TRANSISTOR K13A50D Search Results

TRANSISTOR K13A50D Result Highlights (5)

Part	ECAD Model	Manufacturer	Description	Download	Buy
BLA1011-300		Rochester Electronics LLC	BLA1011-300 - 300W LDMOS Avionics Power Transistor	PDF
54F151LM/B		Rochester Electronics LLC	54F151 - Multiplexer, 1-Func, 8 Line Input, TTL	PDF
ICL7667MJA		Rochester Electronics LLC	ICL7667 - Buffer/Inverter Based MOSFET Driver, CMOS, CDIP8	PDF
93L422ADM/B		Rochester Electronics LLC	93L422A - 256 x 4 TTL SRAM	PDF
27S185DM/B		Rochester Electronics LLC	27S185 - OTP ROM, 2KX4, 55ns, TTL, CDIP18	PDF

TRANSISTOR K13A50D Datasheets Context Search

Catalog Datasheet	Type	Document Tags	PDF
k13a50da Contextual Info: TK13A50DA TOSHIBA Field Effect Transistor Silicon N Channel MOS Type -MOS TK13A50DA Switching Regulator Applications • • • • Unit: mm Low drain-source ON-resistance: RDS (ON) = 0.39 (typ.) High forward transfer admittance: ⎪Yfs⎪ = 6.0 S (typ.)	Original	TK13A50DA k13a50da	PDF
k13a50da Abstract: k13a50 TK13A50DA K13A50D Contextual Info: TK13A50DA TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π-MOSⅦ TK13A50DA Switching Regulator Applications • • • • Unit: mm Low drain-source ON-resistance: RDS (ON) = 0.39 Ω (typ.) High forward transfer admittance: ⎪Yfs⎪ = 6.0 S (typ.)	Original	TK13A50DA k13a50da k13a50 TK13A50DA K13A50D	PDF
k13a50da Abstract: K13A50D Contextual Info: TK13A50DA TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π-MOSⅦ TK13A50DA Switching Regulator Applications • • • • Unit: mm Low drain-source ON-resistance: RDS (ON) = 0.39 Ω (typ.) High forward transfer admittance: ⎪Yfs⎪ = 6.0 S (typ.)	Original	TK13A50DA k13a50da K13A50D	PDF
Contextual Info: TK13A50DA TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π-MOSⅦ TK13A50DA Switching Regulator Applications • • • • Unit: mm Low drain-source ON-resistance: RDS (ON) = 0.39 Ω (typ.) High forward transfer admittance: ⎪Yfs⎪ = 6.0 S (typ.)	Original	TK13A50DA	PDF
k13a50 Abstract: K13A50DA K13A50D K13A TK13A50DA Contextual Info: TK13A50DA TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π-MOSⅦ TK13A50DA Switching Regulator Applications • • • • Unit: mm Low drain-source ON-resistance: RDS (ON) = 0.39 Ω (typ.) High forward transfer admittance: ⎪Yfs⎪ = 6.0 S (typ.)	Original	TK13A50DA k13a50 K13A50DA K13A50D K13A TK13A50DA	PDF
Contextual Info: TK13A50D TOSHIBA Field Effect Transistor Silicon N Channel MOS Type -MOS TK13A50D Switching Regulator Applications Unit: mm Low drain-source ON resistance: RDS (ON) = 0.31 Ω (typ.) High forward transfer admittance: ⎪Yfs⎪ = 7.5 S (typ.) Low leakage current: IDSS = 10 A (max) (VDS = 500 V)	Original	TK13A50D	PDF
K13A50D transistor Abstract: K13A50D TK13A50D transistor K13a50d k13a50 K*A50D toshiba K13A50D Contextual Info: TK13A50D TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π-MOSⅦ TK13A50D Switching Regulator Applications Unit: mm Low drain-source ON resistance: RDS (ON) = 0.31 Ω (typ.) High forward transfer admittance: ⎪Yfs⎪ = 7.5 S (typ.) Low leakage current: IDSS = 10 A (max) (VDS = 500 V)	Original	TK13A50D K13A50D transistor K13A50D TK13A50D transistor K13a50d k13a50 K*A50D toshiba K13A50D	PDF
K13A50D transistor Abstract: k13a50 K13A50D TK13A50D K*A50D Contextual Info: TK13A50D TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π-MOSⅦ TK13A50D Switching Regulator Applications Unit: mm Low drain-source ON resistance: RDS (ON) = 0.31 Ω (typ.) High forward transfer admittance: ⎪Yfs⎪ = 7.5 S (typ.) Low leakage current: IDSS = 10 A (max) (VDS = 500 V)	Original	TK13A50D K13A50D transistor k13a50 K13A50D TK13A50D K*A50D	PDF
K13A50D 2.0 transistor Abstract: K13A50D transistor K13A50D Contextual Info: TK13A50D TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π-MOSⅦ TK13A50D Switching Regulator Applications Unit: mm Low drain-source ON resistance: RDS (ON) = 0.31 Ω (typ.) High forward transfer admittance: ⎪Yfs⎪ = 7.5 S (typ.) Low leakage current: IDSS = 10 A (max) (VDS = 500 V)	Original	TK13A50D K13A50D 2.0 transistor K13A50D transistor K13A50D	PDF