TRANSISTOR MARKING NK Search Results

GN4L3M

Contextual Info: DATA SHEET SILICON TRANSISTOR GN4xxx RESISTOR BUILT-IN TYPE PNP TRANSISTOR PACKAGE DRAWING Unit: mm FEATURES 0.3 +0.1 −0 • Compact package 0.15 +0.1 −0.05 Marking • Resistors built-in type • Complementary to GN4xxx ORDERING INFORMATION PART NUMBER

D1649

Abstract: r2kv GN4L3M
Contextual Info: DATA SHEET SILICON TRANSISTOR GN4xxx RESISTOR BUILT-IN TYPE PNP TRANSISTOR PACKAGE DRAWING Unit: mm FEATURES • Compact package 0.3 +0.1 −0 0.15 +0.1 −0.05 • Resistors built-in type Marking • Complementary to GA4xxx PART NUMBER PACKAGE GN4xxx SC-70

D1649

Abstract: fn4l3n FN4F4M
Contextual Info: DATA SHEET SILICON TRANSISTOR FN4xxx RESISTOR BUILT-IN TYPE PNP TRANSISTOR FEATURES PACKAGE DRAWING Unit: mm • Compact package +0.1 0.65 –0.15 • Resistors built-in type • Complementary to FA4xxx 0.4 +0.1 –0.05 +0.1 0.16 –0.06 Marking PACKAGE

R24020

Contextual Info: DATA SHEET SILICON TRANSISTOR FN4xxx RESISTOR BUILT-IN TYPE PNP TRANSISTOR ★ PACKAGE DRAWING Unit: mm FEATURES 0.65 –0.15 • Compact package +0.1 • Resistors built-in type • Complementary to FA4xxx 0.4 +0.1 –0.05 +0.1 0.16 –0.06 Marking PACKAGE

D1649

Abstract: GN4L3M
Contextual Info: DATA SHEET SILICON TRANSISTOR GN4xxx RESISTOR BUILT-IN TYPE PNP TRANSISTOR ★ PACKAGE DRAWING Unit: mm FEATURES • Compact package 0.3 +0.1 −0 • Resistors built-in type 0.15 +0.1 −0.05 Marking • Complementary to GA4xxx ORDERING INFORMATION PART NUMBER

infineon marking W1s SOT23

Abstract: marking W1S sot23 infineon marking W1s transitor RF 98 BFT92 bft92 datasheet w1s sot23 30227 BFR92p application note marking code 10 sot23
Contextual Info: BFT92 PNP Silicon RF Transistor • For broadband amplifiers up to 2 GHz at collector currents up to 30 mA 2 3 • Complementary type: BFR92P NPN 1 ESD (Electrostatic discharge) sensitive device, observe handling precaution! Type BFT92 Marking W1s Pin Configuration

Contextual Info: KSD1621 NPN Epitaxial Silicon Transistor Features • High Current Driver Applications • Low Collector-Emitter Saturation Voltage • Large Current Capacity and Wide SOA • Fast Switching Speed • Complement to KSB1121 Marking 1 1 6 2 1 P Y W W SOT-89

tm 1621

Abstract: qs marking sot-89 QS 100 NPN Transistor KSB1121 KSD1621 KSD1621RTF KSD1621STF KSD1621TTF KSD1621UTF MARKING CODE B3 sot-89
Contextual Info: KSD1621 NPN Epitaxial Silicon Transistor Features • High Current Driver Applications • Low Collector-Emitter Saturation Voltage • Large Current Capacity and Wide SOA • Fast Switching Speed • Complement to KSB1121 Marking 1 1 6 2 1 P Y W W SOT-89

A1807

Abstract: pnp transistor 600V 2SA1807F5 transistor marking code NW transistors 2SA transistor 2SA 6 J transistor 2SA 600v PNP -600v
Contextual Info: 2S A 1807F5 Transistor, PNP Features • available in CPT F5 SC-63 package • package marking: A1807-AQ, where ★ is hFE code and □ is lot number • high breakdown voltage, BVceo = ~600 V • low collector saturation voltage, typically VCE(sat) = -0.25 V for

Contextual Info: BFR949T NPN Silicon RF Transistor • For low noise, high-gain broadband amplifiers at collector currents from 1 mA to 20 mA 2 3 1 • fT = 9 GHz, F = 1 dB at 1 GHz ESD Electrostatic discharge sensitive device, observe handling precaution! Type BFR949T Marking

Contextual Info: BFR949T NPN Silicon RF Transistor 3
For low noise, high-gain broadband amplifiers at collector currents from 1 mA to 20 mA
f T = 9 GHz F = 1.0 dB at 1 GHz 2 1 VPS05996 ESD: Electrostatic discharge sensitive device, observe handling precaution! Type Marking

BFR949T

Abstract: MA457 MARKING C6 BFR94
Contextual Info: BFR949T NPN Silicon RF Transistor • For low noise, high-gain broadband amplifiers at collector currents from 1 mA to 20 mA 2 3 1 • fT = 9 GHz, F = 1 dB at 1 GHz ESD Electrostatic discharge sensitive device, observe handling precaution! Type BFR949T Marking

BFR94

Contextual Info: BFR949T NPN Silicon RF Transistor 3
For low noise, high-gain broadband amplifiers at collector currents from 1 mA to 20 mA
f T = 9 GHz F = 1.0 dB at 1 GHz 2 1 VPS05996 ESD: Electrostatic discharge sensitive device, observe handling precaution! Type Marking

BFR949T

Abstract: SC75 GMA marking
Contextual Info: BFR949T NPN Silicon RF Transistor 3
For low noise, high-gain broadband amplifiers at collector currents from 1 mA to 20 mA
f T = 9 GHz F = 1.0 dB at 1 GHz 2 1 VPS05996 ESD: Electrostatic discharge sensitive device, observe handling precaution! Type Marking

marking CODE n3 6PIN

Abstract: MOSFET TRANSISTOR SMD MARKING CODE nh INK0001AC RT8H 2SA798 equivalent 2SC2259 marking code NJ SMD Transistor MC931 diode smd transistor marking A7 p7 transistor smd marking ka p7
Contextual Info: ２０１０年３月版 Sales Guide セールスガイド 小信号トランジスタダイオード/リニアIC Small Signal TransistorＤiodes / Linear IC 目次 INDEX 形名について The Type Name of the Transistor ･･･････････････････････････････ 2

Infineon Technologies transistor 4 ghz

Abstract: BFR193L3 infineon marking code L2 1B marking transistor INFINEON transistor marking C5 MARKING TRANSISTOR
Contextual Info: BFR193L3 NPN Silicon RF Transistor* • For low noise, high-gain amplifiers up to 2 GHz • For linear broadband amplifiers 3 • fT = 8 GHz, F = 1 dB at 900 MHz 1 2 • Pb-free RoHS compliant package 1) • Qualified according AEC Q101 * Short term description

Infineon Technologies transistor 4 ghz

Abstract: BFR193L3 BFR340L3 BFR34* transistor marking FA
Contextual Info: BFR340L3 NPN Silicon RF Transistor* • Low voltage/ Low current operation • Transition frequency of 14 GHz 3 • High insertion gain 1 2 • Ideal for low current amplifiers and oscillators • Pb-free RoHS compliant package 1) • Qualified according AEC Q101

C5 MARKING TRANSISTOR

Abstract: infineon marking code L1 Infineon Technologies transistor 4 ghz BFR193L3 BFR380L3 INFINEON transistor marking MARKING CODE 21E infineon marking code L2
Contextual Info: BFR380L3 NPN Silicon RF Transistor* • High current capability and low figure for wide dynamic range application 3 • Low voltage operation 1 2 • Ideal for low phase noise oscillators up to 3.5 GHz • Low noise figure: 1.1 dB at 1.8 GHz • Pb-free RoHS compliant package 1)

BFR360L3

Abstract: BFR193L3
Contextual Info: BFR360L3 NPN Silicon RF Transistor* • Low voltage/ Low current operation • For low noise amplifiers 3 • For Oscillators up to 3.5 GHz and Pout > 10 dBm 1 2 • Low noise figure: 1.0 dB at 1.8 GHz • Pb-free RoHS compliant package 1) • Qualified according AEC Q101

Contextual Info: BFR193L3 NPN Silicon RF Transistor Preliminary data
For low noise, high-gain amplifiers up to 2 GHz 3
For linear broadband amplifiers
fT = 8 GHz 1 F = 1.2 dB at 900 MHz 2 ESD: Electrostatic discharge sensitive device, observe handling precaution! Type

BFR193L3

Abstract: BFR340L3 marking FA
Contextual Info: BFR340L3 NPN Silicon RF Transistor* • Low voltage/ Low current operation • Transition frequency of 14 GHz 3 1 • High insertion gain 2 • Ideal for low current amplifiers and oscillators * Short term description ESD Electrostatic discharge sensitive device, observe handling precaution!

infineon marking L2

Abstract: BFR193L3
Contextual Info: BFR193L3 NPN Silicon RF Transistor* • For low noise, high-gain amplifiers up to 2 GHz • For linear broadband amplifiers 3 1 • fT = 8 GHz, F = 1 dB at 900 MHz 2 * Short term description ESD Electrostatic discharge sensitive device, observe handling precaution!

BFR193L3

Abstract: BFR380L3 marking FC
Contextual Info: BFR380L3 NPN Silicon RF Transistor* • High current capability and low figure for wide dynamic range application 3 1 • Low voltage operation 2 • Ideal for low phase noise oscillators up to 3.5 GHz • Low noise figure: 1.1 dB at 1.8 GHz * Short term description

marking FC

Contextual Info: BFR380L3 NPN Silicon RF Transistor Preliminary data
High current capability and low figure for 3 wide dynamic range application
Low voltage operation
Ideal for low phase noise oscillators up to 3.5 GHz 1 2
Low noise figure: 1.1 dB at 1.8 GHz ESD: Electrostatic discharge sensitive device, observe handling precaution!