TRANSISTOR J45 Search Results

la 4440 amplifier circuit diagram 300 watt

Abstract: la 4440 amplifier circuit diagram 300 watt diode LT 7229 2sd323 YM 7137 3D DA 3807 pdf transistor inverter welder 4 schematic 2N5630 THYRISTOR br 403 1N3492
Contextual Info: Alphanumeric Index Power Transistor Selector Guide Power Transistor Cross Reference Power Transistor Data Sheets Thyristor Selector Guide Thyristor Cross Reference Thyristor Data Sheets Leadforms, Hardware, and Mounting Techniques R ectifier and Zener Diode

mj4502

Contextual Info: MOTOROLA Order this document by MJ4502/D SEMICONDUCTOR TECHNICAL DATA M J4502 H igh-Pow er PNP Silicon Transistor . . . for use as an output device in complementary audio amplifiers to 100-W atts music power per channel. • • • 30 AMPERE POWER TRANSISTOR

2sb504

Abstract: KPL 3009 2SB502 BLY34 germanium BF316A BSX12 2SD716, 2SB686 35W amplifiers bf197 acy52
Contextual Info: TRANSISTOR DATA TABLES Other Titles of Interest B P 85 International Transistor Equivalents Guide B P286 A R eferen ce G uide to Basic Electronics Terms BP287 A R eferen ce G uide to Practical Electronics Terms n TRANSISTOR DATA TABLES by Hans-Gunther Steidle

BLW89

Abstract: philips resistor CR37 blw89 transistor CR37
Contextual Info: PHILIPS INTERNATIONAL bSE D 711002 D 0 b 3 3 7 ,:î 2öM PHIN B LW 89 U.H.F. POWER TRANSISTOR N-P-N silicon planar epitaxial transistor suitable for transmitting applications in class-A, B or C in the u.h.f. and v.h.f. range for a nominal supply voltage of 28 V. The transistor is resistance stabilized and

2N2222A 338

Abstract: TFK 949 2N1167 halbleiter index transistor ad161 BSY19 al103 ac128 TFK 404 Tfk 931
Contextual Info: Towers' International Transistor Selector Towers’ International Transistor Selector Specification data for the identification, selection and substitution of transistors by T D Towers, MBE, MA, BSc, C Eng, MIERE Revised Edition U p date One London: NEW YORK

BP 109 transistor

Abstract: transistor BP 109 CHK015A-SMA CHK015A HEMT Amplifier transistor GaN transistor 04 N 70 BP Gan transistor CHK-01
Contextual Info: Advance Information: AI1010 15W Power Packaged Transistor GaN HEMT on SiC UMS’s CHK015A is an unmatched Packaged Gallium Nitride High Electron Mobility Transistor. It offers a general purpose and broadband solution for a variety of RF power applications.

transistor tt 2222

Abstract: ic TT 2222 BLW 89 blw89 transistor
Contextual Info: PHILIPS INTERNATIONAL bSE D m 7110fl5b GübBB?'! EÔ4 PHIN BLW 89 J \ _ U.H.F. PO W ER T R A N SIS T O R N-P-N silicon planar epitaxial transistor suitable for transmitting applications in class-A, B or C in the u.h.f. and v.h.f. range for a nominal supply voltage of 28 V. The transistor is resistance stabilized and

Contextual Info: N AMER PHILIPS/DISCRETE b^E » • bbS3^31 DQ2T4fl2 fiTb * A P X BLW 89 U.H.F. PO W ER T R A N SIS T O R N-P-N silicon planar epitaxial transistor suitable for transmitting applications in class-A, B or C in the u.h.f. and v.h.f. range for a nominal supply voltage of 28 V. The transistor is resistance stabilized and

Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA M J4502 High-Pow er PNP Silicon Ttansistor . . . for use as an output device in complementary audio amplifiers to 100-Watts music power per channel. 30 AMPERE POWER TRANSISTOR PNP SILICON 100 VOLTS 200 WATTS • High DC Current Gain — hpE = 2 5 -1 0 0 @ lc = 7.5 A

vk200-20

Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF Line NPN Silicon H igh-Frequency Transistor MRF313 . . designed for wideband amplifier, driver or oscillator applications in military, mobile, and aircraft radio. • Specified 28 Volt, 400 MHz Characteristics —

Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MRF313 The RF Line NPN Silicon High-Frequency TVansistor . . . designed for wideband amplifier, driver or oscillator applications in military, 1.0 W, 400 MHz HIGH-FREQUENCY TRANSISTOR NPN SILICON mobile, and aircraft radio.

mrf313

Contextual Info: MOTOROLA Order this document by MRF313/D SEMICONDUCTOR TECHNICAL DATA NPN Silicon High-Frequency Transistor MRF313 . . . designed for wideband amplifier, driver or oscillator applications in military, mobile, and aircraft radio. • Specified 28 Volt, 400 MHz Characteristics —

MRF313

Abstract: vk200 5Bp power BALLAST MOTOROLA
Contextual Info: MOTOROLA Order this document by MRF313/D SEMICONDUCTOR TECHNICAL DATA The RF Line NPN Silicon High-Frequency Transistor MRF313 . . . designed for wideband amplifier, driver or oscillator applications in military, mobile, and aircraft radio. • Specified 28 Volt, 400 MHz Characteristics —

A5 GNE mosfet

Abstract: jo3501 2N4427 equivalent bfr91 2N503 2N5160 MOTOROLA BF431 BFR96 HY 1906 transistor jo2015 kd 2060 transistor
Contextual Info: Volume I Selector Guide 1 Discrete Transistor Data Sheets 2 Case Dimensions 3 Volume II Selector Guide ^ Amplifier Data Sheets Tuning, Hot Carrier and PIN Diode Data Sheets 6 Technical Information Case Dimensions Cross Reference and Sales Offices 8 9 MOTOROLA

Motorola transistors MRF 947

Abstract: trimpots 3296 transistor C5386 1n4740 2N5591 Motorola 2N5688 CQ 542 Transistor npn motorola equivalent transistor of 2sc3358 HB215/D ic cd 2399 gp
Contextual Info: Selector Guide 1 Discrete Transistor Data Sheets Amplifier Data Sheets Monolithic Integrated Circuit H Data Sheets mm Case Dimensions Cross Reference and Sales Offices 6 M MOTOROLA RF Device Data This publication presents technical information for the several product families that

TP3007S

Contextual Info: MOTOROLA Order this document by TP3007S/D SEMICONDUCTOR TECHNICAL DATA The RF Line NPN Silicon RF Power Transistor TP3007S The TP3007S is designed for 24 volts common emitter base station amplifiers, operating up to 1 GHz bandwidth. It has been specifically designed

k106 transistor

Abstract: IRC643 IRF642 IRF643 IRF642 ge C643
Contextual Info: IRF642,643 l5 116 AMPERES 200,150 VOLTS Rd S ON = 0.22 n FIELD EFFECT POWER TRANSISTOR This series of N-Channel Enhancement-mode Power MOSFETs utilizes GE’s advanced Power DMOS technology to achieve low on-resistance with excellent device rugged­ ness and reliability.

2SC1424

Abstract: 2SC4090 017 545 71 32 02 2SC2026
Contextual Info: NPN SILICON GENERAL PURPOSE TRANSISTOR NE734 SERIES FEATURES_ • LOW NOISE FIGURE: < 3 dB at 500 MHz • HIGH GAIN: 15 dB at 500 MHz • HIGH GAIN BANDWIDTH PRODUCT: 2 GHz 3 GHz for the NE73435 I • SMALL COLLECTOR CAPACITANCE: 1 pF

Contextual Info: na. TELEPHONE: 973 376-2922 (212)227-6005 FAX: (973) 378-6960 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. POWER TRANSISTOR ABSOLUTE MAXIMUM RATINGS Collector diode voltage VCI! . -SO volts (Y*;it — —1-5 volts) Emitter diode voltage YK1!0 .,.;.-[0 volts

JE1100

Abstract: MFC8040 MFC8030 MC1316 Triac 9707 schematic of mc1466 Transistor MJE 5332 je 3055 Motorola MCR407-2 MC1466
Contextual Info: M ASTER SELECTION GUIDE MOTOROLA Semiconductors SELECTING THE BEST SEMICONDUCTOR Selecting the best semiconductor fo r a given application can pose a significant challenge. To sim plify the task in selecting a "best" transistor, diode or other device fo r newdesigns, this book's selection tables includeall popular semiconductor devices

TP251 transistor

Abstract: tp251
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF Line UHF Power Transistor . . . designed p rim a rily fo r p o rta b le radio a pp licatio n s re q u irin g lo w b a tte ry voltag e . These parts have been desig n ed and characterized fo r o pe ra tio n in the fre q u en cy range

TP3007S

Abstract: 1206 transistor
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF Line NPN Silicon RF Power Transistor T h e T P 3 0 0 7 S is d e s ig n e d fo r 24 v o lts c o m m o n e m itte r b a se sta tio n amplifiers, operating up to 1 GHz bandwidth. It has been specifically designed for use in analog and digital G lobal S ystem M obile G SM system s. The

optocoupler a 4504

Abstract: a 4504 HCPL-4504 HCPL4504 4504 opto HCNW4504 hcpl series E55361 HCPL-0454 HCPL-J454
Contextual Info: High CMR, High Speed Optocouplers HCPL-4504 HCPL-J454 HCPL-0454 HCNW4504 Technical Data Features • Short Propagation Delays for TTL and IPM Applications • 15 kV/µs Minimum Common Mode Transient Immunity at VCM = 1500 V for TTL/Load Drive • High CTR at TA = 25°C

Contextual Info: High CMR, High Speed Optocouplers HCPL-4504 HCPL-J454 HCPL-0454 HCNW4504 Technical Data Features • Short Propagation Delays for TTL and IPM Applications • 15 kV/µs Minimum Common Mode Transient Immunity at VCM = 1500 V for TTL/Load Drive • High CTR at TA = 25°C