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    TRANSISTOR MARKING RHS Search Results

    TRANSISTOR MARKING RHS Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    5962-8672601EA
    		Rochester Electronics LLC Parity Generator/Checker, S Series, 12-Bit, Inverted Output, TTL - Dual marked (93S48/BEA) PDF Buy
    54F151/BEA
    		Rochester Electronics LLC 54F151 - Multiplexer, 1-Func, 8 Line Input, TTL, CDIP16 - Dual marked (M38510/33901BEA) PDF Buy
    54F151/B2A
    		Rochester Electronics LLC 54F151 - Multiplexer, 1-Func, 8 Line Input, TTL, CQCC20 - Dual marked (M38510/33901B2A) PDF Buy
    5962-8672601FA
    		Rochester Electronics LLC Parity Generator/Checker, S Series, 12-Bit, Inverted Output, TTL - Dual marked (93S48/BFA) PDF Buy
    ICL7667MJA/883B
    		Rochester Electronics LLC ICL7667 - Buffer/Inverter Based MOSFET Driver, CMOS, CDIP8 - Dual marked (5962-8766001PA) PDF Buy

    TRANSISTOR MARKING RHS Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    SPICE 2G6

    Contextual Info: BFP183R NPN Silicon RF Transistor  For low noise, high-gain broadband amplifiers at collector currents from 2 mA to 28 mA  fT = 8 GHz F = 1.2 dB at 900 MHz ESD: Electrostatic discharge sensitive device, observe handling precaution! Type Marking BFP183R RHs


    Original     		BFP183R OT143R SPICE 2G6 PDF

    BFP183R

    Abstract: transistor marking RHs
    Contextual Info: BFP183R NPN Silicon RF Transistor  For low noise, high-gain broadband amplifiers at collector currents from 2 mA to 28 mA  fT = 8 GHz F = 1.2 dB at 900 MHz ESD: Electrostatic discharge sensitive device, observe handling precaution! Type Marking BFP183R RHs


    Original     		BFP183R OT143R 900MHz Aug-09-2001 BFP183R transistor marking RHs PDF

    1s211

    Abstract: 2I k
    Contextual Info: SIEMENS BFP 183R NPN Silicon RF Transistor • For low noise, high-gain broadband amplifiers at collector currents from 2 mA to 28 mA • fT = 8 GHz F = 1.2 dB at 900 MHz ESP: Electrostatic discharge sensitive device, observe handling precaution! Marking Ordering Code


    OCR Scan     		Q62702-F1594 OT-143R 900MHz 1S211 2I k PDF

    1117G

    Abstract: Q62702-F1493 GMA marking IC456
    Contextual Info: BFR 183W NPN Silicon RF Transistor • For low noise, high-gain broadband amplifiers at collector current from 2 mA to 30mA • fT = 8 GHz F = 1.2 dB at 900 MHz ESD: Electrostatic discharge sensitive device, observe handling precaution! Type Marking Ordering Code


    Original     		OT-323 Q62702-F1493 900MHz Dec-11-1996 1117G Q62702-F1493 GMA marking IC456 PDF

    BFR183W

    Contextual Info: SIEMENS BFR 183W NPN Silicon RF Transistor • For low noise, high-gain broadband amplifiers at collector current from 2 mA to 30mA • f j = 8 GHz F = 1.2 dB at 900 MHz ESP: Electrostatic discharge sensitive device, observe handling precaution! Marking Ordering Code


    OCR Scan     		Q62702-F1493 OT-323 900MHz BFR183W PDF

    Q62702-F1594

    Abstract: transistor marking RHs
    Contextual Info: BFP 183R NPN Silicon RF Transistor • For low noise, high-gain broadband amplifiers at collector currents from 2 mA to 28 mA • fT = 8 GHz F = 1.2 dB at 900 MHz ESD: Electrostatic discharge sensitive device, observe handling precaution! Type Marking Ordering Code


    Original     		OT-143R Q62702-F1594 900MHz Jan-21-1997 Q62702-F1594 transistor marking RHs PDF

    Q62702-F1503

    Abstract: marking 17 sot343 ZL 58
    Contextual Info: BFP 183W NPN Silicon RF Transistor • For low noise, high-gain broadband amplifiers at collector currents from 2 mA to 30 mA • fT = 8 GHz F = 1.2 dB at 900 MHz ESD: Electrostatic discharge sensitive device, observe handling precaution! Type Marking Ordering Code


    Original     		OT-343 Q62702-F1503 900MHz Dec-12-1996 Q62702-F1503 marking 17 sot343 ZL 58 PDF

    Contextual Info: SIEMENS BFP183W NPN Silicon RF Transistor • For low noise, high-gain broadband amplifiers at collector currents from 2 mA to 30 mA • fT = 8 GHz F= 1.2 dB at 900 MHz ESP: Electrostatic discharge sensitive device, observe handling precaution! Type Marking Ordering Code


    OCR Scan     		BFP183W Q62702-F1503 OT-343 fiE35bQ5 900MHz c15mA fl535b05 PDF

    Transistor BFR 14

    Abstract: Q62702-F1316 SIEMENS marking
    Contextual Info: BFR 183 NPN Silicon RF Transistor • For low noise, high-gain broadband amplifiers at collector current from 2 mA to 30mA • fT = 8 GHz F = 1.2 dB at 900 MHz ESD: Electrostatic discharge sensitive device, observe handling precaution! Type Marking Ordering Code


    Original     		OT-23 Q62702-F1316 Dec-11-1996 Transistor BFR 14 Q62702-F1316 SIEMENS marking PDF

    sot143 Marking code RHs

    Abstract: Q62702-F1382
    Contextual Info: BFP 183 NPN Silicon RF Transistor • For low noise, high-gain broadband amplifiers at collector currents from 2 mA to 30 mA • fT = 8 GHz F = 1.2 dB at 900 MHz ESD: Electrostatic discharge sensitive device, observe handling precaution! Type Marking Ordering Code


    Original     		OT-143 Q62702-F1382 900MHz Dec-13-1996 sot143 Marking code RHs Q62702-F1382 PDF

    Contextual Info: SIEMENS BFP 183 NPN Silicon RF Transistor • For low noise, high-gain broadband amplifiers at collector currents from 2 mA to 30 mA • fT = 8 GHz F = 1.2 dB at 900 MHz ESP: Electrostatic discharge sensitive device, observe handling precaution! Marking Ordering Code


    OCR Scan     		Q62702-F1382 OT-143 235bQ5 BFP183 900MHz PDF

    BFR18

    Abstract: BFR183W VSO05561 SPICE 2G6
    Contextual Info: BFR183W NPN Silicon RF Transistor 3  For low-noise, high-gain broadband amplifiers at collector currents from 2 mA to 30 mA  fT = 8 GHz F = 1.2 dB at 900 MHz 2 1 VSO05561 ESD: Electrostatic discharge sensitive device, observe handling precaution! Type Marking


    Original     		BFR183W VSO05561 OT323 BFR18 BFR183W VSO05561 SPICE 2G6 PDF

    Contextual Info: BFR183 NPN Silicon RF Transistor 3  For low-noise, high-gain broadband amplifiers at collector currents from 2 mA to 30 mA  fT = 8 GHz F = 1.2 dB at 900 MHz 2 1 VPS05161 ESD: Electrostatic discharge sensitive device, observe handling precaution! Type Marking


    Original     		BFR183 VPS05161 PDF

    Contextual Info: BFR183W NPN Silicon RF Transistor 3  For low-noise, high-gain broadband amplifiers at collector currents from 2 mA to 30 mA  fT = 8 GHz F = 1.2 dB at 900 MHz 2 1 VSO05561 ESD: Electrostatic discharge sensitive device, observe handling precaution! Type Marking


    Original     		BFR183W VSO05561 OT323 PDF

    BFR183W

    Abstract: VSO05561
    Contextual Info: BFR183W NPN Silicon RF Transistor 3  For low-noise, high-gain broadband amplifiers at collector currents from 2 mA to 30 mA  fT = 8 GHz F = 1.2 dB at 900 MHz 2 1 VSO05561 ESD: Electrostatic discharge sensitive device, observe handling precaution! Type Marking


    Original     		BFR183W VSO05561 OT323 900MHz Aug-09-2001 BFR183W VSO05561 PDF

    sot143 Marking code RHs

    Contextual Info: BFP183 NPN Silicon RF Transistor 3  For low-noise, high-gain broadband amplifiers at collector currents from 2 mA to 30 mA 4  fT = 8 GHz F = 1.2 dB at 900 MHz 2 1 VPS05178 ESD: Electrostatic discharge sensitive device, observe handling precaution! Type Marking


    Original     		BFP183 VPS05178 OT143 sot143 Marking code RHs PDF

    VSO05561

    Contextual Info: BFR 183W NPN Silicon RF Transistor 3  For low-noise, high-gain broadband amplifiers at collector currents from 2 mA to 30 mA  fT = 8 GHz F = 1.2 dB at 900 MHz 2 1 VSO05561 ESD: Electrostatic discharge sensitive device, observe handling precaution! Type Marking


    Original     		VSO05561 OT-323 900MHz Oct-25-1999 VSO05561 PDF

    S2126

    Contextual Info: BFR 183 NPN Silicon RF Transistor 3  For low-noise, high-gain broadband amplifiers at collector currents from 2 mA to 30 mA  fT = 8 GHz F = 1.2 dB at 900 MHz 2 1 VPS05161 ESD: Electrostatic discharge sensitive device, observe handling precaution! Type Marking


    Original     		VPS05161 OT-23 Oct-13-1999 S2126 PDF

    bfp183

    Abstract: VPS05178
    Contextual Info: BFP183 NPN Silicon RF Transistor 3  For low-noise, high-gain broadband amplifiers at collector currents from 2 mA to 30 mA 4  fT = 8 GHz F = 1.2 dB at 900 MHz 2 1 VPS05178 ESD: Electrostatic discharge sensitive device, observe handling precaution! Type Marking


    Original     		BFP183 VPS05178 OT143 900MHz Aug-10-2001 bfp183 VPS05178 PDF

    BFR183

    Abstract: transistor marking RHs
    Contextual Info: BFR183 NPN Silicon RF Transistor 3  For low-noise, high-gain broadband amplifiers at collector currents from 2 mA to 30 mA  fT = 8 GHz F = 1.2 dB at 900 MHz 2 1 VPS05161 ESD: Electrostatic discharge sensitive device, observe handling precaution! Type Marking


    Original     		BFR183 VPS05161 Aug-09-2001 BFR183 transistor marking RHs PDF

    Contextual Info: BFP183 NPN Silicon RF Transistor 3  For low-noise, high-gain broadband amplifiers at collector currents from 2 mA to 30 mA 4  fT = 8 GHz F = 1.2 dB at 900 MHz 2 1 VPS05178 ESD: Electrostatic discharge sensitive device, observe handling precaution! Type Marking


    Original     		BFP183 VPS05178 OT143 PDF

    BFP183

    Contextual Info: BFP183 NPN Silicon RF Transistor 3  For low-noise, high-gain broadband amplifiers at collector currents from 2 mA to 30 mA 4  fT = 8 GHz F = 1.2 dB at 900 MHz 2 1 VPS05178 ESD: Electrostatic discharge sensitive device, observe handling precaution! Type Marking


    Original     		BFP183 VPS05178 OT143 BFP183 PDF

    Contextual Info: SIEMENS BFR 183 NPN Silicon RF Transistor • For low noise, high-gain broadband amplifiers at collector current from 2 mA to 30mA • /f = 8 GHz F = 1.2 dB at 900 MHz RHs Q62702-F1316 1= B li O BFR 183 CO ESP: Electrostatic discharge sensitive device, observe handling precaution!


    OCR Scan     		Q62702-F1316 OT-23 BFR183 900MHz PDF

    Contextual Info: SIEMENS BFP183R NPN Silicon RF Transistor • For low noise, high-gain broadband amplifiers at collector currents from 2 mA to 28 mA • fT = 8 GHz F = 1.2 dB at 900 MHz ESP: Electrostatic discharge sensitive device, observe handling precaution! BFP 183R RHs


    OCR Scan     		BFP183R Q62702-F1594 OT-143R 76VBE 900MHz a535fc PDF