TRANSISTOR PH 30 Search Results

transistor B42

Abstract: AX400 b42 transistor
Contextual Info: N E C ELECTRONICS INC 30E D • b457S25 OGSTSTl S ■ .r-W-b3 PHOTO TRANSISTOR PH I 07 DARLINGTON PHOTO TRANSISTOR The PH 107 is a darlington photo transistor in a plastic molded package, P A C K A G E D IM EN SIO N S and very suitable for a detector of a photo interrupter.

K438-1000A

Abstract: BUK438-1000A BUK438-1000B k4381
Contextual Info: 7=3 f - Æ Ph ilips C o m p o n e n ts Data sheet status Preliminary specification date o f issue March 1991 BUK438-1000A/B PowerMOS transistor SbE D PH IL IP S I N T E R N A T I O N A L GENERAL DESCRIPTION N-channel enhancem ent mode field-effect power transistor in a

TLP620

Contextual Info: T O S H IB A PH O T O C O U PLER SEMICONDUCTOR TOSHIBA TEC H N IC A L TLP620, TLP620-2, TLP620-4 DATA G aA s IRED & PH OTO -TRANSISTOR TLP620 PROGRAM M ABLE CONTROLLERS A C / DC-INPUT MODULE TELECOMMUNICATION The T O S H IB A TLP620, -2 and -4 consists of a photo-transistor

BF753

Contextual Info: Ph|lips^emiconductor^_ WM 7 1 1 Qflg[3 O D bflbkiM GS2 PH I N Teliminar^pecifica^ NPN 5 GHz wideband transistor FEATURES BF753 PINNING • Low cost • Low noise figure 1 • 5 V tuner applications. 2 emitter 3 collector PIN DESCRIPTION base DESCRIPTION NPN silicon planar epitaxial

Contextual Info: A$A Avionics Pulsed Power Transistor PH 1090-30S Preliminary 30 Watts, 1030-1090 MHz, 10 |is Pulse, 1% Duty Features Outline Drawing • Designed for Short Pulse IFF Applications • NPN Silicon Microwave Power Transistor • Common Base Configuration • Broadband Class C Operation

Contextual Info: N AMER PH IL IPS/D ISCR ETE b'lE » bb53T31 0030733 b32 « A P X Product Specification Philips Semiconductors BUK482-100A PowerMOS transistor GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic envelope suitable for surface

"photo transistor"

Abstract: MXP1126-C ua20
Contextual Info: 2830 S. Fairview St. Santa Ana, CA 92704 PH: 714.979.8220 FAX: 714.557.5989 MXP1126-C Photo Transistor Chip Features • • • • • Light Activated Photo Transistor Chip Planar NPN Aluminum Wire bondable Backside Metallization - Gold Die Attach methods: Eutectic or Epoxy

MSC1342

Abstract: "photo transistor" MXP415-C
Contextual Info: 2830 S. Fairview St. Santa Ana, CA 92704 PH: 714.979.8220 FAX: 714.557.5989 MXP415-C Photo Transistor Chip Features • • • • • Light Activated Photo Transistor Chip Planar NPN Aluminum Wire bondable Backside Metallization - Gold Die Attach methods: Eutectic or Epoxy

Q2n2222a spice model

Abstract: q2n2222a 2n2222a spice model q2n222 SPICE model 2n2222a Q2N2222 MICROSEMI 2N2222A BF 198 spice 2N2222A JANTX 2N2222A JAN
Contextual Info: 580 Pleasant St. Watertown, MA 02172 PH: 617 926-0404 FAX: (617) 924-1235 2N2222A Features • • • • SWITCHING TRANSISTOR JAN, JANTX, JANTXV Meets MIL 19500 /255 Collector - Base Voltage 75 V Collector - Current 800 mA High Speed, Medium Current Bipolar Transistor

Contextual Info: N AMER PH IL I P S / D I S C R E T E T> bbS3^31 00 30 4 5 5 550 • APX Philips Semiconductors Product Specification PowerMOS transistor GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a lastic envelope. he device is intended for use in

Q2N2221A

Abstract: Q2N2221 Q2N222 2N2221A JANTX 2N2221A BF 198 spice q2n* npn transistor chip die npn transistor DSW2N2221A
Contextual Info: 580 Pleasant St. Watertown, MA 02172 PH: 617 926-0404 FAX: (617) 924-1235 2N2221A Features SWITCHING TRANSISTOR JAN, JANTX, JANTXV • Meets MIL 19500 /255 • Collector - Base Voltage 75 V • Collector - Current 800 mA • High Speed, Medium Current Bipolar Transistor

j78 transistor

Abstract: transistor j7 transistor 669 transistor j4 13MM PH1214-3L j4 transistor MICROWAVE TEST FIXTURE
Contextual Info: an AMP company Radar Pulsed Power Transistor, 3W, 2ms Pulse, 20% Duty 1.2 - 1.4 GHz PH=l214=3L Features l l l l l l l l NPN Silicon Microwave Power Transistor Common Base Configuration Broadband Class C Operation Matrix Geometry Diffused Emitter Ballasting Resistors

2N2484

Abstract: Q2N2484 MSCO280A q2n* npn transistor
Contextual Info: 580 Pleasant St. Watertown, MA 02172 PH: 617 926-0404 FAX: (617) 924-1235 2N2484 Features • • • • SWITCHING TRANSISTOR JAN, JANTX, JANTXV Meets MIL 19500 /376 Collector - Base Voltage 60 V Collector - Current 50 mA High Speed, Low Power Bipolar Transistor

Contextual Info: . N E C ELECTRONICS INC 3QE D • b427525 G 0 2 ci50,:i 7 ■ T ^ " 4 i *“ W PHOTO TRANSISTOR _ P H 1 0 6 PHOTO TRANSISTOR The PH 106 is a photo transistor in a plastic molded package, and PACKAG E DIMENSIONS very suitable for a detector of a photo interrupter.

buk416

Contextual Info: N AMER PH IL IPS /DI SCRE TE bTE J> bbS3R31 0D3DM45 bOl » A P X Product Specification Philips Semiconductors BUK416-200AE/BE PowerMOS transistor GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in ISOTOP envelope. The device is intended for use in

Contextual Info: N AMER PH IL IPS /DISCR ETE b b S a ^ l OOEfi^Ql 2m BLV10 b^E » IAPX V.H.F. POWER TRANSISTOR N-P-N silicon planar epitaxial transistor intended for use in ciass-A, B and C operated mobile, h.f. and v.h.f. transmitters with a nominal supply voltage of 13,5 V. The transistor is resistance stabilized and

SCR 1989

Contextual Info: N AUER PH IL IPS /DISCR ETE bbS3131 D02042S 0 2SE D PowerMOS transistor BUK446-1000A BUK446-1000B T -31-d7 GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic full-pack envelope. The device is intended for use in Switched Mode Power Supplies

Contextual Info: bbSS^! Philips Semiconductors 0055058 5TM HIAPX Product specification NPN 4 GHz wideband transistor BFQ18A N AflER PH IL IP S /P IS C R E TE DESCRIPTION b?E D PINNING NPN transistor in a plastic SOT89 envelope intended for application in thick and thin-film circuits. It is

Contextual Info: N AMER PH IL IP S/D ISCRET E DbE D PowerMOS transistor • ” bbSBTBl 0D14451 4 ■ BUZ32 ^_ j May 1987 GENERAL DESCRIPTION N-channei enhancement mode field-effect power transistor in a plastic envelope. The device is intended for use in Switched Mode Power Supplies

BFR95

Contextual Info: PJjjjjP^ejjiconductor^^^^ • bbS3T31 0031flflM ^72 gg^py^Productspecification NPN 3.5 GHz wideband transistor BFR95 N AMER PH ILIP S/ D IS C R ET E DESCRIPTION b*1E D PINNING NPN resistance-stabilized transistor in a SOT5 TO-39 metal envelope, with collector connected to the case.

BUK438-500B

Contextual Info: b^E D N AMER PH ILI PS/ DI SC RE TE • bbS3R31 0D3D4R5 137 H A P X Product Specification Philips Semiconductors BUK438-500B PowerMOS transistor GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic envelope. The device is intended for use in

BUK637-500B

Contextual Info: N APIER PH ILIPS/DISCR ETE bRE D • bbSBTBl 00 3 0 fl 7 D Philips Semiconductors *APX Product Specification PowerMOS transistor BUK637-500B Fast recovery diode FET_ _ GENERAL DESCRIPTION N-channel enhancement mode

Contextual Info: Afa Satellite Communications Power Transistor PH 1600-30 30 Watts, 1.55-1.65 GHz Features • • • • • Outline Drawing C W Operation Internal Impedance Matching Common Base Configuration Multilayer Metal / Ceramic Package Gold Metallization System Absolute Maximum Ratings at 25°C

BUK451-60A

Contextual Info: Philips Components Data sheet status Preliminary specification date of issue March 1991 BUK451-60A/B PowerMOS transistor PH I L IP S I N T E R N A T I O N A L SbE D I_ i GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a