TRANSISTOR GE 44 Search Results

sot231a

Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET ge M3D102 PBSS5140U 40 V low VCEsat PNP transistor Product specification Supersedes data of 2001 Mar 27 2001 Jul 20 Philips Semiconductors Product specification 40 V low VCEsat PNP transistor PBSS5140U FEATURES QUICK REFERENCE DATA

TRANSISTOR GB 558

Contextual Info: DATA SHEET NEC SILICON TRANSISTOR 2SC5013 HIGH FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR 4 PINS SUPER MINI MOLD FEATURES PACKAGE DIMENSIONS • S m a ll P acka ge • H igh G ain B a n d w id th P ro d u c t fr = 10 G H z T Y P . •

2SC5012-T1

Contextual Info: DATA SHEET NEC SILICON TRANSISTOR 2SC5012 HIGH FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR 4 PINS SUPER MINI MOLD FEATURES PACKAGE DIMENSIONS • S m a ll P acka ge • H igh G ain B a n d w id th P ro d u c t ft- = 9 G H z T Y P . •

UltraFast 5-40 kHz

Contextual Info: PD -91750 International Rectifier IÖR IRG4IBC20FD PRELIMINARY Fast CoPack IGBT INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features • • • • V ery Low 1.66V vota ge drop 2.5kV, 60s insulation voltage 4.8 mm creapage distance to heatsink

Contextual Info: PD -91750 International M R Rectifier IRG4IBC20FD PRELIMINARY Fast CoPack IGBT INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features • • • • V ery Low 1.66V vota ge drop 2.5kV, 60s insulation voltage 4.8 mm creapage distance to heatsink

tsc 894 transistor

Abstract: mosfet 600V 30A c894
Contextual Info: kitemational logRectifier P D - 9.1034 IRGPC50K Short Circuit Rated UltraFast IGBT INSULATED GATE BIPOLAR TRANSISTOR Features : j • Short circuit rated - 10ps @ 125°C, V ge = 15V • Switching-loss rating includes all "tail" losses • Optimized for high operating frequency over 5kHz,

Contextual Info: PD- 91751 International IÖR Rectifier IRG4IBC30FD INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Fast CoPack IGBT Features • • • • V ery Low 1.59V vota ge drop 2.5kV, 60s insulation voltage 4.8 mm creapage distance to heatsink

Transistor BC 227

Contextual Info: PD-9.1620 International I R Rectifier IRG4 BC 2 0 K-S prelim inary Short Circuit Rated UltraFast IGBT INSULATED GATE BIPOLAR TRANSISTOR Features • High short circuit rating optimized for motor control, tsc =1 Ops, @360V VCE start , T j = 125°C, V ge = 15V

IRGPH50M

Contextual Info: Previous Datasheet Index Next Data Sheet PD - 9.1030 IRGPH50M Short Circuit Rated Fast IGBT INSULATED GATE BIPOLAR TRANSISTOR Features C • Short circuit rated - 10µs @ 125°C, V GE = 15V • Switching-loss rating includes all "tail" losses • Optimized for medium operating frequency 1 to

IC C399

Abstract: IRGPC50MD2 c406 600V 25A Ultrafast Diode NS100
Contextual Info: Previous Datasheet Index Next Data Sheet PD - 9.1145A IRGPC50MD2 INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Short Circuit Rated Fast CoPack IGBT Features C VCES = 600V • Short circuit rated -10µs @125°C, V GE = 15V • Switching-loss rating includes all "tail" losses

LA 7693

Abstract: ic CD 4047 7737 transistor
Contextual Info: DATA SHEET NEC SILICON TRANSISTOR 2SC5014 HIGH FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR 4 PINS SUPER MINI MOLD FEATURES • S m a ll P acka ge • H igh G ain B a n d w id th P ro d u c t fr = 12 G H z T Y P . • Lo w N oise, H igh G ain

IRGPH50M

Abstract: C-471
Contextual Info: PD - 9.1030 IRGPH50M Short Circuit Rated Fast IGBT INSULATED GATE BIPOLAR TRANSISTOR Features C • Short circuit rated - 10µs @ 125°C, V GE = 15V • Switching-loss rating includes all "tail" losses • Optimized for medium operating frequency 1 to 10kHz See Fig. 1 for Current vs. Frequency

Contextual Info: P D - 9.1030 International ioRRectîfier IRGPH50M INSULATED GATE BIPOLAR TRANSISTOR Short Circuit Rated Fast IGBT Features • Short circuit rated - 10|js @ 125°C, V ge = 15V V CES = 1 200V • Switching-loss rating includes all "tail" losses • Optimized for medium operating frequency 1 to

IRGPH50M

Abstract: transistor BR 471 A
Contextual Info: PD - 9.1030 IRGPH50M Short Circuit Rated Fast IGBT INSULATED GATE BIPOLAR TRANSISTOR Features C • Short circuit rated - 10µs @ 125°C, V GE = 15V • Switching-loss rating includes all "tail" losses • Optimized for medium operating frequency 1 to 10kHz See Fig. 1 for Current vs. Frequency

MRF9331

Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF Line NPN Silicon High-Frequency Transistor ‘ European Part Number . d e sign e d prim arily for u se in low p ow er am plifiers to 1 GHz. Ideal for p a ge rs and other battery operated sy ste m s w here low pow er c o n su m p tio n is critical.

transistor Bc 230

Abstract: BC393
Contextual Info: BC 393 SILICON PLANAR PNP HIGH V O L T A G E A M P L IF IE R The B C 3 9 3 is a silicon planar epitaxial P N P transistor in Jedec T O - 1 8 metal case, designed for general p urpose h igh-volta ge and vide o am plifier applications. T h e com p lem entary N P N type is the B C 394.

ScansUX56

Contextual Info: BC 394 SILICON PLANAR NPN HIGH V O L T A G E A M P L IF IE R The B C 3 9 4 is a silicon planar epitaxial N P N transistor in Jedec: T O - 1 8 metal case, designed for general purp ose high-volta ge and vide o am plifier applications. T h e com p lem entary P N P type is the B C 393.

2N2907

Abstract: 935J
Contextual Info: A L LE GR O M I C R O S Y S T E M S INC T3» D • 0 S Ü 4 33 Ô 0 0 0 3 73 1 7 ■ AL6R i PROCESS TQL Process TQL PNP Small-Signal Transistor Process T Q L is a double-diffused P N P silicon epi­ taxial planar device for low-noise, high-gain ampli­ fication, m edium -power sw itching, and ge n e ralpurpose use from dc to UHF. Process T Q L is the

Contextual Info: European PowerSemiconductor and Electronics Company Marketing Information FD 400 R 16 KF4 55,2 11,85 M8 screwing depth max. 8 130 31,5 114 E1 C2 C1 E2 E2 E1 C1 G1 M4 28 screwing depth max. 8 7 2,5 deep 40 53 C2 16 18 G2 44 2,5 deep 57 E1 C2 K C1 E2 (A) E1

70nh

Abstract: rg4 16 diode RG4 DIODE CE900
Contextual Info: European PowerSemiconductor and Electronics Company Marketing Information FD 400 R 16 KF4 55,2 11,85 M8 screwing depth max. 8 130 31,5 114 E1 C2 C1 E2 E2 E1 C1 G1 M4 28 screwing depth max. 8 7 2,5 deep 40 53 C2 16 18 G2 44 2,5 deep 57 E1 C2 K C1 E2 (A) E1

Contextual Info: European PowerSemiconductor and Electronics Company Marketing Information FD 400 R 16 KF4 55,2 11,85 M8 screwing depth max. 8 130 31,5 114 E1 C2 C1 E2 E2 E1 C1 G1 M4 28 screwing depth max. 8 7 2,5 deep 40 53 C2 16 18 G2 44 2,5 deep 57 E1 C2 K C1 E2 (A) E1

Contextual Info: European PowerSemiconductor and Electronics Company Marketing Information FD 400 R 16 KF4 55,2 11,85 M8 screwing depth max. 8 130 31,5 114 E1 C2 C1 E2 E2 E1 C1 G1 M4 28 screwing depth max. 8 7 2,5 deep 40 53 C2 16 18 G2 44 2,5 deep 57 E1 C2 K C1 E2 (A) E1

IGBT FF 300 r12

Abstract: FF400R12KF4 FF400R12KF
Contextual Info: European PowerSemiconductor and Electronics Company GmbH + Co. KG Marketing Information FF 400 R 12 KF 4 55,2 11,85 M8 screwing depth max. 8 130 31,5 114 E1 C2 C1 E2 E2 E1 C1 G1 M4 28 screwing depth max. 8 7 2,5 deep 40 53 E1 C2 16 18 G2 44 2,5 deep 57 C2

G1 TRANSISTOR

Abstract: FF 150 R 1200 kf igbt FF600R12KF4 Transistor g1 IGBT 600V 600A JE 800 transistor
Contextual Info: European PowerSemiconductor and Electronics Company GmbH + Co. KG Marketing Information FF 600 R 12 KF 4 55,2 11,85 M8 screwing depth max. 8 130 31,5 114 E1 C2 C1 E2 E2 E1 C1 G1 M4 28 screwing depth max. 8 7 2,5 deep 40 53 E1 C2 16 18 G2 44 2,5 deep 57 C2