TRANSISTOR PH 45 V Search Results

BFQ290

Abstract: BFQ291
Contextual Info: Prelim inary specification P hilips Sem iconductors -3 3 -S 7 PNP HDTV video transistor PH IL I P S I N T E R N A T I O N A L SbE ]> BFQ290 711Dfl2h 00 45 b7 3 5T7 PINNING FEATURES DESCRIPTION PIN • High breakdown voltages • Low output capacitance 1 collector

Contextual Info: N AMER PHILIPS/DISCRETE bbSB^Bl DDSfiBbR 5T4 « A P X b'lE P Philips Semiconductors Product Specification Silicon Diffused Power Transistor BU2520AF GENERAL DESCRIPTION New generation, high-voltage, high-speed switching npn transistor in a plastic full-pack envelope intended for use in

Contextual Info: N AUER PHILIPS/DISCRETE bbSBPBl DDBabSb bfiB bTE D Philips Semiconductors Product specification Silicon diffused power transistor BU2527AF GENERAL DESCRIPTION New generation, high-voltage, high-speed switching npn transistor in a plastic full-pack envelope intended

TB222

Abstract: PH smd transistor PH
Contextual Info: August 7, 2012 TB222A Frequency=1-1000MHz Pout=25W Gain=11dB Vds=48Vdc Idq=0.15A Efficiency=30 to 70% GX141 PH: 805 484-4210 FAX:(805)484-3393 1110 Avenida Acaso, Camarillo CA 93012 www.polyfet.com B T 2A A ugst7,201 Gain/Eff vs Fre q: Vds =48V, Idq=0.15A, Pout=20W

Contextual Info: N AUER PHILIPS/DISCRETE b'lE T> • bbS3R31 DDS63b3 07b I Philips Semiconductors Product Specification Silicon Diffused Power Transistor BU2520A GENERAL DESCRIPTION New generation, high-voltage, high-speed switching npn transistor in a plastic envelope intended for use in

BFR93A E

Abstract: BFR93AR-T3 R5 SOT transistor BFR93A transistor npn Epitaxial Silicon zs 35 300MHZ 800MHZ BFR93A BFR93AR BFR93AR-T1
Contextual Info: PLANETA BFR93A/BFR93AR The RF Line NPN Silicon High-Frequency Transistor 1 3 DESCRIPTION The BFR93A/BFR93AR is an NPN silicon epitaxial transistor designed for low noise amplifier at VHF, UHF and CATV band. It has dynamic range and good current characteristic.

BLY93C

Abstract: RF POWER TRANSISTOR NPN vhf 77530 capacitor
Contextual Info: 7 1 1 0 8 2 ti D 0 t.3 t.M7 417 « P H I N bSE D BLY93C P H IL I P S I N T E R N A T I O N A L V.H.F. POWER TRANSISTOR N-P-N silicon planar epitaxial transistor intended fo r use in class-A, B and C operated h.f. and v.h.f. transm itters w ith a nominal supply voltage o f 28 V. The transistor is resistance stabilized and is

Contextual Info: N AUER PHILIPS/DISCRETE b^E D • bb53R31 002flbi1fl S05 M A P X Philips Semiconductors Product specification Silicon diffused power transistor BU2522AF GENERAL DESCRIPTION New generation, high-voltage, high-speed switching npn transistor in a plastic full-pack envelope intended

BLX93A

Abstract: high power npn UHF transistor BLX93 T-33-07 TRANSISTOR D 471 IEC134 47pH
Contextual Info: PH IL IR-S INTERNATIONAL MIE D Q 71LOä2b GG27àM7 3 B PHIN BLX93A MA IN TE N AN CE TYPE ^ - T -3 3 -Û 7 U.H.F. POWER TRANSISTOR N-P-N silicon planar epitaxial transistor intended for transmitting applications in class-A, B or C with a supply voltage up to 28 V. The transistor is resistance stabilized and is guaranteed to withstand severe

Marking BA SOT89

Contextual Info: DISCRETE SEMICONDUCTORS BITÂ S y i I T PXTA92 PNP high-voltage transistor Product specification Supersedes data of 1997 Jun 20 Philips Sem iconductors 1999 Apr 29 PHILIPS Philips Semiconductors Product specification PNP high-voltage transistor PXTA92 FEATURES

Contextual Info: N AUER PHILIPS/DISCRETE bTE ] • b b S B ' m □□SaB'lB flOB ■ Philips Semiconductors Product Specification Silicon Diffused Power Transistor BU2525AF G EN ERAL DESCRIPTION New generation, high-voltage, high-speed switching npn transistor in a plastic full-pack envelope intended for use in

tddr 5250

Abstract: P-SIP-15-1 COIL TLE 5250 c 5250 tle5250 driver for stepper motor TRANSISTOR Q2
Contextual Info: TLE 5250 2.5-A High Performance Smart Power Stepper-Motor Driver with Diagnostic Interface SPT-IC Overview Features • • • • • • • • • • • • Single phase driver for stepper motor 2.5 A Low ON-resistance typical 0.3 Ω Wide supply range 6 V to 45 V

transistor B42

Abstract: AX400 b42 transistor
Contextual Info: N E C ELECTRONICS INC 30E D • b457S25 OGSTSTl S ■ .r-W-b3 PHOTO TRANSISTOR PH I 07 DARLINGTON PHOTO TRANSISTOR The PH 107 is a darlington photo transistor in a plastic molded package, P A C K A G E D IM EN SIO N S and very suitable for a detector of a photo interrupter.

Contextual Info: N AMER P H IL IP S /D IS C R E T E Philips Semiconductors b'lE T> • b b S a 'm 0026381 0^1 ■ _ Product specification Silicon diffused power transistor BU2520DF GENERAL DESCRIPTION New generation, high-voltage, high-speed switching npn transistor with an integrated damper diode in a full plastic

tept5600 response time

Abstract: Application NOTES TSAL4400 BPV11F Photo interrupter application notes SMD Transistor 1020 "Photo Interrupter" dual transistor CNY70 cny70 datasheet TEMT6000 TCND5000
Contextual Info: w w w. v i s h a y. c o m Selector Guide Infrared Emitters, Photo Detectors and optical sensors Op t o e l e c t r o n i cs V I S HAY INTERTE C HNOLO G Y , IN C . infrared emitters, Photo Detectors, and Optical Sensors introduction as one of the world’s leading suppliers of infrared emitters, photo detectors, and optical sensors, Vishay offers an extraordinarily

blw86

Abstract: ferroxcube wideband hf choke BY206
Contextual Info: m b5E » 711002b 0Db33Sû SST « P H I N BLW86 _PHILIPS INTERNATIONAL_ j H.F./V.H.F. POWER TRANSISTOR N-P-N silicon planar epitaxial transistor intended fo r use in class-A, AB and B operated h.f. and v.h.f. transmitters w ith a nominal supply voltage o f 28 V. The transistor is resistance stabilized and is

Contextual Info: TPS5300 IMVP MOBILE POWER SUPPLY CONTROLLER SLVS334 – DECEMBER 2000 D Single-Chip Speed Step Solution D Hysteretic Controller Provides Fast D D D D D D D D D D D DRV_CLK VSENSE_CLK DT_SET ANAGND VSENSE_CORE SLOWST VREFB VHYST OCP DROOP IOUT PSM/LATCH IS–

Contextual Info: N AUER PHILIPS/DISCRETE bRE D • bbS3R31 002fl37b 724 « A P X Philips specification Silicon diffused power transistor BU2520D GENERAL DESCRIPTION New generation, high-voltage, high-speed switching npn transistor with an integrated damper diode in a plastic

Contextual Info: SEMICONDUCTOR TECHNICAL DATA KTD882 EPITAXIAL PLANAR NPN TRANSISTOR AUDIO FREQUENCY POWER AMPLIFIER LOW SPEED SWITCHING FEATURES • Complementary to KTB772. MAXIMUM RATINGS Ta=25°C CHARACTERISTIC SYMBOL RATING UNIT Collector-Base Voltage 40 V V CBO Collector-Emitter Voltage

BXO9334

Contextual Info: VOLTAGE CONTROLLED OSCILLATOR 1000 TOM9334 - 1600 MHz Available as: TOM9334, 4 Pin TO-8 T4 TON9334, 4 Pin Surface Mount (SM3) BXO9334, Connectorized Housing (H1) Features * Low Noise Bipolar Transistor * Broad Tuning Range * Operating Case Temp. -45 ºC to + 85 ºC

Contextual Info: SM-8 COMPLEMENTARY MEDIUM POWER DARLINGTON TRANSISTORS ZDT6702 ISSUE 2 - February 1997_ ABSOLUTE MAXIMUM RATINGS. PARAMETER SYMBOL NPN PNP UNIT Collector-Base Voltage V CBO 80 -80 V Collector-E m itter Voltage V CEO

Contextual Info: ^53=131 0025510 'i El H A P X BSP121 L7E » N AMER PH IL IP S/ DI SC R ET E 7 V. N-CHANNEL ENHANCEMENT MODE VERTICAL D-MOS TRANSISTOR N-channel enhancement mode vertical D-MOS transistor in a miniature SOT223 envelope and designed fo r use as a line current interrupter in telephone sets and fo r application in relay, high-speed and

h a 431 transistor

Abstract: DARLINGTON ESM 30 diode ESM 5045D ESM5045D 431E ESM5045DV
Contextual Info: PH I L I P S INTERNATIONAL 4SE D E3 711002b 0D31237 J 7 SPHIN ESM5045D V T -3 3 ~ 2 ? SILICON DARLINGTON POWER TRANSISTORS NPN high-current switching Darlington transistor in ISOTOP package, intended fo r use in m otor drives, converters, switch mode power supplies (SMPS) and uninterruptable power supplies (UPS).

Contextual Info: LM2904 LOW POWER DUAL OPERATIONAL AMPLIFIERS . INTERNALLY FREQUENCY COMPENSATED . LARGE DC VOLTAGE GAIN : 100dB . WIDE BANDWIDTH unity g a in : 1.1 MHz (temperature compensated) . VERY LOW SUPPLY CURRENT/OP (500^A) ESSENTIALLY INDEPENDENT OF SUPPLY VOLTAGE