alternator diode 1776 B
Abstract: 2az marking transistor sot-23 SMD SOT23 transistor MARK Y2 ic mb4213 NEC 12F triac F10P048 ktc3114 equivalent SMD TRANSISTOR MARKING 02N DIODE PJ 57 ss14 BC517 equivalent
Contextual Info: Transistors Transistors Diodes Diodes Thyristors Thyristors SAW SAW Device Device Dielectric Dielectric Device Device Integrated Integrated Circuit Circuit Table of Contents Index 5 SMD Transistors Line-up PNP Transistors Transistors Line-up (NPN Transistors)
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hig86-755-3679515alternator diode 1776 b2az marking transistor sot-23smd sot23 transistor mark y2+7ic mb4213nec 12f triacf10p048ktc3114 equivalentsmd transistor marking 02ndiode pj 57 ss14bc517 equivalent
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MB4213
Abstract: F10P048 mn1280 mb4213 equivalent smd transistor zaa diode zener ZD 15 ic mb4213 transistor 2AX SMD 252 B34 SMD ZENER DIODE bc237 equivalent SMD
Contextual Info: Table of Contents Index 5 SMD Transistors Transistors Line-up PNP Transistors Transistors Line-up (NPN Transistors) Small Signal General Purpose Transistors Small Signal Low Noise Transistors Small Signal Audio Muting Transistors Small Signal Darlington Transistors
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ssip-12kia6283kkia7217apssip-10+13kia6240kkia6801kkia6901p/fmb4213f10p048mn1280mb4213 equivalentsmd transistor zaadiode zener zd 15ic mb4213transistor 2ax smd252 b34 smd zener diodebc237 equivalent smd
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oz960
Abstract: khb*9D5N20P MB4213 KIA78*pI MN1280 F10P048 KIA7812A MJE13007 mb4213 equivalent TRANSISTOR SMD N2 3j
Contextual Info: Table of Contents Index 4 SMD ✞✟ Bipolar Junction Transistors Transistor Line-up PNP Transistor Transistor Line-up (NPN Transistor) Small Signal General Purpose Transistors Small Signal Low Noise Transistors Small Signal Audio Muting Transistors Small Signal High hFE Transistors
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kia7900pitc7sh04fukic7sh04fusc604+16kac3301qnm51943kia7042ap/aftc7sh08fukic7sh08fult1937oz960khb*9d5n20pmb4213kia78*pimn1280f10p048kia7812amje13007mb4213 equivalenttransistor smd n2 3j
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KF6N60
Abstract: 2SK3850 equivalent KF9N25 KF7N50 MDF10N65b transistor PANASONIC ZENER Kf10n60 KIA278R12PI equivalent kid65003ap equivalent kia578r05
Contextual Info: Factory : #149, Gongdan-1-dong Gumi, Gyeongsangbuk-do, KOREA 上 http://www.kec.co.kr http://www.keccorp.com Head office : #275-5, Yangjae-dong, Seocho-gu Seoul, KOREA 海 ww 众 w. 韩 ck 授 b- 权 sh 代 .c 理 om 2014 Semiconductor Product Guide KEC CORPORATION
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usfb053usfb13usfb13ausfb13l+16usfb14usfz10vusfz11vusfz12vusfz13vusfz15vkf6n602sk3850 equivalentkf9n25kf7n50mdf10n65b transistorpanasonic zenerkf10n60kia278r12pi equivalentkid65003ap equivalentkia578r05
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MN1280
Abstract: KGT50N60kda bc547 smd transistor kia1117af transistor smd zG y6 smd transistor MB4213 y4 smd transistor smd transistor zaa KGT25N120NDA
Contextual Info: Table of Contents SMD THD ▣ Table of Contents 2 ▣ Bipolar Junction Transistor 4 Transistor Line-up PNP Transistor Transistor Line-up (NPN Transistor) Small Signal General Purpose Transistor Current Regulating Device Small Signal Low Noise Transistor
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mn1280kgt50n60kdabc547 smd transistorkia1117af+6transistor smd zgy6 smd transistormb4213y4 smd transistorsmd transistor zaakgt25n120nda
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TRANSISTOR MARK NB
Abstract: KRC641T KRC642T KRC643T KRC644T KRC645T KRC646T transistor mark NF
Contextual Info: SEMICONDUCTOR KRC641T~KRC646T TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR HIGH CURRENT SWITCHING APPLICATION. INTERFACE CIRCUIT AND DRIVER CIRCUIT APPPLICATION. E B FEATURES 1 ᴌWith Built-in Bias Resistors. B G ᴌSimplify Circuit Design. 4 3 I C EQUIVALENT CIRCUIT
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krc641tkrc646tkrc645tkrc642t+4krc643ttransistor mark nbkrc644ttransistor mark nf
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KRC404E
Abstract: KRC403E TRANSISTOR MARK NB 406E KRC401E KRC402E KRC405E KRC406E transistor mark NF
Contextual Info: SEMICONDUCTOR KRC401E~KRC406E TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR SWITCHING APPLICATION. INTERFACE CIRCUIT AND DRIVER CIRCUIT APPLICATION. FEATURES With Built-in Bias Resistors. Simplify Circuit Design. Reduce a Quantity of Parts and Manufacturing Process.
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krc401ekrc406ekrc402ekrc403e+5krc404ekrc405etransistor mark nb406etransistor mark nf
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transistor MARKING NC KRC
Abstract: TRANSISTOR MARK NB
Contextual Info: SEMICONDUCTOR KRC651E~KRC656E TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR SWITCHING APPLICATION. INTERFACE CIRCUIT AND DRIVER CIRCUIT APPLICATION. FEATURES • With Built-in Bias Resistors. • Simplify Circuit Design. • Reduce a Quantity of Parts and Manufacturing Process.
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krc651ekrc656ekrc652ekrc653e+5krc654ekrc655ekrc651e-krc656etransistor marking nc krctransistor mark nb
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AND8020
Abstract: NBSG11 NBSG11BA NBSG11BAR2
Contextual Info: NBSG11 Product Preview 2.5V/3.3VĄSiGe 1:2 Differential Clock Driver with RSECL* Outputs http://onsemi.com *Reduced Swing ECL The SG11 is a Silicon Germanium 1–to–2 differential fanout buffer, optimized for low skew and ultra–low JITTER. Inputs incorporate internal 50 W termination resistors and accept
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nbsg11r14525nbsg11/dand8020+2nbsg11banbsg11bar2
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fcBGA PACKAGE thermal resistance
Abstract: AND8020 NBSG14 NBSG14BA NBSG14BAR2 SG14 SG14 marking FCBGA
Contextual Info: NBSG14 Product Preview 2.5V/3.3VĄSiGe 1:4 Differential Clock Driver with RSECL* Outputs http://onsemi.com *Reduced Swing ECL The SG14 is a Silicon Germanium 1–to–4 clock distribution chip, optimized for low skew and ultra–low JITTER. Inputs incorporate internal 50 W termination resistors and accept
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nbsg14r14525nbsg14/dfcbga package thermal resistance+6and8020nbsg14banbsg14bar2sg14sg14 markingfcbga
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KRC401
Abstract: KRC402 KRC403 KRC404 KRC405 KRC406
Contextual Info: KEC KRC401KRC406 SEMICONDUCTOR TECHNICAL DATA KOREA ELECTRONICS CO.,LTD. EPITAXIAL PLANAR NPN TRANSISTOR SWITCHING APPLICATION. INTERFACE CIRCUIT AND DRIVER CIRCUIT APPLICATION. FEATURES • • • • With Built-in Bias Resistors. Simplify Circuit Design.
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krc401krc406krc402krc403+2krc404krc405
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a406 transistor
Contextual Info: KRC401 — SEMICONDUCTOR KRC406 EPITAXIAL PLANAR NPN TRANSISTOR TECHNICAL DATA SWITCHING APPLICATION. INTERFACE CIRCUIT AND DRIVER CIRCUIT APPLICATION. FEATURES • • • • With Built-in Bias Resistors. Simplify Circuit Design. Reduce a Quantity of Parts and Manufacturing Process.
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krc401krc406transistorkrc402krc403+4krc404krc405krc406a406 transistor
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KRC102S
Abstract: 106S KRC105S TRANSISTOR MARK NB KRC101S KRC103S KRC104S KRC106S ph-13 transistor KRC104S NPN transistor
Contextual Info: KRC101SKRC106S SEMICONDUCTOR TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR SWITCHING APPLICATION. INTERFACE CIRCUIT AND DRIVER CIRCUIT APPLICATION. FEATURES • With Built-in Bias Resistors. • Simplify Circuit Design. • Reduce a Quantity of Parts and Manufacturing Process.
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krc101s-krc106skrc101skrc102s+8krc103skrc104skrc105sot-23106stransistor mark nbph-13 transistorkrc104s npn transistor
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Contextual Info: NBSG16 Product Preview 2.5V / 3.3VĄSiGe Differential Receiver/Driver with RSECL* Outputs http://onsemi.com *Reduced Swing ECL The SG16 is a Silicon Germanium differential receiver/driver. The device is functionally equivalent to the EP16 and LVEP16 devices
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nbsg16lvep16nbsgl16nbsgm16+3nbsgc16r14525nbsg16/d
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NBSG16BAR2
Abstract: NBSG16 NBSG16BA SG16
Contextual Info: NBSG16 Product Preview 2.5 V / 3.3 VĄSiGe Differential Receiver/Driver with RSECL* Outputs http://onsemi.com *Reduced Swing ECL The SG16 is a Silicon Germanium differential receiver/driver. The device is functionally equivalent to the EP16 and LVEP16 devices
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nbsg16lvep16r14525nbsg16/d+3nbsg16bar2nbsg16basg16
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Contextual Info: NBSG16 Product Preview 2.5V / 3.3VĄSiGe Differential Receiver/Driver with RSECL* Outputs http://onsemi.com *Reduced Swing ECL The SG16 is a Silicon Germanium differential receiver/driver. The device is functionally equivalent to the EP16 and LVEP16 devices
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NBB-303T1
Abstract: RF Nitro Communications 84-1LMI NBB-303 NBB-303T3
Contextual Info: Cascadable Broadband GaAs MMIC Amplifier NBB-303 DC-8 GHz 6000037 Rev. A 1 Features Applications • • • Reliable Low-Cost HBT Design 12 dB Gain, +13.0 dBm P1dB @ 2 GHz High P1dB of +13.5 dBm at 6.0 GHz Single Power Supply Operation 50 Ω Input/Output Matched for High-Frequency
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nbb-30350-ohm84-1lmi10420-f+3nbb-303t1rf nitro communicationsnbb-303t3
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84-1LMI
Abstract: NBB-502 NBB-502-E NBB-502T1 NBB-502T3 Ablebond 190
Contextual Info: Cascadable Broadband GaAs MMIC Amplifier NBB-502 DC-4 GHz 6000044 Rev. A Features 1 • • • • Reliable Low-Cost HBT Design 19.0 dB Gain, +12.3 dBm P1dB @ 2 GHz High P1dB of +13.5 dBm at 6.0 GHz Single Power Supply Operation 50 Ω Input/Output Matched for High Frequency
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nbb-50250-ohm84-1lmi10420-f+4nbb-502-enbb-502t1nbb-502t3ablebond 190
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84-1LMI
Abstract: NBB-401 NBB-401T1 NBB-401T3 transistor gt 322
Contextual Info: Cascadable Broadband GaAs MMIC Amplifier NBB-403 DC-6 GHz 6000041 Rev. A Features 1 • • • • • Reliable Low-Cost HBT Design 15.5 dB Gain, +14.4 dBm P1dB @ 2 GHz High P1dB of +13.0 dBm at 6.0 GHz Single Power Supply Operation 50 Ω Input/Output Matched for High Frequency
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nbb-403nbb-40150-ohm84-1lmi+410420-fnbb-401t1nbb-401t3transistor gt 322
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lg washing machine control circuit
Abstract: gp1uv701
Contextual Info: SHARP IR0 5 4 0 1 SPEC No. y ^ =2 5/ h g p 1 u v 7 0 q s 0 0 f -> y - x tfc ttlf Infrared Detecting unit for Remote'"Çôntroi QPllÌV70QS00F Series Specifications $n7 y “ pp Lead —Free Type * -?• #15 nBn * ^ * 7° h 7 s/< 4 ^ f I I 2 g ff * S ii §15
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v70qs00fgp1uv70qs00f10opcs400pcs/packing+2lg washing machine control circuitgp1uv701
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SG16VS
Abstract: ASE BGA BGA-16
Contextual Info: NBSG16VS Product Preview 2.5V / 3.3VĄSiGe Differential Receiver/Driver with Variable Output Swing The SG16VS is a Silicon Germanium differential receiver/driver. The device is functionally equivalent to the EP16VS device with much higher bandwidth and lower EMI capabilities.
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Contextual Info: NBSG11 2.5V/3.3V SiGe 1:2 Differential Clock Driver with RSECL* Outputs *Reduced Swing ECL http://onsemi.com The SG11 is a Silicon Germanium 1-to-2 differential fanout buffer, optimized for low skew and ultra-low JITTER. Inputs incorporate internal 50 W termination resistors and accept
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b7q7
Abstract: 0024E
Contextual Info: NBSG111 Product Preview 2.5V/3.3VĄSiGe 1:10 Differential Clock Driver with RSECL* Outputs http://onsemi.com *Reduced Swing ECL The SG111 is a Silicon Germanium 1–to–10 differential clock driver. The device is functionally equivalent to the LVEP111 device
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MA2810
Abstract: NBB-302T1 NBB-302T3 84-1LMI DC-12 NBB-300-D NBB-302 NBB-302-D NBB-302-E RF Nitro Communications
Contextual Info: Cascadable Broadband GaAs MMIC Amplifier NBB-302 DC-12 GHz 6000036 Rev. A Features • • • 1 • • Reliable Low-Cost HBT Design 12 dB Gain, +13.7 dBm P1dB @ 2 GHz High P1dB of +14 dBm at 6.0 GHz and +11.0 dBm at 14.0 GHz Single Power Supply Operation
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nbb-302dc-1250-ohm84-1lmi+810420-fma2810nbb-302t1nbb-302t3nbb-300-dnbb-302-dnbb-302-erf nitro communications
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