement−Mode

Contextual Info: TOSHIBA GT80J101 GT 8 0 J 1 01 TO SHIBA INSULATED GATE BIPOLAR TRANSISTOR SILICON N -C H A N N E L MOS TYPE HIGH POWER SW ITCHING APPLICATIONS. • • • • High Input Impedance High Speed Low Saturation Voltage Enhancement-Mode tf=0.40/¿s Max. V C E (sat) = 3-5V(Max.)

Contextual Info: TOSHIBA GT80J101 GT 8 0 J 1 01 TO SHIBA INSULATED GATE BIPOLAR TRANSISTOR SILICON N -C H A N N E L MOS TYPE HIGH POWER SW ITCHING APPLICATIONS. • • • • High Input Impedance High Speed Low Saturation Voltage Enhancement-Mode tf=0.40/¿s Max. V C E (sat) = 3-5V(Max.)

80J101

Abstract: GT80J101B
Contextual Info: GT80J101B TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT GT80J101B High Power Switching Applications Unit: mm • Enhancement mode type • High speed: tf = 0.40 µs max (I C = 80 A) • Low saturation voltage: V CE (sat) = 2.9 V (max) (I C = 80 A)

GT80J101A

Contextual Info: GT80J101A TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT GT80J101A High Power Switching Applications Unit: mm • Enhancement-Mode • High Speed: tf = 0.40 µs max (IC = 80 A) • Low Saturation Voltage: VCE (sat) = 3.0 V (max) (IC = 80 A)

GT80J101A

Abstract: GT80J101
Contextual Info: GT80J101A TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT GT80J101A High Power Switching Applications Unit: mm • Enhancement mode type • High speed: tf = 0.40 µs max (IC = 80 A) • Low saturation voltage: VCE (sat) = 3.0 V (max) (IC = 80 A)

GT80J101A

Contextual Info: GT80J101A TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel MOS Type GT80J101A High Power Switching Applications • Enhancement-Mode • High Speed: tf = 0.40 µs max (IC = 80 A) • Low Saturation Voltage: VCE (sat) = 3.0 V (max) (IC = 80 A)

S5J53

Abstract: MIG30J103H 200J2 S5J25 mg7502ys MG150J1JS50 MIG100Q201H GT60M301 MIG30J103HB MP6753
Contextual Info: TOSHIBA [2 ] Introduction [ 2 ] Introduction 1. 600-V Third Generation IGBTs • • • M iniaturization technologies have improved the trade-off between switching speed and saturation voltage V qe (sat = 2-l v Ctyp.) tf = 0.2 pis (typ.). The therm al resistance has been cut for added reliability by using a high heat conduction

GT250101

Abstract: MG150J2YS40 MG75Q2YS11 MG400Q1US11 MG200Q1JS9 MG75J2YS40 MG50J6ES40 MG200Q2YS91 MG75J6ES40 mg100q2ys9
Contextual Info: Insulated ìate Bipolar Transistors (IG BTs Milestones in IGBT Technology In 1986, Toshiba started the production of its 1st Generation 1000V IGBTs. With the introduction of Toshiba’s 2nd Generation in 1989, IGBTs were made available in High Speed and Low Saturation types for both a 600V and a

GT30J124

Abstract: GT30F123 GT45F122 gt30g122 gt40j323 gt30g123 gt30f122 IGBT GT30J124 GT45f122 Series gt45f123
Contextual Info: 2009-3 PRODUCT GUIDE Discrete IGBTs SEMICONDUCTOR http://www.semicon.toshiba.co.jp/eng 1 Features and Structure IGBT: I nsulated G ate Bipolar Transistor IGBTs combine the MOSFET advantage of high input impedance with the bipolar transistor advantage of high-voltage drive.

STR-G6551

Abstract: STR-F6654 g6551 TDA16822 STR-F6653 strg6551 IGBT cross reference KA5M0565R TOP224Y equivalent BUP 312
Contextual Info: Cross Reference, V1.0, Apr. 2002 Alphanumerical Cross Reference CoolMOSTM/IGBT/EmConTM/CoolSETTM Power Management & Supply N e v e r s t o p t h i n k i n g . Alphanumerical Cross Reference Revision History: 2002-04 V1.0 Previous Version: Page Subjects major changes since last revision

GT30F124

Abstract: GT30J124 GT30F123 gt30g124 GT45F122 *45F122 GT30F124 Equivalent *30g122 gt30g122 gt30f122
Contextual Info: 2010-3 PRODUCT GUIDE Discrete IGBTs h t t p : / / w w w. s e m i c o n . t o s h i b a . c o . j p / e n g 1 Features and Structure IGBT: I nsulated G ate Bipolar Transistor IGBTs combine the MOSFET advantage of high input impedance with the bipolar transistor

GT50J101

Abstract: GT50T101 mosfet 500V 50A GT60M102 S5J53 GT60J101 gt15q101 equivalent GT60M101 S5783F 500V N-Channel IGBT TO-3P
Contextual Info: Discrete IGBTs PRODUCT GUIDE Features and Structure •Low carrier accumulation, excellent frequency and switching characteristics •Large forward-bias and reverse-bias safe operating areas FBSOA and RBSOA , high damage resistance •MOSFET-like high input impedance characteristics enable voltage drive

15J102

Abstract: Transistor 2SC4288A Transistor 2SA 2SB 2SC 2SD Drive IC 2SC3346 2sa 102 transistor transistor 2SA 101 50J301 02SC5030 T15J103 Driver IC 2SC3346
Contextual Info: L -S T M T 0 -9 2 M 0 D T Y P E POWER TRANSISTOR V ’CEO \(V> 10 30 40 50 60 80 100 120 180 2SA949U50VI 2AC2229(150V) 0.05 200 250 2SA1321 2SC3334 300 2SC5122I400V) 2SA1145U50V) 2SC2705(!50V) 2SC2230(160V) 0.1 2SC2482 2SC2230A 2SA817A 0.4 2SC1627A 2SA1811

2sC5200, 2SA1943, 2sc5198

Abstract: GTI5Q101 2sc5039 2SC4532 2SD2088 2SC3303 2sC5200, 2SA1943 2SA1803 2sc4408 GT10G102
Contextual Info: • ALPHNUMERICAL INDEX Type No. Page Type No. Page Type No. Page 2SA817A 121 2SA1387 202 2SA1892 278 2SA940 123 2SA1388 206 2SA1893 280 2SA949 125 2SA1408 209 2SA1899 281 2SA965 127 2SA1425 212 2SA1905 282 2SA966 129 2SA1426 214 2SA1923 284 2SA1012 131 2SA1428

s5j53

Abstract: S5783F GT30J322 S5783 Electronic IH rice cooker GT50j101 MG30T1AL1 igbt induction cooker MG60M1AL1 mosfet 500V 50A
Contextual Info: 2003-3 03-3 E0010A BCE0010A PRODUCT GUIDE Discrete IGBTs Discrete IGBTs 2003 http://www.semicon.toshiba.co.jp/eng 1. Features and Structure IGBT: Insulated Gate Bipolar Transistor ● MOSFET-like high input impedance characteristics enable voltage drive ● With the conductivity modulation characteristics of a bipolar transistor, ideal for applications that require

TOSHIBA MG150N2YS40

Abstract: mg75n2ys40 MG15N6ES42 mg150n2ys40 2SK150A toshiba s2530a 2sk270a MG8N6ES42 MG15G1AL2 mg75j2ys40
Contextual Info: 小信号トランジスタ SMD ● 当社は品質､信頼性の向上に努めておりますが､一般に半導体製品は誤作動した り故障することがあります｡当社半導体製品をご使用いただく場合は､半導体製 品の誤作動や故障により､生命･身体･財産が侵害されることのないように､購入