TRANSISTOR LT 1100 Search Results

MPS8099 equivalent

Contextual Info: SAMSUNG SEMICONDUCTOR INC MPS8099 lt<E D | - 7*^4142 000733*1 fl NPN EPITAXIAL SILICON TRANSISTOR T -2 9 -2 1 AMPLIFIER TRANSISTOR • Collector-Em ltter Voltage: V c eo = 8 0 V • C ollector Dissipation: Pc max =625mW ABSOLUTE MAXIMUM RATINGS (Ta =25°C)

Contextual Info: SS9018 NPN EPITAXIAL SILICON TRANSISTOR AM/FM IF AMPLIFIER, LOCAL OSCILLATOR OF FM/VHF TUNER TO-92 * High Current Gain Bandwidth Product lT=1,100 MHz Typ ABSOLUTE MAXIMUM RATINGS (T ,= 2 5 °C ) Characteristic Symbol Collector-Base Voltage Collector-Emitter Voltage

ZTX853

Contextual Info: NPN SILICON PLANAR MEDIUM POWER HIGH CURRENT TRANSISTOR ISSUE 2 -A U G U S T 94_ FEATURES * 100 V o lt VCE0 * 4 A m ps continuous current * Up to 10 Am ps peak current * Very lo w saturation voltage Ptot=1,2 W atts ABSOLUTE MAXIMUM RATINGS.

Contextual Info: MICRO ELECTRONICS MIE LT» 1,0*11700 D 0000=10=1 3 HMEHK MEL709D NPN PLANAR PHOTO-TRANSISTOR The MEL709D Is silicon phototransistor with external base connection and built in a standard T-l 3/4 5mm0 light rejective filter epoxy package. This device is suitable for use in a light

Contextual Info: STANLEY ELECTRIC CO LT] SSE ]> • 4fc,7ßlSfl GGDSG3G G73 M I I S T ^lÄMLEt X ^-6 3 PHOTODARLINGTON TRANSISTOR PD502 ■ Package Dimensions ■ FEATURES • • HIGH SENSITIVITY lc = 4 m A TYP.) []3.4m m DIA. AXIAL LEAD TYPE, ULTRA COMPACT Unit in mm o

Contextual Info: NPN SILICON PLANAR MEDIUM POWER HIGH CURRENT TRANSISTOR ISSUE 3 - NOVEM BER 1995 FEATURES * 100 V o lt VCE0 * 4 A m p s c o n tin u o u s c u rre n t * U p to 10 A m p s peak c u rre n t * V ery lo w s a tu ra tio n v o lta g e * Ptot=1.2 W a tts ABSOLUTE M AXIM UM RATINGS.

transistor LT 1100

Contextual Info: KSC5027F NPN SILICON TRANSISTOR HIGH V O L T A G E AND HIGH RELIABILITY HIGH SPEED SWITCHING WIDE SOA A B S O LU T E MAXIMUM RATINGS Characteristic Rating Unit Collector-Base Voltage Collector-Emitter Voltage VcBO Symbol 1100 V V CEO 800 Emitter-Base Voltage

Contextual Info: KSC5030 NPN SILICON TRANSISTOR HIGH VOLTAGE AND HIGH RELIABILTY HIGH SPEED SWITCHING WIDE SOA ABSOLUTE MAXIMUM RATINGS Characteristic Symbol Rating Unit Collector- Base Voltage VcBO 1100 V Collector- Emitter Voltage VcEO 800 V Emitter- Base Voltage V ebo 7

TRANSISTOR C 557 B

Contextual Info: NPN SILICON TRANSISTOR KSC5029 HIGH VOLTAGE AND HIGH RELIABILITY T 0-3P H IG H SP EED S W IT C H IN G W ID E SO A ABSOLUTE MAXIMUM RATINGS Ta= 25°C Characteristic Rating Unit VcBO 1100 VcEO 800 V V V A A A W "C °c Symbol Collector-Base Voltage Collector-Emitter Voltage

Contextual Info: KSC3552 NPN SILICON TRANSISTOR HIGH VOLTAGE AND HIGH RELIABILTY • High Speed Switching • W ide SO A ABSOLUTE MAXIMUM RATINGS C h a ra c te ris tic S ym bol R a tin g U n it C ollector Base Voltage VcBO 1100 V C ollector E m itter Voltage VcEO 800 V Em itter Base Voltage

Contextual Info: KSC5027F NPN SILICON TRANSISTOR HIGH VOLTAGE AND HIGH RELIABILITY | - HIGH SP EED SW ITCHING W IDE SO A T0-220F ABSOLUTE MAXIMUM RATINGS Sym bol Characteristic Rating Unit 1100 800 7 V lc lc 3 10 A A Ib 1.5 A W C ollector-Base Voltage VcBO Collector-Emitter Voltage

Contextual Info: KSC3552 NPN SILICON TRANSISTOR HIGH VOLTAGE AND HIGH RELIABILTY • High Speed Sw itching • W ide S O A ABSOLUTE MAXIMUM RATINGS R a tin g U n it C ollector Base Voltage C h a ra c te ris tic VcBO Sym bol 1100 V C ollector Em itter Voltage VcEO 800 V Em itter Base Voltage

Contextual Info: KSC2757 NPN EPITAXIAL SILICON TRANSISTOR MIXER OSCILLATOR FOR VHF TUNER S O T -2 3 HIGH <T fr =1100MHz Typ. ABSOLUTE MAXIMUM RATINGS (Ta=25°C) Characteristic Symbol Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current

Contextual Info: KSC5029 NPN SILICON TRANSISTOR HIGH VOLTAGE AND HIGH RELIABILTY H IGH S P E E D S W IT C H IN G W ID E SOA ABSOLUTE MAXIMUM RATINGS C haracteristic Sym bol Rating Unit Collector- Base Voltage VcBO 1100 Collector- Emitter Voltage VcEO 800 V Emitter- Base Voltage

QM600HA-24B

Abstract: QM600 transistor b 103 qm600H
Contextual Info: MITSUBISHI TRANSISTOR MODULES QM600HA-24BK HIGH POWER SWITCHING USE INSULATED TYPE QM600HA-24BK • lc Collector cu rren t. 600A : • V cex Collector-emitter vo ltag e .1200V DC current g a in .750

KSC5027

Contextual Info: KSC5027 NPN SILICON TRANSISTOR HIGH VOLTAGE AND HIGH RELIABILITY i- HIGH SPEED SWITCHING WIDE SOA i T0-220 ABSOLUTE MAXIMUM RATINGS Symbol Characteristic C ollector-Base Voltage V cbo Collector-Em itter Voltage VcEO Emitter-Base Voltage C ollector C urrent DC

Contextual Info: KSC2757 NPN EPITAXIAL SILICON TRANSISTOR MIXER OSCILLATOR FOR VHF TUNER S O T-23 HIGH fT fT=1100M H z TYP. ABSOLUTE MAXIMUM RATINGS (TA=25°C) C haracteristic Sym bol Rating Unit 30 15 5 V V V Col lector-Base Voltage C ollector-E m itter Voltage Em itter-Base Voltage

d408

Abstract: DD 128 D transistor GG13 LT 7212 MHz-860 RA45H7687M1 RA45H7687M1-101 DD 128 transistor
Contextual Info: MITSUBISHI RF MOSFET MODULE ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS RA45H7687M1 RoHS Compliance, 764-870MHz 45W 12.8V, 2 Stage Amp. For MOBILE RADIO DESCRIPTION The RA45H7687M1 is a 45-watt RF MOSFET Amplifier Module for 12.8-volt mobile radios that operate in the 764- to

IC 741 OPAMP

Abstract: SAA 1251 7106CPL TDA2620 SAA1121 LM 4440 AUDIO AMPLIFIER CIRCUIT touch dimmer TC 306H TDA 2310 TDA 2060 7107CPL
Contextual Info: Lineaire IC’s Lineaire IC’s dil to 99 dil 8 to 99 dil 18 to 78 to 99 dil 20 to 99 cer dip to 78 Wij leveren een groot aantal lineaire ic's uit voorraad. Kunt u een bepaald type niet vinden, aarzel dan niet ons telefonisch te raadplegen. Veelal kunnen wij u op korte

RA45H7687M1

Abstract: RA45H7687M1-101 45WATT DD 128 D transistor
Contextual Info: MITSUBISHI RF MOSFET MODULE ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS RA45H7687M1 RoHS Compliance, 764-870MHz 45W 12.8V, 2 Stage Amp. For MOBILE RADIO DESCRIPTION The RA45H7687M1 is a 45-watt RF MOSFET Amplifier Module for 12.8-volt mobile radios that operate in the 764- to

Contextual Info: KSC5030F NPN SILICON TRANSISTOR HIGH V O L T A G E AND HIGH RELIABILITY TO-3PF • HIGH S PEED SWITCHING • WIDE SOA A B S O LU T E MIXIMUM RATING Characteristic Symbol Rating Unit Collector Base Voltage VcBO Collector Emitter Voltage VcEO Emitter Base Voltage

varactor SSOP

Abstract: AN Motorola
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Low Pow er V oltage Controlled O scillator Buffer M C 12147 The MC12147 is intended for applications requiring high frequency signal generation up to 1300MHz. An external tank circuit is used to determine the desired frequency of operation. The VCO is realized using

construction of varactor diode

Contextual Info: MC12147 Low Power Voltage Controlled Oscillator Buffer The MC12147 is intended for applications requiring high frequency signal generation up to 1300 MHz. An external tank circuit is used to determine the desired frequency of operation. The VCO is realized using an

Mitsubishi transistor

Contextual Info: MITSUBISHI TRANSISTOR MODULES QM75E2Y/E3Y-2H HIGH POWER SWITCHING USE f INSULATED TYPE I ! QM75E2Y/E3Y-2H 1 t • Ic Collector cu rren t. 75A j • V cex • hFE Collector-em itter v o lta g e . 1000V s DC current g a in . 75 j