TRANSISTOR K 1254 Search Results

PDTA123YT

Abstract: PDTC123YT
Contextual Info: PDTA123YT PNP resistor-equipped transistor; R1 = 2.2 kΩ, R2 = 10 kΩ Rev. 02 — 11 June 2004 Objective data 1. Product profile 1.1 General description PNP resistor-equipped transistor. NPN complement: PDTC123YT. 1.2 Features • Built-in bias resistors

Contextual Info: PDTA113ZT PNP resistor-equipped transistor; R1 = 1 kΩ, R2 = 10 kΩ Rev. 01 — 25 March 2004 Objective data sheet 1. Product profile 1.1 General description PNP resistor-equipped transistor. NPN complement: PDTC113ZT. 1.2 Features • Built-in bias resistors

Contextual Info: PDTA123YT PNP resistor-equipped transistor; R1 = 2.2 kΩ, R2 = 10 kΩ Rev. 01 — 25 March 2004 Objective data sheet 1. Product profile 1.1 General description PNP resistor-equipped transistor. NPN complement: PDTC123YT. 1.2 Features • Built-in bias resistors

PDTA123YT

Abstract: PDTC123YT
Contextual Info: PDTA123YT PNP resistor-equipped transistor; R1 = 2.2 kΩ, R2 = 10 kΩ Rev. 01 — 25 March 2004 Objective data sheet 1. Product profile 1.1 General description PNP resistor-equipped transistor. NPN complement: PDTC123YT. 1.2 Features • Built-in bias resistors

PDTA113ET

Abstract: PDTC113ET
Contextual Info: PDTA113ET PNP resistor-equipped transistor; R1 = 1 kΩ, R2 = 1 kΩ Rev. 03 — 20 July 2004 Objective data sheet 1. Product profile 1.1 General description PNP resistor-equipped transistor. NPN complement: PDTC113ET. 1.2 Features • Built-in bias resistors

PDTA113ZT

Abstract: PDTC113ZT
Contextual Info: PDTA113ZT PNP resistor-equipped transistor; R1 = 1 kΩ, R2 = 10 kΩ Rev. 01 — 25 March 2004 Objective data sheet 1. Product profile 1.1 General description PNP resistor-equipped transistor. NPN complement: PDTC113ZT. 1.2 Features • Built-in bias resistors

PDTA115TT

Abstract: PDTC115TT
Contextual Info: PDTA115TT PNP resistor-equipped transistor; R1 = 100 kΩ, R2 = open Rev. 03 — 7 September 2004 Product data sheet 1. Product profile 1.1 General description PNP resistor-equipped transistor. NPN complement: PDTC115TT. 1.2 Features • Built-in bias resistor

mmbt3904 motorola

Abstract: 2N3904 for 2n3904 SST3904 TRANSISTOR noise figure measurements 2N3904 transistor data sheet free download 496k AN1944 FMMT3904CT SMB3904
Contextual Info: A/D and D/A CONVERSION/SAMPLING CIRCUITS Application Note 1944: Mar 21, 2003 MEASUREMENT CIRCUITS TEMPERATURE SENSORS Temperature Monitoring Using the MAX1253/54 and MAX1153/54 The MAX1253/54 and MAX1153/54 system monitors are a low cost solution for monitoring multiple temperatures in a system. This application note explains how to

for 2N3904

Abstract: transistor a 1944 SMB3904 TRANSISTOR k 1254 TRANSISTOR noise figure measurements CMPT3904 MMBT3904 SST3904 mmbt3904 motorola transistor temperature sensor motorola
Contextual Info: Maxim > App Notes > A/D and D/A CONVERSION/SAMPLING CIRCUITS TEMPERATURE SENSORS and THERMAL MANAGEMENT Keywords: temperature, thermometer, diode, thermistor, thermister, ADC, die temp, temp, system monitor, diode sensor, analog to digital converter Mar 21, 2003

bd7995

Abstract: P8243 178M15 transistor b492 TRANSISTOR BJ 131-6 P8035 sk 7443 1334 diode LM1456 LM 8361
Contextual Info: H F To X 8366IT U N E B Issue 2/8534 STR910A B26000 2000 General Wiring Diagram Figure 10.1 +28 V sense) GROUND Meter Batt. sense + Sense Isolated Ground Batt. GND O FF 28 V O FF (T X O F F ) Relays K4, K1 & K2 BATT. MODE »DC» Relays K5, K6 +8 V in GROUND

LS 2027 audio amp

Abstract: ECG transistor replacement guide book free 2sb337 TRANSISTOR REPLACEMENT GUIDE 980510 S9510 2sb508 C24850772 2N339 bc149c
Contextual Info: TABLE OF CONTENTS Introduction. Page 2 How to Use This Book. Page 2 Care and Handling of T ran sisto rs. Page 3

TIS43

Abstract: equivalent of transistor bc214 BF257 Texas equivalent of transistor bc212 bc 214 2N696 TEXAS INSTRUMENTS Q2T2222 TIS70 BFR40 kd 2060 transistor BF195 equivalent
Contextual Info: The Transistor and Diode Data Book for Design Engineers Volume II Northern European Edition IMPORTANT NOTICES Texas Instrum ents Ltd ., reserves the rig h t to make changes at any tim e in order to improve design and to supply the best p ro d u c t possible.

25CC

Abstract: MJE18206 MJF18206 J280 LB013
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA M JE18206 M JF18206 D esigner’s Data Sheet SWITCHMODE ™NPN Bipolar Power Transistor for Electronic Light B allast and Switching Power Supply Applications POWER TRANSISTORS 8 AMPERES 1200 VOLTS 40 and 100 WATTS

driver transistor hfe150

Abstract: 530k resistor HT817D0
Contextual Info: HT817D0 16.8-Second LOG-PCM Speech Features • · · · · · · · · Operating voltage: 3.6V~5.0V Directly drives an external transistor Low standby current 1mA typ. for VDD=3V Minimal external components 508 words table ROM for key functions Programmable silence length and end-pulse

2sb504

Abstract: KPL 3009 2SB502 BLY34 germanium BF316A BSX12 2SD716, 2SB686 35W amplifiers bf197 acy52
Contextual Info: TRANSISTOR DATA TABLES Other Titles of Interest B P 85 International Transistor Equivalents Guide B P286 A R eferen ce G uide to Basic Electronics Terms BP287 A R eferen ce G uide to Practical Electronics Terms n TRANSISTOR DATA TABLES by Hans-Gunther Steidle

Contextual Info: MOTOROLA O rder this docum ent by M TV10N100E/D SEMICONDUCTOR TECHNICAL DATA D esigner’s Data Sheet M TV10N 100E TMOS E-FET™ Power Field Effect Transistor D3PAK for Surface Mount TM OS POWER FET 10 AMPERES 1000 VOLTS N-Channel Enhancement-Mode Silicon Gate

Application Note tda5145

Abstract: Star Delta Control circuit for 3 phase motor TDA5145 TDA5145T TDAS145 3 phase brushless dc motor delta motor motor drive ic star delta connection circuit diagrams star delta diagram motor
Contextual Info: Product specification Philips Semiconductors Linear Products Brushless DC motor drive circuit TDA5145 FEATURES APPLICATIONS • Full-wave commutation using push/pull drivers at the output stages without position sensors • General purpose spindle driver e.g.:

CA3KN31BD

Abstract: LA1DN11 telemecanique lc1d09 LC1K09 telemecanique D range contactors relays telemecanique LP1D0910BD Telemecanique LR2D1321 telemecanique contactors Telemecanique LC1k
Contextual Info: CONTROL GEAR/DIN TERMINALS AC contactors page 239 Time delay control blocks page 240 DIN rail terminals page 248 Thermal overload relays page 239 Auxiliary contact blocks 241 Coil suppressor modules 241 Contact blocks 239-241, 244 Contactors 239-241 Control relays

2n3773 power Amplifier circuit diagrams

Abstract: 10000 watt stabilizer transformer winding formula 2N3773 audio amplifier diagram lm380 equivalent LM566 "direct replacement" LM1820 LM1800 schematic diagram audio power amplifier using 2n3055 mc1349 GS 358S
Contextual Info: Volume 2 National P R E F A C E The second volum e o f N a tio n a l's Linear A p p lic a tio n s h a n d b o o k picks up w here V o lu m e I le ft o ff. Data sheets, a p p lic a tio n briefs and p e rtin e n t articles published in th e 3 years since V o lu m e I was p rin te d are

100-ETY

Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA D esigner’s Data Sheet M TV 10N 100E TM O S E -FE T ™ P o w er Field E ffe c t Tran sisto r D3PAK for S u rfa c e M ount TMOS POWER FET 10 AMPERES 1000 VOLTS N-Channel Enhancement-Mode Silicon Gate The D 3PAK package has the capability o f housing the largest chip

MSC1002

Abstract: AVIA c cube IC CD 4440 amplifier circuit diagram
Contextual Info: TABLE OF CONTENTS INTRODUCTION ALPHANUMERICAL INDEX Page 4 7 PRODUCTS GUIDE 11 -SYM BO LS -SELECTION GUIDE -C R O S S REFERENCE 13 14 37 DATASHEETS 45 INTRODUCTION SGS-THOMSON MICROELECTRONICS, RF PRODUCTS GROUP RF & MICROWAVE COMPONENTS DATABOOK, 2nd Edition

equivalent transistor c 5888

Contextual Info: • Philips Semiconductors bbS3R31 0025318 350 H A P X N AUER PHILIPS/DISCRETE Product specification b7E NPN 9 GHz wideband transistor FEATURES BFS520 PINNING • High power gain PIN CONFIGURATION DESCRIPTION PIN • Low noise figure Code: N2 • High transition frequency

Contextual Info: 19-1254; Rev 0; 7/97 3 . 3 V / 5 V or A d j u s t a b l e , S t e p - U p / D o w n DC-DC C o n v e r t e r s The MAX710/MAX711 can be configured for minimum noise or optimum efficiency. Shutdown control turns off the part com pletely, disconnecting the input from the

11744 502

Contextual Info: SIEMENS BFP 280 NPN Silicon RF Transistor • For low noise, low-power amplifiers in mobile communication systems pager, cordless telephone at collector currents from 0.2mA to 8mA • fT = 7,5GHz F = 1.5dB at 900MHz REs Q62702-F1378 1 =C 2=E 3=B Package