TRANSISTOR PD0 Search Results

Contextual Info: epitex Opto-Device & Custom LED PHOTO-DIODE PD006-SMT PRELIMINARY Lead Pb Free Product – RoHS Compliant PD006-SMT SMD Type PHOTO-TRANSISTOR PD006-SMT is a surface mount type photo-transistor featuring high photocurrent. This phototransistor consists of a chip with 0.6x0.6mm active area mounted

BU4508AX

Contextual Info: Philips Semiconductors Product specification Silicon Diffused Power Transistor BU4508AX GENERAL DESCRIPTION Enhanced performance, new generation, high-voltage, high-speed switching npn transistor in a plastic full-pack envelope intended for use in horizontal deflection circuits of colour television receivers an p.c monitors. Features

TRANSISTOR BU2525DF

Contextual Info: Philips Semiconductors Product specification Silicon Diffused Power Transistor BU2525DF GENERAL DESCRIPTION New generation, high-voltage, high-speed switching npn transistor with integrated damper diode in a plastic full-pack envelope intended for use in horizontal deflection circuits of large screen colour television receivers up to

TTL to vga

Abstract: LVDS 30 pin to vga LVDS to vga TTL parallel to vga LVDS display 30 pin 30pin vga header Digital Displays SFD064VX1ADV PD050VX2 of 30 pin LVDS
Contextual Info: 1.17.06 TECHNICAL BRIEF BY: AZD ENGINEERING TFT Digital Board Signals AZ Displays offers decoder boards suitable to display full motion video on its digital TFT panels. Digital displays are designed to interface to a digital-to-analog board via TTL transistor to transistor logic or LVDS (low voltage differential signal).

NDS9410A

Contextual Info: May 1996 National Semiconductor" NDS9410A Single N-Channel Enhancement Mode Field Effect Transistor General Description Features These N-Channel enhancement mode power field effect transistors are produced using National's proprietary, high cell density, DMOS technology.

AO4420

Abstract: AO4420L
Contextual Info: Rev 4: Nov 2004 AO4420, AO4420L Green Product N-Channel Enhancement Mode Field Effect Transistor General Description Features The AO4420 uses advanced trench technology to provide excellent RDS(ON), shoot-through immunity and body diode characteristics.This device is suitable for

AO4609

Abstract: mm4609 aos Lot Code Week ALPHA MARKING CODE
Contextual Info: July 2003 AO4609 Complementary Enhancement Mode Field Effect Transistor General Description Features The AO4609 uses advanced trench technology MOSFETs to provide excellent RDS ON and low gate charge. The complementary MOSFETs may be used to form a level shifted high side

B420

Abstract: AOB420 D2PAK to-263 omega AOB420L
Contextual Info: Rev 2: Oct 2004 AOB420, AOB420L Green Product N-Channel Enhancement Mode Field Effect Transistor General Description Features The AOB420 uses advanced trench technology to provide excellent RDS(ON), low gate chargeand low gate resistance. This device is ideally suited for use

AO7403

Abstract: omega 600 AO7403L 3N SOT323 diode marking code 3n
Contextual Info: Rev 2: Aug 2004 AO7403, AO7403L Green Product P-Channel Enhancement Mode Field Effect Transistor General Description Features The AO7403 uses advanced trench technology to provide excellent RDS(ON), low gate charge, and operation with gate voltages as low as 1.8V, in the

Contextual Info: AO4600 Complementary Enhancement Mode Field Effect Transistor General Description Features n-channel p-channel VDS V = 30V -30V ID = 6.9A (VGS = 10V) -5A (VGS = -10V) RDS(ON) < 27mΩ < 49mΩ (VGS =- 10V) < 32mΩ < 64mΩ (VGS =- 4.5V) < 50mΩ < 120mΩ (VGS = -2.5V)

ao4600

Abstract: Complementary POWER MOSFET AO4600 AO4600L PD-00165 P-channel AND N-Channel power mosfet SO-8 ENHANCEMENT MARKING CODE l22 marking 49M 65D2
Contextual Info: AO4600 Complementary Enhancement Mode Field Effect Transistor General Description Features n-channel p-channel -30V VDS V = 30V ID = 6.9A (VGS = 10V) -5A (VGS = -10V) RDS(ON) < 27mΩ < 49mΩ (VGS =- 10V) < 32mΩ < 64mΩ (VGS =- 4.5V) < 50mΩ < 120mΩ (VGS = -2.5V)

PD0026

Abstract: transistor C 4429 equivalent AO4429 AO4429L PD-002 aos Lot Code Week
Contextual Info: AO4429 P-Channel Enhancement Mode Field Effect Transistor General Description Features The AO4429 uses advanced trench technology to provide excellent RDS ON , and ultra-low low gate charge. This device is suitable for use as a load switch. The device is ESD protected. Standard

ao4800

Abstract: 4800 so-8 aos Lot Code Week 4800 SO8
Contextual Info: AO4800 Dual N-Channel Enhancement Mode Field Effect Transistor General Description Features The AO4800 uses advanced trench technology to provide excellent RDS ON and low gate charge. The two MOSFETs make a compact and efficient switch and synchronous rectifier combination for use in buck

4410 SO-8

Abstract: 4410 diode MARKING CODE 18A AO4410L transistor on 4410 AO4410 rg 625 marking 62m 4410 SO8 ALPHA YEAR CODE
Contextual Info: Rev 0:Jan 2003 Rev 1:Jan 2004 Rev 2:Mar 2004 AO4410, AO4410L Lead-Free N-Channel Enhancement Mode Field Effect Transistor General Description Features The AO4410 uses advanced trench technology to provide excellent RDS(ON), shoot-through immunity, body diode characteristics and ultra-low gate

RL56

Abstract: AO7411L Marking Code 18A SC-70-6L AO7411 SC-70-6 RL-56 marking 624 sc-70
Contextual Info: AO7411 P-Channel Enhancement Mode Field Effect Transistor General Description Features The AO7411 uses advanced trench technology to provide excellent RDS ON , low gate charge and operation with gate voltages as low as 1.8V. This device is suitable for use as a load switch or in PWM

MC 151 pnp

Abstract: 05Z5 2N3740 2N3740A 2N3741 2N3741A 2N3766 2N3767 2N4698 2N4900
Contextual Info: General Transistor Corporation CASE TO-66 lc MAX = 1-5A VcEO(SUS) « 40-425V PNP Power Transistors NFN Typ* No. comptait«»! 2N3740 2N3740A 2N3741 2N3741A 2N3766 2N4898 2N4699 2N4900 2N5344 2N3767 2N4910 2N4911 2N4912 VCE(SAT) 0IC/IB (V0A/A) VCEO <»»>

AO4916

Abstract: 4916 mosfet AO4916L 4916 alpha rjl 10a
Contextual Info: Rev 3: Nov 2004 AO4916, AO4916L Green Product Dual N-Channel Enhancement Mode Field Effect Transistor with Schottky Diode General Description Features The AO4916 uses advanced trench technology to provide excellent R DS(ON) and low gate charge. The two MOSFETs make a compact and efficient switch

4407

Abstract: TRANSISTOR 4407 4407 soic ALPHA SEMICONDUCTOR 4407 AO4407 AO4407L 4407 so8 AOS AO4407 4407 4407 so-8 4407 so 8
Contextual Info: Rev 0:June 2002 Rev 1: Feb 2004 AO4407, AO4407L Lead-Free P-Channel Enhancement Mode Field Effect Transistor General Description Features The AO4407 uses advanced trench technology to provide excellent RDS(ON), and ultra-low low gate charge with a 25V gate rating. This device is suitable

D408

Abstract: D408 transistor d408 be transistor d408 diode d408 TRANSISTOR aoD408 AOD408L
Contextual Info: AOD408 N-Channel Enhancement Mode Field Effect Transistor General Description Features The AOD408 uses advanced trench technology to provide excellent RDS ON and low gate charge. This device is suitable for use as a load switch or in PWM applications. Standard Product AOD408 is Pbfree (meets ROHS & Sony 259 specifications).

mosfet 4914

Abstract: 4914 mosfet 4914 dual n-channel 4914 DUAL MOSFET 4914 alpha omega 4914 ON 4914 AO4914 AO4914L 4914 alpha
Contextual Info: Rev 0: July 2003 Rev 1: Jan 2004 Rev 2: Mar 2004 AO4914, AO4914L Lead-Free Dual N-Channel Enhancement Mode Field Effect Transistor with Schottky Diode General Description Features The AO4914 uses advanced trench technology to provide excellent R DS(ON) and low gate charge. The two MOSFETs make

8178 n

Abstract: 8178 preregulator A817 coil ignition ignition coil Low Dropout Positive TO-243AA A8178LLR A8178LLT
Contextual Info: 8178 8178 Data Sheet 27468.22 LOW-DROPOUT, 7.7 V PREREGULATOR LOW-DROPOUT, 7.7 V PREREGULATOR 7.7 V 3 VR 1 2 W E I V 7.7 V e c i t o n t These devices are supplied in small-outline plastic transistor packages for surface-mount applications. The A8178LLR is supplied in

8178 n

Abstract: 8178 coil ignition ignition coil A8178LLR A8178LLT automotive transistor coil ignition TA 8178
Contextual Info: 8178 8178 Data Sheet 27468.22 LOW-DROPOUT, 7.7 V PREREGULATOR LOW-DROPOUT, 7.7 V PREREGULATOR 7.7 V 3 VR 1 2 W E I V 7.7 V e c i t o n t These devices are supplied in small-outline plastic transistor packages for surface-mount applications. The A8178LLR is supplied in

2N5006

Abstract: 2N5008 2N5288 2N5317 2N5319 2N5731 2N5957 WALTA
Contextual Info: General Transistor Corporation CASE le max = 10-20A V c e o ( s u s ) = 80-100V NPN Power Transistors ISOLATED COLLECTOR VCEO (aua) M 1C (mm) (A) 2N5006 2N5008 2N5288 2N5289 BO BO 100 100 10 10 10 10 30-90 @5/5 70-200 @ 5/5 30-90 @5/5 70-200 @ 5/5 1.5 @ 10/1

Contextual Info: General Transistor Corporation CASE le MAX V c e o (SUS) = = TO-3 2-50A 35-500V NPN Power Transistors PNP VCEO (WS) 1C (max) M (A) hFE@ic/Vc* (min-max @ A/V) 40 55 40 55 6 6 6 6 15-45 0 1.5/4 15*4501.5/4 25-75 0 1.5/4 25-75 @1.5/4 40 60 140 60 80 5 15 10