TRANSISTOR MARKING MK Search Results

3BS transistor

Abstract: S0642
Contextual Info: rz 7 ^ 7# SGS-THOMSON R L ie r a « S 0 6 4 2 SMALL SIGNAL NPN TRANSISTOR Type Marking SO 642 N91 . SILICON EPITAXIAL PLANAR NPN TRANSISTOR . MINIATURE PLASTIC PACKAGE FOR APPLICATION IN SURFACE MOUNTING CIRCUITS . HIGH VOLTAGE TRANSISTOR FOR VIDEO AMPLIFIER

transistor EKs

Abstract: transistor marking code 7C marking BSs sot23 transistor EKs 80 BCX41 marking AMs 4 pin bss 100 transistor marking BSs sot23 siemens
Contextual Info: SIEMENS NPN Silicon AF and Switching Transistor BCX 41 BSS 64 • High breakdown voltage • Low collector-emitter saturation voltage • Complementary types: BCX 42, BSS 63 PNP Type Marking Ordering Code (tape and reel) Pin Configuration 1 2 3 Package1)

marking h3

Abstract: SC08810 od31
Contextual Info: F Z J S G S - T H O M S O N Ä 7 # Me^iLliOTSMIgS BCW89 SMALL SIGNAL PNP TRANSISTOR Type Marking BCW89 H3 . SILICON EPITAXIAL PLANAR PNP TRANSISTORS • MINIATURE PLASTIC PACKAGE FOR APPLICATION IN SURFACE MOUNTING CIRCUITS . LOW LEVEL AUDIO-AMPLIFICATION AND

BSP320

Contextual Info: SIEMENS BSP 320 S SIPMOS Small-Signal Transistor • N channel • Enhancement mode • Avalanche rated • W = 2-1 - 4 0 V Type Vos k) R DS on) Package BSP 320 S 60 V 2.9 A 0.12 Q SOT-223 Marking Ordering Code Q67000-S4001 Maximum Ratings Parameter Symbol

BFR92a MARKING P2

Abstract: MAR 641 TRANSISTOR sot-23 marking RIP ha 1452 BFR92A
Contextual Info: T em ic BFR92A/BFR92AR S e m i c o n d u c t o r s Silicon NPN Planar RF Transistor Applications Wide band amplifier up to GHz range. Features • High power gain • Low noise figure • High transition frequency BFR92A Marking: + P2 Plastic case SOT 23

Contextual Info: r i 7 SGS-THOMSON ^7# e U STO «! S O A 56 SMALL SIGNAL PNP TRANSISTOR Type Marking SOA56 2GT . SILICON EPITAXIAL PLAN AR PN P T R A N S IS T O R S • MINIATURE P LA ST IC P A C K A G E FO R APPLICATION IN S U R F A C E MOUNTING CIR C U IT S . MEDIUM C U R R E N T A F AMPLIFICATION

transistor BUX 44

Abstract: transistor BUX BUX87 bux86 transistor BF 414
Contextual Info: A TELEFUNKEN ELECTRONIC 17E D • 0 ^ 2 0 0 % OOb'iST? ? ■ AL66 BUX 86 - BUX 87 TTIUIFy MKIM electronic Creative Tfechnotog* * T - 2 3 - D 9 Silicon NPN Power Transistors Applications: Switching mode power supply, driver circuits Features: • in multi diffusion technique

Contextual Info: N AMER PHILIPS/DISCRETE ObE D LbSBTBl 0015037 T • _ JL MAINTENANCE TYPE MKB12040WS T - 3 3 - II NPN silicon transistor intended for use in military and professional applications. It operates only in pulsed conditions and is recommended for IF F applications at 1,09 GHz.

Contextual Info: _ I I N AMER PHILIPS/DISCRETE ObE D • _ bbS3T31 OD1SD41 1 MAINTENANCE TYPE MKB12140W T -3 3 -IS PULSED MICROW AVE POWER TRANSISTOR NPN silicon transistor intended for use in military and professional applications. It operates only in

MKB12100WS

Abstract: RTC 1100 RTC1100 rtc1100s 71A marking B1210 marking AFS
Contextual Info: N^^MER PHILIPS/DISCRETE ObE D bkSBTBl 001503^ 3 MAINTENANCE TYPE MKB12100WS T-3S-13 PULSED MICROWAVE POWER TRANSISTOR NPN silicon transistor intended for use in military and professional applications. It operates only in pulsed conditions and is recommended for IFF applications.

Contextual Info: N^j^riER P H IL IP S/ D IS C R ET E DtE D ^ 53*131 0 0 1 5 0 3 1 MAINTENANCE TYPE 3 MKB12100WS T-3S-I3 PULSED M ICROW AVE POW ER TRANSISTOR NPN silicon transistor intended for use in military and professional applications. It operates only in pulsed conditions and is recommended for IF F applications.

rtc1040s

Abstract: MKB12040WS rtc10 rtc1040 BA35331
Contextual Info: N AMER PHILIPS/DISCRETE ObE D • ^ 5 3 ^ 3 1 DG1S037 T ■ J MAINTENANCE TYPE MKB12040WS T - 33 - II PULSED MICROWAVE POWER TRANSISTOR NPN silicon transistor intended fo r use in m ilitary and professional applications. It operates only in pulsed conditions and is recommended fo r IF F applications a t 1 ,09 G Hz.

MKB12140W

Abstract: common base amplifier circuit designing
Contextual Info: _I I N AMER P HI LI PS/DISCRETE ObE D _ • 0015041 1 MAINTENANCE TYPE MKB12140W T - 33—iS PULSED MICROWAVE POWER TRANSISTOR NPN silicon transistor intended for use in m ilitary and professional applications. It operates only in pulsed conditions and is recommended for IF F applications.

Contextual Info: PK-00065 Rev. A Page: 2/4 TITLE: AOS Packing SPEC for TO247 1 PURPOSE This specification shall serve as the basic spec for packing and labeling of the assembled AOS parts at all subcontractors. 2 SCOPE TO247 in all subcontractors. 3 REFERENCE DOCUMENT AOS Marking SPEC: MK-00001

transistor Bc 542

Abstract: transistor bc 564 marking EB 202 transistor transistor A 564 Transistors marking WZ PM564 2574 transistor transistor BF 52 SOT-23 marking aeg 883S
Contextual Info: « I TELEFUNKEN ELECTRONIC 17E D 0 *1 2 0 0 ^ O D D ^ S * BF 883 S TT1 IL1 IRUIMIKI1M electronic C ru fta Ttahnofog*« T -3 3 -0 € T Silicon NPN Epitaxial Planar RF Transistor Applications: Video B-class power stages in TV receivers Features: No /?F£-drift dependent of temperature

BFY88

Abstract: Telefunken u 237 transistor marking code 2C BFY 88 telefunken C80 ui77 silicon npn planar rf transistor sot 143 IMB 06 C BFY 52 transistor 95288
Contextual Info: TELEFUNKEN ELECTRONIC m ilp y M IM electronic Ö1C D • fi^SOQRb 0005332 b 'T- BFY 88 Creative Technologies Silicon NPN Epitaxial Planar RF Transistor Applications: VHF amplifier stages, pre-stages In common emitter configuration Oscillating mixer stages in common base configuration

2SC5586 equivalent

Abstract: 2sc5586 2sa1694 equivalent 2SC5487 transistor 2SC5586 STR83159 em 234 stepper SE090 SK 5154S 2SK3460 equivalent
Contextual Info: CAUTION / WARNING • The information in this publication has been carefully checked and is believed to be accurate; however, no responsibility is assumed for inaccuracies. • Sanken reserves the right to make changes without further notice to any products herein in the interest of improvements

transistor t2a 82

Abstract: transistor 81 110 w 85 transistor BUT 12 transistor BC 245 BUT76A transistor BF 245 MARKING NJ CODE SOT 23 TRANSISTOR BI 237 marking 712 marking va transistors
Contextual Info: TELEFUNKEN ELECTRONIC 17E D • f l ^ O O U 000^533 BUT 76 BUT 76 A TTilUliFOiMISlIMelectronic C m to* HichnotoQits T '3 3 -i3 S ilic o n NPN P o w er T ra n sisto rs Applications: Switching mode power supply, inverters, motor control and relay driver Features:

Transistor 4515

Abstract: CF300 transistor D 4515 lm 4580 Telefunken u 237 sot-23 MARKING CODE ZA SY 180/4 TRANSISTOR BC 414 W-25 CF-300
Contextual Info: TELEFUNKEN ELECTRONIC 0029426A E G CORP Û1C D • fl^EDGTb 000535*1 4 D \ 8ÏC 0 53 59~ CF 300 IFGlGJiiFOJMllXIK] electronic Creative Technologies N-Channel-GaAs-MESFET-Tetrode Depletion Mode Applications: Gain controlled amplifiers and mixers up to 2 GHz In common source configuration;

BF960

Abstract: t187 BF-960 BF960 TELEFUNKEN GDDS530 Telefunken u 237 BF 22 W transistor bf 237 BF 606 a0lv
Contextual Info: oc TELEFUNKEN ELECTRONIC V fllC D 6 1 2 0 0 % DDDS530 *i • ALG6 T~3i - Xjr~ ■ miSPMMEN electronic BF 960 Creative Technologies j i N-Channel Dual Gate MOS-Fieldeffect Tetrode >Depletion Mode Applications: Input- and Mixerstages especially for UHFTV-tuners up to 900 MHz

lc 945 p transistor

Abstract: 362-0 transistor
Contextual Info: T em ig S852T S e m i c o n d u c t o r s Silicon NPN Planar RF Transistor Electrostatic sensitive device. Observe precautions for handling. mk Applications For low-noise and high-gain broadband amplifiers at collector currents from 0.2 mA to 5 mA. Features

TRANSISTOR 2N338

Abstract: 2N338 2N337 SFWM marking YJ AM 2N3384 2N338 JAN zn338 2 TMT 15-4
Contextual Info: iiU M 'U 'ivuw / gva ¿2 H o v te ttr 1971 SUPERSEDING _ Û1LL.-0-lÖÖÖO/ÖWD 4 Mafflh tOM MILITARY SPECIFICATION SEMICONDUCTOR DEVICE, TRANSBTOR, NPN, SILICON, LOW-POWER TYPES 2N337 AND 2N338 This specification la mandatory for use bv all Departmeats and Agencies of the Department of Defense.

Contextual Info: GTO Kondensatoren für hohe Strombelastungen GTO capacitors for high current carrying capability WIMA GTO MKP Kondensatoren sind speziell zur Bedämpfung von Spannungsspitzen an GTO-Thyristoren und IGBT entwickelte Bauelemente. Sie werden im Trockenverfahren mit einer metallisierten Polypropylenfolie gewickelt

Contextual Info: FMS3/FMS4/IMT4 FMW3 / FMW4 / IMX8 Transistors I General Purpose Dual Transistors FMS3 / FMS4 / IMT4 •F eatures •A bsolu te maximum ratings {TasB25‘0 1 ) Two 2SA1514K chips are housed in an SM T package. 2 ) High breakdown voltage. Parameter Col lector-base voltage