TRANSISTOR S55 Search Results

Contextual Info: Y S55y BFQ67/BFQ67R/BFQ67W Vishay Telefunken Silicon NPN Planar RF Transistor Electrostatic sensitive device. Observe precautions for handling. ^ M Applications Low noise small signal amplifiers up to 2 GHz. This transistor has superior noise figure and associated

KS621K30

Abstract: transistor S56 transistor s55 lem lc 300 KS621 powerex ks62 transistor VCEO 1000V
Contextual Info: POWBÌEX KS621K30 Powerex, Inc., 200 Hillis Street, Youngwood, Pennsylvania 15697-1800 412 925-7272 Single Darlington Transistor Module 300 Amperes/1000 Volts OUTLINE DRAWING Description: The Powerex Single Darlington Transistor Modules are high power devices designed for use in

E67349

Abstract: TLP631 TLP632
Contextual Info: TOSHIBA TLP631JLP632 TOSHIBA PHOTOCOUPLER GaAs IRED & PHOTO-TRANSISTOR TLP631, TLP632 PROGRAMMABLE CONTROLLERS AC/DC-INPUT MODULE SOLID STATE RELAY The TOSHIBA TLP631 and TLP632 consist of a photo-transistor optically coupled to a gallium arsenide infrared emitting diode in a

FJY3005R

Abstract: FJY4005R transistor s55
Contextual Info: FJY4005R tm PNP Epitaxial Silicon Transistor Features • Switching circuit, Inverter, Interface circuit, Driver Circuit • Built in bias Resistor R1=4.7KΩ, R2=10KΩ • Complement to FJY3005R Eqivalent Circuit C C S55 E B E B SOT - 523F Absolute Maximum Ratings *

CM25-28

Abstract: UMI125 UMIL25 UM1L25 UM1L2 DDD1117 UMIL60 Scans-00115691
Contextual Info: 0 1 8 2 9 9 8 ACRI AN INC DE DDDlli? S T —2 3 - S 3 S55HI2IKS80 CRIAN GENERAL DESCRIPTION UMIL25 The UMIL25 is an internally matched UHF transistor designed for the 200-500 MHz frequency range. It may be operated in Class A, AB or C and features gold thin film

C160120

Abstract: transistor 2SK2750 2SK2750
Contextual Info: TOSHIBA 2SK2750 TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE tt-MOSV 2SK2750 HIGH SPEED, HIGH CURRENT SWITCHING APPLICATIONS CHOPPER REGULATOR, DC-DC CONVERTER AND MOTOR DRIVE APPLICATIONS INDUSTRIAL APPLICATIONS Unit in mm 10 ± 0.3 r •

2-10P1B

Abstract: 2SK2661 L122M l67c
Contextual Info: T O S H IB A 2SK2661 TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE tt-M O SV 2SK2661 HIGH SPEED, HIGH CURRENT SWITCHING APPLICATIONS INDUSTRIAL APPLICATIONS U nit in mm CHOPPER REGULATOR, DC-DC CONVERTER AND MOTOR DRIVE APPLICATIONS 03 .610.2

2N7221 JANTX

Abstract: IQR 2400 2N7221 IRFM340 JANTXV2N7221
Contextual Info: Data Sheet No. PD-9.490C INTERNATIONAL RECTIFIER \ I & R \ REPETITIVE AVALANCHE RATED AND dv/dt RATED HEXFET TRANSISTOR N-CHANNEL IRFM34Q 2 INI7221 JANTX2N7221 JANTXV2N7221 [REF: MIL-S-195QO/596 400 Volt, 0.55 Ohm HEXFET Product Summary The HEXFET® technology is the key to International

Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Darlington Transistor MMBT6427LT1 NPN Silicon COLLECTOR 3 Motorola Preferred Device EMITTER 2 MAXIMUM RATINGS Sym b ol Value Unit C ollector-E m itter Voltage v CE O 40 Vdc C o llector-B ase Voltage VC BO 40 Vdc E m itter-B ase Voltage

2SC3605

Contextual Info: T O S H IB A 2SC3605 TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE 2SC3605 Unit in mm V H F- U H F BAND LO W NOISE AM PLIFIER APPLICATIONS . 5.1 M AX. FEATURES : • Low Noise Figure, High Gain • NF = l.ldB, |S 2lel 2 = lOdB f = 1GHz 0.45 0.55 M AX.

Contextual Info: T O S H IB A 2SB1375 TOSHIBA TRANSISTOR SILICON PNP TRIPLE DIFFUSED TYPE 2 S B 1 375 Unit in mm AUDIO FREQUENCY PO W ER AM PLIFIER • 10 ì 0.3 Low Saturation Voltage : V c e sat = —1-5V (Max.) (IC = - 2 A , IB = —0.2A) High Power Dissipation : P q = 25W (Tc = 25°C)

TC-8008

Abstract: 2SJ355 xz43
Contextual Info: 7 s— 9 • 3/ - h NEC M O S ^ f ^ Jü K 7 > V * ^ M O S Field Effect Transistor 2SJ355 4 ^ 1/ M O S FET a s ja s s iiP ^ + ^ -M s m /io s f e t z \ * 1C <t 5 ¡ S i g i g l i if s m è & ' X Y -y * > f m * - ? t * Ü P ° P B + > g f i L * rf i < ü t è : mm)

EB-230

Abstract: PA603T mpa603t 048164 IC830
Contextual Info: MOS MWRlto MOS Field Effect Transistor «PA603T U MOS F E T 6 fc> 2 0 S&) P ¿¿PA603T (ä, M OS F E T £ 2 H Jj& f ijl Ltz l ~ £ f 7f £ H I (^ -fï ‘ mm) & 4# o SC-59 ¿[p] L'+f'f Xcos'?"/ Y — 'si MOS F E T £ 2 H i& f lji 0.95 o ¿/PA602T t 3 > 7 ° ij / 's 9 ') T"i£ffl^Tit£

s0t23

Abstract: LNA SOT23-6 AX2232 MAX2611 SOT23-6 AM oscillator 6pin 63 sot23 6pin AB SOT23-10
Contextual Info: Build Your Radio with Maxim’s Wide • Add Flexibility to Your New or Existing Design • Save Board Space over Discrete Designs but Maintain Design Flexibility • Achieve Faster Time-to-Market wideband DOW N' G A IN ' <S55&cc DUAL IF V C O BUFFER Low-Noise Amplifiers

2SK43 transistor

Abstract: smd transistor m29 sot343 UXA23465 Motorola transistor smd marking codes walkie-talkie transceiver diagram UXA23476 diode SMD WL sot23 BF862 AM LNA uaf3000 2SK163
Contextual Info: th 1 ed ition 10 th editio n t h 1 e d th i t i o n RF manual 10 edition 10 Application and design manual for RF products TH September 2007 www.nxp.com 2007 NXP B.V. All rights reserved. Reproduction in whole or in part is prohibited without the prior written

circuit diagram of GSM based home automation system

Abstract: BF1118 MOBILE jammer GSM 1800 MHZ circuit diagram bgu7051 BLF578 CMMB antenna MRF6V2300N 300w power amplifier circuit diagram BF256B spice model maxim DVB
Contextual Info: RF Manual 14th edition Application and design manual for High Performance RF products May 2010 2010 NXP B.V. copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. No liability will be accepted by

diode varicap BB 112

Abstract: SMD TRANSISTOR MARKING 02N toshiba smd marking code transistor SOT23-6 MARKING 02n smd code marking NEC rf transistor transistor smd marking CODE Wb smd transistor m29 sot343 UXA23465 RF LNB C band chipset smd transistor M26 sot23
Contextual Info: RFマニュアル第10版 RF製品用のアプリケーションおよび設計マニュアル 2007年9月 はじめに 『RFマニュアル』のスペシャル・エディションへようこそ。 『RFマニュアル』も今回で10版 となりました。

BC548 TRANSISTOR REPLACEMENT

Abstract: TYN612 pin diagram 1n4007 smd, toshiba S0817MH TYN604 scr pin diagram kmz51 compass TRANSISTOR S1A 64 smd toshiba l 300 laptop motherboard circuit diagram JFET TRANSISTOR REPLACEMENT GUIDE j201 replacements for transistor NEC D 587
Contextual Info: 5.2 5.4 5.46 5.124 5.130 5.130 5.140 5.180 Introduction Diodes & Rectifiers Transistors Triacs,Thyristors and Diacs Sensors Cross Reference General Application discretes Cross Reference Power discretes Cross Reference RF discretes Discrete Components 5.1 Introduction

Motorola transistor smd marking codes

Abstract: walkie-talkie transceiver diagram BFM505 BF256B spice model 2SK163 UAF3000 BGO807C FET marking code 365 marking code M2 SOT23 SOT56
Contextual Info: RF Manual 8 edition th Application and design manual for RF products June 2006 date of release: June 2006 document order number: 9397 750 15589 Henk Roelofs,Vice President & General Manager RF Products Introduction Every edition we challenge ourselves to improve our RF manual. This 8th edition is no exception.

Audio Power Amplifier MOSFET TOSHIBA

Abstract: P-Channel Depletion Mosfets RF MODULE CIRCUIT DIAGRAM dect gaas fet vhf uhf varicap diode Laser Diode for dvd 500 mW 2SK508 J113 equivalent BGY88/04 MOTOROLA N CHANNEL POWER MOS FET TRANSISTORS
Contextual Info: Semiconductors RF Manual 6th edition Application and design manual for RF products May 2005 date of release: May 2005 document order number: 9397 750 15125 Semiconductors Henk Roelofs,Vice President & General Manager RF Products Introduction The RF Manual covers a broad variety of material and many aspects about RF systems. It shows

2SK163 spice model

Abstract: BF256B spice model bf245b spice model TRANSISTOR SMD wb BGY88 spice model bf1202 Microwave GaAs FET catalogue 2sk163 BSS83 spice model BAW 62 SOT23
Contextual Info: RF Manual 7 edition th Application and design manual for RF products November 2005 date of release: November 2005 document order number: 9397 750 15371 Henk Roelofs,Vice President & General Manager RF Products Introduction Welcome to the 7th edition of our RF Manual. We knew that the new focus of applicationbased information with fully interactive operation would pay off, but the appreciation expressed

DS75450N

Abstract: DS55451 DS55453 DS75450 DS75453 N14A
Contextual Info: S3 National M iA Semiconductor DS55451/2/3/4, DS75450/1/2/3/4 Series Dual Peripheral Drivers G e n e ra l D e sc rip tio n The DS75450 series of dual peripheral drivers is a family of

Contextual Info: Semiconductor National DS55451/2/3/4, DS75451/2/3/4 Series Dual Peripheral Drivers General Description Features The DS7545X series of dual peripheral drivers is a family of versafile devices designed for use in systems that use TTL

2SK2543

Contextual Info: TOSHIBA 2SK2543 SILICON N CHANNEL MOS TYPE tt-MOSV SWITCHING REGULATOR APPLICATIONS 10 ±0.3 r Low Drain-Source ON Resistance : Rd S (ON) = 0.750 (Typ.) High Forward Transfer Admittance : |Yfs| = 7.0S (Typ.) Low Leakage Current : iDgg^lOO/^A (Max.) (V]}g = 500V)