transistor s72
Abstract: S72 Transistor KS621K40A41 transistor b 1417 transistor s70 powerex ks62
Contextual Info: PUMEVZGf KS621K40A41 Powerex, Inc., 200 Hillis Street, Youngwood, Pennsylvania 15697-1800 412 925-7272 Single Darlington Transistor Module 400 Amperes/1000 Volts OUTLINE DRAWING Description: The Powerex Single Darlington Transistor Modules are high power
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ks621k40a41amperes/1000transistor s72s72 transistor+3transistor b 1417transistor s70powerex ks62
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sx3704
Abstract: AP239 Transistor 80139 8C547 6C131C IN2222A 2N50B 2N2064 radio AC176 AC126 sft353
Contextual Info: INTERNATIONAL TRANSISTOR EQUIVALENTS GUIDE A LSO BY THE S A M E AUTHOR BP108 International Diode Equivalents Guide BP140 Digital IC Equivalents and Pin Connections BP141 Linear IC Equivalents and Pin Connections ALSO OF INTEREST BP234 Transistor Selector Guide
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sx3704ap239transistor 801398c547+66c131cin2222a2n50b2n2064radio ac176 ac126sft353
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Contextual Info: KS621K40A41 Powerex, Inc., 200 Hlllis Street, Youngwood, Pennsylvania 15697-1BOO 412 925-7272 Single Darlington Transistor Module 400 Amperes/1000 Volts O U T L I N E DRAWING Description: The Powerex Single Darlington Transistor Modules are high power devices designed for use in
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ks621k40a4115697-1booamperes/1000 |
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TRANSISTOR SE 135
Abstract: ks624550
Contextual Info: KS624550 Powerex, Inc., 200 Hillis Street, Youngwood, Pennsylvania 15697-1800 412 925-7272 H i Q h mB B t 3 Single Darlington Transistor Module 500 Amperes/600 Volts O U T L IN E DRAWING Description: The Powerex High-Beta Single Darlington Transistor Modules are
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ks624550amperes/600transistor se 135 |
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transistor s72
Abstract: S72 transistor BUK436-200A BUK436-200B buk436
Contextual Info: N AUER P H I L I P S / D I S C R E T E bTE ]> • bbS3T31 DQ304b5 Philips Semiconductors Product Specification PowerMOS transistor GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic envelope. The device is intended for use in
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bbs3t31dq304b5buk436-200a/bbuk436+6-200a-200btransistor s72s72 transistorbuk436-200abuk436-200b
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transistor marking s72
Abstract: transistor s72 Marking Code S72 s72 transistor transistor marking code s72 SOT-23 s72 sot 23 Transistor s72 sot23
Contextual Info: DATA SHEET 2N7002 N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR CURRENT 200 mAmp FEATURE Unit: inch mm SOT-23 N-channel enhancement mode field effect transistor,de- .007(.20) MIN. VOLTAGE 60 Volts .119(3.00) .110(2.80) .056(1.40) .047(1.20) signed for high speed pulse amplifier and drive applica-
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2n7002ot-23transistor marking s72transistor s72+5marking code s72s72 transistortransistor marking code s72 sot-23s72 sot 23transistor s72 sot23
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Contextual Info: BD131 _ y v _ SILICON PLANAR EPITAXIAL POWER TRANSISTOR N-P-N transistor in a SOT-32 plastic envelope for general purpose, medium power applications. P-N-P complement is BD132. Q U ICK R E F E R E N C E D A TA Collector-base voltage open emitter
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bd131ot-32bd132dd34243+1003424b
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d1694
Abstract: transistor D132 d-1694 BD131 D131 transistor d1687 TRANSISTOR D131 BD132 T4060 bm cb hen iv
Contextual Info: BD131 JV _ SILICON PLANAR EPITAXIAL POWER TRANSISTOR N-P-N transistor in a SOT-32 plastic envelope fo r general purpose, medium power applications. P-N-P complement is BD132. Q U IC K R E F E R E N C E D A T A VCBO max. 70 V Collector-emitter voltage open base
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bd131ot-32bd132o-126+9345l4bd1694transistor d132d-1694d131 transistord1687transistor d131t4060bm cb hen iv
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BLV80-28
Abstract: TRANSISTOR D 471 transistor s72 S72 transistor 15 w RF POWER TRANSISTOR NPN
Contextual Info: bSE T> 7 11 002 b GübETiö 734 M P H I N B L V 8 0 /2 8 PHILIPS INTERNA TIO NA L V.H.F. POWER TRANSISTOR N-P-N silicon planar epitaxial transistor prim arily intended fo r use in base stations in the v.h.f. mobile radio band. Features: • multi-base structure and diffused em itter ballasting resistors fo r an optim um temperature profile;
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711002bblv80/28ot-12100b3d0l+5blv80-28transistor d 471transistor s72s72 transistor15 w rf power transistor npn
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transistor SMD s72
Abstract: S72 SMD smd s72 smd transistor s72 smd transistor marking S72 smd marking S72 SmD s72 2N7002 transistor marking s72 2N7002 S72 SOT-23 2N7002 SOT-23
Contextual Info: Continental Device India Limited An ISO/TS 16949 and ISO 9001 Certified Company NPN CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR 2N7002 PIN COFIGURATION G= GATE S= SOURCE SOT-23 Formed SMD Package D= DRAIN Marking 2N7002=S72 Designed for High Speed Pulse Amplifier and Drive Application
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2n7002ot-23c-1202n7002rev021104e+10transistor smd s72s72 smdsmd s72smd transistor s72smd transistor marking s72smd marking s72smd s72 2n7002transistor marking s722n7002 s72 sot-232n7002 sot-23
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2n603l
Abstract: marking code H.5 Sot 23-5 BSP603S2L VPS05163 marking 18W diode
Contextual Info: BSP603S2L Preliminary data OptiMOS =Power-Transistor Feature Product Summary • N-Channel VDS 55 V RDS on 33 mΩ ID 5.2 A • Enhancement mode • Logic Level SOT-223 4 3 2 1 Type Package Ordering Code Marking BSP603S2L SOT-223 Q67060-S7213 2N603L VPS05163
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bsp603s2lot-223q67060-s7213vps05163+32n603lmarking code h.5 sot 23-5marking 18w diode
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2N615L
Abstract: BSP615S2L VPS05163 55B5
Contextual Info: BSP615S2L Preliminary data OptiMOS =Small-Signal-Transistor Feature Product Summary • N-Channel VDS 55 V RDS on 90 mΩ ID 2.8 A • Enhancement mode • Logic Level SOT-223 4 3 2 1 Type Package Ordering Code Marking BSP615S2L SOT-223 Q67060-S7211 2N615L
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bsp615s2lot-223q67060-s7211vps05163+22n615l55b5
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bfq34 application note
Abstract: ON4497 BFQ34 sf 122 transistor
Contextual Info: Philips Semiconductors h ^ 5 3 1 3 1 DD3 1 S5 Û G3 Ö • A P X ^ P r o d u c ts p e c ific a t i^ NPN 4 GHz wideband transistor BFQ34 N AriER P H I L I P S / D I S C R E T E fc.'JE » PINNING DESCRIPTION NPN transistor encapsulated in a 4 lead SOT 122A envelope with a
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dd31s5bfq34ot122aon4497+2bfq34 application notesf 122 transistor
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2N603L
Abstract: Q67060-S7213 BSP603S2L
Contextual Info: BSP603S2L OptiMOS Power-Transistor Product Summary Feature • N-Channel • Enhancement mode • Logic Level VDS 55 V R DS on 33 mΩ ID 5.2 A SOT 223 Type BSP603S2L Package SOT 223 Ordering Code Q67060-S7213 Marking 2N603L Maximum Ratings, at Tj = 25 °C, unless otherwise specified
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bsp603s2lq67060-s72132n603l |
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2N615L
Abstract: 55B5 BSP615S2L 2N615
Contextual Info: BSP615S2L OptiMOS Power-Transistor Product Summary Feature N-Channel Enhancement mode Logic Level VDS 55 V RDS on 90 m ID 2.8 A SOT 223 Type Package Ordering Code Marking BSP615S2L SOT 223 Q67060-S7211 2N615L Maximum Ratings, at Tj = 25 °C, unless otherwise specified
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bsp615s2lq67060-s72112n615l55b5+12n615
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2N603L
Abstract: Q67060-S7213 BSP603S2L d52a
Contextual Info: BSP603S2L OptiMOS Power-Transistor Product Summary Feature N-Channel Enhancement mode Logic Level Type BSP603S2L Package SOT 223 VDS 55 V R DS on 33 m ID 5.2 A SOT 223 Ordering Code Q67060-S7213 Marking 2N603L Maximum Ratings, at Tj = 25 °C, unless otherwise specified
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bsp603s2lq67060-s72132n603ld52a |
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2N603L
Abstract: BSP603S2L
Contextual Info: BSP603S2L OptiMOS Power-Transistor Product Summary Feature • N-Channel • Enhancement mode • Logic Level VDS 55 R DS on 33 m ID 5.2 A PG-SOT 223 • Pb-free lead plating; RoHS compliant Type BSP603S2L Package PG-SOT 223 V Ordering Code Q67060-S7213
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bsp603s2lq67060-s72132n603l |
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Contextual Info: BSP615S2L OptiMOS Power-Transistor Product Summary Feature • N-Channel • Enhancement mode • Logic Level VDS 55 V RDS on 90 m ID 2.8 A PG-SOT 223 • Pb-free lead plating; RoHS compliant Type Package Ordering Code Marking BSP615S2L PG-SOT 223 Q67060-S7211
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bsp615s2lq67060-s72112n615l |
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7408 philips
Abstract: MCD122 BFG33 transistor c 6093 L7E transistor IC 7408 ti HCC80 transistor 406 specification Hcc 036-0 lc 7408
Contextual Info: •I bbSBTBl 0054flCH Tb5 ■ APX P hilips Sem Product specification NPN 12 GHz wideband transistor BFG33; BFG33/X N AUER PHILIPS/DISCRETE FEATURES b7E ]> PINNING PIN • High power gain
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0054flchbfg33bfg33/xot143+97408 philipsmcd122transistor c 6093l7e transistoric 7408 tihcc80transistor 406 specificationhcc 036-0lc 7408
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2n7002
Abstract: S72 2n7002 transistor s72 2N7002 MARKING s72 2N7002 MARKING 2N7002C s72 sot 23
Contextual Info: 2N7002 N-Channel Enhancement Mode DMOS Transistor Features - high input impedance - high-speed switching - no minority carrier storage time - CMOS logic compatible input - no thermal runaway - no secondary breakdown Pin configuration 1 = Drain, 2 = Gate, 3 = Source.
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2n7002ot-23s72 2n7002transistor s72+42n7002 marking s722n7002 marking2n7002cs72 sot 23
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transistor marking s72
Abstract: transistor s72 k72 transistor 702 TRANSISTOR sot-23 s72 sot 23 k72 transistor sot 23 S72 2n7002 S72 transistor marking 702 2n7002 702
Contextual Info: 2N7002 VISHAY N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR LITEMZI y POWER SEMICONDUCTOR Features Low On-Resistance: 2.5Q Low Threshold: 2.1V Low Input Capacitance: 22pF Fast Switching Speed: 7.0ns Low Input/Output Leakage SOT-23 ~*\ : h - A TOP VIEW
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2n7002ot-23mil-std-202ds11303+10transistor marking s72transistor s72k72 transistor702 transistor sot-23s72 sot 23k72 transistor sot 23s72 2n7002s72 transistormarking 7022n7002 702
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k72 transistor sot 23
Abstract: transistor marking s72 k72 sot-23 transistor s72 k72 sot 23 k72 transistor S72 transistor S72 marking 702 TRANSISTOR sot-23 K72 SOT23
Contextual Info: 2N7002-01 VISHAY N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR LITEM ZI y POWER SEMICONDUCTOR Features Low On-Resistance: 2.5Q Low Threshold: 2.1V Low Input Capacitance: 22pF Fast Switching Speed: 7.0ns Low Input/Output Leakage SOT-23 ~ *\ : h - A TOP VIEW
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2n7002-01ot-23mil-std-202300ns+11ds30026k72 transistor sot 23transistor marking s72k72 sot-23transistor s72k72 sot 23k72 transistors72 transistors72 marking702 transistor sot-23k72 sot23
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3TE445
Abstract: 2N3303 ECC88 TAA*310 B9D TRANSISTOR BYY32 GEX36/7 Ferranti zs70 6ej7 3n159
Contextual Info: Radio Valve and Transistor Data Characteristics of 3,000 Valves and Cathode Ray Tubes, 4, 500 Transistors, Diodes, Rectifiers and Integrated Circuits Compiled by A.M.Ball First published February 1949 Ninth Edition published in 1970 by Iliffe Books, an imprint of the Butterworth Group
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fjj141/a2305dfjj181/a2305e/848+16fjj191/afjl101/acd2306dfjy101/a2306e/832cd2307/9443te4452n3303ecc88taa*310b9d transistorbyy32gex36/7ferranti zs706ej73n159
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sc5 s dc 6v relay
Abstract: P48D-70-600 UPD66010 UPD7752 AC03E uPD7520 uPA1601 UPD70208H uPD72020 uPD16503
Contextual Info: SEMICONDUCTORS SELECTION GUIDE Microcomputer 1 IC Memory 2 Semi-Custom IC 3 Particular Purpose IC 4 General Purpose Linear IC 5 Transistor/Diode/Thyristor 6 Microwave Device/ Consumer-Use High Frequency Device 7 Optical Device 8 Packages 9 Index 10 October 1997
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corpora1-504-2860x10679ejev0sg00sc5 s dc 6v relayp48d-70-600+8upd66010upd7752ac03eupd7520upa1601upd70208hupd72020upd16503
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