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    TRANSISTOR MARK CODE HF Search Results

    TRANSISTOR MARK CODE HF Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    2SC6026MFV
    		Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=50 V / IC=0.15 A / hFE=120~400 / VCE(sat)=0.25 V / SOT-723 Datasheet
    TTC5886A
    		Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=50 V / IC=5 A / hFE=400~1000 / VCE(sat)=0.22 V / tf=120 ns / New PW-Mold Datasheet
    TTA2097
    		Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / VCEO=-50 V / IC=-5 A / hFE=200~500 / VCE(sat)=-0.27 V / tf=60 ns / New PW-Mold Datasheet
    TTA012
    		Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / VCEO=-80 V / IC=-4 A / hFE=100~200 / VCE(sat)=-0.22 V / tf=35 ns / PW-Mini Datasheet
    TPCP8514
    		Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=120 V / IC=3 A / hFE=120~240 / VCE(sat)=0.15 V / tf=170 ns / PS-8 Datasheet

    TRANSISTOR MARK CODE HF Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    HA8050S

    Abstract: HA8550S
    Contextual Info: HI-SINCERITY MICROELECTRONICS CORP. Spec. No. : HE6109 Issued Date : 1997.09.05 Revised Date : 2001.04.27 Page No. : 1/4 HA8550S PNP EPITAXIAL PLANAR TRANSISTOR Description The HA8550S is designed for general purpose amplifier applications. Features • High DC Current Gain hFE=100~500 at IC=150mA


    Original     		HE6109 HA8550S HA8550S 150mA) HA8050S HA8050S PDF

    SG3081

    Abstract: sg3081j uA701 TRANSISTOR SMD MARKING CODE 97 transistor smd marking 431 SMD Transistor 431 ac qml-38535 GDIP1-T16 MIL-PRF38535 6 pin TRANSISTOR SMD CODE PA
    Contextual Info: REVISIONS LTR DESCRIPTION A DATE YR-MO-DA APPROVED 02-06-25 R. MONNIN Make correction to the HFE test as specified under table I. - ro THE ORIGINAL FIRST SHEET OF THIS DRAWING HAS BEEN REPLACED. REV SHEET REV SHEET REV STATUS REV A A A A A A A A OF SHEETS


    Original     		SG3081J/883B SG3081 sg3081j uA701 TRANSISTOR SMD MARKING CODE 97 transistor smd marking 431 SMD Transistor 431 ac qml-38535 GDIP1-T16 MIL-PRF38535 6 pin TRANSISTOR SMD CODE PA PDF

    TRIAC BCR 16 km

    Abstract: PJ 1199 diode TRIAC BCR 12 km catalog transistor TO-220-AR RENESAS marking code package triac sot 89 TRIAC BCR 10 AM pj 999 diode TO-92-AB 110N04
    Contextual Info: Part Numbers Part Numbers 1 to 2 Part No. Destination Thyristor and triac Part No. designation CR 8 K M -12 A BCR 8 C M -12 L A Power Transistor Product No. Designation Renesas Uniform Product Number Current ratings (Ex.) Version Commutation characteristics (Triac only)


    Original     		R07CS0003EJ0200 TRIAC BCR 16 km PJ 1199 diode TRIAC BCR 12 km catalog transistor TO-220-AR RENESAS marking code package triac sot 89 TRIAC BCR 10 AM pj 999 diode TO-92-AB 110N04 PDF

    SM4 buzzer

    Abstract: transistor 1 E 9 k Transistor code iz ST108 buzzer smt
    Contextual Info: Composite Transistor Transistor Unit •P iezo electric Buzzer Driver R e s is ta n c e P a rt N o. RU101 Ri v a lu e r 2 k O (k n ) 10 180 VcES lc Pd (V ) (m A ) (m W ) 35 50 200 hpE M in . Typ. 150 330 M ax. 820 V CE lc (V ) (m A ) 3 50 •P ro d u c t Designation


    OCR Scan     		RU101 RU901 SM4 buzzer transistor 1 E 9 k Transistor code iz ST108 buzzer smt PDF

    BC850

    Abstract: BC849 BC846 BC848 "MARKING CODE P" BC846 SOT-23 bc847 BC856 BC860 mark 720
    Contextual Info: UTC BC846/BC847/BC848/BC849/BC850 NPN EPITAXIAL SILICON TRANSISTOR SWITCHING AND AMPLIFIER APPLICATION FEATURES *Suitable for automatic insertion in thick and thin-film circuits. *Complement to BC856 … BC860 2 1 3 SOT-23 1: EMITTER 2: BASE 3: COLLECTOR ABSOLUTE MAXIMUM RATINGS Ta=25°C, unless otherwise noted


    Original     		BC846/BC847/BC848/BC849/BC850 BC856 BC860 OT-23 BC846 BC847 BC850 BC848 BC849 BC850 BC849 BC846 "MARKING CODE P" BC846 SOT-23 BC856 BC860 mark 720 PDF

    marking code P

    Abstract: BC849 bc848 BC850
    Contextual Info: UTC BC846/BC847/BC848/BC849/BC850 NPN EPITAXIAL SILICON TRANSISTOR SWITCHING AND AMPLIFIER APPLICATION FEATURES *Suitable for automatic insertion in thick and thin-film circuits. *Complement to BC856 … BC860 2 1 3 SOT-23 1: EMITTER 2: BASE 3: COLLECTOR ABSOLUTE MAXIMUM RATINGS Ta=25°C, unless otherwise noted


    Original     		BC846/BC847/BC848/BC849/BC850 BC856 BC860 OT-23 BC846 BC847 BC850 BC848 BC849 marking code P PDF

    BC850

    Abstract: bc849 marking code P
    Contextual Info: UTC BC846/BC847/BC848/BC849/BC850 NPN EPITAXIAL SILICON TRANSISTOR SWITCHING AND AMPLIFIER APPLICATION FEATURES *Suitable for automatic insertion in thick and thin-film circuits. *Complement to BC856 … BC860 2 1 3 SOT-323 1: EMITTER 2: BASE 3: COLLECTOR


    Original     		BC846/BC847/BC848/BC849/BC850 BC856 BC860 OT-323 BC846 BC847 BC850 BC848 BC849 marking code P PDF

    212 s sot-23

    Abstract: 62w sot-23 rf transistor mark code H1 212 t sot-23 J212 J211 TOP CBVK741B019 F63TNR J211 MMBFJ211
    Contextual Info: J211 / J212 / MMBFJ211 / MMBFJ212 MMBFJ211 MMBFJ212 J211 J212 G S G S TO-92 SOT-23 D Mark: 62W / 62X D NOTE: Source & Drain are interchangeable N-Channel RF Amplifier This device is designed for HF/VHF mixer/amplifier and applications where Process 50 is not adequate. Sufficient


    Original     		MMBFJ211 MMBFJ212 MMBFJ211 OT-23 212 s sot-23 62w sot-23 rf transistor mark code H1 212 t sot-23 J212 J211 TOP CBVK741B019 F63TNR J211 PDF

    transistor j210

    Abstract: 212 t sot-23
    Contextual Info: G S G S TO-92 SOT-23 D Mark: 62V / 62W / 62X D NOTE: Source & Drain are interchangeable N-Channel RF Amplifier This device is designed for HF/VHF mixer/amplifier and applications where Process 50 is not adequate. Sufficient gain and low noise for sensitive receivers. Sourced from


    Original     		MMBFJ210 MMBFJ211 MMBFJ212 OT-23 transistor j210 212 t sot-23 PDF

    L6 TRANSISTOR

    Abstract: transistor L6
    Contextual Info: EML6 / UML6N Transistors General purpose transistor isolated transistor and diode EML6 / UML6N 2SC5585 and RB521S-30 are housed independently in a EMT5 or UMT5 package. Dimensions (Unit : mm) Applications DC / DC converter Motor driver EMT5 1.6 0.5 1.0 0.5 0.5


    Original     		2SC5585 RB521S-30 200mA 200mA, 100MHz L6 TRANSISTOR transistor L6 PDF

    Contextual Info: EML4 / UML4N Transistors General purpose transistor isolated transistor and diode EML4 / UML4N 2SC5585 and RB521S-30 are housed independently in a EMT5 or UMT5 package. Dimensions (Unit : mm) Applications DC / DC converter Motor driver EMT5 1.6 0.5 1.0 0.5 0.5


    Original     		2SC5585 RB521S-30 200mA, 100MHz PDF

    marking code H.5 Sot 23-5

    Abstract: Volt regulator 723 10 Pin IC 723 voltage regulator 723 voltage regulator ic TC47BR ntc-47 TC-47 TL 4946 ntc47
    Contextual Info: t v . • i1',!ï î .1l II^I[I:î ¡ e i w O A ln i“ ' ¡1 à f;] m Semiconductor, Inc. TC47 Series VOLTAGE REGULATOR CONTROLLER FEATURES GENERAL DESCRIPTION ■ ■ The TC47 Series are CMOS voltage regulator controller ICs for use with an external power transistor. They feature


    OCR Scan     		TC4730A) 100mA: OT-23-5 100mA marking code H.5 Sot 23-5 Volt regulator 723 10 Pin IC 723 voltage regulator 723 voltage regulator ic TC47BR ntc-47 TC-47 TL 4946 ntc47 PDF

    D9D TRANSISTOR

    Abstract: SOT-23 marking D9D HMBT8050 transistor d9d npn D9D D9D SOT D9D sot23 d9d marking code HMBT8550 sot-23 d9d
    Contextual Info: HI-SINCERITY Spec. No. : HE6812 Issued Date : 1992.08.25 Revised Date : 2004.08.17 Page No. : 1/4 MICROELECTRONICS CORP. HMBT8050 NPN EPITAXIAL TRANSISTOR Description The HMBT8050 is designed for general purpose amplifier applications. SOT-23 Features • High DC Current hFE=150-400 at IC=150mA


    Original     		HE6812 HMBT8050 HMBT8050 OT-23 150mA HMBT8550 183oC 217oC 260oC D9D TRANSISTOR SOT-23 marking D9D transistor d9d npn D9D D9D SOT D9D sot23 d9d marking code HMBT8550 sot-23 d9d PDF

    B9D TRANSISTOR

    Abstract: PNP Transistor b9d SOT-23 marking B9D transistor B9C HMBT8050 HMBT8550 B9C MARK B9C transistor sot-23 Marking B9C
    Contextual Info: HI-SINCERITY Spec. No. : HE6813 Issued Date : 1997.08.11 Revised Date : 2004.08.17 Page No. : 1/4 MICROELECTRONICS CORP. HMBT8550 PNP EPITAXIAL TRANSISTOR Description The HMBT8550 is designed for general purpose amplifier applications. SOT-23 Features • High DC Current: hFE=150-400 at IC=150mA


    Original     		HE6813 HMBT8550 HMBT8550 OT-23 150mA HMBT8050 183oC 217oC 260oC B9D TRANSISTOR PNP Transistor b9d SOT-23 marking B9D transistor B9C HMBT8050 B9C MARK B9C transistor sot-23 Marking B9C PDF

    1902 transistor

    Abstract: H2N3417
    Contextual Info: HI-SINCERITY MICROELECTRONICS CORP. Spec. No. : HE6267-B Issued Date : 1992.11.25 Revised Date : 2000.09.01 Page No. : 1/3 H2N3417 NPN SILICON TRANSISTOR Description The H2N3417 is a silicon NPN planar epitaxial transistor designed for small signal general purpose and switching applications.


    Original     		HE6267-B H2N3417 H2N3417 1902 transistor PDF

    BT816

    Abstract: TA114E a768 transistor b722 B861 B718 equivalent transistor TT 3034 C785 transistor b714 transistor B728
    Contextual Info: DIGITAL TRANSISTOR APPLICATION: • EQUIVALENT CIRCUITS: Inverter, Driver & Interface Circuits FEATURES: •o OUT I N o -MA/V • Replaces up to three parts 1 transistor & 2 resis­ tors with one part • Available in a variety of surface mount or leaded


    OCR Scan     		mm/13" O-92S) BT816 TA114E a768 transistor b722 B861 B718 equivalent transistor TT 3034 C785 transistor b714 transistor B728 PDF

    y1 marking code transistor

    Abstract: HSB1386I transistor mark code H1
    Contextual Info: HI-SINCERITY Spec. No. : HI200201 Issued Date : 2002.02.01 Revised Date : 2005.07.13 Page No. : 1/4 MICROELECTRONICS CORP. HSB1386I LOW FREQUENCY TRANSISTOR -20V, -4A Features • Low VCE(sat). VCE(sat)=-0.55V(Typ.) (IC/IB=-4A/-0.1A) • Excellent DC current gain characteristics.


    Original     		HI200201 HSB1386I O-251 183oC 217oC 260oC y1 marking code transistor HSB1386I transistor mark code H1 PDF

    1902 transistor

    Abstract: H2N6426
    Contextual Info: HI-SINCERITY MICROELECTRONICS CORP. Spec. No. : HE6232-B Issued Date : 1998.01.09 Revised Date : 2000.09.15 Page No. : 1/3 H2N6426 NPN EPITAXIAL PLANAR TRANSISTOR Description Darlington Transistor Absolute Maximum Ratings • Maximum Temperatures Storage Temperature . -55 ~ +150 °C


    Original     		HE6232-B H2N6426 1902 transistor H2N6426 PDF

    H2N6427

    Contextual Info: HI-SINCERITY MICROELECTRONICS CORP. Spec. No. : HE6274-B Issued Date : 1994.11.18 Revised Date : 2000.09.15 Page No. : 1/3 H2N6427 NPN EPITAXIAL PLANAR TRANSISTOR Description Darlington Transistor Absolute Maximum Ratings • Maximum Temperatures Storage Temperature . -55 ~ +150 °C


    Original     		HE6274-B H2N6427 H2N6427 PDF

    1902 transistor

    Abstract: H2N5089
    Contextual Info: HI-SINCERITY MICROELECTRONICS CORP. Spec. No. : HE6273-B Issued Date : 1993.12.08 Revised Date : 2000.09.15 Page No. : 1/3 H2N5089 NPN EPITAXIAL PLANAR TRANSISTOR Description Amplifier Transistor. Absolute Maximum Ratings • Maximum Temperatures Storage Temperature . -55 ~ +150 °C


    Original     		HE6273-B H2N5089 1902 transistor H2N5089 PDF

    HMPSA05

    Contextual Info: HI-SINCERITY MICROELECTRONICS CORP. Spec. No. : HE6301-B Issued Date : 1992.09.09 Revised Date : 2000.10.01 Page No. : 1/4 HMPSA05 NPN SILICON TRANSISTOR Description Amplifier transistor Absolute Maximum Ratings • Maximum Temperatures Storage Temperature . -55 ~ +150 °C


    Original     		HE6301-B HMPSA05 HMPSA05 PDF

    HMPS6562

    Contextual Info: HI-SINCERITY MICROELECTRONICS CORP. Spec. No. : HE6322-B Issued Date : 1992.09.09 Revised Date : 2000.09.20 Page No. : 1/4 HMPS6562 PNP SILICON TRANSISTOR Description The HMPS6562 is designed for audio transistor. Absolute Maximum Ratings • Maximum Temperatures


    Original     		HE6322-B HMPS6562 HMPS6562 PDF

    1902 transistor

    Abstract: 100MHZ HMPSA42 HMPSA92
    Contextual Info: HI-SINCERITY Spec. No. : HE6333 Issued Date : 1992.11.18 Revised Date : 2001.05.01 Page No. : 1/3 MICROELECTRONICS CORP. HMPSA42 NPN EPITACIAL PLANAR TRANSISTOR Description The HMPSA42 is high voltage transistor. Features • High Collector-Emitter Breakdown Voltage


    Original     		HE6333 HMPSA42 HMPSA42 HMPSA92 1902 transistor 100MHZ HMPSA92 PDF

    HMPSA43

    Abstract: 100MHZ HMPSA93
    Contextual Info: HI-SINCERITY Spec. No. : HE6334-B Issued Date : 1992.11.18 Revised Date : 2000.10.01 Page No. : 1/3 MICROELECTRONICS CORP. HMPSA43 NPN SILICON TRANSISTOR Description The HMPSA43 is high voltage transistor. Features • High Collector-Emitter Breakdown Voltage


    Original     		HE6334-B HMPSA43 HMPSA43 HMPSA93 100MHZ HMPSA93 PDF