TRANSISTOR K 14 Search Results

PDTA143XEF

Abstract: SC18 SC-89
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET M3D425 PDTA143XEF PNP resistor-equipped transistor; R1 = 4.7 kΩ, R2 = 10 kΩ Product specification 2002 Mar 14 Philips Semiconductors Product specification PNP resistor-equipped transistor; R1 = 4.7 kΩ, R2 = 10 kΩ

PEMB10

Abstract: PEMB1
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET M3D744 PEMB10 PNP resistor-equipped double transistor R1 = 2.2 kΩ, R2 = 47 kΩ Preliminary specification 2001 Sep 14 Philips Semiconductors Preliminary specification PNP resistor-equipped double transistor R1 = 2.2 kΩ, R2 = 47 kΩ

PEMB2

Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET M3D744 PEMB2 PNP resistor-equipped double transistor R1 = 47 kΩ, R2 = 47 kΩ Product specification 2001 Sep 14 Philips Semiconductors Product specification PNP resistor-equipped double transistor R1 = 47 kΩ, R2 = 47 kΩ

PDTC124EEF

Abstract: SC18 SC-89
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET M3D425 PDTC124EEF NPN resistor-equipped transistor; R1 = 22 kΩ, R2 = 22 kΩ Product specification 2002 Mar 14 Philips Semiconductors Product specification NPN resistor-equipped transistor; R1 = 22 kΩ, R2 = 22 kΩ PDTC124EEF

PDTC144WEF

Abstract: SC18 SC-89
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET M3D425 PDTC144WEF NPN resistor-equipped transistor; R1 = 47 kΩ, R2 = 22 kΩ Product specification 2002 Mar 14 Philips Semiconductors Product specification NPN resistor-equipped transistor; R1 = 47 kΩ, R2 = 22 kΩ PDTC144WEF

transistor 2sk

Abstract: transistor sp-10 4ac14 2SK157 transistor 2sk 70 2sj318 transistor 2sk 12 2SK2851 4AC14 TRANSISTOR 2sK 135 K 2796
Contextual Info: POWER TRANSISTOR •General switching Darlington transistor Characteristics tire 7.5 1 k - 20 k 6.0 1 k - 20 k 6.0 1 k - 20 k 8.0 1 k - 20 k 9.0 150011.5 500l_ 16.0 1 k -2 0 k 5.0 1 k -2 0 k 4.0 1 k -2 0 k 3.1 1 k -2 0 k 4.0 1 k -2 0 k 3.0 15006.0 1 k - 20 k

PNP TRANSISTOR SOT666

Abstract: MBK120 PEMB4 transistor K 14
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET M3D744 PEMB4 PNP resistor-equipped double transistor R1 = 10 kΩ, R2 = open Preliminary specification 2001 Sep 14 Philips Semiconductors Preliminary specification PNP resistor-equipped double transistor R1 = 10 kΩ, R2 = open

PNP TRANSISTOR SOT666

Abstract: PEMB3
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET M3D744 PEMB3 PNP resistor-equipped double transistor R1 = 4.7 kΩ, R2 = open Preliminary specification 2001 Sep 14 Philips Semiconductors Preliminary specification PNP resistor-equipped double transistor R1 = 4.7 kΩ, R2 = open

transistor npn double

Abstract: PEMH4
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET M3D744 PEMH4 NPN resistor-equipped double transistor R1 = 10 kΩ, R2 = open Preliminary specification 2001 Sep 14 Philips Semiconductors Preliminary specification NPN resistor-equipped double transistor R1 = 10 kΩ, R2 = open

TC114E

Abstract: PDTC114ES PDTC114EE PDTC114EEF PDTC114EK PDTC114EM PDTC114ET PDTC114EU SC-75 SC-89
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET PDTC114E series NPN resistor-equipped transistor; R1 = 10 kΩ, R2 = 10 kΩ Product data sheet Supersedes data of 2003 Apr 10 2004 Aug 05 NXP Semiconductors Product data sheet NPN resistor-equipped transistor; R1 = 10 kΩ, R2 = 10 kΩ

NTE74LS74A

Abstract: NTE7483 NTE74LS76A NTE7475 NTE7472 NTE7473 NTE7474 NTE74C74 NTE74H73 NTE74LS73
Contextual Info: INTEGRATED CIRCUITS - TTL TRANSISTOR TRANSISTOR LOGIC NTE74H71 14-Lead DIP, See Diag. 247 AND Gated J-K Master/Slave Flip-Flop “ /Preset & Clear Q 14-Lead DIP, See Diag. 247 NTE7472, NTE74H72 AND Gated J-K Master/Slave Flip-Flop “ /Preset & Clear Vcc

NTE74123

Abstract: NTE74HC123 NTE74121 NTE74HC125 NTE74LS113 NTE74LS114 NTE74LS122 Q204 NTE74120 NTE74LS112A
Contextual Info: INTEGRATED CIRCUITS - TTL TRANSISTOR TRANSISTOR LOGIC NTE74110 14-Lead DIP, See Diag. 247 AND Gated J -K Master/Slave Flip-Flop "/D ata Lockout NTE74111 16-Lead DIP, See Diag. 249 Dual J -K Flip-Flop Master/Slave "/D ata Lockout 16-Lead DIP, See Diag. 249

MPSA63

Abstract: MPSA62 MPSA64
Contextual Info: SEMICONDUCTOR MPSA62/63/64 TECHNICAL DATA EPITAXIAL PLANAR PNP TRANSISTOR GENERAL PURPOSE APPLICATION. DARLINGTON TRANSISTOR. B C FEATURES A Complementary to MPSA13/14. DIM A B C D E F G H J K L M N N E K MPSA62 Voltage MPSA63/64 Collector-Emitter MPSA62

NTE7474

Abstract: NTE74LS76A NTE7483 NTE74LS74A NTE74LS83A full adder NTE7476 NTE74LS75 NTE74S74 NTE74LS77
Contextual Info: INTEGRATED CIR CU ITS- TTL TRANSISTOR TRANSISTOR LOGIC NTE74H71 14-Lead DIP, See Diag. 247 AND Gated J-K Master/Slave Flip-Flop “ /Preset & Clear NTE7472, 14-Lead DIP, See Diag. 247 NTE74H72 AND Gated J -K Master/Slave Flip-Flop “ /Preset & Clear Q Vcc

Contextual Info: DATA SHEET COMPOUND TRANSISTOR AA1L3M on-chip resistor NPN silicon epitaxial transistor For mid-speed switching FEATURES PACKAGE DRAWING UNIT: mm • On-chip bias resistor (R1 = 4.7 kΩ, R2 = 4.7 kΩ) • Complementary transistor with AN1L3M ABSOLUTE MAXIMUM RATINGS (Ta = 25°°C)

Contextual Info: INTEGRATED CIR CU ITS- TTL TRANSISTOR TRANSISTOR LOGIC NTE74H71 14-Lead DIP, See Diag. 247 AND Gated J -K Master/Slave Flip-Flop “ /Preset & Clear NTE7472, 14-Lead DIP, See Diag. 247 NTE74H72 AND Gated J -K Master/Slave Flip-Flop “ /Preset & Clear 0 Vcc

PDTC143EMB

Abstract: PDTA143
Contextual Info: 83B PDTA143EMB SO T8 PNP resistor-equipped transistor; R1 = 4.7 k , R2 = 4.7 k Rev. 1 — 14 May 2012 Product data sheet 1. Product profile 1.1 General description PNP Resistor-Equipped Transistor RET in a leadless ultra small DFN1006B-3 (SOT883B) Surface-Mounted Device (SMD) plastic package.

mpsa63

Abstract: MPSA63.64 MPS-A62 HMPSA63 MPSA62
Contextual Info: SEMICONDUCTOR MPSA62/63/64 TECHNICAL DATA EPITAXIAL PLANAR PNP TRANSISTOR GENERAL PURPOSE APPLICATION. DARLINGTON TRANSISTOR. B C FEATURES A ・Complementary to MPSA13/14. DIM A B C D E F G H J K L M N N E K MAXIMUM RATING Ta=25℃ SYMBOL RATING Collector-Base

igbt module bsm 200

Abstract: GB60 igbt module bsm 300 eupec igbt BSM 100 gb
Contextual Info: Technische Information / Technical Information IGBT-Module IGBT-Modules BSM 200 GB 60 DLC Thermische Eigenschaften / Thermal properties min. typ. max. - - 0,17 K/W - - 0,29 K/W Innerer Wärmewiderstand thermal resistance, junction to case Transistor / transistor, DC

TC114E

Abstract: PDTC114ES PDTC114EE PDTC114EEF PDTC114EK PDTC114EM PDTC114ET PDTC114EU SC-75 SC-89
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET PDTC114E series NPN resistor-equipped transistor; R1 = 10 kΩ, R2 = 10 kΩ Product specification Supersedes data of 2003 Apr 10 2004 Aug 05 Philips Semiconductors Product specification NPN resistor-equipped transistor;

SMD transistor MARKING CODE 43

Abstract: TRANSISTOR SMD MARKING CODE A1 TRANSISTOR SMD MARKING CODE 42 SMD Transistor A1 TC114E smd TRANSISTOR code marking 36 smd TRANSISTOR code marking 013 Transistor SMD marking code NV smd transistor 023 TRANSISTOR SMD MARKING CODE X D
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET PDTC114E series NPN resistor-equipped transistor; R1 = 10 kΩ, R2 = 10 kΩ Product specification Supersedes data of 1999 May 31 2003 Apr 10 Philips Semiconductors Product specification NPN resistor-equipped transistor;

PDTC114ES

Abstract: PDTC114EE TC114E PDTC114EEF PDTC114EK PDTC114EM PDTC114ET PDTC114EU SC-75 SC-89
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET PDTC114E series NPN resistor-equipped transistor; R1 = 10 kΩ, R2 = 10 kΩ Product specification Supersedes data of 1999 May 31 2003 Apr 10 Philips Semiconductors Product specification NPN resistor-equipped transistor;

PDTC143EMB

Contextual Info: 83B PDTA143EMB SO T8 PNP resistor-equipped transistor; R1 = 4.7 kΩ, R2 = 4.7 kΩ Rev. 1 — 14 May 2012 Product data sheet 1. Product profile 1.1 General description PNP Resistor-Equipped Transistor RET in a leadless ultra small DFN1006B-3 (SOT883B) Surface-Mounted Device (SMD) plastic package.

MPSA63

Abstract: MPSA13 MPSA62 MPSA64
Contextual Info: SEMICONDUCTOR MPSA62/63/64 TECHNICAL DATA EPITAXIAL PLANAR PNP TRANSISTOR GENERAL PURPOSE APPLICATION. DARLINGTON TRANSISTOR. B C FEATURES A ᴌComplementary to MPSA13/14. DIM A B C D E F G H J K L M N N E K MAXIMUM RATING Ta=25ᴱ Voltage MPSA63/64 Collector-Emitter