TRANSISTOR S52 Search Results

KS624530

Contextual Info: KS624530 Powerex, Inc., 200 Hillis Street, Youngwood, Pennsylvania 15697-1800 412 925-7272 SinQlB DdtHflQtOH Transistor Module 300 Amperes/600 Volts OUTLINE DRAWING Description: The Powerex Single Darlington Transistor Modules are high power devices designed for use in

RCA H 541

Abstract: 2T312 2N2654 AS218 transistor gex 74a diode germanium 1n283 K3004 TFK diode ac132 TI-483
Contextual Info: $ 1.50 Cat. No. SSH-6 /U*A TRANSISTOR SUBSTITUTION HANDBOOK by The Howard W. Sams Engineering Staff HOWARD W. SAMS & CO., INC. THE BOBBS-MERRILL COMPANY, INC. Indianapolis • New York SIXTH EDITION FIRST PRINTING — FEBRUARY, 1965 TRANSISTOR SUBSTITUTION HANDBOOK

K638

Abstract: transistor S52 BUK638 DIODE 1000a fet 1000A
Contextual Info: Philips Com ponents Data sheet status Prelim inary specification date of issue March 1991 BUK638-1OOOA/B PowerMOS transistor Fast recovery diode FET PHILIPS INTERNATIONAL GENERAL DESCRIPTION N -channel enhancem ent m ode field-effect pow er transistor in a

transistor s49

Abstract: KS624530 powerex ks62
Contextual Info: m H B XX KS624530 Powerex, Inc., 200 Hillis Street, Youngwood, Pennsylvania 15697-1800 412 925-7272 Single Darlington Transistor Module 300 Amperes/600 Volts OUTLINE DRAWING Description: The Powerex Single Darlington Transistor Modules are high power devices designed for use in

TIS25

Abstract: KS52 KS524505 tis25c S-10 S-11 S-12
Contextual Info: KS524505 Powerex, inc., 200 Hillis Street, Youngwood, Pennsylvania 15697-1800 412 925-7272 S in Q lQ D B iH n C ftO n Transistor Module 50 Amperes/600 Volts O U T L I N E DRAWING Description: The Powerex Single Darlington Transistor Modules are high power

transistor T K 2056

Abstract: K 2056 transistor transistor K 2056
Contextual Info: SANYO SEMICONDUCTOR 12E CORP D | 7 T ci 7 D 7 t 1 0 0 0 S S 0 0 g 32S C 4256 SS2SC4271 Silicon Transistor Silicon Transistor ' High Voltage Switching Applications Very High-Oefinrtion CR T Display Applications JEDEC: T 022 0 package JEDEC: T0126 package High breakdown voltage

BUK543

Abstract: BUK543-100A BUK543-100B
Contextual Info: f . - — - - - . — - PHILIPS INTERNATIONAL bSE D B - 711065b D D b 4 m Philips Semiconductors - TD7 • PHIN Product Specification PowerMOS transistor

Contextual Info: FJY4002R tm PNP Epitaxial Silicon Transistor Features • Switching circuit, Inverter, Interface circuit, Driver Circuit • Built in bias Resistor R1=10KΩ, R2=10KΩ • Complement to FJY3002R Equivalent Circuit C C S52 E B E B SOT 523F Absolute Maximum Ratings *

FJY3002R

Abstract: FJY4002R
Contextual Info: FJY4002R tm PNP Epitaxial Silicon Transistor Features • Switching circuit, Inverter, Interface circuit, Driver Circuit • Built in bias Resistor R1=10KΩ, R2=10KΩ • Complement to FJY3002R Eqivalent Circuit C C S52 E B E B SOT - 523F Absolute Maximum Ratings *

S53 MARKING

Contextual Info: FJY4002R tm PNP Epitaxial Silicon Transistor Features • Switching circuit, Inverter, Interface circuit, Driver Circuit • Built in bias Resistor R1=10KΩ, R2=10KΩ • Complement to FJY3002R Equivalent Circuit C C S52 E B E B SOT - 523F Absolute Maximum Ratings *

FJY3002R

Abstract: FJY4002R
Contextual Info: FJY4002R tm PNP Epitaxial Silicon Transistor Features • Switching circuit, Inverter, Interface circuit, Driver Circuit • Built in bias Resistor R1=10KΩ, R2=10KΩ • Complement to FJY3002R Equivalent Circuit C C S52 E B E B SOT - 523F Absolute Maximum Ratings *

Contextual Info: WWEREX Powerex, Inc., 200 Hillis Street, Youngwood, Pennsylvania 15697-1800 412 925-7272 KS624530 Single Darlington Transistor Module 300 Amperes/600 Volts Absolute Maximum Ratings, Tj = 25 °C unless otherwise specified Ratings Symbol KS624530 Units Ti

Contextual Info: FJY4002R PNP Epitaxial Silicon Transistor Features • Switching Circuit, Inverter, Interface circuit, Driver Circuit • Built-in Bias Resistor R1 = 10 kΩ, R2 = 10 kΩ • Complement to FJY3002R Application • Switching Application (Integrated Bias Resistor)

Contextual Info: FJY4002R PNP Epitaxial Silicon Transistor Features • Switching Circuit, Inverter, Interface circuit, Driver Circuit • Built-in Bias Resistor R1 = 10 kΩ, R2 = 10 kΩ • Complement to FJY3002R Application • Switching Application (Integrated Bias Resistor)

S-5251

Contextual Info: 10A LDO 5-Pin Adjustable Linear Regulator Description This new very low dropout regula­ tor is designed to power the next generation of advanced m icropro­ cessor. To achieve very low dropout, the internal pass transistor is powered separately from the con­

LDS274

Abstract: 23 PIN TFT MOBILE DISPLAY 8bit RGB to 18bit parallel LCD RGB 18 bit 760K G240 8080 rgb interfaces transistor 8080
Contextual Info: PRODUCT OVERVIEW LDS274 LDS274 176 RGB x 240 262k Color TFT LCD Driver The LDS274 is a low power single chip 262k Color Thin Film Transistor (TFT) LCD Driver with Integrated Controller for small panel color displays used in next generation wireless handsets and mobile consumer

Contextual Info: SPICE Device Model SUP/SUB75P03-08 Vishay Siliconix P-Channel Enhancement-Mode Transistor CHARACTERISTICS • P-Channel Vertical DMOS • Macro Model Subcircuit Model • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range

TP0202T

Contextual Info: TP0202T P-Channel Enhancement-Mode MOSFET Transistor Product Summary V BR DSS Min (V) –20 20 rDS(on) Max (W) VGS(th) (V) ID (A) 1.4 @ VGS = –10 V –1.3 to – 3 V –0.41 3.5 @ VGS = –4.5 V –1.3 to – 3 V –0.27 Features Benefits Applications D

c5088 transistor

Abstract: transistor C3207 TLO84CN sec c5088 IN5355B D2817A C3207 transistor toshiba f630 TLO81CP MC74HC533N
Contextual Info: Transistor - Diode Cross Reference - H.P. Part Numbers to JEDEC Numbers Part Num. 1820-0225 1820-0240 1820-0352 1820-1804 1821-0001 1821-0002 1821-0006 1850-0062 1850-0064 1850-0075 1850-0076 1850-0093 1850-0099 1850-0126 1850-0137 1850-0150 1850-0151 1850-0154

ic ca 747

Contextual Info: 3A LDO 5-Pin Adjustable Linear Regulator D escrip tio n This new very low dropout regula­ tor is designed to pow er the next generation of advanced m icropro­ cessors. To achieve very low dropout, the internal pass transistor is powered separately from the con­

VP2410L

Contextual Info: VP2410L P-Channel Enhancement-Mode MOSFET Transistor Product Summary V BR DSS Min (V) rDS(on) Max (W) VGS(th) (V) ID (A) –240 10 @ VGS = –4.5 V –0.8 to –2.5 –0.18 Features Benefits Applications D D D D D D D D D D D Drivers: Relays, Solenoids, Lamps,

TP0202T

Contextual Info: TP0202T P-Channel Enhancement-Mode MOSFET Transistor Product Summary V BR DSS Min (V) –20 rDS(on) Max (W) VGS(th) (V) ID (A) 1.4 @ VGS = –10 V –1.3 to – 3 V –0.41 3.5 @ VGS = –4.5 V –1.3 to – 3 V –0.27 Features Benefits Applications D D D

VP2410L

Contextual Info: VP2410L P-Channel Enhancement-Mode MOSFET Transistor Product Summary V BR DSS Min (V) rDS(on) Max (W) VGS(th) (V) ID (A) –240 10 @ VGS = –4.5 V –0.8 to –2.5 –0.18 Features Benefits Applications D D D D D D D D D D D Drivers: Relays, Solenoids, Lamps,

70221

Abstract: mosfet vq3001p VQ3001J VQ3001P
Contextual Info: VQ3001J/3001P N-/P-Ch. Enhancement-Mode MOSFET Transistor Arrays Product Summary V BR DSS Min (V) rDS(on) Max (W) VGS(th) (V) ID (A) N-Channel 30 1 @ VGS = 12 V 0.8 to 2.5 0.85 P-Channel –30 2 @ VGS = –12 V –2 to –4.5 –0.6 Features Benefits Applications