TRANSISTOR HFE 400 1W TO 92 Search Results

200 watt audio ic

Abstract: KSA928A-Y transistor HFE 400 1w
Contextual Info: KSA928A KSA928A Audio Power Amplifier • Complement to KSC2328A • Collector Power Dissipation : PC=1W • 3 Watt Output Application TO-92L 1 1. Emitter 2. Collector 3. Base PNP Epitaxial Silicon Transistor Absolute Maximum Ratings Ta=25°C unless otherwise noted

transistor HFE 400 1w

Contextual Info: KSC2328A KSC2328A Audio Power Amplifier Applications • Complement to KSA928A • Collector Power Dissipation : PC=1W • 3 Watt Output Application TO-92L 1 1. Emitter 2. Collector 3. Base NPN Epitaxial Silicon Transistor Absolute Maximum Ratings Ta=25°C unless otherwise noted

transistor HFE 400 1w

Abstract: KSA931
Contextual Info: KSA931 KSA931 Low Frequency Amplifier & Medium Speed Switching • Complement to KSC2331 • Collector-Base Voltage : VCBO= -80V • Collector Power Dissipation : PC=1W TO-92L 1 1. Emitter 2. Collector 3. Base PNP Epitaxial Silicon Transistor Absolute Maximum Ratings Ta=25°C unless otherwise noted

2SD1966

Abstract: 2SD1255M 2SB maintenance IMB6 2SC2808
Contextual Info: h -7 > y 7, $ /Transistors h z 7 > y Z $ $ H n h —W h 7 > y ^ ^ i p n — f t ü / T r a n s is t o r s Summary • h 7 v 3. $ /Transistors 2SA/2SB/2SC/2SC/2SD Type V ceo (V ) fT(M H z) Cob(pF) hFE Package Page 6.5 82-390 FTR 75 Icm - 1 .5 A 300 200 5.5

alternator diode 1776 B

Abstract: 2az marking transistor sot-23 SMD SOT23 transistor MARK Y2 ic mb4213 NEC 12F triac F10P048 ktc3114 equivalent SMD TRANSISTOR MARKING 02N DIODE PJ 57 ss14 BC517 equivalent
Contextual Info: Transistors Transistors Diodes Diodes Thyristors Thyristors SAW SAW Device Device Dielectric Dielectric Device Device Integrated Integrated Circuit Circuit Table of Contents Index 5 SMD Transistors Line-up PNP Transistors Transistors Line-up (NPN Transistors)

QM5HL-24

Abstract: 2sk2850 transistor qm5hl 2SK2850 transistor pnp 600v. 1a. to 92 QM5HL24 MG20G6EL1 600V PNP pnp transistor 600V NPN Transistor 600V
Contextual Info: Next W M.T O .C Semiconductors00-YDiscretes W 1 M.T . O W C W WW .100Y. M.T O W .C ZTX~Series Transistors .TW W product Detailed Ware available on: us. 100y. com. tw W 00Y specifications 1 M.T . M O W O C . .C WW .1Pol00YIc max Part No. Product No. Manufacturer

KSA928A

Abstract: KSC2328A
Contextual Info: KSC2328A KSC2328A Audio Power Amplifier Applications • Complement to KSA928A • Collector Dissipation : PC=1W • 3 Watt Output Application TO-92L 1 1. Emitter 2. Collector 3. Base NPN Epitaxial Silicon Transistor Absolute Maximum Ratings Ta=25°C unless otherwise noted

KSA928A

Abstract: KSC2328A
Contextual Info: KSA928A KSA928A Audio Power Amplifier • Complement to KSC2328A • Collector Dissipation : PC=1W • 3 Watt Output Application TO-92L 1 1. Emitter 2. Collector 3. Base PNP Epitaxial Silicon Transistor Absolute Maximum Ratings Ta=25°C unless otherwise noted

KSA928A

Abstract: KSC2328A
Contextual Info: KSC2328A KSC2328A Audio Power Amplifier Applications • Complement to KSA928A • Collector Power Dissipation : PC=1W • 3 Watt Output Application TO-92L 1 1. Emitter 2. Collector 3. Base NPN Epitaxial Silicon Transistor Absolute Maximum Ratings Ta=25°C unless otherwise noted

KSA928A

Abstract: KSC2328A KSC2328
Contextual Info: KSC2328A KSC2328A Audio Power Amplifier Applications • Complement to KSA928A • Collector Power Dissipation : PC=1W • 3 Watt Output Application TO-92L 1 1. Emitter 2. Collector 3. Base NPN Epitaxial Silicon Transistor Absolute Maximum Ratings Ta=25°C unless otherwise noted

KSA928A

Abstract: KSC2328A 5000 watt audio amplifier
Contextual Info: KSA928A KSA928A Audio Power Amplifier • Complement to KSC2328A • Collector Power Dissipation : PC=1W • 3 Watt Output Application TO-92L 1 1. Emitter 2. Collector 3. Base PNP Epitaxial Silicon Transistor Absolute Maximum Ratings Ta=25°C unless otherwise noted

KSA928A

Abstract: KSC2328A
Contextual Info: KSA928A KSA928A Audio Power Amplifier • Complement to KSC2328A • Collector Power Dissipation : PC=1W • 3 Watt Output Application TO-92L 1 1. Emitter 2. Collector 3. Base PNP Epitaxial Silicon Transistor Absolute Maximum Ratings Ta=25°C unless otherwise noted

KSA928A

Abstract: KSC2328A
Contextual Info: KSA928A KSA928A Audio Power Amplifier • Complement to KSC2328A • Collector Power Dissipation : PC=1W • 3 Watt Output Application TO-92L 1 1. Emitter 2. Collector 3. Base PNP Epitaxial Silicon Transistor Absolute Maximum Ratings Ta=25°C unless otherwise noted

KSA931

Abstract: KSC2331 PW350
Contextual Info: KSA931 KSA931 Low Frequency Amplifier & Medium Speed Switching • Complement to KSC2331 • Collector-Base Voltage : VCBO= -80V • Collector Dissipation : PC=1W TO-92L 1 1. Emitter 2. Collector 3. Base PNP Epitaxial Silicon Transistor Absolute Maximum Ratings Ta=25°C unless otherwise noted

Contextual Info: KSA931 KSA931 Low Frequency Amplifier & Medium Speed Switching • Complement to KSC2331 • Collector-Base Voltage : VCBO= -80V • Collector Power Dissipation : PC=1W TO-92L 1 1. Emitter 2. Collector 3. Base PNP Epitaxial Silicon Transistor Absolute Maximum Ratings Ta=25°C unless otherwise noted

KSA931

Abstract: KSC2331
Contextual Info: KSA931 KSA931 Low Frequency Amplifier & Medium Speed Switching • Complement to KSC2331 • Collector-Base Voltage : VCBO= -80V • Collector Power Dissipation : PC=1W TO-92L 1 1. Emitter 2. Collector 3. Base PNP Epitaxial Silicon Transistor Absolute Maximum Ratings Ta=25°C unless otherwise noted

MN1280

Abstract: KGT50N60kda bc547 smd transistor kia1117af transistor smd zG y6 smd transistor MB4213 y4 smd transistor smd transistor zaa KGT25N120NDA
Contextual Info: Table of Contents SMD THD ▣ Table of Contents 2 ▣ Bipolar Junction Transistor 4 Transistor Line-up PNP Transistor Transistor Line-up (NPN Transistor) Small Signal General Purpose Transistor Current Regulating Device Small Signal Low Noise Transistor

1N5761

Abstract: toroid FT10 BUL45G BUL45 marking code t1a MUR150 MJE210 MPF930 MTP12N10 MTP8P10
Contextual Info: BUL45G NPN Silicon Power Transistor High Voltage SWITCHMODEt Series Designed for use in electronic ballast light ballast and in Switchmode Power supplies up to 50 Watts. Features • Improved Efficiency Due to: Low Base Drive Requirements (High and Flat DC Current Gain hFE)

1N5761

Abstract: marking code t1a BUL45 BUL45G MJE210 MPF930 MTP12N10 MTP8P10 MUR105 MUR150
Contextual Info: BUL45 NPN Silicon Power Transistor High Voltage SWITCHMODEt Series Designed for use in electronic ballast light ballast and in Switchmode Power supplies up to 50 Watts. Features • Improved Efficiency Due to: ♦ Low Base Drive Requirements (High and Flat DC Current Gain hFE)

BZX85C12V

Abstract: TOSHIBA 2N3055 bta41-600b application BTA41-600B firing circuit TAB 429 H toshiba BZX85C20V SCR tyn612 pin configuration picaxe TYN612 specification 2SA1085E
Contextual Info: SEMICONDUCTORS DISCRETE DEVICES Cathode Anode DO-15 DO-201AD 6.8 x 3.5mm 9.5 x 5.3mm Anode Cathode TO-220AC Fast recovery diodes page 427 Schottky power diodes page 428 Isolated tab triacs page 430 Anode 1 Gate Anode 2 Bridge rectifiers Current regulating diodes

Contextual Info: MICROSEMI CORP/ WATERTOlilN WT'iba 00124^ 5DE D POWER DARLINGTONS JAN, JAN, JAN, JAN, 5 Amp, 150V, NPN JANTX JANTX JANTX JANTX 07b & JANTXV & JANTXV & JANTXV & JANTXV IUNIT 2N6350 2N6351 2N6352 2N6353 /FEATURES DESCRIPTION • • • • Unitrode NPN Darltngtons consist of a

2SA1619

Abstract: 2SA1619A 2SC4208 2SC4208A transistor HFE 400 1w
Contextual Info: Transistor 2SC4208, 2SC4208A Silicon NPN epitaxial planer type For low-frequency output amplification and driver amplification Complementary to 2SA1619 and 2SA1619A Unit: mm 5.0±0.2 4.0±0.2 • Absolute Maximum Ratings Parameter Ta=25˚C Symbol Collector to

DG40B

Abstract: DY TRANSISTOR PN918
Contextual Info: u c t or" PN918 C MMBT918 TO-92 SOT-23 B M ark: 3B NPN RF Transistor This device is designed for use as RF amplifiers, oscillators and multipliers with collector currents in the 1.0 mA to 30 mA range. Sourced from Process 43. A b s o lu t e M a x im u m R

smd transistor k 1540

Abstract: 703 TRANSISTOR smd transistor 835 transister transister smd DRF1401 NPN medium power transistor in a smd SiGe POWER TRANSISTOR SMD transister smd transistor js
Contextual Info: UHF POWER TRANSISTOR DRF1401 NPN SiGe RF TRANSISTOR The DRF1401 is a low cost, NPN medium power SiGe HBT Hetero-Junction Bipolar Transistor encapsulated in a plastic SOT-223 SMD package. The DRF1401 can be used as a driver device or an output device, depending on the specific application.