TRANSISTOR J25 Search Results

la 4440 amplifier circuit diagram 300 watt

Abstract: la 4440 amplifier circuit diagram 300 watt diode LT 7229 2sd323 YM 7137 3D DA 3807 pdf transistor inverter welder 4 schematic 2N5630 THYRISTOR br 403 1N3492
Contextual Info: Alphanumeric Index Power Transistor Selector Guide Power Transistor Cross Reference Power Transistor Data Sheets Thyristor Selector Guide Thyristor Cross Reference Thyristor Data Sheets Leadforms, Hardware, and Mounting Techniques R ectifier and Zener Diode

transistor s11 s12 s21 s22

Abstract: NE856M02-T1-AZ NE856M02
Contextual Info: SILICON TRANSISTOR NE856M02 NPN EPITAXIAL SILICON TRANSISTOR HIGH FREQUENCY LOW DISTORTION AMPLIFIER FEATURES • • PACKAGE OUTLINE M02 BOTTOM VIEW 4.5±0.1 1.6±0.2 C E B E 0.8 MIN DESCRIPTION The NE856M02 is an NPN silicon epitaxial bipolar transistor

transistor bfr96

Abstract: BFR96 BFR964 RF NPN POWER TRANSISTOR 3 GHZ 200 watts motorola J50 datasheet for transistor bfr96 BFR96 TRANSISTOR BFR961 RF TRANSISTOR 1.5 GHZ BFR96 motorola
Contextual Info: MOTOROLA Order this document by BFR96/D SEMICONDUCTOR TECHNICAL DATA The RF Line NPN Silicon High-Frequency Transistor BFR96 The BFR96 transistor uses the same state–of–the–art microwave transistor chip which features fine–line geometry, ion–implanted arsenic emitters and gold

2SC4867

Abstract: 16T MARKING 2SC4871 FH201 ZS21 TA-1315 1hz OUTPUT 7CJE
Contextual Info: Ordering number:ENN6117 NPN Epitaxial Planar Silicon Composite Transistor FH201 SAÈÈYOI VCO OSC Circuit Applications Features Package Dimensions • C om p osite type w ith a buffer transistor 2 S C 4 8 7 1 and a oscillator transistor (2 S C 4 8 6 7 ) contained in

IC 1709 CN

Abstract: 2SC5226 2SC5245 FH202 TS4162 ZS12 S21C TA-1708 D054471
Contextual Info: Ordering number:ENN6220 N PN Epitaxial Planar Silicon Composite Transistor FH202 SAÊÊYOI VCO OSC Circuit Applications Features Package Dimensions •Composite type with a buffer transistor 2SC5226 and a oscillator transistors (TS4162) contained in the

Contextual Info: Philips Semiconductors Product Specification PowerMOS transistor Logic level FET _ . GENERAL DESCRIPTION N-channel enhancement mode logic level field-effect power transistor in a plastic envelope. The device is intended for use in Switched Mode Power Supplies

7746-1

Abstract: 7746-1 transistor 33167 NSF2250WT1 34993 98938 60931 9031
Contextual Info: NSF2250WT1 NPN Silicon Oscillator and Mixer Transistor The NSF2250WT1 NPN silicon epitaxial bipolar transistor is intended for use in general purpose UHF oscillator and mixer applications. It is suitable for automovtive keyless entry and TV tuner designs.

7746-1

Abstract: 7746-1 transistor NSF2250WT1
Contextual Info: NSF2250WT1 NPN Silicon Oscillator and Mixer Transistor The NSF2250WT1 NPN silicon epitaxial bipolar transistor is intended for use in general purpose UHF oscillator and mixer applications. It is suitable for automovtive keyless entry and TV tuner designs.

2N2222A 338

Abstract: TFK 949 2N1167 halbleiter index transistor ad161 BSY19 al103 ac128 TFK 404 Tfk 931
Contextual Info: Towers' International Transistor Selector Towers’ International Transistor Selector Specification data for the identification, selection and substitution of transistors by T D Towers, MBE, MA, BSc, C Eng, MIERE Revised Edition U p date One London: NEW YORK

1011 sot323 marking

Abstract: SC 2313 78272 7746-1 110981
Contextual Info: NSF2250WT1 Advance Information NPN Silicon Oscillator and Mixer Transistor The NSF2250WT1 NPN silicon epitaxial bipolar transistor is intended for use in general purpose UHF oscillator and mixer applications. It is suitable for automovtive keyless entry and TV tuner

7746-1 transistor

Abstract: 7746-1 67723 78272 54652
Contextual Info: NSF2250WT1 Advance Information NPN Silicon Oscillator and Mixer Transistor The NSF2250WT1 NPN silicon epitaxial bipolar transistor is intended for use in general purpose UHF oscillator and mixer applications. It is suitable for automovtive keyless entry and TV tuner

3-pin IC 7806

Abstract: NSF2250WT1 89445 7746-1 transistor 34993
Contextual Info: NSF2250WT1 Advance Information NPN Silicon Oscillator and Mixer Transistor The NSF2250WT1 NPN silicon epitaxial bipolar transistor is intended for use in general purpose UHF oscillator and mixer applications. It is suitable for automovtive keyless entry and TV tuner

BP 109 transistor

Abstract: transistor BP 109 CHK015A-SMA CHK015A HEMT Amplifier transistor GaN transistor 04 N 70 BP Gan transistor CHK-01
Contextual Info: Advance Information: AI1010 15W Power Packaged Transistor GaN HEMT on SiC UMS’s CHK015A is an unmatched Packaged Gallium Nitride High Electron Mobility Transistor. It offers a general purpose and broadband solution for a variety of RF power applications.

Contextual Info: Philips Semiconductors Product specification PowerMOS transistor GENERAL DESCRIPTION BUK466-200A QUICK REFERENCE DATA N-channel enhancement mode field-effect power transistor in a plastic envelope suitable for use in surface mount applications. The device is intended for use in

KF 13002 F

Abstract: TRANSISTOR 9642 kf 13002 rbm 0505 2SC5787 NE894M13 NE894M13-A NE894M13-T3-A S21E Q1 k 1821
Contextual Info: NPN SILICON TRANSISTOR NE894M13 OUTLINE DIMENSIONS Units in mm FEATURES PACKAGE OUTLINE M13 0.1 3 0.2+0.1 ñ0.05 0.3 0.1 0.125+0.1 ñ0.05 NEC's NE894M13 transistor is designed for oscillator applications above 3 GHz. The NE894M13 features low voltage, low

transistor c 6073

Abstract: 0809 af kf 982 c 4235 transistor npn BF 6591 2SC5786 BJT BF 331 SiS 671 AN1026 NE894M03
Contextual Info: NEC's NPN SILICON TRANSISTOR NE894M03 FEATURES • OUTLINE DIMENSIONS Units in mm MINIATURE M03 PACKAGE: – Small transistor outline – Low profile / 0.59 mm package height – Flat lead style for better RF performance • IDEAL FOR > 3 GHz OSCILLATORS

POE-15

Abstract: RF NPN POWER TRANSISTOR 5 WATT 2.4 GHZ 18801 PH1819-15N bipolar power transistor wacom
Contextual Info: * s z E f FEYi = -= -=-= = ,’ E an AMP company Wireless Bipolar Power Transistor, 1.78 - 1.90 GHz . 15W PH1819-15N v2.00 Features NPN Silicon Microwave Power Transistor Designed for Linear Amplifier Applications Class AB: -34 dBc Typ 3rd IMD at 15 Watts PEP

BFP620 acs

Abstract: BFP620 s parameters 4ghz
Contextual Info: BFP620 NPN Silicon Germanium RF Transistor 3 • High gain low noise RF transistor 4 • Provides outstanding performance for a wide range of wireless applications • Ideal for CDMA and WLAN applications • Outstanding noise figure F = 0.7 dB at 1.8 GHz

transistor s11 s12 s21 s22

Abstract: 5091-8350E MICROWAVE POWER TRANSISTOR IMPEDANCE MEASUREMENT high power FET transistor s-parameters s11a1 s-parameter s11 s12 s21
Contextual Info: High-Frequency Transistor Primer Part II Noise and S-parameter Characterization This is the second part of the Hewlett-Packard High Frequency Transistor Primer series. It is an introduction to the noise and S-parameter characterization of GaAs FET and silicon bipolar

2SC2055

Contextual Info: MITSUBISHI RF POWER TRANSISTOR 2SC20S5 NPN EPITAXIAL PLANAR TYPE DESCRIPTION 2SC2055 is a silicon NPN epitaxial planar type transistor designed for RF amplifiers on VHF band portable or hand-held radio applications. FEATURES • High power gain: Gpe > 1 3 d B

RF transistors with s-parameters

Abstract: MICROWAVE POWER TRANSISTOR IMPEDANCE MEASUREMENT transistor s11 s12 s21 s22 Hewlett-Packard transistor microwave
Contextual Info: High-Frequency Transistor Primer Part II Noise and S-parameter Characterization This is the second part of the Hewlett-Packard High Frequency Transistor Primer series. It is an introduction to the noise and S-parameter characterization of GaAs FET and silicon bipolar

2SC2055

Contextual Info: MITSUBISHI RF POWER TRANSISTOR 2SC2055 NPN EPITAXIAL PLANAR TYPE DESCRIPTION OUTLINE DRAWING 2SC2055 is a silicon NPN epitaxial planar type transistor designed for RF amplifiers on VHF band portable or hand-held radio applications. Dimensions i 0 5 .1 M A X

high power FET transistor s-parameters

Abstract: transistor s11 s12 s21 s22 FET transistors with s-parameters transistor s parameters noise 2S12 circle of constant Noise MICROWAVE POWER TRANSISTOR IMPEDANCE MEASUREMENT bipolar transistor ghz s-parameter s21a1
Contextual Info: High-Frequency Transistor Primer Part II Noise and S-parameter Characterization This is the second part of the Agilent Technologies High Frequency Transistor Primer series. It is an introduction to the noise and S-parameter characterization of GaAs FET and silicon bipolar

bipolarics

Abstract: 2N2904 BPT23E02
Contextual Info: BIPOLARICS, INC. Part Number BPT23E02 SILICON MICROWAVE POWER TRANSISTOR PRODUCT DATA SHEET FEATURES: • High DESCRIPTION AND APPLICATIONS: Output Power 2 Watts @ 2.3 GHz • High Gain Bandwidth Product f = 6.0 GHz @ IC = 320 mA t Bipolarics' BPT23E02 is a high performance silicon bipolar transistor