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    TRANSISTOR IRFP Search Results

    TRANSISTOR IRFP Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    2SC6026MFV
    		Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=50 V / IC=0.15 A / hFE=120~400 / VCE(sat)=0.25 V / SOT-723 Datasheet
    TTC5886A
    		Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=50 V / IC=5 A / hFE=400~1000 / VCE(sat)=0.22 V / tf=120 ns / New PW-Mold Datasheet
    TTA2097
    		Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / VCEO=-50 V / IC=-5 A / hFE=200~500 / VCE(sat)=-0.27 V / tf=60 ns / New PW-Mold Datasheet
    TTA012
    		Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / VCEO=-80 V / IC=-4 A / hFE=100~200 / VCE(sat)=-0.22 V / tf=35 ns / PW-Mini Datasheet
    TPCP8514
    		Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=120 V / IC=3 A / hFE=120~240 / VCE(sat)=0.15 V / tf=170 ns / PS-8 Datasheet

    TRANSISTOR IRFP Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    Contextual Info: IRFP150 Semiconductor Data Sheet July 1999 40A, 100V, 0.055 Ohm, N-Channel Power MOSFET This N-Channel enhancement mode silicon gate power field effect transistor is an advanced power MOSFET designed, tested, and guaranteed to withstand a specified level of


    OCR Scan     		IRFP150 O-247 PDF

    Contextual Info: IRFP240 Semiconductor Data Sheet July 1999 20A, 200V, 0.180 Ohm, N-Channel Power MOSFET This N-Channel enhancement mode silicon gate power field effect transistor is an advanced power MOSFET designed, tested, and guaranteed to withstand a specified level of


    OCR Scan     		IRFP240 O-247 180i2 PDF

    IRFP350

    Abstract: TB334
    Contextual Info: IRFP350 Data Sheet January 2002 16A, 400V, 0.300 Ohm, N-Channel Power MOSFET Features • 16A, 400V This N-Channel enhancement mode silicon gate power field effect transistor is an advanced power MOSFET designed, tested, and guaranteed to withstand a specified level of


    Original     		IRFP350 TA17434. IRFP350 TB334 PDF

    IRFPC40

    Contextual Info: IRFPC40 Data Sheet January 2002 6.8A, 600V, 1.200 Ohm, N-Channel Power MOSFET Features • 6.8A, 600V This N-Channel enhancement mode silicon gate power field effect transistor is an advanced power MOSFET designed, tested, and guaranteed to withstand a specified level of


    Original     		IRFPC40 IRFPC40 PDF

    IRFP250 application

    Abstract: irfp250 application note datasheet irfp250 mosfet IRFP250 irfp250 applications TA9295 TB334
    Contextual Info: IRFP250 Data Sheet January 2002 33A, 200V, 0.085 Ohm, N-Channel Power MOSFET Features • 33A, 200V This N-Channel enhancement mode silicon gate power field effect transistor is an advanced power MOSFET designed, tested, and guaranteed to withstand a specified level of


    Original     		IRFP250 TA9295. IRFP250 application irfp250 application note datasheet irfp250 mosfet IRFP250 irfp250 applications TA9295 TB334 PDF

    application IRFP450

    Abstract: datasheet irfp450 mosfet IRFP450 TA17435 TB334 IRFP45
    Contextual Info: IRFP450 Data Sheet January 2002 14A, 500V, 0.400 Ohm, N-Channel Power MOSFET Features • 14A, 500V This N-Channel enhancement mode silicon gate power field effect transistor is an advanced power MOSFET designed, tested, and guaranteed to withstand a specified level of


    Original     		IRFP450 TA17435. application IRFP450 datasheet irfp450 mosfet IRFP450 TA17435 TB334 IRFP45 PDF

    IRFP350

    Abstract: TB334
    Contextual Info: IRFP350 Data Sheet July 1999 16A, 400V, 0.300 Ohm, N-Channel Power MOSFET Ordering Information PART NUMBER IRFP350 PACKAGE TO-247 2319.4 Features • 16A, 400V This N-Channel enhancement mode silicon gate power field effect transistor is an advanced power MOSFET designed,


    Original     		IRFP350 O-247 IRFP350 TB334 PDF

    Contextual Info: IRFP440 S e m iconductor Data Sheet July 1999 8.8A, 500V, 0.850 Ohm, N-Channel Power MOSFET This N-Channel enhancement mode silicon gate power field effect transistor is an advanced power MOSFET designed, tested, and guaranteed to withstand a specified level of


    OCR Scan     		IRFP440 O-247 PDF

    datasheet irfp460 mosfet

    Abstract: IRFP460 application irfp460 IRFP460 APPLICATION NOTE 5102 mosfet irfp460 data sheet power mosfet 500v 20a circuit TB334 irfp460 dc motor circuit
    Contextual Info: IRFP460 Data Sheet January 2002 20A, 500V, 0.270 Ohm, N-Channel Power MOSFET Features • 20A, 500V This N-Channel enhancement mode silicon gate power field effect transistor is an advanced power MOSFET designed, tested, and guaranteed to withstand a specified level of


    Original     		IRFP460 TA17465. datasheet irfp460 mosfet IRFP460 application irfp460 IRFP460 APPLICATION NOTE 5102 mosfet irfp460 data sheet power mosfet 500v 20a circuit TB334 irfp460 dc motor circuit PDF

    IRFPG40

    Contextual Info: IRFPG40 Data Sheet January 2002 4.3A, 1000V, 3.500 Ohm, N-Channel Power MOSFET Features • 4.3A, 1000V This N-Channel enhancement mode silicon gate power field effect transistor is an advanced power MOSFET designed, tested, and guaranteed to withstand a specified level of


    Original     		IRFPG40 -55oC 150oC IRFPG40 PDF

    switching with IRFP450 schematic

    Abstract: power switching with IRFP450 schematic IRFP450 STE36N50 LD36A GC54800
    Contextual Info: SGS-THOMSON STE36N50 N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR IN ISOTOP PACKAGE TYPE Voss R o S o n to STE36N50 500 V < 0.14 £! 36 A . HIGH CURRENT POWER MODULE . AVALANCHE RUGGED TECHNOLOGY . {SEE IRFP450 FOR RATING) . VERY LARGE SOA - LARGE PEAK POWER


    OCR Scan     		STE36N50 IRFP450 E81743) 100RG 100Rc cc5609 switching with IRFP450 schematic power switching with IRFP450 schematic LD36A GC54800 PDF

    Ultrasonic welding circuit diagram

    Abstract: GC54800
    Contextual Info: SGS-THOMSON STE45N50 N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR IN ISOTOP PACKAGE TYPE V dss RDS on Id STE45N50 500 V < 0 .1 1 Ì2 45 A . HIGH CURRENT POWER MODULE . AVALANCHE RUGGED TECHNOLOGY (SEE IRFP450 FOR RATING) . VERY LARGE SOA - LARGE PEAK POWER


    OCR Scan     		STE45N50 IRFP450 E81743) Ultrasonic welding circuit diagram GC54800 PDF

    irfp440

    Contextual Info: IRFP440 Data Sheet Title FP4 bt 8A, 0V, 50 m, 8.8A, 500V, 0.850 Ohm, N-Channel Power MOSFET Features This N-Channel enhancement mode silicon gate power field effect transistor is an advanced power MOSFET designed, tested, and guaranteed to withstand a specified level of


    Original     		IRFP440 IRFP440 O-247 TB334 PDF

    transistor IRFP250

    Contextual Info: IRFP250 Data Sheet Title FP2 bt A, 0V, 85 m, 33A, 200V, 0.085 Ohm, N-Channel Power MOSFET Features This N-Channel enhancement mode silicon gate power field effect transistor is an advanced power MOSFET designed, tested, and guaranteed to withstand a specified level of


    Original     		IRFP250 TB334 transistor IRFP250 PDF

    application IRFP450

    Contextual Info: IRFP450 Data Sheet Title FP4 bt A, 0V, 00 m, 14A, 500V, 0.400 Ohm, N-Channel Power MOSFET Features This N-Channel enhancement mode silicon gate power field effect transistor is an advanced power MOSFET designed, tested, and guaranteed to withstand a specified level of


    Original     		IRFP450 TB334 application IRFP450 PDF

    IRFP240 transistor

    Contextual Info: IRFP240 Data Sheet Title FP2 bt A, 0V, 80 m, 20A, 200V, 0.180 Ohm, N-Channel Power MOSFET Features This N-Channel enhancement mode silicon gate power field effect transistor is an advanced power MOSFET designed, tested, and guaranteed to withstand a specified level of


    Original     		IRFP240 IRFP240 transistor PDF

    Contextual Info: IRFP350 Data Sheet Title FP3 bt A, 0V, 00 m, 16A, 400V, 0.300 Ohm, N-Channel Power MOSFET Features This N-Channel enhancement mode silicon gate power field effect transistor is an advanced power MOSFET designed, tested, and guaranteed to withstand a specified level of


    Original     		IRFP350 TB334 PDF

    IRFP460 APPLICATION NOTE

    Abstract: IRFP460 application IRFP460 transistor irfp460 dc motor circuit
    Contextual Info: IRFP460 Data Sheet Title FP4 bt A, 0V, 70 m, 20A, 500V, 0.270 Ohm, N-Channel Power MOSFET Features This N-Channel enhancement mode silicon gate power field effect transistor is an advanced power MOSFET designed, tested, and guaranteed to withstand a specified level of


    Original     		IRFP460 IRFP460 APPLICATION NOTE IRFP460 application IRFP460 transistor irfp460 dc motor circuit PDF

    Contextual Info: IRFP140 S em iconductor D ata S h eet Ju ly 1999 31 A, 100V, 0.077 Ohm, N-Channel Power MOSFET This N-Channel enhancement mode silicon gate power field effect transistor is an advanced power MOSFET designed, tested, and guaranteed to withstand a specified level of


    OCR Scan     		IRFP140 O-247 PDF

    IRFP250

    Abstract: d881 transistor IRFP250 D88FN2
    Contextual Info: F U IRFP250.251 P88FN2.M2 ? 30 AMPERES 200,150 VQLTS r DS ON = 0.085 n HELD EFFECT POWER TRANSISTOR This series of N -C hannel Enhancem ent-m ode Power MOSFETs utilizes GE’s advanced Power DMOS technology to achieve low on-resistance with excellent device rugged­


    OCR Scan     		IRFP250 D88FN2 50VQLTS 0-08S 00A//US, IRFP251/D88FM2 IRFP250/D88FN2 d881 transistor IRFP250 PDF

    IRFP452

    Abstract: IRFP453 Scans-00102310 GE 048 TRANSISTOR
    Contextual Info: IRFP452,453 [F U F 12 AMPERES 500, 450 VOLTS RDS ON =0.5 n RELD EFFECT POWER TRANSISTOR This series of N-Channel Enhancement-mode Power MOSFETs utilizes GE’s advanced Power DMOS technology to achieve low on-resistance with excellent device rugged­ ness and reliability.


    OCR Scan     		00A///sec, IRFP452 IRFP453 Scans-00102310 GE 048 TRANSISTOR PDF

    Contextual Info: IRFPG40 Semiconductor D ata S h eet Ju ly 1999 4.3A, 1000V, 3.500 Ohm, N-Channel Power MOSFET F ile N u m b er 2879.2 Features • 4.3A, 1000V This N-Channel enhancement mode silicon gate power field effect transistor is an advanced power MOSFET designed,


    OCR Scan     		IRFPG40 PDF

    IRFP152

    Abstract: IRFP153
    Contextual Info: [MMiRi-lMS [FUT FIELD EFFECT POWER TRANSISTOR IRFP152,153 33 AMPERES 100, 60 VOLTS RqS ON = 0-08 Cl This series of N -C hannel Enhancem ent-m ode Power MOSFETs utilizes GE’s advanced Power DMOS technology to achieve low on-resistance with excellent device rugged­


    OCR Scan     		IRFP152 260MA, IRFP153 PDF

    IRFP252

    Abstract: IRFP253
    Contextual Info: P@«Wn^=lMiS@ FIT IRFP252,253 25 AMPERES 200,150 VOLTS r d s ( o n = 0.12 n FIELD EFFECT POWER TRANSISTOR This series of N -C hannel Enhancem ent-m ode Power MOSFETs utilizes GE’s advanced Power DMOS technology to achieve low on-resistance with excellent device rugged­


    OCR Scan     		IRFP252 00A//JS, RDS10N1 IRFP253 PDF