MEL709D Search Results

TRANSISTOR 2341

Abstract: xp950nm
Contextual Info: CRO MEL709D NPN SILICON PHOTO TRANSISTOR DESCRIPTION MEL709D is NPN silicon photo­ transistor with external base connection and built in a standard T -l 3/4 5mm light rejective epoxy package. This device is suitable for use in a light sersor of the industial

Contextual Info: MICRO ELECTRONICS MIE LT» 1,0*11700 D 0000=10=1 3 HMEHK MEL709D NPN PLANAR PHOTO-TRANSISTOR The MEL709D Is silicon phototransistor with external base connection and built in a standard T-l 3/4 5mm0 light rejective filter epoxy package. This device is suitable for use in a light

MEL709D

Contextual Info: MEL709D NPN SILICON PHOTO TRANSISTOR DESCRIPTION 04.98 0.196 MEL709D is NPN silicon photo­ transistor with external base connection and built in a standard T -l 3/4 (5mm) light rejective epoxy package. Ali dimension in mm(inch) No Scale ToL : +/-0.3mm r0.7(0.03)

MEL709D

Abstract: TB 006 sec 73 s
Contextual Info: CKO MÜL'/ÜVLf NPN SILICON PHOTO TRANSISTOR DESCRIPTION *4.98 0.196 MEL709D is NPN silicon photo­ transistor with external base connection and built in a standard T -l 3/4 (5mm) light rejective epoxy package. 87 (0.34) A ll dim ension in m m (inch) No Scale

L303A

Abstract: DL78 L 31A MA1515 EL79D
Contextual Info: Pin Photo Diodes TYPE NO. >_p nm SENSITIVITY Id H (nA/lx) MAX TYP (mW/cm) (nA) ^on toff VR (V) TYP (ns) TYP (ns) ML303 940 50 5 30 10 50 50 ML303B 880 50 5 30 10 50 50 ML308 940 45 1 30 10 50 50 ML308A 880 45 1 30 10 50 50 PACKAGE CASE NO. Side On Type L-303a