TRANSISTOR MN Search Results

MN1280

Abstract: KGT50N60kda bc547 smd transistor kia1117af transistor smd zG y6 smd transistor MB4213 y4 smd transistor smd transistor zaa KGT25N120NDA
Contextual Info: Table of Contents SMD THD ▣ Table of Contents 2 ▣ Bipolar Junction Transistor 4 Transistor Line-up PNP Transistor Transistor Line-up (NPN Transistor) Small Signal General Purpose Transistor Current Regulating Device Small Signal Low Noise Transistor

Contextual Info: UNISONIC TECHNOLOGIES CO., LTD MN2510 Preliminary NPN EPITAXIAL SILICON TRANSISTOR NPN TRANSISTOR  DESCRIPTION The UTC MN2510 is an NPN transistor, it uses UTC’s advanced technology to provide the customers with high DC current gain and high collector-emitter breakdown voltage, etc.

oz960

Abstract: khb*9D5N20P MB4213 KIA78*pI MN1280 F10P048 KIA7812A MJE13007 mb4213 equivalent TRANSISTOR SMD N2 3j
Contextual Info: Table of Contents Index 4 SMD ✞✟ Bipolar Junction Transistors Transistor Line-up PNP Transistor Transistor Line-up (NPN Transistor) Small Signal General Purpose Transistors Small Signal Low Noise Transistors Small Signal Audio Muting Transistors Small Signal High hFE Transistors

sc08820

Abstract: BUX10
Contextual Info: rrz SGS-THOMSON mneB@BiLgimrBB H8ie8_ ^7# BUX10 HIGH POWER NPN SILICON TRANSISTOR . . • . SGS-THOMSON PREFERRED SALESTYPE NPN TRANSISTOR HIGH CURRENT CAPABILITY FAST SWITCHING SPEED APPLICATIONS . MOTOR CONTROL . LINEAR AND SWITCHING INDUSTRIAL

la 4440 amplifier circuit diagram 300 watt

Abstract: la 4440 amplifier circuit diagram 300 watt diode LT 7229 2sd323 YM 7137 3D DA 3807 pdf transistor inverter welder 4 schematic 2N5630 THYRISTOR br 403 1N3492
Contextual Info: Alphanumeric Index Power Transistor Selector Guide Power Transistor Cross Reference Power Transistor Data Sheets Thyristor Selector Guide Thyristor Cross Reference Thyristor Data Sheets Leadforms, Hardware, and Mounting Techniques R ectifier and Zener Diode

KS524575

Contextual Info: mNBŒK KS524575 Powerex, Inc., 200 Hillis Street, Youngwood, Pennsylvania 15697-1800 412 925-7272 Single Darlington Transistor Module 75 Amperes/600 Volts OUTLINE DRAWING Description: The Powerex Single Darlington Transistor Modules are high power devices designed for use in

TC-3843

Abstract: tc3843 2SK735 3843
Contextual Info: NEC mN-CHANNEL MOS FIELD EFFECT POWER TRANSISTOR ELECTRON DEVICE DESCRIPTION 2SK735 The 2SK735 is N-channel MOS Field Effect Power Transistor PACKAGE DIM ENSIONS designed for switching power supplies, D C -D C converters. FEATURES in m illim eters inches

diode RU 3AM

Abstract: diode RU 4B RG-2A Diode diode RU 4AM MN638S FMM-32 SPF0001 red green green zener diode Diode RJ 4B sta464c
Contextual Info: Index by Part No. Part No. 130 Classification Page Part No. Classification Page 2SA1488 Power transistor 66 ATS611LSB Hall-Effect IC Subassembly 2SA1488A Power transistor 66 ATS612LSB Hall-Effect IC (Subassembly) 2SA1567 Power transistor 67 AU01 Fast-Recovery Rectifier Diode (Axial)

Contextual Info: , Una. 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. TELEPHONE: 973 376-2922 (212)227-6005 FAX: (973) 376-8960 2N3441 3 AMPERES NPN SILICON POWER TRANSISTOR NPN SILICON POWER TRANSISTOR . . . 2N3441 transistor is designed for use in general-purpose switching

diagram LG LCD TV circuits

Abstract: schematic LG TV lcd backlight inverter schematic LG lcd backlight inverter schematic diagram inverter 12v to 24v 30a lg lcd tv POWER SUPPLY SCHEMATIC lg led tv internal parts block diagram diagram power supply LG 32 in LCD TV circuits KIA78033F regulator KIA78 ic philips lcd tv inverter schematic
Contextual Info: LG LCD TV AUTOBAHN BOARD Part List First & Best KEC Products For LCD TV / Monitor http://www.keccorp.com Sales Engineering G 2006. 04. REV 3.31 First & Best KEC Products Line up for LCD TV & MNT IC’s Discrete Transistor G/P Transistor Power Regulator Management

2sb504

Abstract: KPL 3009 2SB502 BLY34 germanium BF316A BSX12 2SD716, 2SB686 35W amplifiers bf197 acy52
Contextual Info: TRANSISTOR DATA TABLES Other Titles of Interest B P 85 International Transistor Equivalents Guide B P286 A R eferen ce G uide to Basic Electronics Terms BP287 A R eferen ce G uide to Practical Electronics Terms n TRANSISTOR DATA TABLES by Hans-Gunther Steidle

transistor ITT

Contextual Info: January 1990 Edition 1.1 FUJITSU PRO DUCT P R O FILE 2SC2428 Silicon High Speed Power Transistor DESCRIPTION The 2SC 2428 is a silicon NPN general purpose, high power switching transistor fabricated with Fujitsu's unique Ring Emitter Transistor R E T technology. R E T

Contextual Info: mn JAN, JANTX, JANTXV 4N22U, 4N23U, 4N24U OPTOCOUPLERS o p to e le c tr o n ic p r o ; s division AVAILABLE THROUGH DISTRIBUTION FEATURES: • Base lead provided for conventional transistor biasing • Overall current gain.1.5 typical 4N24U • High gain, high voltage transistor

2SC4867

Abstract: 16T MARKING 2SC4871 FH201 ZS21 TA-1315 1hz OUTPUT 7CJE
Contextual Info: Ordering number:ENN6117 NPN Epitaxial Planar Silicon Composite Transistor FH201 SAÈÈYOI VCO OSC Circuit Applications Features Package Dimensions • C om p osite type w ith a buffer transistor 2 S C 4 8 7 1 and a oscillator transistor (2 S C 4 8 6 7 ) contained in

Contextual Info: fcT I ISI E G 2SC D • Ö235b05 G0G4352 T NPN Silicon Planar Transistor BD 424 T- 23- o f SIEMENS AKTIEN6ESELLSCHAF 25C 04352 BD 424 is an epitaxial NPN silicon planar transistor in a plastic package similar to TO 202. It is particularly intended for use as driver transistor in horizontal deflection stages of TV sets

Contextual Info: MITSUBISHI RF POWER TRANSISTOR 2SC2538 NPN EPITAXIAL PLANAR T Y P E DESCRIPTION OUTLINE DRAWING 2 S C 2 5 3 8 is a silico n N P N epitaxial planar type transistor designed Dim ensions in mn 0 5 .1 M AX fo r R F a m plifiers on V H F band m obile radio applications.

Contextual Info: High Speed Transistor Couplers Single/Dual Channel 8 Pin DIP Part M ih* m •m /im *. rM R im <52. 9 ImA 6N135 6N136 ICPL4502 Single channel Transistor Output 7 High C.M.R. 1 kv/tis. min 19 ICPL2533 Dual Channel Transistor Output «» F tm ■HT» f W M ilM M t a iilii .

SD 1062 transistor

Abstract: TRANSISTOR b100 D 1062 transistor
Contextual Info: Philips Semiconductors Product specification TrenchMOS transistor Standard level FET GENERAL DESCRIPTION N-channel enhancement mode logic level field-effect power transistor in a plastic envelope suitable for surface mounting. Using ’trench’ technology

SV180

Contextual Info: Philips Semiconductors Product specification TrenchMOS transistor Logic level FET GENERAL DESCRIPTION N-channel enhancement mode logic level field-effect power transistor in a plastic envelope suitable for surface mounting using ’trench’ technology.

Contextual Info: Philips Semiconductors Product specification TrenchMOS transistor Logic level FET GENERAL DESCRIPTION N-channel enhancement mode logic level field-effect power transistor in a plastic envelope suitable for surface mounting. Using ’trench’ technology

BUX100

Contextual Info: Philips Semiconductors Product specification Silicon diffused power transistor BUX100 GENERAL DESCRIPTION High voltage, high speed glass passivated npn power transistor in a SOT82 envelope intended for use in high frequency electronic lighting ballast applications.

buk555-60a

Contextual Info: Philips Semiconductors Product Specification PowerMOS transistor BUK555-60A/B Logic level GENERAL DESCRIPTION N-channel enhancement mode logic level field-effect power transistor in a plastic envelope. The device is intended for use in

transistor AHs

Contextual Info: Philips Semiconductors Product specification TrenehMOS transistor Logic level FET GENERAL DESCRIPTION N-channel enhancement mode logic level field-effect power transistor in a plastic envelope suitable for surface mounting Using ’trench’ technology

Contextual Info: Philips Semiconductors Product specification PowerMOS transistor Logic level FET GENERAL DESCRIPTION N-channel enhancement mode logic level field-effect power transistor in a plastic envelope. The device is intended for use in Automotive applications, Switched