y51 h 120c
Abstract: bd124 KT368 BFQ59 Silec Semiconductors BD214 al103 AFY18 bd192 MM1711
Contextual Info: Towers' International Transistor Selector ! o Towers’ International Transistor Selector Specification data for the identification, selection and substitution of transistors by T D Towers, MBE, MA, BSc, C Eng, MIERE Revised Edition U pdate Three London: NEW YORK
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500ma240mwfy51 h 120cbd124+8kt368bfq59silec semiconductorsbd214al103afy18bd192mm1711
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D73 transistor
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF Line NPN Silicon RF Power Transistor MRF321 . . . designed primarily for wideband large-signal driver and predriver amplifier stages in 200-500 MHz frequency range. • Guaranteed Performance at 400 MHz, 28 Vdc
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mrf321b3b72s5d73 transistor |
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MRF321
Contextual Info: MRF321 The RF Line NPN Silicon Power Transistor 10W, 400MHz, 28V Designed primarily for wideband large–signal driver and predriver amplifier stages in 200–500 MHz frequency range. • • • • Guaranteed performance at 400 MHz, 28 Vdc Output power = 10 W
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transistor MRF321
Abstract: JMC5201 redcap erie redcap capacitors vk200 coil erie redcap vk200 1N4001 MRF321 case 244-04
Contextual Info: Order this document by MRF321/D SEMICONDUCTOR TECHNICAL DATA The RF Line NPN Silicon RF Power Transistor MRF321 . . . designed primarily for wideband large–signal driver and predriver amplifier stages in 200–500 MHz frequency range. • Guaranteed Performance at 400 MHz, 28 Vdc
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mrf321/dmrf321transistor mrf321jmc5201+7redcaperie redcap capacitorsvk200 coilerie redcapvk2001n4001case 244-04
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MRF321
Abstract: ferroxcube 56-590-65
Contextual Info: TELEPHONE: 973 376-2922 (212)227-6005 FAX: (973) 376-8960 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. The RF Line NPN Silicon MRF321 RF Power Transistor . . . designed primarily for wideband large-signal driver and predriver amplifier stages in 200-500 MHz frequency range.
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mrf321400mhz1n400156-590-65/4b+2vk200-19/4bferroxcube 56-590-65
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MRF321
Abstract: 3 w RF POWER TRANSISTOR NPN erie redcap capacitors 1N4001 VK200 transistor MRF321
Contextual Info: MOTOROLA Order this document by MRF321/D SEMICONDUCTOR TECHNICAL DATA The RF Line NPN Silicon RF Power Transistor MRF321 . . . designed primarily for wideband large–signal driver and predriver amplifier stages in 200 – 500 MHz frequency range. • Guaranteed Performance at 400 MHz, 28 Vdc
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mrf321/dmrf3213 w rf power transistor npnerie redcap capacitors+31n4001vk200transistor mrf321
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MRF321
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The R F Line 10 W - 4 0 0 M H z RF POWER TRANSISTOR NPN SILICON RF POWER TRANSISTOR NPN SILICO N . . . designed p rim a rily to r w ideband large-signal d riv e r and pre d rive r a m p lifie r stages in th e 2 0 0 — 50Q M H z fre q u e n c y range.
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mrf321 |
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MRF321
Abstract: ASI10694
Contextual Info: MRF321 NPN SILICON RF POWER TRANSISTOR DESCRIPTION: The ASI MRF321 is Designed for High Power Class C Amplifier, in 225 to 400 MHz Military Communication Equipment. PACKAGE STYLE .280 4L STUD A FEATURES: 45° C • Class C Operation • PG = 10 dB at 10 W/400 MHz
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A5 GNE mosfet
Abstract: jo3501 2N4427 equivalent bfr91 2N503 2N5160 MOTOROLA BF431 BFR96 HY 1906 transistor jo2015 kd 2060 transistor
Contextual Info: Volume I Selector Guide 1 Discrete Transistor Data Sheets 2 Case Dimensions 3 Volume II Selector Guide ^ Amplifier Data Sheets Tuning, Hot Carrier and PIN Diode Data Sheets 6 Technical Information Case Dimensions Cross Reference and Sales Offices 8 9 MOTOROLA
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1phx11136q-14a5 gne mosfetjo35012n4427 equivalent bfr91+72n5032n5160 motorolabf431bfr96hy 1906 transistorjo2015kd 2060 transistor
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Motorola transistors MRF 947
Abstract: trimpots 3296 transistor C5386 1n4740 2N5591 Motorola 2N5688 CQ 542 Transistor npn motorola equivalent transistor of 2sc3358 HB215/D ic cd 2399 gp
Contextual Info: Selector Guide 1 Discrete Transistor Data Sheets Amplifier Data Sheets Monolithic Integrated Circuit H Data Sheets mm Case Dimensions Cross Reference and Sales Offices 6 M MOTOROLA RF Device Data This publication presents technical information for the several product families that
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2phx11136q-17motorola transistors mrf 947trimpots 3296transistor c5386+71n47402n5591 motorola2n5688cq 542 transistor npn motorolaequivalent transistor of 2sc3358hb215/dic cd 2399 gp
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MHW721A2
Abstract: 13001 S 6D TRANSISTOR atv5030* motorola 2N5591 MOTOROLA 13001 6D TRANSISTOR BGY41 MHW710-1 construction linear amplifier 2sc1945 7119 amperex bf503
Contextual Info: Volume I Selector Guide 1 Discrete Transistor Data Sheets 2 Case Dimensions 3 Volume II Selector Guide Amplifier Data Sheets 5 Tuning, Hot Carrier and PIN Diode Data Sheets 6 Technical Information Case Dimensions 8 Cross Reference and Sales Offices 9 MOTOROLA RF DEVICE DATA
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1phx11136q-14mhw721a213001 s 6d transistoratv5030* motorola+72n5591 motorola13001 6d transistorbgy41mhw710-1construction linear amplifier 2sc19457119 amperexbf503
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ATT 47
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF Line NPN Silicon RF Power Transistor . . . designed primarily for wideband large-signal driver and predriver amplifier stages in 20 0 -5 0 0 MHz frequency range. • Guaranteed Performance at 400 MHz, 28 Vdc Output Power = 10 Watts
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jmc 5201
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF Line NPH Silicon RF Power Transistor . . . designed primarily for wideband large-signal driver and predriver amplifier stages in 2 0 0 -5 0 0 MHz frequency range. • Guaranteed Performance at 400 MHz, 28 Vdc Output Power = 10 Watts
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vk200 coil
Abstract: jmc 5201 ferroxcube 56-590-65 VK200-19 FERROXCUBE VK200
Contextual Info: MOTOROLA • SEMICONDUCTOR TECHNICAL DATA The RF Line NPN S ilico n RF P o w er T ran sisto r . . . designed primarily for wideband large-signal driver and predriver amplifier stages in 200-500 MHz frequency range. 10 W, 400 MHz RF POWER TRANSISTOR NPN SILICON
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mrf321vk200 coiljmc 5201ferroxcube 56-590-65+2vk200-19ferroxcube vk200
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transistor MRF321
Abstract: JMC 1200
Contextual Info: MOTOROLA Order this document by MRF321/D SEMICONDUCTOR TECHNICAL DATA MRF321 . . . designed primarily for wideband large–signal driver and predriver amplifier stages in 200 – 500 MHz frequency range. • Guaranteed Performance at 400 MHz, 28 Vdc Output Power = 10 Watts
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MPF102 spice model
Abstract: BLF278 mosfet HF amplifier BLF4G08LS-160A x-band mmic core chip BLF4G08LS-160 BIT 3713 IB3135 toshiba smd marking code transistor bgu7041 TEA6848H
Contextual Info: RF Manual 15th edition Application and design manual for High Performance RF products May 2011 High Performance RF for the most demanding applications NXP’s RF Manual makes design work much easier NXP's RF Manual is one of the most important reference tools on the market for
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te121mpf102 spice modelblf278 mosfet hf amplifierblf4g08ls-160a+7x-band mmic core chipblf4g08ls-160bit 3713ib3135toshiba smd marking code transistorbgu7041tea6848h
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circuit diagram of GSM based home automation system
Abstract: BF1118 MOBILE jammer GSM 1800 MHZ circuit diagram bgu7051 BLF578 CMMB antenna MRF6V2300N 300w power amplifier circuit diagram BF256B spice model maxim DVB
Contextual Info: RF Manual 14th edition Application and design manual for High Performance RF products May 2010 2010 NXP B.V. copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. No liability will be accepted by
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circuit diagram of gsm based home automation systembf1118mobile jammer gsm 1800 mhz circuit diagrambgu7051+6blf578cmmb antennamrf6v2300n300w power amplifier circuit diagrambf256b spice modelmaxim dvb
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filter for GPS spice
Abstract: BLF578 diode smd marking BUF GP 750 BLF7G10-300p AX 2008 lqfp48 GP 809 DIODE BF1118 MPAL2731M15 bgu7051 BB 505 Varicap Diode
Contextual Info: RF手册第14版 用于高性能RF产品的应用和设计手册2010年5月 恩智浦半导体RF手册第14版 3 高性能RF适用于最高要求的应用 恩智浦RF手册令设计更简易 恩智浦RF手册–当今RF设计市场上最重要的参考工具之一–展示了我们从小信号到大功率
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rf2010567sigejesd204a-dacadcjesd204a-+15aec100bfr90bfq33tff1004hnjesd204ablf578filter for gps spicediode smd marking buf gp 750blf7g10-300pax 2008 lqfp48gp 809 diodebf1118mpal2731m15bgu7051bb 505 varicap diode
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sot-89 BV SMD TRANSISTOR MARKING CODE
Abstract: bgu7051 MS1051 2SK163 BLF578 fm band BLF278 mosfet HF applications BFU610F TAN250A PTFA 210301E - 30 W 100MHz SMD RF Mixer
Contextual Info: RFマニュアル第14版 RF製品用のアプリケーションお よび設計マニュアル2010年5月 NXPセミコンダクターズRFマニュアル第14版 3 最も要求の高いアプリケーションに向けたハイパフォーマンスRF NXPのRFマニュアルでRF設計がこれ
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nxprf14jesd204aaec100rfbfr90+13rfbfq33tff1004hnfmf11070hnsot-89 bv smd transistor marking codebgu7051ms10512sk163blf578 fm bandblf278 mosfet hf applicationsbfu610ftan250aptfa 210301e - 30 w100mhz smd rf mixer
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Motorola transistors MRF 947
Abstract: motorola hep cross reference 2N5070 2N5591 MOTOROLA Semicon volume 1 mrf532 transistor equivalents for 2n3866 siemens semiconductor manual Microlab Splitter Specification sheet pt9797
Contextual Info: MOTOROLA RF DATA MANUAL Prepared by Technical Information Center M otorola’s leadership position of RF power, small-signal transistors and hybrid amplifiers is by research and new product development coupled with a com plete in-house m anufacturing ca pa b ility in clu d in g silico n g row ing,
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motorola transistors mrf 947motorola hep cross reference2n50702n5591 motorola+6semicon volume 1mrf532transistor equivalents for 2n3866siemens semiconductor manualmicrolab splitter specification sheetpt9797
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mrf502 gold transistor
Abstract: Motorola transistors MRF630 2N3948 transistor 2n4959 BFR96 MRF2369 MRF525 MRF536 MRF931 MRF911
Contextual Info: characterized with y or s parameters; and in addition, there are non-saturated switching characteristics, low power driver spec ifications, and noise figure limits. QPL types with JAN, JTX and JTXV processing levels are available as well as Hi Rei pro
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17a-0105a-01mrf5252n4428+13o-205ad2n5160f2n3866mrf313mrf502 gold transistormotorola transistors mrf6302n3948transistor 2n4959bfr96mrf2369mrf536mrf931mrf911
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MRF536
Abstract: MRF515 MOTOROLA SELECTION mrf237 mrf237 MOTOROLA 2N3866 MOTOROLA 2N3866 MOTOROLA s parameters s-parameter 2N4427 MRF227 MRF229 MRF237
Contextual Info: characterized with y or s parameters; and in addition, there are non-saturated switching characteristics, low power driver spec ifications, and noise figure limits. QPL types with JAN, JTX and JTXV processing levels are available as well as Hi Rei pro
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17a-0105a-01mrf5252n4428+14o-205ad2n5160f2n3866mrf313mrf536mrf515motorola selection mrf237mrf237 motorola2n3866 motorola2n3866 motorola s parameterss-parameter 2n4427mrf227mrf229mrf237
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msc diode
Abstract: 2N2708 Sertech Labs mrf892 1N6815 Microsemi New MOSFETs MS1631 2N4033 "RF MOSFETs" 15KW
Contextual Info: Fall 1998/Winter 1999 conditioning ThinKey Package in Production Microsemi's Santa Ana division is now in production on a complete line of hermetic rectifiers. These devices are offered in the Microsemi patented ThinKey package with RθJC ratings as low as 0.2oC/W. Available in strap to
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1998/winter1n68151n68171n6818+151n68201n68211n6823msaqx15g60kmsaqx25g60gmsaqx35g60lmsc diode2n2708sertech labsmrf892microsemi new mosfetsms16312n4033rf mosfets15kw
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2N3866 MOTOROLA s parameters
Abstract: 2N3866 MOTOROLA 2N2857 MOTOROLA 145A-09 MOTOROLA SELECTION mrf237 MRF229 MRF536 2N3553 motorola Transistor 2N3866 TO205AD
Contextual Info: characterized with y or s parameters; and in addition, there are non-saturated switching characteristics, low power driver spec ifications, and noise figure limits. QPL types with JAN, JTX and JTXV processing levels are available as well as Hi Rei pro
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17a-0105a-01mrf5252n4428+14o-205ad2n5160f2n3866mrf3132n3866 motorola s parameters2n3866 motorola2n2857 motorola145a-09motorola selection mrf237mrf229mrf5362n3553 motorolatransistor 2n3866to205ad
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