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    TRANSISTOR MARK NB Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    2SC6026MFV
    Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=50 V / IC=0.15 A / hFE=120~400 / VCE(sat)=0.25 V / SOT-723 Datasheet
    TTC5886A
    Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=50 V / IC=5 A / hFE=400~1000 / VCE(sat)=0.22 V / tf=120 ns / New PW-Mold Datasheet
    TTA2097
    Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / VCEO=-50 V / IC=-5 A / hFE=200~500 / VCE(sat)=-0.27 V / tf=60 ns / New PW-Mold Datasheet
    TTA011
    Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / VCEO=-50 V / IC=-5 A / hFE=200~500 / VCE(sat)=-0.27 V / tf=60 ns / PW-Mini Datasheet
    TPCP8513
    Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=80 V / IC=4 A / hFE=100~200 / VCE(sat)=0.17 V / tf=70 ns / PS-8 Datasheet

    TRANSISTOR MARK NB Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    alternator diode 1776 B

    Abstract: 2az marking transistor sot-23 SMD SOT23 transistor MARK Y2 ic mb4213 NEC 12F triac F10P048 ktc3114 equivalent SMD TRANSISTOR MARKING 02N DIODE PJ 57 ss14 BC517 equivalent
    Contextual Info: Transistors Transistors Diodes Diodes Thyristors Thyristors SAW SAW Device Device Dielectric Dielectric Device Device Integrated Integrated Circuit Circuit Table of Contents Index 5 SMD Transistors Line-up PNP Transistors Transistors Line-up (NPN Transistors)


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    hig86-755-3679515alternator diode 1776 b2az marking transistor sot-23smd sot23 transistor mark y2+7ic mb4213nec 12f triacf10p048ktc3114 equivalentsmd transistor marking 02ndiode pj 57 ss14bc517 equivalent PDF

    MB4213

    Abstract: F10P048 mn1280 mb4213 equivalent smd transistor zaa diode zener ZD 15 ic mb4213 transistor 2AX SMD 252 B34 SMD ZENER DIODE bc237 equivalent SMD
    Contextual Info: Table of Contents Index 5 SMD Transistors Transistors Line-up PNP Transistors Transistors Line-up (NPN Transistors) Small Signal General Purpose Transistors Small Signal Low Noise Transistors Small Signal Audio Muting Transistors Small Signal Darlington Transistors


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    ssip-12kia6283kkia7217apssip-10+13kia6240kkia6801kkia6901p/fmb4213f10p048mn1280mb4213 equivalentsmd transistor zaadiode zener zd 15ic mb4213transistor 2ax smd252 b34 smd zener diodebc237 equivalent smd PDF

    oz960

    Abstract: khb*9D5N20P MB4213 KIA78*pI MN1280 F10P048 KIA7812A MJE13007 mb4213 equivalent TRANSISTOR SMD N2 3j
    Contextual Info: Table of Contents Index 4 SMD ✞✟ Bipolar Junction Transistors Transistor Line-up PNP Transistor Transistor Line-up (NPN Transistor) Small Signal General Purpose Transistors Small Signal Low Noise Transistors Small Signal Audio Muting Transistors Small Signal High hFE Transistors


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    kia7900pitc7sh04fukic7sh04fusc604+16kac3301qnm51943kia7042ap/aftc7sh08fukic7sh08fult1937oz960khb*9d5n20pmb4213kia78*pimn1280f10p048kia7812amje13007mb4213 equivalenttransistor smd n2 3j PDF

    KF6N60

    Abstract: 2SK3850 equivalent KF9N25 KF7N50 MDF10N65b transistor PANASONIC ZENER Kf10n60 KIA278R12PI equivalent kid65003ap equivalent kia578r05
    Contextual Info: Factory : #149, Gongdan-1-dong Gumi, Gyeongsangbuk-do, KOREA 上 http://www.kec.co.kr http://www.keccorp.com Head office : #275-5, Yangjae-dong, Seocho-gu Seoul, KOREA 海 ww 众 w. 韩 ck 授 b- 权 sh 代 .c 理 om 2014 Semiconductor Product Guide KEC CORPORATION


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    usfb053usfb13usfb13ausfb13l+16usfb14usfz10vusfz11vusfz12vusfz13vusfz15vkf6n602sk3850 equivalentkf9n25kf7n50mdf10n65b transistorpanasonic zenerkf10n60kia278r12pi equivalentkid65003ap equivalentkia578r05 PDF

    MN1280

    Abstract: KGT50N60kda bc547 smd transistor kia1117af transistor smd zG y6 smd transistor MB4213 y4 smd transistor smd transistor zaa KGT25N120NDA
    Contextual Info: Table of Contents SMD THD ▣ Table of Contents 2 ▣ Bipolar Junction Transistor 4 Transistor Line-up PNP Transistor Transistor Line-up (NPN Transistor) Small Signal General Purpose Transistor Current Regulating Device Small Signal Low Noise Transistor


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    mn1280kgt50n60kdabc547 smd transistorkia1117af+6transistor smd zgy6 smd transistormb4213y4 smd transistorsmd transistor zaakgt25n120nda PDF

    TRANSISTOR MARK NB

    Abstract: KRC641T KRC642T KRC643T KRC644T KRC645T KRC646T transistor mark NF
    Contextual Info: SEMICONDUCTOR KRC641T~KRC646T TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR HIGH CURRENT SWITCHING APPLICATION. INTERFACE CIRCUIT AND DRIVER CIRCUIT APPPLICATION. E B FEATURES 1 ᴌWith Built-in Bias Resistors. B G ᴌSimplify Circuit Design. 4 3 I C EQUIVALENT CIRCUIT


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    krc641tkrc646tkrc645tkrc642t+4krc643ttransistor mark nbkrc644ttransistor mark nf PDF

    KRC404E

    Abstract: KRC403E TRANSISTOR MARK NB 406E KRC401E KRC402E KRC405E KRC406E transistor mark NF
    Contextual Info: SEMICONDUCTOR KRC401E~KRC406E TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR SWITCHING APPLICATION. INTERFACE CIRCUIT AND DRIVER CIRCUIT APPLICATION. FEATURES With Built-in Bias Resistors. Simplify Circuit Design. Reduce a Quantity of Parts and Manufacturing Process.


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    krc401ekrc406ekrc402ekrc403e+5krc404ekrc405etransistor mark nb406etransistor mark nf PDF

    transistor MARKING NC KRC

    Abstract: TRANSISTOR MARK NB
    Contextual Info: SEMICONDUCTOR KRC651E~KRC656E TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR SWITCHING APPLICATION. INTERFACE CIRCUIT AND DRIVER CIRCUIT APPLICATION. FEATURES • With Built-in Bias Resistors. • Simplify Circuit Design. • Reduce a Quantity of Parts and Manufacturing Process.


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    krc651ekrc656ekrc652ekrc653e+5krc654ekrc655ekrc651e-krc656etransistor marking nc krctransistor mark nb PDF

    AND8020

    Abstract: NBSG11 NBSG11BA NBSG11BAR2
    Contextual Info: NBSG11 Product Preview 2.5V/3.3VĄSiGe 1:2 Differential Clock Driver with RSECL* Outputs http://onsemi.com *Reduced Swing ECL The SG11 is a Silicon Germanium 1–to–2 differential fanout buffer, optimized for low skew and ultra–low JITTER. Inputs incorporate internal 50 W termination resistors and accept


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    nbsg11r14525nbsg11/dand8020+2nbsg11banbsg11bar2 PDF

    fcBGA PACKAGE thermal resistance

    Abstract: AND8020 NBSG14 NBSG14BA NBSG14BAR2 SG14 SG14 marking FCBGA
    Contextual Info: NBSG14 Product Preview 2.5V/3.3VĄSiGe 1:4 Differential Clock Driver with RSECL* Outputs http://onsemi.com *Reduced Swing ECL The SG14 is a Silicon Germanium 1–to–4 clock distribution chip, optimized for low skew and ultra–low JITTER. Inputs incorporate internal 50 W termination resistors and accept


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    nbsg14r14525nbsg14/dfcbga package thermal resistance+6and8020nbsg14banbsg14bar2sg14sg14 markingfcbga PDF

    KRC401

    Abstract: KRC402 KRC403 KRC404 KRC405 KRC406
    Contextual Info: KEC KRC401KRC406 SEMICONDUCTOR TECHNICAL DATA KOREA ELECTRONICS CO.,LTD. EPITAXIAL PLANAR NPN TRANSISTOR SWITCHING APPLICATION. INTERFACE CIRCUIT AND DRIVER CIRCUIT APPLICATION. FEATURES • • • • With Built-in Bias Resistors. Simplify Circuit Design.


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    krc401krc406krc402krc403+2krc404krc405 PDF

    a406 transistor

    Contextual Info: KRC401 — SEMICONDUCTOR KRC406 EPITAXIAL PLANAR NPN TRANSISTOR TECHNICAL DATA SWITCHING APPLICATION. INTERFACE CIRCUIT AND DRIVER CIRCUIT APPLICATION. FEATURES • • • • With Built-in Bias Resistors. Simplify Circuit Design. Reduce a Quantity of Parts and Manufacturing Process.


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    krc401krc406transistorkrc402krc403+4krc404krc405krc406a406 transistor PDF

    KRC102S

    Abstract: 106S KRC105S TRANSISTOR MARK NB KRC101S KRC103S KRC104S KRC106S ph-13 transistor KRC104S NPN transistor
    Contextual Info: KRC101SKRC106S SEMICONDUCTOR TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR SWITCHING APPLICATION. INTERFACE CIRCUIT AND DRIVER CIRCUIT APPLICATION. FEATURES • With Built-in Bias Resistors. • Simplify Circuit Design. • Reduce a Quantity of Parts and Manufacturing Process.


    OCR Scan
    krc101s-krc106skrc101skrc102s+8krc103skrc104skrc105sot-23106stransistor mark nbph-13 transistorkrc104s npn transistor PDF

    Contextual Info: NBSG16 Product Preview 2.5V / 3.3VĄSiGe Differential Receiver/Driver with RSECL* Outputs http://onsemi.com *Reduced Swing ECL The SG16 is a Silicon Germanium differential receiver/driver. The device is functionally equivalent to the EP16 and LVEP16 devices


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    nbsg16lvep16nbsgl16nbsgm16+3nbsgc16r14525nbsg16/d PDF

    NBSG16BAR2

    Abstract: NBSG16 NBSG16BA SG16
    Contextual Info: NBSG16 Product Preview 2.5 V / 3.3 VĄSiGe Differential Receiver/Driver with RSECL* Outputs http://onsemi.com *Reduced Swing ECL The SG16 is a Silicon Germanium differential receiver/driver. The device is functionally equivalent to the EP16 and LVEP16 devices


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    nbsg16lvep16r14525nbsg16/d+3nbsg16bar2nbsg16basg16 PDF

    Contextual Info: NBSG16 Product Preview 2.5V / 3.3VĄSiGe Differential Receiver/Driver with RSECL* Outputs http://onsemi.com *Reduced Swing ECL The SG16 is a Silicon Germanium differential receiver/driver. The device is functionally equivalent to the EP16 and LVEP16 devices


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    nbsg16lvep16r14525nbsg16/d PDF

    NBB-303T1

    Abstract: RF Nitro Communications 84-1LMI NBB-303 NBB-303T3
    Contextual Info: Cascadable Broadband GaAs MMIC Amplifier NBB-303 DC-8 GHz 6000037 Rev. A 1 Features Applications • • • Reliable Low-Cost HBT Design 12 dB Gain, +13.0 dBm P1dB @ 2 GHz High P1dB of +13.5 dBm at 6.0 GHz Single Power Supply Operation 50 Ω Input/Output Matched for High-Frequency


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    nbb-30350-ohm84-1lmi10420-f+3nbb-303t1rf nitro communicationsnbb-303t3 PDF

    84-1LMI

    Abstract: NBB-502 NBB-502-E NBB-502T1 NBB-502T3 Ablebond 190
    Contextual Info: Cascadable Broadband GaAs MMIC Amplifier NBB-502 DC-4 GHz 6000044 Rev. A Features 1 • • • • Reliable Low-Cost HBT Design 19.0 dB Gain, +12.3 dBm P1dB @ 2 GHz High P1dB of +13.5 dBm at 6.0 GHz Single Power Supply Operation 50 Ω Input/Output Matched for High Frequency


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    nbb-50250-ohm84-1lmi10420-f+4nbb-502-enbb-502t1nbb-502t3ablebond 190 PDF

    84-1LMI

    Abstract: NBB-401 NBB-401T1 NBB-401T3 transistor gt 322
    Contextual Info: Cascadable Broadband GaAs MMIC Amplifier NBB-403 DC-6 GHz 6000041 Rev. A Features 1 • • • • • Reliable Low-Cost HBT Design 15.5 dB Gain, +14.4 dBm P1dB @ 2 GHz High P1dB of +13.0 dBm at 6.0 GHz Single Power Supply Operation 50 Ω Input/Output Matched for High Frequency


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    nbb-403nbb-40150-ohm84-1lmi+410420-fnbb-401t1nbb-401t3transistor gt 322 PDF

    lg washing machine control circuit

    Abstract: gp1uv701
    Contextual Info: SHARP IR0 5 4 0 1 SPEC No. y ^ =2 5/ h g p 1 u v 7 0 q s 0 0 f -> y - x tfc ttlf Infrared Detecting unit for Remote'"Çôntroi QPllÌV70QS00F Series Specifications $n7 y “ pp Lead —Free Type * -?• #15 nBn * ^ * 7° h 7 s/< 4 ^ f I I 2 g ff * S ii §15


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    v70qs00fgp1uv70qs00f10opcs400pcs/packing+2lg washing machine control circuitgp1uv701 PDF

    SG16VS

    Abstract: ASE BGA BGA-16
    Contextual Info: NBSG16VS Product Preview 2.5V / 3.3VĄSiGe Differential Receiver/Driver with Variable Output Swing The SG16VS is a Silicon Germanium differential receiver/driver. The device is functionally equivalent to the EP16VS device with much higher bandwidth and lower EMI capabilities.


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    nbsg16vssg16vsep16vsr14525+3nbsg16/dase bgabga-16 PDF

    Contextual Info: NBSG11 2.5V/3.3V SiGe 1:2 Differential Clock Driver with RSECL* Outputs *Reduced Swing ECL http://onsemi.com The SG11 is a Silicon Germanium 1-to-2 differential fanout buffer, optimized for low skew and ultra-low JITTER. Inputs incorporate internal 50 W termination resistors and accept


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    nbsg1140acturer14525nbsg11/d PDF

    b7q7

    Abstract: 0024E
    Contextual Info: NBSG111 Product Preview 2.5V/3.3VĄSiGe 1:10 Differential Clock Driver with RSECL* Outputs http://onsemi.com *Reduced Swing ECL The SG111 is a Silicon Germanium 1–to–10 differential clock driver. The device is functionally equivalent to the LVEP111 device


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    nbsg111sg111lvep111r14525+3nbsg111/db7q70024e PDF

    MA2810

    Abstract: NBB-302T1 NBB-302T3 84-1LMI DC-12 NBB-300-D NBB-302 NBB-302-D NBB-302-E RF Nitro Communications
    Contextual Info: Cascadable Broadband GaAs MMIC Amplifier NBB-302 DC-12 GHz 6000036 Rev. A Features • • • 1 • • Reliable Low-Cost HBT Design 12 dB Gain, +13.7 dBm P1dB @ 2 GHz High P1dB of +14 dBm at 6.0 GHz and +11.0 dBm at 14.0 GHz Single Power Supply Operation


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    nbb-302dc-1250-ohm84-1lmi+810420-fma2810nbb-302t1nbb-302t3nbb-300-dnbb-302-dnbb-302-erf nitro communications PDF