TRANSISTOR IB 1A NPN Search Results

2SC5249

Abstract: FM20 NPN Transistor 600V 0,2A vbe 12v, vce 600v NPN Transistor
Contextual Info: 2SC5249 Silicon NPN Triple Diffused Planar Transistor High Voltage Switchihg Transistor A IB 1.5 PC 35(Tc=25°C) Tj Tstg µA 600min V hFE VCE=4V, IC=1A 20 to 40 A VCE(sat) IC=1A, IB=0.2A 0.5max W VBE(sat) IC=1A, IB=0.2A 1.2max V 150 °C fT VCE=12V, IE=–0.3A

2SC5249

Abstract: FM20
Contextual Info: 2SC5249 Silicon NPN Triple Diffused Planar Transistor High Voltage Switchihg Transistor A IB 1.5 PC 35(Tc=25°C) Tj Tstg µA 600min V hFE VCE=4V, IC=1A 20 to 40 A VCE(sat) IC=1A, IB=0.2A 0.5max W VBE(sat) IC=1A, IB=0.2A 1.2max V 150 °C fT VCE=12V, IE=–0.3A

2SC3678

Contextual Info: 2SC3678 Silicon NPN Triple Diffused Planar Transistor High Voltage Switching Transistor µA V IEBO VEB=7V 100max µA 7 V V(BR)CEO IC=10mA 800min V 3(Pulse6) A hFE VCE=4V, IC=1A 10 to 30 IB 1.5 A VCE(sat) IC=1A, IB=0.2A 0.5max PC 80(Tc=25°C) W VBE(sat) IC=1A, IB=0.2A

2SC4299

Contextual Info: 2SC4299 Silicon NPN Triple Diffused Planar Transistor High Voltage Switchihg Transistor Unit VCB=800V 100max µA VCEO 800 V IEBO VEB=7V 100max µA 7 V V(BR)CEO IC=10mA 800min V 3(Pulse6) A hFE VCE=4V, IC=1A 10 to 30 IB 1.5 A VCE(sat) IC=1A, IB=0.2A 0.5max

2SC4299

Contextual Info: 2SC4299 Silicon NPN Triple Diffused Planar Transistor High Voltage Switchihg Transistor Unit VCB=800V 100max µA VCEO 800 V IEBO VEB=7V 100max µA 7 V V(BR)CEO IC=10mA 800min V 3(Pulse6) A hFE VCE=4V, IC=1A 10 to 30 IB 1.5 A VCE(sat) IC=1A, IB=0.2A 0.5max

2SC5239

Contextual Info: 2SC5239 Silicon NPN Triple Diffused Planar Transistor High Voltage Switchihg Transistor 100max µA V IEBO VEB=7V 100max µA 7 V V(BR)CEO IC=10mA 550min V 3(Pulse6) A hFE VCE=4V, IC=1A 10 to 30 550 VEBO IB 1.5 A VCE(sat) IC=1A, IB=0.2A 0.5max PC 50(Tc=25°C)

2SC4557

Contextual Info: 2SC4557 Silicon NPN Triple Diffused Planar Transistor High Voltage Switchihg Transistor Unit VCB=800V 100max µA VCEO 550 V IEBO VEB=7V 100max µA 7 V V(BR)CEO V 10(Pulse20) A hFE V 5 A VCE(sat) IC=5A, IB=1A 0.5max PC 80(Tc=25°C) W VBE(sat) IC=5A, IB=1A

Contextual Info: 2SC3678 Silicon NPN Triple Diffused Planar Transistor High Voltage Switching Transistor µA V IEBO VEB=7V 100max µA V 7 V V(BR)CEO IC=10mA 800min IC 3(Pulse6) A hFE VCE=4V, IC=1A 10 to 30 IB 1.5 A VCE(sat) IC=1A, IB=0.2A 0.5max PC 80(Tc=25°C) W VBE(sat)

2SD2583

Abstract: Audio Output Transistor Amplifier transistor Ic 1A datasheet NPN
Contextual Info: isc Product Specification INCHANGE Semiconductor isc Silicon NPN Power Transistor 2SD2583 DESCRIPTION •High Collector Current-IC= 5A ·Low Saturation Voltage : VCE sat = 0.15V(Max)@ IC=1A, IB= 50mA ·High DC Current Gain: hFE= 150~600@ IC= 1A APPLICATIONS

D2150

Abstract: D2150 s BTD2150A3 NPN transistor ECB TO-92 500ma 1A
Contextual Info: CYStech Electronics Corp. Spec. No. : C848A3 Issued Date : 2005.02.04 Revised Date :2005.06.03 Page No. : 1/5 Low Vcesat NPN Epitaxial Planar Transistor BTD2150A3 Features • Low VCE sat , typically 0.25V at IC / IB = 2A / 100mA 0.1V at IC / IB = 1A / 50mA

D2150

Abstract: NPN transistor ECB TO-92 PT10m BTD2150A3
Contextual Info: CYStech Electronics Corp. Spec. No. : C848A3 Issued Date : 2005.02.04 Revised Date :2006.03.14 Page No. : 1/6 Low Vcesat NPN Epitaxial Planar Transistor BTD2150A3 Features • Low VCE sat , typically 0.25V at IC / IB = 2A / 100mA 0.1V at IC / IB = 1A / 50mA

2SD2557

Abstract: TEA1
Contextual Info: Equivalent circuit 2SD2557 Silicon NPN Triple Diffused Planar Transistor Unit VCB=200V 100max µA VCEO 200 V IEBO VEB=6V 5max mA VEBO 6 V V BR CEO IC 5 A hFE IC=10mA 200min VCE=5V, IC=1A 1500 to 6500 V a 4.8±0.2 2.0±0.1 ø3.2±0.1 b IB 2 A VCE(sat) IC=1A, IB=5mA

2SD2557

Contextual Info: Equivalent circuit 2SD2557 Silicon NPN Triple Diffused Planar Transistor Unit VCB=200V 100max µA VCEO 200 V IEBO VEB=6V 5max mA VEBO 6 V V BR CEO IC 5 A hFE IC=10mA 200min VCE=5V, IC=1A 1500 to 6500 V a 4.8±0.2 2.0±0.1 ø3.2±0.1 b IB 2 A VCE(sat) IC=1A, IB=5mA

2SD1858

Abstract: 2SB1132 2SB1237 2SD1664
Contextual Info: Transistors Medium Power Transistor 32V, 1A 2SD1664 / 2SD1858 FFeatures 1) Low VCE(sat), VCE(sat) = 0.15V (typical). (IC / IB = 500mA / 50mA) 2) Complements the 2SB1132 / 2SB1237. FExternal dimensions (Units: mm) FStructure Epitaxial planar type NPN silicon transistor

2SC3831

Abstract: vbe 12v, vce 600v NPN Transistor transistor npn 12V 1A Collector Current
Contextual Info: 2SC3831 Silicon NPN Triple Diffused Planar Transistor High Voltage and High Speed Switching Transistor VCB=600V VCEO 500 V IEBO VEB=10V 10 V V(BR)CEO 10(Pulse20) A hFE mA 100max µA IC=25mA 500min V VCE=4V, IC=5A 10 to 30 IB 4 A VCE(sat) IC=5A, IB=1A 0.5max

vbe 12v, vce 600v NPN Transistor

Abstract: 2SC3831
Contextual Info: 2SC3831 Silicon NPN Triple Diffused Planar Transistor High Voltage and High Speed Switching Transistor 1max mA VCEO 500 V IEBO VEB=10V 100max µA 10 V V(BR)CEO IC=25mA 500min V 10(Pulse20) A hFE VCE=4V, IC=5A 10 to 30 IB 4 A VCE(sat) IC=5A, IB=1A 0.5max

2SC4672

Abstract: R208 transistor 2SC4672
Contextual Info: UNISONIC TECHNOLOGIES CO., LTD 2SC4672 NPN SILICON TRANSISTOR LOW FREQUENCY TRANSISTOR 50V,2A „ DESCRIPTION The UTC 2SC4672 is a low frequency transistor. Excellent DC current gain characteristics. „ FEATURES *Low Saturation Voltage, Typically VCE(SAT)=0.1V at IC / IB=1A / 50mA

2Sc4672

Contextual Info: UNISONIC TECHNOLOGIES CO., LTD 2SC4672 NPN SILICON TRANSISTOR LOW FREQUENCY TRANSISTOR 50V,2A „ DESCRIPTION The UTC 2SC4672 is a low frequency transistor. Excellent DC current gain characteristics. „ FEATURES *Low Saturation Voltage, Typically VCE(SAT)=0.1V at IC / IB=1A / 50mA

Contextual Info: UNISONIC TECHNOLOGIES CO., LTD 2SC4672 NPN SILICON TRANSISTOR LOW FREQUENCY TRANSISTOR 50V,2A  DESCRIPTION The UTC 2SC4672 is a low frequency transistor. Excellent DC current gain characteristics.  FEATURES *Low Saturation Voltage, Typically VCE(SAT)=0.1V at IC / IB=1A / 50mA

TRANSISTOR L 043 A

Abstract: diode 400v 0.5a TSC5301D transistor case To 92 NPN Transistor 1A 400V
Contextual Info: TSC5301D High Voltage NPN Transistor with Diode TO-92 PRODUCT SUMMARY Pin Definition: 1. Emitter 2. Collector 3. Base BVCEO 400V BVCBO 700V IC VCE SAT Features ● 1A 1.1V @ IC / IB = 1A / 0.25A Block Diagram Build-in Free-wheeling Diode Makes Efficient Anti-saturation

NPN Transistor 1A 400V

Abstract: e07 mARking NPN transistor NPN TO92 400V transistor case To 92 "NPN Transistor"
Contextual Info: TSC5301D High Voltage NPN Transistor with Diode TO-92 PRODUCT SUMMARY Pin Definition: 1. Emitter 2. Collector 3. Base BVCEO 400V BVCBO 700V IC VCE SAT Features ● 1A 1.1V @ IC / IB = 1A / 0.25A Block Diagram Build-in Free-wheeling Diode Makes Efficient Anti-saturation

Contextual Info: TSC5301D High Voltage NPN Transistor with Diode TO-92 PRODUCT SUMMARY Pin Definition: 1. Emitter 2. Collector 3. Base BVCEO 400V BVCBO 700V IC VCE SAT Features  1A 1.1V @ IC / IB = 1A / 0.25A Block Diagram Build-in Free-wheeling Diode Makes Efficient Anti-saturation

N1053

Abstract: BTN1053L3 BTN1053
Contextual Info: CYStech Electronics Corp. Spec. No. : C818L3 Issued Date : 2003.08.13 Revised Date : Page No. : 1/5 NPN Epitaxial Planar Transistor BTN1053L3 Features • 5W power dissipation • Excellent HFE Characteristics up to 1A • Low Saturation Voltage VCE sat =0.15V(typ)(IC=1A,IB=50mA).

D 92 M 03 DIODE

Abstract: NPN Transistor 1A 400V TSC5301D "NPN Transistor"
Contextual Info: TSC5301D High Voltage NPN Transistor with Diode TO-92 PRODUCT SUMMARY Pin Definition: 1. Base 2. Collector 3. Emitter BVCEO 400V BVCBO 700V IC VCE SAT Features ● 1A 1.1V @ IC / IB = 1A / 0.25A Block Diagram Build-in Free-wheeling Diode Makes Efficient Anti-saturation