TRANSISTOR MARK PH Search Results

486DX-CPU

Abstract: tamagawa 486DX transistors mos retrograde well 0.35
Contextual Info: MOS Scaling: Transistor Challenges for the 21st Century Scott Thompson, Portland Technology Development, Intel Corp. Paul Packan, Technology Computer Aided Design, Intel Corp. Mark Bohr, Portland Technology Development, Intel Corp. Index words: SDE, transistor, scaling

Contextual Info: < Silicon RF Power MOS FET Discrete > RD05MMP1 RoHS Compliance, Silicon MOSFET Power Transistor, 941MHz, 5.5W (a) OUTLINE DRAWING (b) (b) 7.0+/-0.2 0.2+/-0.05 RD05MMP1 is a MOS FET type transistor 0.65+/-0.2 DESCRIPTION 8.0+/-0.2 FEATURES (4.5) INDEX MARK

MARK "326" FET

Abstract: transistor 3669
Contextual Info: < Silicon RF Power MOS FET Discrete > RD05MMP1 RoHS Compliance, Silicon MOSFET Power Transistor, 941MHz, 5.5W (a) OUTLINE DRAWING 7.0+/-0.2 0.2+/-0.05 RD05MMP1 is a MOS FET type transistor (b) (b) 0.65+/-0.2 DESCRIPTION 8.0+/-0.2 FEATURES (4.5) INDEX MARK

transistor 21 2u

Abstract: EMD38 DTA113Z DTC114Y EMT6 d38 marking transistor
Contextual Info: EMD38 Transistors General purpose transistor isolated transistors EMD38 DTC114Y and DTA113Z are housed independently in a EMT6 package. zDimensions (Unit : mm) zApplications Driver EMT6 1.6 (6) (5) (4) 1pin mark (1) (2) (3) 0.22 zStructure NPN / PNP Silicon epitaxial planar digital transistor

MTD6180

Abstract: MTE1070A
Contextual Info: I flE D 5 7 ^ 5 5 GGD04Q4 4 PHOTO TRANSISTOR MARK TECH INTERNATIONAL MTD6180 SILICON NPN EPITAXIAL PLANAR - I— t 1 I SILICON PHOTO TRANSISTOR FOR PHOTO SENSOR u S fc d J K' L M APPLICATIONS • OPTICAL SWITCH F —H • INTER R U PTER 1. EMITTER 2. COLLECTOR

Contextual Info: MMBT3646 NPN Switching Transistor Features 3 • NPN High Speed Switching Transistor • Process 22 2 1 SOT-23 1. Base 2. Emitter 3. Collector Ordering Information Part Number Top Mark Package Packing Method MMBT3646 23 SOT-23 3L Tape and Reel Absolute Maximum Ratings

CNZ1105

Abstract: ON1105
Contextual Info: Transmissive Photosensors Photo lnterrupters CNZ1105 (ON1105) Unit: mm Photo Interrupter 14.3±0.3 Mark for Indicating LED side Symbol Rating Unit VR 3 V IF 50 mA PD 75 mW Output (Photo Collector-emitter voltage (Base open) transistor) VCEO 30 V Emitter-collector voltage

transistor rf m 1104

Contextual Info: < Silicon RF Power MOS FET Discrete > RD02MUS1 RoHS Compliance,Silicon MOSFET Power Transistor 175MHz,520MHz,2W DRAWING DESCRIPTION 0.2+/-0.05 specifically designed for VHF/UHF RF power 1 1.0+/-0.05 4.9+/-0.15 amplifiers applications. FEATURES 2 INDEX MARK

audio transistor 274

Abstract: MJ*15033 thermaltrak NJL1302D NJL3281D mje15033 MJL1302A MPSa06 equivalent 1N4148 MJE15032
Contextual Info: AND8196/D ThermalTrakt Audio Output Transistors Prepared by: Mark Busier ON Semiconductor http://onsemi.com APPLICATION NOTE Each of the ThermalTrak audio output devices incorporates Ultrafast diode technology as the temperature sensing device along with the audio output transistor.

diode gp 434

Abstract: RD07MVS2 diode zener 7.2v RD07MVS1 T112 318 MARKING DIODE
Contextual Info: MITSUBISHI RF POWER MOS FET ELECTROSTATIC SENSITIVE DEVICE RD07MVS2 OBSERVE HANDLING PRECAUTIONS RoHS Compliance,Silicon MOSFET Power Transistor,175MHz,520MHz,7W DESCRIPTION OUTLINE DRAWING 0.22 2.0+/-0.05 1.0+/-0.05 2 3.5+/-0.05 1 3 (0.25) INDEX MARK (Gate)

KSA1013

Contextual Info: KSA1013 PNP Epitaxial Silicon Transistor Features • Color TV Audio Output • Color TV Vertical Deflection Output 1 TO-92L 1. Emitter 2. Collector 3. Base Ordering Information Part Number Top Mark Package Packing Method KSA1013YBU KSA1013OBU KSA1013YTA Bulk

KSC1815YTA

Abstract: ksc1815
Contextual Info: KSC1815 NPN Epitaxial Silicon Transistor Features • Audio Frequency Amplifier & High Frequency OSC • Complement to KSA1015 • Collector-Base Voltage: VCBO = 50 V 1 TO-92 1. Emitter 2. Collector 3. Base Ordering Information Part Number Top Mark Package

Contextual Info: FSB749 PNP Low Saturation Transistor Description C These devices are designed with high-current gain and low saturation voltage with collector currents up to 3 A continuous. Sourced from process PC. E B SuperSOTTM-3 Ordering Information Part Number Top Mark

Contextual Info: KSC1815 NPN Epitaxial Silicon Transistor Features • Audio Frequency Amplifier and High-Frequency OSC • Complement to KSA1015 • Collector-Base Voltage: VCBO = 50 V 1 TO-92 1. Emitter 2. Collector 3. Base Ordering Information Part Number Top Mark Package

KSA1015YTA

Contextual Info: KSA1015 PNP Epitaxial Silicon Transistor Features • Low-Frequency Amplifier • Collector-Base Voltage: VCBO = -50 V • Complement to KSC1815 1 TO-92 1. Emitter 2. Collector 3. Base Ordering Information Part Number Top Mark Package Packing Method KSA1015GRTA

Contextual Info: BC63916 NPN Epitaxial Silicon Transistor Features • Switching and Amplifier Applications 1 TO-92 1. Emitter 2. Collector 3. Base Ordering Information Part Number Top Mark Package Packing Method BC63916_D74Z BC639-16 TO-92 3L Ammo BC63916_D27Z BC639-16 TO-92 3L

diode gp 434

Abstract: RD07MVS1 RD07MVS2 T112 07MVS1 PO520 zener gp 434
Contextual Info: MITSUBISHI RF POWER MOS FET ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS RD07MVS2 RoHS Compliance,Silicon MOSFET Power Transistor,175MHz,520MHz,7W DESCRIPTION 2.0+/-0.05 2 INDEX MARK Gate For output stage of high power amplifiers In VHF/UHF band mobile radio sets.

MG50G2CL3

Abstract: TF1204 MG50G2cl3 toshiba gtr driver 05il
Contextual Info: TOSHIBA TF1204 TOSHIBA SOLID STATE GTR DRIVER MODULE TF1204 GTR DRIVER Unit in mm 9MAX. 30 MAX. TOSHIBA TF1204 is the GTR driver designed for use with TOSHIBA Giant Transistor Module and it includes the , TYPE \ MARK optical isolator and GTR driver circuit.

pn2907

Contextual Info: PN2907 / MMBT2907 PNP General-Purpose Transistor Description This device is designed for use with general-purpose amplifiers and switches requiring collector currents to 500 mA. Sourced from process 63. MMBT2907 PN2907 C E TO-92 SOT-23 Mark:2B EBC B Ordering Information

transistor A6A

Contextual Info: RSS060P05 Transistor 4V Drive Pch MOSFET RSS060P05 zStructure Silicon P-channel MOSFET zDimensions Unit : mm SOP8 5.0 1.75 0.4 (5) (1) (4) 1pin mark 0.4Min. 3.9 6.0 zFeatures 1) Built-in G-S Protection Diode. 2) Small and Surface Mount Package (SOP8). (8)

TRANSISTOR D 1765

Abstract: transistor mosfet 4425 1776 48T08 TRANSISTOR D 1765 720 T72 MARKING 1788
Contextual Info: < Silicon RF Power MOS FET Discrete > RD09MUP2 RoHS Compliance, Silicon MOSFET Power Transistor, 520MHz, 8W DESCRIPTION (a) (b) 7.0+/-0.2 0.2+/-0.05 FEATURES (4.5) INDEX MARK [Gate] 2.6+/-0.2 0.95+/-0.2 •High power gain: Pout>8W, Gp>10dB@Vdd=7.2V,f=520MHz

IRF540 n-channel MOSFET BATTERY CHARGER

Abstract: 1rf530 IRF540 irf520 comparison UNITRODE applications handbook UNITRODE product and applications handbook H. Dean Venable schematic diagram 72vdc battery charger 48V to 12V buck transformer RF520 HEXFET Power MOSFET designer manual
Contextual Info: UNITRODE CORPORATION U-167 UC3578 TELECOM BUCK CONVERTER EVALUATION BOARD By Mark Dennis Unitrode Corporation ABSTRACT This application note describes a simple solution for a buck converter operating from an input of 15V to 72V with an N channel MOSFET switching transistor. Using this switch configuration requires a gate potential higher than the input

Contextual Info: FJX3906 PNP Epitaxial Silicon Transistor Feature • General-Purpose Transistor 3 2 1 SC-70 1. Base 2. Emitter 3. Collector Ordering Information Part Number Top Mark Package Packing Method FJX3906TF S2A SC70 3L Tape and Reel Absolute Maximum Ratings Stresses exceeding the absolute maximum ratings may damage the device. The device may not function or be operable above the recommended operating conditions and stressing the parts to these levels is not recommended. In addition, extended exposure to stresses above the recommended operating conditions may affect device reliability. The

TRANSISTOR DNH

Abstract: PS5022 PS1191RA PP1101W PS1101RA PS1101WA PS1102HA PS1192FA PS1192HA peak spectral response 900 nm photo detector
Contextual Info: CHARACTERISTICS AND ABSOLUTE MAXIMUM RATING BY MATERIAL n Photo Transistor Through-Hole Shape Absolute Maximum Ratings Collector-Emitter Emitter-Collector Breakdown Collector Breakdown Collector Operating Voltage Dissipation Voltage Current Temp. Part Number