TRANSISTOR R02 Search Results

BLF177

Abstract: 8830 transistor transistor marking code HF
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET M3D060 BLF177 HF/VHF power MOS transistor Product specification Supersedes data of 2003 Jul 21 2004 Dec 17 Philips Semiconductors Product specification HF/VHF power MOS transistor FEATURES BLF177 PIN CONFIGURATION • High power gain

CPC1303

Abstract: EIA-481-2 CPC1303GRTR
Contextual Info: CPC1303 Single-Transistor Optocoupler Parameter Breakdown Voltage - BVCEO Current Transfer Ratio Saturation Voltage Input Control Current Rating 30 200 0.5 0.2 Description Units VP % V mA The CPC1303 is a unidirectional input optocoupler with a single-transistor output, which uses optically

CPC1001N

Abstract: CPC1001
Contextual Info: CPC1001N Unidirectional Input, Single-Transistor Output Optocoupler Breakdown Voltage BVCEO Current Transfer Ratio Min Saturation Voltage Input Control Current CPC1001N 30 100 0.3 0.2 Units V % V mA CPC1001N is a unidirectional input optocoupler with a single transistor output. Current transfer ratios

Contextual Info: Philips Semiconductors Objective specification NPN Silicon planar epitaxial R02731B20W microwave power transistor FEATURES • Suitable for short and medium pulse application up to 100 jj.s pulse width, 10% duty factor • Diffused emitter ballasting resistors

b1009 transistor

Abstract: B1009 ba656 ba9700-series BA6566
Contextual Info: Regulator ICs Switching regulator for DC-DC converters BA9700A/BA9700AF/BA97OOAFV BA9700A, BA9700AF and BA9700AFV are switching regulators that use a pulse width modulation PWM system. They use a transistor switch to stabilize the output voltage. By the use of the transistor, power loss is decreased, fluctnation efficiency is improved, and the circuit is made more

transistor 1BT

Abstract: transistor 1BT 86 1bt npn common base amplifier circuit designing npn 1bt 1bt transistor
Contextual Info: Philips Semiconductors Objective specification NPN silicon planar epitaxial microwave power transistor FEATURES R02731B50W QUICK REFERENCE DATA Microwave performance up to Tmb = 25 °C in a common base class C narrowband amplifier. • Suitable for short and medium

LT 5251

Abstract: 2s87 a1t transistor TRANSISTOR A1t Y500200 t430 transistor transistor bc 541 5251 F ic T440 2SB564
Contextual Info: SEC j Silicon Transistor 2SB564 P N P X t" 2 * -> 7 J U fi '> 'J □ > h =y > v 7- H PNP Silicon Epitaxial Transistor Audio Frequency Power Amplifier o { S M M n i± f m y ^ B / P A C K A G E D IM EN SIO N S * Unit : mm ¿ 7 - fc.y v t , 0 2 S D 4 7 1 1 ^ > 7 °') * >

Contextual Info: Philips Semiconductors Objective specification NPN silicon planar epitaxial * - * microwave power transistor R02731B20W FEA TUR ES Q U IC K R E F E R E N C E DATA • Suitable for short and medium Microwave performance up to T mb = 25 °C in a common base class C

LDA102

Abstract: EIA-481-2 J-STD-033
Contextual Info: LDA102 Optocoupler, Unidirectional Input Single-Transistor Output Parameter Breakdown Voltage Current Transfer Ratio Minimum Saturation Voltage Input Control Current Rating 30 50 0.5 1 Description Units VP % V mA The LDA102 is a unidirectional-input optocoupler

LDA102

Contextual Info: LDA102 Optocoupler, Unidirectional Input Single-Transistor Output Parameter Breakdown Voltage Current Transfer Ratio Minimum Saturation Voltage Input Control Current Rating 30 50 0.5 1 Description Units VP % V mA The LDA102 is a unidirectional-input optocoupler

Contextual Info: Philips Semiconductors Objective specification NPN silicon planar epitaxial microwave power transistor FEATURES • Suitable for short and medium pulse application up to 100 us pulse width, 10% duty factor • Diffused emitter ballasting resistors improve ruggedness

Contextual Info: Philips Semiconductors Objective specification NPN silicon planar epitaxial microwave power transistor FEATURES • Suitable for short and medium pulse application up to 100 us pulse width, 10% duty factor • Diffused emitter ballasting resistors improve ruggedness

K 3053 TRANSISTOR

Abstract: k 246 transistor
Contextual Info: Philips Semiconductors Objective specification NPN silicon planar epitaxial microwave power transistor FEATURES • Suitable for short and medium pulse application up to 100 p,s pulse width, 10% duty factor • Diffused emitter ballasting resistors improve ruggedness

25CC

Abstract: MJE18206 MJF18206 J280 LB013
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA M JE18206 M JF18206 D esigner’s Data Sheet SWITCHMODE ™NPN Bipolar Power Transistor for Electronic Light B allast and Switching Power Supply Applications POWER TRANSISTORS 8 AMPERES 1200 VOLTS 40 and 100 WATTS

EIA-481-2

Abstract: LDA202
Contextual Info: LDA202 Dual Bidirectional Input Single Transistor Output Optocoupler Parameter Breakdown Voltage - BVCEO Current Transfer Ratio - CTR Typ Saturation Voltage - VCE(sat) Input Control Current - IF Rating 30 300 0.5 1 Units VP % V mA Description LDA202 is a dual bidirectional input optocoupler with

Contextual Info: LDA203 Dual Unidirectional Input, Single-Transistor Output Optocoupler Parameter Breakdown Voltage - BVCEO Current Transfer Ratio - CTR Typ Saturation Voltage - VCE(sat) Input Control Current - IF Rating 30 300 0.5 1 Description Units VP % V mA LDA203 is a dual unidirectional optocoupler with

EIA-481-2

Abstract: LDA200 LDA200S LDA200STR
Contextual Info: LDA200 Dual Bidirectional Input Single Transistor Output Optocoupler Parameter Breakdown Voltage - BVCEO Current Transfer Ratio - CTR Typ Saturation Voltage - VCE(sat) Input Control Current - IF Rating 30 300 0.5 1 Units VP % V mA Description LDA200 is a dual bidirectional input optocoupler with

LDA211

Contextual Info: LDA211 Dual Unidirectional Input Darlington Transistor Output Optocoupler Parameter Breakdown Voltage - BVCEO Current Transfer Ratio CTR typical Saturation Voltage - VCE(sat) Input Control Current - IF Rating 30 8500 Units VP % 1 1 V mA Description LDA211 is a dual unidirectional input optocoupler

Contextual Info: LDA210 Dual Bidirectional Input Darlington Transistor Output Optocoupler Perameter Breakdown Voltage - BVCEO Current Transfer Ratio CTR Typical Saturation Voltage - VCE (sat) Input Control Current - IF Rating 30 8500 Units VP % 1 1 V mA Description LDA210 is a dual bidirectional input optocoupler with

CGH27015S

Contextual Info: PRELIMINARY CGH27015S 15 W, 2300-2900 MHz, 28V, GaN HEMT for WiMAX Cree’s CGH27015S is a gallium nitride GaN high electron mobility transistor designed specifically for 802.16-2004 WiMAX Fixed Access applications. GaN HEMTs offer high efficiency, high gain and wide bandwidth capabilities, which

CGH27015S

Abstract: 003536 54-619 msl 9351 06752
Contextual Info: PRELIMINARY CGH27015S 15 W, 2300-2900 MHz, 28V, GaN HEMT for WiMAX Cree’s CGH27015S is a gallium nitride GaN high electron mobility transistor designed specifically for 802.16-2004 WiMAX Fixed Access applications. GaN HEMTs offer high efficiency, high gain and wide bandwidth capabilities, which

UPC78M24A

Abstract: MPC78M18AHF MPC78M12 UPC78M05 MPC78M15AHF 78m15a MPC78 78M07A
Contextual Info: ¡» m ìa S iiti BIPOLAR ANALOG INTEGRATED CIRCUITS juPC78M00A SERIES THREE TERMINAL POSITIVE VOLTAGE REGULATORS DESCRIPTION ¿¿PC78M00A series are monolithic three terminal positive regulators which employ internally current limiting,therma1 shut down,output transistor safe operating area protection make them essentially indestructible.

HCFT

Abstract: LQ12D011 DH758 D1021 D1022 D1023 D1024 DC AC inverter
Contextual Info: LQ12D011 TFT-LCD Module LCD Data Sheet FEATURES DESCRIPTION • Display Diagonal: 11.8" The SHARP LQ12D011 Color TFT-LCD module is a color active matrix Liquid Crystal Display LCD incorporating amorphous silicon Thin Film Transistor (TFT). The module is composed of a color TFT-LCD

LQ10DX01

Abstract: tcl tv D1024 transistor 11-G02 D1021 D1022 D1023 DF9B-15P-1V DF9B-15S-1V DF9B-21P-1V
Contextual Info: LQ10DX01 TFT-LCD Module LCD Data Sheet FEATURES DESCRIPTION • Display Diagonal: 10.4" The SHARP LQ10DX01 Color TFT-LCD module is an active matrix Liquid Crystal Display LCD incorporating amorphous silicon Thin Film Transistor (TFT). The module is composed of a color TFT-LCD panel,