GX141 Search Results

TB222

Abstract: PH smd transistor PH
Contextual Info: August 7, 2012 TB222A Frequency=1-1000MHz Pout=25W Gain=11dB Vds=48Vdc Idq=0.15A Efficiency=30 to 70% GX141 PH: 805 484-4210 FAX:(805)484-3393 1110 Avenida Acaso, Camarillo CA 93012 www.polyfet.com B T 2A A ugst7,201 Gain/Eff vs Fre q: Vds =48V, Idq=0.15A, Pout=20W

Contextual Info: polyfet rf devices GX141 General Description Polyfet's GAN on SiC HEMT power transistors contain no internal matching; making them suitable for both broadband and narrow band applications. The use of a thermally enhanced package enables this device to have superior heat dissipation

GaN TRANSISTOR

Contextual Info: polyfet rf devices GX141 General Description Polyfet's GAN on SiC HEMT power transistors contain no internal matching; making them suitable for both broadband and narrow band applications. The use of a thermally enhanced package enables this device to have superior heat dissipation

LK141

Abstract: 60W VHF TV RF amplifier
Contextual Info: An Introduction to Polyfet RF Devices Who is Polyfet RF Devices? Established in 1987, Polyfet RF Devices is a California based manufacturer of broadband LDMOS, VDMOS, and GaN power transistors and power modules. Polyfet’s Financials • • • • • Private corporation