EMT6 Search Results

Contextual Info: EMB51 Datasheet Complex Digital Transistors Bias Resistor Built-in Transistors l Outline Parameter DTr1 and DTr2 VCC -50V IC(MAX.) -100mA R1 22kΩ EMB51 R2 22kΩ (SC-107C) EMT6 l Features 1) Two DTA024E chips in a EMT6 package.

Contextual Info: EMD30 NPN + PNP Complex Digital Transistors Bias Resistor Built-in Transistors Datasheet lOutline <For DTr1(NPN)> Parameter Value VCC 50V 100mA 10kW 10kW IC(MAX.) R1 R2 EMT6 (6) (5) (4) (1) (2) (3) EMD30 (SC-107C) <For DTr2(PNP)> Parameter Value VCC -30V

Contextual Info: EMD59 Datasheet Complex Digital Transistors Bias Resistor Built-in Transistors <For DTr1(NPN)> l Outline Parameter Value VCC 50V IC(MAX.) 100mA R1 10kΩ EMD59 R2 47kΩ (SC-107C) EMT6 <For DTr2(PNP)>

Contextual Info: EMD53 Datasheet Complex Digital Transistors Bias Resistor Built-in Transistors <For DTr1(NPN)> l Outline Parameter Value VCC 50V IC(MAX.) 100mA R1 10kΩ EMD53 R2 10kΩ (SC-107C) EMT6 <For DTr2(PNP)>

2SA20

Abstract: "dual TRANSISTORs" resistance dual audio circuit diagram 2SA2018 2SK3019
Contextual Info: EMF6 Transistors Power management dual transistors EMF6 2SA2018 and 2SK3019 are housed independently in a EMT6 package. (2) 0.5 0.5 1.0 1.6 (3) (4) (5) (1) 1.2 1.6 0.5 (6) 0.13 !Features 1) Power switching circuit in a single package. 2) Mounting cost and area can be cut in half.

DTC144E

Abstract: EMF20 UMF20N
Contextual Info: EMF20/UMF20N Transistors Power management dual transistors EMF20/UMF20N 2SC4617and DTC144E are housed independently in a EMT6 or UMT6 package. zApplication Power management circuit zExternal dimensions (Units : mm) 0.22 zFeatures 1) Power switching circuit in a single package.

Contextual Info: 1.2V Drive Nch+Nch MOSFET EM6K7 zStructure Silicon N-channel MOSFET zDimensions Unit : mm EMT6 zApplications Switching zFeatures 1) The MOSFET elements are independent, eliminating mutual interference. 2) Mounting cost and area can be cut in half. 3) Low voltage drive (1.2V) makes this device ideal for

Contextual Info: 1.2V Drive Nch + Nch MOSFET EM6K33 Structure ilicon N-channel MOSFET Dimensions Unit : mm  Features 1) High speed switing. 2) Small package(EMT6). 3) Ultra low voltage drive(1.2V drive). Application Switching Abbreviated symbol : K33 

vmt3

Abstract: EMT6 EMT3 T106 T148 1t2r
Contextual Info: Unit:mm Package Taping Spec Physical dimensions Type Taping dimensions Reel dimensions Basic ordering unit Plastic reel 1.2 0.8 0.2 (3) 0.8 (2) 0.4 0.4 1.2 0.32 0.2 T2L 8000 pcs/reel 0.13 0.5 0.22 (1) VMT3 B Label Plastic reel A A C B C VMT3 EMT6 1.6 1.6

Contextual Info: EMD5 / UMD5N Transistors General purpose dual digital transistors EMD5 / UMD5N zExternal dimensions (Unit : mm) (3) 0.22 (4) (5) (6) (2) 1.2 1.6 0.5 0.5 1.0 1.6 EMD5 (1) 0.5 0.13 zFeatures 1) Both the DTA143X chip and DTC144E chip in an EMT6 or UMT6 package.

EM6K33

Contextual Info: 1.2V Drive Nch + Nch MOSFET EM6K33 Dimensions Unit : mm  Structure ilicon N-channel MOSFET Features 1) High speed switing. 2) Small package(EMT6). 3) Ultra low voltage drive(1.2V drive). Application Switching Abbreviated symbol : K33 

Contextual Info: EMZ8 / UMZ8N Transistors Power management dual transistors EMZ8 / UMZ8N zFeature 1) Both a 2SA2018 chip and 2SC2412K chip in a EMT or UMT package. zDimensions(Unit : mm) EMZ8 (6) (5) (4) zEquivalent circuits (1) (2) (3) ROHM : EMT6 EIAJ : (3) (2) Each lead has same dimensions

Contextual Info: EMZ8 / UMZ8N Transistors Power management dual transistors EMZ8 / UMZ8N !External dimensions (Units : mm) (5) (6) (5) 0.5 1.25 (6) 2.0 1.3 (3) (1) (6) (4) 0.65 UMZ8N (2) Tr1 0.65 (1) 0.2 Tr2 Each lead has same dimensions ROHM : EMT6 EIAJ : (4) (2) (1) (5)

2SA2018

Abstract: DTC144EE EMF5
Contextual Info: EMF5 Transistors Power management dual transistors EMF5 2SA2018 and DTC144EE are housed independently in a EMT6 package. !Structure Silicon epitaxial planar transistor !Equivalent circuits (3) (2) DTr2 ROHM : EMT6 (5) (2) 0.5 0.5 1.0 1.6 (3) (4) (1) 1.2

Contextual Info: EM6K1 Transistor 2.5V Drive Nch+Nch MOS FET EM6K1 zExternal dimensions Unit : mm zStructure Silicon N-channel MOS FET EMT6 1.6 0.5 1.0 0.5 0.5 zFeatures 1) Two 2SK3019 transistors in a single EMT package. 2) The MOS FET elements are independent, eliminating

2SA2018

Abstract: DTC123EE
Contextual Info: EMF4 Transistors Power management dual transistors EMF4 2SA2018 and DTC123EE are housed independently in a EMT6 package. !Structure Silicon epitaxial planar transistor (2) DTr2 (2) 0.5 0.5 1.0 1.6 (5) (1) 0.5 1.2 1.6 Each lead has same dimensions Abbreviated symbol：F4

EMT6

Abstract: diode marking U22
Contextual Info: TYPE PRODUCTS EMT6 PAGE EM6K7 1.TYPE EM6K7 2.STRUCTURE SILICON N-CHANNEL MOS FET 3.APPLICATIONS SWITCHING 1/4 4.ABSOLUTE MAXIMUM RATINGS [Ta=25oC] 《 IT IS THE SAME RATINGS FOR THE Tr1 AND Tr2. 》 DRAIN-SOURCE VOLTAGE VDSS ・・・ 20V GATE-SOURCE VOLTAGE

DTC144E

Abstract: EMD28
Contextual Info: EMD28 Transistors General purpose transistor isolated transistors EMD28 DTB543X and DTC144E A are housed independently in a EMT6 package. zApplications DC / DC converter Motor driver zExternal dimensions (Unit : mm) EMT6 zFeatures 1) DTr1 : PNP digital transistor

DTC114E

Abstract: EMD30
Contextual Info: EMD30 Transistors General purpose transistor isolated transistors EMD30 DTB713Z and DTC114E A are housed independently in a EMT6 package. zExternal dimensions (Unit : mm) zApplications DC / DC converter Motor driver EMT6 1.6 0.5 1.0 0.5 0.5 (6) (5) (4) 1.6

2SD2696

Abstract: EMX28
Contextual Info: Low frequency transistor Complex 2-elements Bipolar Transistor EMX28 zDimensions (Unit : mm) zStructure NPN Silicon Epitaxial Planar Transistor EMT6 1.6 0.5 1.0 0.5 0.5 zFeatures 1) Two 2SD2696 dies are incorpolated in the EMT6 package. Collector saturation voltage is low.

Contextual Info: 1.2V Drive Nch+Pch MOSFET EM6M2 Structure Silicon N-channel MOSFET / Silicon P-channel MOSFET Dimensions Unit : mm EMT6 Features 1) Nch MOSFET and Pch MOSFET are put in EMT6 package. 2) High-speed switching. 3) Low voltage drive (1.2V drive). 4) Built-in G-S Protection Diode.

SMT6 T108

Contextual Info: EMH1 / UMH1N / IMH1A Datasheet NPN 100mA 50V Complex Digital Transistors Bias Resistor Built-in Transistors lOutline Parameter VCC IC(MAX.) R1 R2 Tr1 and Tr2 EMT6 UMT6 (6) (6) 50V 100mA 22kW 22kW (5) (5) (4) (4) (1) (1) (2) (2) (3) (3) EMH1 (SC-107C) UMH1N

EMH15

Abstract: marking h15
Contextual Info: EMH15 / IMH15A Datasheet NPN 100mA 50V Complex Digital Transistors Bias Resistor Built-in Transistors lOutline Parameter VCEO IC(MAX.) R1 Tr1 and Tr2 EMT6 SMT6 (4) (6) 50V 100mA 47kW (5) (5) (6) (4) (1) (3) (2) (2) (3) (1) EMH15 (SC-107C) lFeatures IMH15A

MARKING H11

Contextual Info: EMH11 / UMH11N / IMH11A Datasheet NPN 100mA 50V Complex Digital Transistors Bias Resistor Built-in Transistors lOutline Parameter VCC IC(MAX.) R1 R2 Tr1 and Tr2 EMT6 UMT6 (6) (6) 50V 100mA 10kW 10kW (5) (5) (4) (4) (1) (1) (2) (2) (3) (3) EMH11 (SC-107C)