TRANSISTOR RJP Search Results

2SA2160

Abstract: 2SA2149 2SC6005 RQW200 rdx100n45 RQA200N03 rqw200n03 RLA130N03 rdx*100n45 2sc6027
Contextual Info: 2005 Transistor New Products Ver.1 MOS FET Series Low VCE sat Miniature Digital Transistor Series Low VCE(sat) Transistor Series Endured Discharge Voltage/ High Speed Switching/ Low Noise Transistor Series Muting Transistor Series MOS FET TUMT/TSMT Series

rjh3047

Abstract: rjh3077 rjp3047 RJH3047DPK rjp3049 rjp6065 rjp3053 RJP3042 smd code FX mosfet RJP6055
Contextual Info: 2007.12 Renesas Discrete General Catalog Transistor/Diode/ Triac/ Thyristor www.renesas.com Triacs and Thyristors Small-Signal Transistors Power Transistor Renesas discrete devices: extending the limits Advanced electronic equipment requires larger data processing

2SK1198

Abstract: ss1212 ScansUX881 nec 2501 LD
Contextual Info: NEC IM-CHANNEL MOS FIELD EFFECT POWER TRANSISTOR ELECTRON DEVICE 2SK1198 DESCRIPTION The 2SK1198 Transistor is N-channel designed for MOS switching Field Effect Power power supplies, PACKAGE DIM EN SIO N S AC in millimeters inches Adapters. FEATURES •

st2222a

Contextual Info: Central Semiconductor Corp. CM ST2222A SUPER-MINI NPN SILICON TRANSISTOR DESCRIPTION: The CENTRAL SEMICONDUCTOR CMST2222A type is an NPN silicon transistor manufactured by the epitaxial planar process, epoxy molded in a super-mini surface mount package, designed for small signal general

2SK1198

Contextual Info: Notice: You cannot copy or search for text in this PDF file, because this PDF file is converted from the scanned image of printed materials._ P1 98.2 NEC IM-CHANNEL MOS FIELD EFFECT POWER TRANSISTOR ELECTRON DEVICE 2SK1198 DESCRIPTION The 2SK1198 Transistor

p733

Contextual Info: TOSHIBA TLP731,TLP732 TOSHIBA PHOTOCOUPLER GaAs IRED & PHOTO-TRANSISTOR TI P731 TI P733 m mg m • ■ w ■ « v OFFICE MACHINE U n it in mm HOUSEHOLD USE EQUIPMENT SOLID STATE RELAY SVViTCHiNG PO W E R SUPPLY 6 ti 5 i i 4 r? ■ 0.6 The T O S H IB A TLP731 and TLP732 consist of a photo-transistor

c103 TRANSISTOR equivalent

Abstract: C102 M transistor Solitron Devices c103 TRANSISTOR c103 npn
Contextual Info: 8368602 SOLITRON DEVICES INC 95D 02 89 3 1 fl3hfibUd OaOEÖTB D 0 I rJpwMËeon • MEDIUM TO HIGH VOLTAGE, FAST SWITCHING CHIP N U M BER Devices. Inc. PIMP EPITAXIAL PLANAR POWER TRANSISTOR* * FORMERLY 69 CONTACT METALLIZATION Base and emitter: > 30,000 A Aluminum

RJP63k2

Abstract: rjp63f3 rjp30e2 RJP30H2 RJJ0319DSP rjp63f RJP30H3 rjj0319 BCR1AM-12A equivalent RJJ0606
Contextual Info: 2011.01 Renesas Discrete Transistor / Diode / Triac / Thyristor General Catalog www.renesas.com Power MOSFETs Thyristors/TRIACs Solutions from the new Renesas. Reducing the power consumption of the most advanced applications. Bipolar Transistors for Switching

RJJ0319DSP

Abstract: BCR8PM equivalent RJP30H2 N0201 rjj0319 NP109N055PUJ rjk5020 RJP30E2DPP NP75N04YUG lg washing machine circuit diagram
Contextual Info: 2012.01 Renesas Discrete General Catalog Transistor / Diode / Triac / Thyristor General Catalog www.renesas.com Power MOSFETs Thyristors/TRIACs IGBTs Bipolar Transistors for Switching Amplification Transistors Product Numbers Applications Diodes What gives rise to this sort of encounter?

SOL-18pin

Contextual Info: TOSHIBA TD62783J84AP/AFW TOSHIBA BIPOLAR DIGITAL INTEGRATED CIRCUIT SILICON MONOLITHIC TD62783AP, TD62783AFW, TD62784AP, TD62784AFW 8CH HIGH-VOLTAGE SOURCE DRIVER The TD62783AP/AFW Series are comprised of eight source current Transistor Array. These drivers are specifically designed for fluorescent

Contextual Info: TO SHIBA TD62318AP/AF TOSHIBA BIPOLAR DIGITAL INTEGRATED CIRCUIT SILICON MONOLITHIC TD62318AP, TD62318AF 4CH LOW INPUT ACTIVE HIGH-CURRENT DARLINGTON SINK DRIVER The TD62318AP, TD62318AF are non-inverting transistor array which are comprised of four NPN darlington output

transistor x 13002

Contextual Info: TO SHIBA TD62318AP/AF TOSHIBA BIPOLAR DIGITAL INTEGRATED CIRCUIT SILICON MONOLITHIC TD62318AP, TD62318AF 4CH LOW INPUT ACTIVE HIGH-CURRENT DARLINGTON SINK DRIVER The TD62318AP, TD62318AF are non-inverting transistor array which are comprised of four NPN darlington output

ksd 302 250v, 10a

Abstract: irf 5630 transistor 2SB 367 IRF 3055 AC153Y transistor ESM 2878 TIP 43c transistor 2sk116 bf199 bd643
Contextual Info: 5 transistor 1 A-Z datenlexikon data dictionary lexique de donnees enciclopedia dati lexicon de datos vergleichstabelle comparison table table d'equivalence tabella comparativa tabla comparativa ISBN 3-927486-00-0 Dieses Buch ist hinterlegt und urheberrechllich geschutzt. Alle

SOL-18pin

Abstract: SOL18-P-300-1
Contextual Info: TOSHIBA TD62783J84AP/AFW TOSHIBA BIPOLAR DIGITAL INTEGRATED CIRCUIT SILICON MONOLITHIC TD62783AP, TD62783AFW, TD62784AP, TD62784AFW 8CH HIGH-VOLTAGE SOURCE DRIVER The TD62783AP/AFW Series are comprised of eight source current Transistor Array. These drivers are specifically designed for fluorescent

transistor RJp 30

Abstract: R01J
Contextual Info: Philips Semiconductors Product specification PowerMOS transistor Logic level TOPFET BUK110-50DL For maintenance only. Do not use for design-in. DESCRIPTION QUICK REFERENCE DATA Monolithic temperature and overload protected logic level power MOSFET in a 3 pin plastic surface

Contextual Info: TO SHIBA TD62308BP-1/BF TOSHIBA BIPOLAR DIGITAL INTEGRATED CIRCUIT SILICON MONOLITHIC TD62308BP-1, TD62308BF 4ch LOW INPUT ACTIVE HIGE-CURRENT DARUNGTON SINK DRIVER The TD62308BP-1 and TD62308BF are non-inverting transistor array which are comprised of four NPN

Contextual Info: TO SHIBA TD62308BP-1/BF TOSHIBA BIPOLAR DIGITAL INTEGRATED CIRCUIT SILICON MONOLITHIC TD62308BP-1, TD62308BF 4ch LOW INPUT ACTIVE HIGE-CURRENT DARUNGTON SINK DRIVER The TD62308BP-1 and TD62308BF are non-inverting transistor array which are comprised of four NPN

transistor RJp

Contextual Info: 2SJ168 TO SHIBA TOSHIBA FIELD EFFECT TRANSISTOR HIGH SPEED SWITCHING APPLICATIONS SILICON P CHANNEL MOS TYPE 2 S J 1 68 Unit in mm ANALOG SWITCH APPLICATIONS + 0.5 2.5-0.3 INTERFACE APPLICATIONS • • • Excellent Switching Time : ton = 14ns Typ. High Forward Transfer Admittance

BUK455-500B

Abstract: BJE 80 diode T0220AB
Contextual Info: N AP1ER P H I L I P S / D I S C R E T E bTE D • bbS313 1 DOBDbLiD 76T H A P X Philips Semiconductors Product Specification PowerMOS transistor GENERAL DESCRIPTION PINNING - T 0220A B SYMBOL PARAMETER Drain-source voltage Drain current DC Total power dissipation

TLP321

Contextual Info: TOSHIBA TLP321 ,TLP321-2,TLP321-4 TOSHIBA PHOTOCOUPLER GaAs IRED & PHOTO-TRANSISTOR T I P 3mm 3 1m g Tm I P 3 3 1 - 3 g Tm I P 3 3 1 - J • ■ ■ w ■ «r ■ ■ PROGRAMMABLE CONTROLLERS U nit in mm < 3 DC-OUTPUT MODULE TLP321 TELECOMMUNICATION rL I L2k.

2SK1060

Abstract: k1060 2SK1060Z 2SK1060-Z
Contextual Info: Notice: You cannot copy or search for text in this PDF file, because this PDF _ file is converted from the scanned image of printed materials._ P1 98.2 N-CHANNEL MOS FIELD EFFECT POWER TRANSISTORS 2 S K 1 0 6 0 ,2S K1060-Z DESCRIPTION The 2SK1060, 2SK1060-Z are N-Channel MOS Field Effect Power Transistor designed for solenoid,

Contextual Info: TOSHIBA CNY17-2,CNY17-3,CNY17-4 TOSHIBA PHOTOCOUPLER r N v Y• 1■ 7« - 3 m g T GaAs IRED & PHOTO-TRANSISTOR N 7 - ^ m 'm Ym 1m m mm g T N m Ym 1m m7 - d m AC LINE/DIGITAL LOGIC ISOLATOR DIGITAL LOGIC/DIGITAL LOGIC ISOLATOR TELEPHONE LINE RECEIVER TWISTED PAIR LINE RECEIVER

2SK1060

Abstract: 2SK1060-Z K1060 2SK1060Z ScansUX882
Contextual Info: N-CHANNEL MOS FIELD EFFECT POWER TRANSISTORS 2 S K 1 0 6 0 ,2S K 1 0 6 0 -Z D E S C R IP T IO N The 2S K 10 60, 2S K 10 60-Z are N-Channel MOS Field E ffect Power Transistor designed for solenoid, m otor and lamp driver. FEATURES • 4 V Gate Drive — Logic level —

TIPL774

Abstract: P6019 P6020 lZ-300 P6042 TIP41 K041 TIP41 Texas Instruments NPN Transistor 30A 400V
Contextual Info: TEXAS I NS TR -COPTO} 8961726 TEXAS De J IN S T R O P T O 0D37Cm 62 C 3 7 0 9 1 r TIPL774 N-P-N DARLINGTON-CONNECTED SILICON POWER TRANSISTOR O C T O B E R 1 9 8 2 - R E V IS E D O C T O B E R 1 9 8 4 T-3 3 - 2 9 20 A Continuous Collector Current 150 W at 50°C Case Temperature