TRANSISTOR PH 45 V Search Results

Contextual Info: NPN SILICON PLANAR MEDIUM POWER HIGH GAIN TRANSISTOR ISSUE 1 - MAY 94 _ FEATURES * * 45 Volt VCE0 Gain of 400 at lc=1 Am p * Very low saturation voltage APPLICATIO N S * Darlington replacement * Siren Drivers * Battery powered circuits * Motor drivers REFER TO ZTX690B FOR G R A PH S

BFQ290

Abstract: BFQ291
Contextual Info: Prelim inary specification P hilips Sem iconductors -3 3 -S 7 PNP HDTV video transistor PH IL I P S I N T E R N A T I O N A L SbE ]> BFQ290 711Dfl2h 00 45 b7 3 5T7 PINNING FEATURES DESCRIPTION PIN • High breakdown voltages • Low output capacitance 1 collector

Contextual Info: N AMER PHILIPS/DISCRETE bbSB^Bl DDSfiBbR 5T4 « A P X b'lE P Philips Semiconductors Product Specification Silicon Diffused Power Transistor BU2520AF GENERAL DESCRIPTION New generation, high-voltage, high-speed switching npn transistor in a plastic full-pack envelope intended for use in

Contextual Info: N AUER PHILIPS/DISCRETE bbSBPBl DDBabSb bfiB bTE D Philips Semiconductors Product specification Silicon diffused power transistor BU2527AF GENERAL DESCRIPTION New generation, high-voltage, high-speed switching npn transistor in a plastic full-pack envelope intended

BFR91

Abstract: TO50 transistor BFR91 transistor transistor BFR91 300MHZ 800MHZ TO50 package sot37 5v sot37 transistor ph 45
Contextual Info: PLANETA BFR91 The RF Line NPN Silicon High-Frequency Transistor DESCRIPTION The BFR91 is an NPN silicon epitaxial transistor designed for low noise amplifier at VHF, UHF and CATV band. It has dynamic range and good current characteristic. This small-signal plastic transistor offers superior quality and

TO50 transistor

Abstract: BFR91A BFR91A transistor BFR91A transistor datasheet transistor ph 45 SOT-37 300MHZ 800MHZ TO50 package high frequency high power transistor 300mhz
Contextual Info: PLANETA BFR91A The RF Line NPN Silicon High-Frequency Transistor DESCRIPTION The BFR91A is an NPN silicon epitaxial transistor designed for low noise amplifier at VHF, UHF and CATV band. It has dynamic range and good current characteristic. This small-signal p lastic transistor offers superior quality and

Contextual Info: DISCRETE SEMICONDUCTORS Product specification Supersedes data of 1997 Mar 10 Philips Sem iconductors 1999 Apr 23 PHILIPS Philips Semiconductors Product specification NPN medium power transistor BDP31 FEATURES PINNING • High current max. 3 A PIN • Low voltage (max. 45 V).

58W SOT

Abstract: BLW85 ZL18
Contextual Info: N AMER P H I L I P S / D IS C R ET E b ^E D b b S 3 T 31 • 0 0 2 ^ 4 ^ 574 IAPX D L V V O O A H.F./V.H.F. POWER TRANSISTOR N-P-N silicon planar epitaxial transistor intended for use in class-A, B and C operated mobile h.f. and v.h.f, transmitters with a nominal supply voltage of 12,5 V. The transistor is resistance stabilized and

TB222

Abstract: PH smd transistor PH
Contextual Info: August 7, 2012 TB222A Frequency=1-1000MHz Pout=25W Gain=11dB Vds=48Vdc Idq=0.15A Efficiency=30 to 70% GX141 PH: 805 484-4210 FAX:(805)484-3393 1110 Avenida Acaso, Camarillo CA 93012 www.polyfet.com B T 2A A ugst7,201 Gain/Eff vs Fre q: Vds =48V, Idq=0.15A, Pout=20W

Contextual Info: N AUER PHILIPS/DISCRETE b'lE T> • bbS3R31 DDS63b3 07b I Philips Semiconductors Product Specification Silicon Diffused Power Transistor BU2520A GENERAL DESCRIPTION New generation, high-voltage, high-speed switching npn transistor in a plastic envelope intended for use in

BFR93A E

Abstract: BFR93AR-T3 R5 SOT transistor BFR93A transistor npn Epitaxial Silicon zs 35 300MHZ 800MHZ BFR93A BFR93AR BFR93AR-T1
Contextual Info: PLANETA BFR93A/BFR93AR The RF Line NPN Silicon High-Frequency Transistor 1 3 DESCRIPTION The BFR93A/BFR93AR is an NPN silicon epitaxial transistor designed for low noise amplifier at VHF, UHF and CATV band. It has dynamic range and good current characteristic.

BLY93C

Abstract: RF POWER TRANSISTOR NPN vhf 77530 capacitor
Contextual Info: 7 1 1 0 8 2 ti D 0 t.3 t.M7 417 « P H I N bSE D BLY93C P H IL I P S I N T E R N A T I O N A L V.H.F. POWER TRANSISTOR N-P-N silicon planar epitaxial transistor intended fo r use in class-A, B and C operated h.f. and v.h.f. transm itters w ith a nominal supply voltage o f 28 V. The transistor is resistance stabilized and is

mpsa44v

Abstract: MPSA44 bi 370 transistor MPSA45 bi 370 transistor e
Contextual Info: SEMICONDUCTOR TECHNICAL DATA MPSA44/45 EPITAXIAL PLANAR NPN TRANSISTOR HIGH VOLTAGE APPLICATION. FEATURES • High Breakdown Voltage. • Collector Power Dissipation : Pc=625mW. ABSOLUTE MAXIMUM RATINGS Ta=25°C CHARACTERISTIC SYMBOL Collector-Base Voltage

Contextual Info: N AUER PHILIPS/DISCRETE b^E D • bb53R31 002flbi1fl S05 M A P X Philips Semiconductors Product specification Silicon diffused power transistor BU2522AF GENERAL DESCRIPTION New generation, high-voltage, high-speed switching npn transistor in a plastic full-pack envelope intended

BLX93A

Abstract: high power npn UHF transistor BLX93 T-33-07 TRANSISTOR D 471 IEC134 47pH
Contextual Info: PH IL IR-S INTERNATIONAL MIE D Q 71LOä2b GG27àM7 3 B PHIN BLX93A MA IN TE N AN CE TYPE ^ - T -3 3 -Û 7 U.H.F. POWER TRANSISTOR N-P-N silicon planar epitaxial transistor intended for transmitting applications in class-A, B or C with a supply voltage up to 28 V. The transistor is resistance stabilized and is guaranteed to withstand severe

Marking BA SOT89

Contextual Info: DISCRETE SEMICONDUCTORS BITÂ S y i I T PXTA92 PNP high-voltage transistor Product specification Supersedes data of 1997 Jun 20 Philips Sem iconductors 1999 Apr 29 PHILIPS Philips Semiconductors Product specification PNP high-voltage transistor PXTA92 FEATURES

BF0235

Abstract: BF0235A BF023
Contextual Info: DISCRETE SEMICONDUCTORS BITÂ S y i I T BF0235A NPN video transistor Product specification Supersedes data of 1997 Oct 02 Philips Sem iconductors 1998 Oct 06 PHILIPS Discrete Semiconductors Product specification NPN video transistor BFQ235A FEATURES DESCRIPTION

Contextual Info: DISCRETE SEMICONDUCTORS BITÂ S y i I T MPSA44 NPN high-voltage transistor Product specification Supersedes data of 1998 Nov 26 Philips Sem iconductors 1999 Apr 27 PHILIPS Philips Semiconductors Product specification NPN high-voltage transistor MPSA44 FEATURES

BLX93A

Contextual Info: PHILIR-S INTERNATIONAL MIE D 7110flEb GGSTÖM? 3 BIPHIN BLX93A MAINTENANCE TYPE ' -r- 3 3 - 0 7 U.H.F. POWER TRANSISTOR N-P-N silicon planar epitaxial transistor intended for transmitting applications in class-A, B or C w ith a supply voltage up to 28 V . The transistor is resistance stabilized and is guaranteed to withstand severe

Contextual Info: DISCRETE SEMICONDUCTORS Product specification Supersedes data of 1998 Jul 16 Philips Sem iconductors 1999 Apr 08 PHILIPS Philips Semiconductors Product specification PNP medium power transistor BC869 FEATURES PINNING • High current max. 1 A PIN • Low voltage (max. 20 V).

Contextual Info: DISCRETE SEMICONDUCTORS BITÂ S y i I T BF859 NPN high-voltage transistor Product specification Supersedes data of 1996 Dec 09 Philips Sem iconductors 1999 Apr 14 PHILIPS Philips Semiconductors Product specification NPN high-voltage transistor BF859 DESCRIPTION

BFP620

Abstract: BFP620 acs BFP620 applications note GFT45
Contextual Info: BFP620 NPN Silicon Germanium RF Transistor 3 4
High gain low noise RF transistor
Provides outstanding performance for a wide range of wireless applications 2
Ideal for CDMA and WLAN applications
Outstanding noise figure F = 0.7 dB at 1.8 GHz 1 VPS05605

Contextual Info: N AUER PHILIPS/DISCRETE bTE ] • b b S B ' m □□SaB'lB flOB ■ Philips Semiconductors Product Specification Silicon Diffused Power Transistor BU2525AF G EN ERAL DESCRIPTION New generation, high-voltage, high-speed switching npn transistor in a plastic full-pack envelope intended for use in

Contextual Info: BFP620 NPN Silicon Germanium RF Transistor 3 4
High gain low noise RF transistor
Provides outstanding performance for a wide range of wireless applications 2
Ideal for CDMA and WLAN applications
Outstanding noise figure F = 0.7 dB at 1.8 GHz 1 VPS05605