TRANSISTOR H 949 Search Results

BFR96S

Abstract: 6852 d TRANSISTOR lc 945 p transistor BFr96s philips bfr96s scattering lc 945 p transistor NPN transistor a 1707 lc 945 transistor B 557 PNP TRANSISTOR transistor B 764
Contextual Info: Prod uct specification Philips S em iconductors -T < S /'2 - 3 c NPN 5 GHz wideband transistor HILIPS INTERNATIONAL DESCRIPTION 5LE 711002b BFR96S 0043704 253 H P H I N PINNING NPN transistor in a plastic SOT37 envelope primarily intended for MATV applications. The device

LA 7693

Abstract: ic CD 4047 7737 transistor
Contextual Info: DATA SHEET NEC SILICON TRANSISTOR 2SC5014 HIGH FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR 4 PINS SUPER MINI MOLD FEATURES • S m a ll P acka ge • H igh G ain B a n d w id th P ro d u c t fr = 12 G H z T Y P . • Lo w N oise, H igh G ain

BLX14

Abstract: philips Fxc 3 b philips blx14 transistor EP 430 toroid LA Toroid International AB ES28 transistor application VCE28 neutralization push-pull
Contextual Info: m b5E D 711DöSb DQb3H50 430 • PHIN BLX14 PHILIPS INTERNATIONAL J V . H.F./V.H.F. POWER TRANSISTOR N-P-N silicon planar epitaxial transistor for use in class-A, A B and B operated transmitting equipment in the h.f. and v.h.f. band. • rated for 50 W P.E.P. at 1,6 M H z to 28 M H z

lc 945 p transistor NPN

Abstract: BFR96S
Contextual Info: hhS3R31 D031A15 756 H A P X Philips Semiconductors Product specification NPN 5 GHz wideband transistor BFR96S N AUER PHILIPS/DISCRETE DESCRIPTION hRE T> PINNING NPN transistor in a plastic SOT37 envelope primarily intended for MATV applications. The device

GT45F122

Abstract: gt30g122 gt30f122 gt45f123 GT45f122 Series gt35j321 GT45G122 gt60n323 *45F122 GT45F124
Contextual Info: 2008-3 PRODUCT GUIDE Discrete IGBTs s e m i c o n d u c t o r h t tp://w w w.semico n .to shib a .co.jp /en g 1 Features and Structure IGBT: Insulated Gate Bipolar Transistor IGBTs combine the MOSFET advantage of high input impedance with the bipolar transistor

Contextual Info: HN3C17FU TOSHIBA TENTATIVE TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE HN3C17FU Unit in mm V H F -U H F LOW NOISE AMPLIFIER APPLICATIONS 2-1 + 0.1 CHIP : fT = 16GHz series • Low Noise Figure : N F=1.3dB (f=2GHz) • High Gain : |S2l e|2 = 9-0dB (f=2GHz)

HN3C17FU

Contextual Info: TOSHIBA HN3C17FU TENTATIVE TO SHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE HN3C17FU V H F -U H F LO W NOISE AMPLIFIER APPLICATIONS CHIP : fT = 16GHz series • Low Noise Figure : NF = 1.3dB (f=2GHz) • High Gain : |S2l e|2= 9.0dB (f=2GHz) M A X IM U M RATINGS (Ta = 25°C)

2SC 968 NPN Transistor

Contextual Info: DATA SHEET NEC SILICON TRANSISTOR 2SC5007 NPN SILICON EPITAXIAL TRANSISTOR 3 PINS ULTRA SUPER MINI MOLD DESCRIPTION T h e 2 S C 5 0 0 7 is an NPN e p ita x ia l silico n tra n s is to r d e s ig n e d fo r use in lo w no ise and sm a ll sig n a l a m p lifie rs from

d634

Abstract: d633 634 transistor 2SD63 2SD633 d635 ltyj WE VQE 11 E WE VQE 24 E 2SD634
Contextual Info: 2s d 633 s /' J j y N P N = s m * w ? - 1j y h y ^ y v ? •SILICON NPN TRIPLE DIFFUSED MESA DARLINGTON TRANSISTOR 2 S D 634 2s d O X % t> X 4 O '' y o Power o Hammer • H igh 635 7 > 7 — F 7 -t 7’ , Sw itching D rive, P ulse DC C u r r e n t Low C ollector

Contextual Info: D • SbMEEm MA42140 Series Description □ □ □ 1 4 4 fl m/a-com T H MIC \ Silicon Low Noise Bipolar Transistor t 31-17 sem icondtBrlngton - Nominal fT - 4.5 GHz Nominal Current Range - 1 to 10 mA Ip Max. - 50 mA Frequency Range - 300 MHz to 2.0 GHz Geometry - 63

702 TRANSISTOR

Abstract: HA 12058 706 TRANSISTOR sot-23 540 w 03 oj 3E-015 0 261 S04 663
Contextual Info: NPN SILICON HIGH FREQUENCY TRANSISTOR NE680 SERIES FEATURES • HIGH GAIN BANDW IDTH PRO DU CT: fT = 10 GHz • LOW NOISE FIG URE: 1.7 dB at 2 GHz 2.6 dB at 4 GHz • HIG H ASSO C IA TED GAIN: 12.5 dB at 2 GHz 8.0 dB at 4 GHz • EXCELLENT LOW VO LTAG E LOW C U R R EN T PERFO RM AN CE

tl4941

Abstract: tl494 mosfet converter ic tl494 mosfet ic tl494 mosfet TL494 tl494 converter converter ic tl494 transistor tl494 tl494 design buz271
Contextual Info: Design Note 32 Issue 1 April 1996 A High Efficiency Constant Current Source for Battery Charging Applications FZT 949 68µH 2A 1k 2N3904 68µH 1N4148 OUTPUT 680R 1/2W 8 11 Vcc=20V +/-4V C1 C2 1000µF 40V 12 47k Comp 3 -ve 2 SB 340 Vcc CT 5 RT 6 1000µF 35V

AN1001

Contextual Info: PD - 94976 IRF730APbF SMPS MOSFET HEXFET Power MOSFET Applications l Switch Mode Power Supply SMPS l Uninterruptable Power Supply l High speed power switching l Lead-Free Benefits Low Gate Charge Qg results in Simple Drive Requirement l Improved Gate, Avalanche and dynamic

Contextual Info: 35 Royal Road • Flemington, NJ 08822-6000 t 908-806-9400 • f 908-806-9490 • www.altechcorp.com The following is preliminary data. Items available to order. Current stock is limited. Contact Altech for lead times. 35 Royal Road • Flemington, NJ 08822-6000

0/52629-001 dc

Contextual Info: 35 Royal Road • Flemington, NJ 08822-6000 t 908-806-9400 • f 908-806-9490 • www.altechcorp.com The following is preliminary data. Items available to order. Current stock is limited. Contact Altech for lead times. 35 Royal Road • Flemington, NJ 08822-6000

Contextual Info: Ordering number : EN 949B 2SC3038 N0.949B NPN Triple Diffused Planar Silicon Transistor 400V/4A Switching Regulator Applications Features . High breakdown voltage VQBQ^500V . Fast switching speed. . Wide ASO. Absolute Hazimn Ratings at Ta=25 C Collector-to-Base Voltage

Contextual Info: PD - 94976 IRF730APbF SMPS MOSFET HEXFET Power MOSFET Applications l Switch Mode Power Supply SMPS l Uninterruptable Power Supply l High speed power switching l Lead-Free Benefits Low Gate Charge Qg results in Simple Drive Requirement l Improved Gate, Avalanche and dynamic

Contextual Info: Standard Products ACT5101-1 Brushless DC Motor Drive High Voltage 3-Phase www.aeroflex.com/Power May 4, 2005 FEATURES ❑ ❑ ❑ ❑ ❑ ❑ ❑ ❑ ❑ ❑ 500VDC Rating 50Amp DC Rating Package Size 3.0" x 2.1" x 0.39" 4 Quadrant Control 6 Step Trapezoidal Drive Capability

wiring diagram brushless AC motor

Abstract: helicopter construction ACT5101-1 fast recovery 50amp flyback xfmr solar converter dc to dc diagram 25KW igbt 500V 2A
Contextual Info: Standard Products ACT5101-1 Brushless DC Motor Drive High Voltage 3-Phase www.aeroflex.com/Power March 29, 2006 FEATURES ❑ ❑ ❑ ❑ ❑ ❑ ❑ ❑ ❑ ❑ 500VDC Rating 50Amp DC Rating Package Size 3.0" x 2.1" x 0.39" 4 Quadrant Control 6 Step Trapezoidal Drive Capability

035H

Abstract: IRFPE30
Contextual Info: PD - 94923 IRG4PC30UPbF UltraFast Speed IGBT INSULATED GATE BIPOLAR TRANSISTOR Features C • UltraFast: Optimized for high operating frequencies 8-40 kHz in hard switching, >200 kHz in resonant mode • Generation 4 IGBT design provides tighter parameter distribution and higher efficiency than

mj 340

Abstract: 035H IRFPE30
Contextual Info: PD -94920 IRG4PC30FPbF Fast Speed IGBT INSULATED GATE BIPOLAR TRANSISTOR Features C • Fast: Optimized for medium operating frequencies 1-5 kHz in hard switching, >20 kHz in resonant mode . • Generation 4 IGBT design provides tighter parameter distribution and higher efficiency than

irf 44 n

Abstract: 035H IRFPE30 IRGPC30K IRGPC30M
Contextual Info: PD - 94921 IRG4PC30KPbF Short Circuit Rated UltraFast IGBT INSULATED GATE BIPOLAR TRANSISTOR Features • High short circuit rating optimized for motor control, tsc =10µs, @360V VCE start , TJ = 125°C, VGE = 15V • Combines low conduction losses with high

NEC 10F triac

Abstract: TLP250 MOSFET DRIVER p421f p421 coupler P181 Photocoupler tlp3065 TLP3083 TLP520 TLP250 MOSFET DRIVER application note 5252 F 4-pin
Contextual Info: 2008-3 PRODUCT GUIDE Photocouplers and Photorelays s e m i c o n d u c t o r h t tp://w w w.semico n .to shib a .co.jp /en g 1 Product Index Part Number Package Output Page TLP102 TLP106 TLP112 TLP112A TLP113 TLP114A TLP114A IGM TLP115 TLP115A TLP116 TLP117

BLX92A

Abstract: BLX92 em 179 sfe 5,5 ma IEC134 transistor IR 944
Contextual Info: PHILIPS INTERNATIONAL HIE D E3 TllOfiEb 0027Ö37 G E3P HI N BLX92A M A IN T E N A N C E T Y P E U.H.F. POWER TRANSISTOR N-P-N silicon planar epitaxial transistor intended for transmitting applications in class-A, B o r C with a supply voltage up to 28 V. The transistor is resistance stabilized and is guaranteed to withstand severe