TRANSISTOR J18 Search Results

Contextual Info: N AMER PHILIPS/DISCRETE b^E J> bt.53^31 002A730 253 APX BFS23A V.H.F. POWER TRANSISTOR N-P-N epitaxial planar transistor intended for use in class-A, B and C operated mobile, industrial and military transmitters with a supply voltage of 28 V. The transistor is resistance stabilized. Every tran­

philips bfq42

Contextual Info: N AMER PHIL IPS /DI SCRE TE b^E D b b S B T i l 0 0 26 7 0 5 OTfl BFQ42 APX V.H.F. POWER TRANSISTOR N-P-N silicon planar epitaxial transistor intended for use in class-A, B or C operated mobile transmitters with a nominal supply voltage o f 13,5 V. The transistor is resistance stabilized and is

2N2222A 338

Abstract: TFK 949 2N1167 halbleiter index transistor ad161 BSY19 al103 ac128 TFK 404 Tfk 931
Contextual Info: Towers' International Transistor Selector Towers’ International Transistor Selector Specification data for the identification, selection and substitution of transistors by T D Towers, MBE, MA, BSc, C Eng, MIERE Revised Edition U p date One London: NEW YORK

sx3704

Abstract: AP239 Transistor 80139 8C547 6C131C IN2222A 2N50B 2N2064 radio AC176 AC126 sft353
Contextual Info: INTERNATIONAL TRANSISTOR EQUIVALENTS GUIDE A LSO BY THE S A M E AUTHOR BP108 International Diode Equivalents Guide BP140 Digital IC Equivalents and Pin Connections BP141 Linear IC Equivalents and Pin Connections ALSO OF INTEREST BP234 Transistor Selector Guide

omni spectra sma

Abstract: transistor n03 PH2856
Contextual Info: Linear Accelerator Pulsed Power Transistor PH2856-3 3 Watts, 2.856 GHz, 12 is Pulse, 10% Duty Features • • • • • • • • Outline Drawing NPN Silicon Microwave Power Transistor Common Base Configuration Class C Operation Interdigitated Geometry

IB3135

Contextual Info: Part Number: Integra IB3135MH5 TECHNOLOGIES, INC. Silicon Bipolar  Ultra-high fT S-Band Radar Transistor Class C Operation  High Efficiency The high power pulsed radar transistor device part number IB3135MH5 is designed for S-Band radar systems operating

Contextual Info: Document Number: AFT26P100−4WS Rev. 1, 8/2013 Freescale Semiconductor Technical Data RF Power LDMOS Transistor N−Channel Enhancement−Mode Lateral MOSFET This 22 watt symmetrical Doherty RF power LDMOS transistor is designed for cellular base station applications requiring very wide instantaneous

Contextual Info: Document Number: AFT26P100−4WS Rev. 0, 5/2013 Freescale Semiconductor Technical Data RF Power LDMOS Transistor N−Channel Enhancement−Mode Lateral MOSFET This 22 watt symmetrical Doherty RF power LDMOS transistor is designed for cellular base station applications requiring very wide instantaneous

tlc 1451

Abstract: TRANSISTOR T-03 13MM ATC100A PH2931-20M Rogers 6010.5
Contextual Info: AjûKim m an AM P company Radar Pulsed Power Transistor, 20W, IOOjis Pulse, 10% Duty PH2931-20M 2.9 - 3.1 GHz V2.00 Features • NPN Silicon Microwave Power Transistor • Common Base Configuration • Broadband Class C Operation • High Efficiency Interdigitated Geometry

Contextual Info: Document Number: AFT27S010N Rev. 0, 11/2013 Freescale Semiconductor Technical Data RF Power LDMOS Transistor N-Channel Enhancement-Mode Lateral MOSFET This 1.26 W RF power LDMOS transistor is designed for cellular base station applications covering the frequency range of 728 to 2700 MHz.

Contextual Info: Freescale Semiconductor Technical Data Document Number: A2T26H160-24S Rev. 0, 8/2014 RF Power LDMOS Transistor N-Channel Enhancement-Mode Lateral MOSFET This 28 W asymmetrical Doherty RF power LDMOS transistor is designed for cellular base station applications covering the frequency range of 2496 to

ATC100B471JT200XT

Abstract: EB-38 651AT ATC100B181JT300XT ATC100B4R3CT500XT CDR33BX104AKWY MRFE6VS25N C5750KF1H226ZT Fair-Rite ATC MRFE6VS25NR1
Contextual Info: Freescale Semiconductor Technical Data Document Number: MRFE6VS25N Rev. 0, 6/2012 RF Power LDMOS Transistor High Ruggedness N-Channel Enhancement-Mode Lateral MOSFET MRFE6VS25NR1 RF power transistor designed for both narrowband and broadband ISM, broadcast and aerospace applications operating at frequencies from 1.8 to

Contextual Info: Freescale Semiconductor Technical Data Document Number: MRFE6VS25N Rev. 0, 6/2012 RF Power LDMOS Transistor High Ruggedness N-Channel Enhancement-Mode Lateral MOSFET MRFE6VS25NR1 RF power transistor designed for both narrowband and broadband ISM, broadcast and aerospace applications operating at frequencies from 1.8 to

Contextual Info: Freescale Semiconductor Technical Data Document Number: AFT27S010N Rev. 1, 9/2014 RF Power LDMOS Transistor N-Channel Enhancement-Mode Lateral MOSFET This 1.26 W RF power LDMOS transistor is designed for cellular base station applications covering the frequency range of 728 to 3600 MHz.

Contextual Info: Part Number: Integra IB1012S10 TECHNOLOGIES, INC. Silicon Bipolar − Ultra-high fT L-Band Avionics Transistor Class C Operation − High Efficiency The high power pulsed avionics transistor part number IB1012S10 is designed for L-Band avionics systems operating at 1025 to 1150 MHz. While operating

BFS23A

Abstract: 4312 020 36640
Contextual Info: b5E D PHILIPS INTERNATIONAL m 711002b Ü0b2b27 731 BFS23A ¡PHIN X V.H.F. POWER TRANSISTOR N-P-N epitaxial Planartransistor intended for use in class-A, B and C operated mobile, industrial and military transmitters with a supply voltage o f 28 V. The transistor is resistance stabilized. Every tran­

transistor c655

Abstract: 9225 npn transistor RF NPN POWER TRANSISTOR 3 GHZ 5w transistor power rating 5w TRANSISTOR A52 C655 13MM ATC100A PH2931-5M TT50
Contextual Info: AÚK.CA', M an A M P company Radar Pulsed Power Transistor, 5W, 100|is Pulse, 10% Duty 2.9-3.1 GHz PH2931-5M V2.00 Features • • • • • • • • ortn NPN Silicon Microwave Power Transistor Common Base Configuration Broadband Class C Operation High Efficiency Interdigitated Geometry

Contextual Info: I I N AMER PHILIPS/DISCRETE MAINTENANCE TYPE ObE D bb53131 DDlSDfll 2 PKB3003U T - 3S - O 1 ? MICROWAVE POWER TRANSISTOR NPN silicon transistor intended for use in military and professional applications. It operates in c.w. conditions and is recommended in common-base class-B amplifiers up to 3 GHz.

PKB3003U

Contextual Info: N AMER PHILIPS/DISCRETE MAINTENANCE TYPE ObE D ^ 5 3 ^ 3 1 DD1SDÖ1 2 J PKB3003U T - 33 MICROWAVE POWER TRANSISTOR NPN silicon transistor intended for use in military and professional applications. It operates in c.w. conditions and is recommended in common-base class-B amplifiers up to 3 GHz.

V 518 J19

Abstract: j6812 MRF837 transistor j147 J-6812
Contextual Info: MOTOROLA S E M IC O N D U C T O R TECHNICAL DATA MRF837 The RF Line 750 m W NPN SILICON RF LOW POWER TRANSISTOR . d e sign e d prim arily for w ide b and large s ign al predriver stage s in 800 M H z an d U H F frequency ranges. 870 M H z RF LOW POWER TRANSISTOR

MMBF170

Abstract: BS170 application note BS170 CBVK741B019 F63TNR PN2222N BS170 - J35Z TO 92 BS170 bs170 TO-92
Contextual Info: April 1995 BS170 / MMBF170 N-Channel Enhancement Mode Field Effect Transistor General Description Features High density cell design for low RDS ON . These N-Channel enhancement mode field effect transistors are produced using Fairchild's proprietary, high

CH858BPT

Contextual Info: CHENMKO ENTERPRISE CO.,LTD CH858BPT SURFACE MOUNT PNP General Purpose Transistor VOLTAGE 30 Volts CURRENT 0.1 Ampere APPLICATION * AF input stages and driver applicationon equipment. * Other general purpose applications. FEATURE 3 (2) .055 (1.40) .047 (1.20)

MOSFET bs170

Abstract: BS170 CBVK741B019 F63TNR MMBF170 PN2222N BS170 AN bs170 TO-92 BS170 application note
Contextual Info: April 1995 BS170 / MMBF170 N-Channel Enhancement Mode Field Effect Transistor General Description Features High density cell design for low RDS ON . These N-Channel enhancement mode field effect transistors are produced using Fairchild's proprietary, high

CH858BGP

Contextual Info: CHENMKO ENTERPRISE CO.,LTD CH858BGP SURFACE MOUNT PNP General Purpose Transistor VOLTAGE 30 Volts CURRENT 0.1 Ampere APPLICATION * AF input stages and driver applicationon equipment. * Other general purpose applications. FEATURE 3 (2) .055 (1.40) .047 (1.20)